• Current Photovoltaic Research
• /
• v.10 no.4
• /
• pp.107-110
• /
• 2022

Lightweight and flexible photovoltaic (PV) modules are attractive for building-integrated photovoltaic (BIPV) applications because of their easy construction and applicability. In this study, we fabricated lightweight and flexible c-Si PV modules using ethylene tetrafluoroethylene (ETFE) front cover and shingled design string cells. The ETFE front cover instead of glass made the PV modules lighter in weight, and the shingled design string cells increased the flexibility. Finally, we fabricated a PV module with a conversion power of 240.08 W at an area of 1.25 m² and weighed only 2 kg/m². Moreover, to check the PV module's flexibility, we conducted a bending test. The difference of conversion power between the modules before and after bending shown was only 1.7 W, which showed a power reduction rate of about 0.7%.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
• /
• 2005.11a
• /
• pp.39-44
• /
• 2005

A broadband DC to 40 GHz 5-bit MMIC digital attenuator has been developed. The ultra broadband attenuator has been achieved by newly inserted the transmission lines in conventional Switched-T attenuator and the optimization of the transmission line parameters. Momentum was employed in design for an accurate performance prediction at high frequencies and Monte Carlo analysis was applied to verify performance stability against the MMIC process variation. The attenuator has been fabricated with 0.15 $\mu$m GaAs pHEMT process. This attenuator has 1 dB resolution and 23 dB dynamic range. High attenuation accuracy has been achieved over all attenuation range and full 40 GHz bandwidth with the reference state insertion loss of less than 6 dB at 20 GHz. The input and output return losses of the attenuator are better than 14 dB over all attenuation states and frequencies.

• Proceedings of the KSME Conference
• /
• 2007.05a
• /
• pp.421-425
• /
• 2007

In the fabrication of dry adhesive structure, increasing contact-points or contact-area is the primary goal because the adhesive force grows in proportion to the contact-area. The simplest way to extend the contact surface is the fabrication by using soft materials. However, the column-array structure could confront the matting phenomenon which columns are stuck together. Therefore, we need a novel design to reduce the effective stiffness with adequate stiff materials like a gecko's setae. In this study, we propose a novel design for the dry adhesive structure. Moreover, we analyzed whether the adhesive structure conforms the rough surface sufficiently through finite element method adopted the non-bonding interaction as the body force. Also, we fabricated the novel structures via UV lithography and some techniques. In addition, we examined the adhesive force of the novel structures.

• Current Photovoltaic Research
• /
• v.10 no.1
• /
• pp.1-5
• /
• 2022

Bifacial photovoltaic (PV) technology has received considerable attention in recent years due to the potential to achieve a higher annual energy yield compared to its monofacial PV systems. In this study, we fabricated the bifacial c-Si PV module with a shingled design using the conventional patterned bifacial solar cells. The shingled design PV module has recently attracted attention as a high-power module. Compared to the conventional module, it can have a much more active area due to the busbar-free structure. We employed the transparent backsheet for a light reception at the rear side of the PV module. Finally, we achieved a conversion power of 453.9 W for a 1300 mm × 2000 mm area. Moreover, we perform reliability tests to verify the durability of our Shingled Design Bifacial c-Si Photovoltaic module.

• The Journal of Korean Academy of Prosthodontics
• /
• v.44 no.2
• /
• pp.174-184
• /
• 2006

Purpose: Current trend in implant dentistry is changing from external connection to internal connection. To evaluate the splinting of external and internal connection implant on screw loosening, 2-units prosthesis was fabricated with BioPlant $System^(R)$ of external connection type and Lifecore STAGE-1 Single Stage Implant $System^(R)$ of internal connection type. Material and Method: Experimental group is classified into three groups. 1) $G_1-EE$: 2-units prosthesis was fabricated with two Bioplant $System^(R)$ of external connection type. 2) $G_1-EI$: 2-units prosthesis was fabricated with one BioPlant $System^(R)$ of external connection type and one Lifecore STAGE-1 Single Stage Implant $System^(R)$ of internal connection type. 3) $G_1-II$: 2-units prosthesis was fabricated with two Lifecore STAGE-1 Single Stage Implant $System^(R)$ of internal connection type. In fabricating 2-units prosthesis, two hexed abutments are recommended when two implants are installed parallel, otherwise one hexed abutment is used on major occlusal force area and one nonhexed abutment is used on the other area. Since it is rare to find two implants being parallel, it is hard to fabricate prosthesis with passive adaptation using two hexed abutments. It is much more difficult to acquire passive adaptation when using hex abutment compared to nonhex abutment. To evaluate the influence of hexed and nonhexed abutment on screw loosening, 2-units prosthesis was fabricated with hexed and nonhexed abutment. Experimental group is classified into three groups. 1) $G_2-HH$: 2-units prosthesis was fabricated with two hexed abutments. 2) $G_2-HN$: 2-units prosthesis was fabricated with one hexed abutment and one nonhexed abutment. 3) $G_2-NN$: 2-units prosthesis was fabricated with two nonhexed abutments. Result: The results of comparing the detorque value after loading on a each prosthesis periodically are as follows. 1. In splinting group of external and internal connection implant, $G_1-II$ group demonstrated the biggest detorque value, followed by $G_1-EI$ group and $G_1-EE$ group. 2. There is no notable significance between external connection implant of $G_1-EI$ group and $G_1-EE$ group and also no significance between internal connection implant of $G_1-EI$ group and $G_1-II$ group. 3. $G_2-HH$ group showed higher detorque value than $G_2-HN\;and\;G_2-NN$ group. From the results, we can concluded that using both external connection and internal connection implant together is clinically acceptable and in order to acquire a good passive adaptation in fabricating 2-units implant prosthesis we can use two nonhexed abutments.

• Journal of Information Display
• /
• v.13 no.1
• /
• pp.17-20
• /
• 2012

The current panels for liquid crystal display (LCD) TV sets are all characterized by pins placed on two sides. To manufacture one type of panel, a dedicated mask is needed, and the production line should be started once. Moreover, the whole panel needs to be removed if a dead pixel is found. If the panel, however, will first be fabricated with pins placed on four sides and then divided by a cross-cut into four equal-sized panels with pins placed on two sides, one set of masks can be used to manufacture two types of LCD panels, which was referred to by the authors as dual mode. In this paper, the concept of the dual mode and its differences from the conventional way of producing panels are introduced. Its advantages in boosting production efficiency, improving the product's good rate, and lowering the production cost are also described based on case studies. Of particular importance is the fact that the dual mode is very suitable for the trial production of very-large-area LCD TV sets.

• Journal of the Korean Society for Precision Engineering
• /
• v.23 no.9 s.186
• /
• pp.179-189
• /
• 2006

Recently the electrostatic 2-axis MEMS stages have been fabricated f3r the purpose of an application to PSD (Probe-based Storage Device). However, all of the components (platform, comb electrodes, springs, anchors, etc.) in those stages are placed in-plane so that they have low areal efficiencies such as a few percentage, which is undesirable as data storage devices. In this paper, we present a novel structure of an electrostatic 2-axis MEMS stage that is characterized by having a large areal efficiency of about 25%. For obtaining large area efficiency, the actuator part consisting of mainly comb electrodes and springs is placed right below the platform. The structure and operational principle of the MEMS stage are described, followed by a design and analysis, the fabrication and measurement results. Experimental results show that the driving ranges of the fabricated stage along the x and y axis were 27$\mu$m, 38$\mu$m at the supplied voltages of 65V, 70V, respectively and the natural frequencies along x and y axis were 180Hz, 310Hz, respectively. The total size of the stage is about 5.9$\times$6.8mm$^2$ and the platform size is about 2.7$\times$3.6mm$^2$.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.32A no.2
• /
• pp.57-65
• /
• 1995

The effects of device geometry and layout on high speed performance such as current gain outoff frequency(f$_{T}$) and maximum oscillation frequency(f$_{max}$) are of very improtant for the scaling-down of geterojunction bipolar transistors(HBT$_{s}$). In this paper AlGaAs/GaAs HBTs are fabricated by MBE epitaxial growth and conventional mesa process, and the experimental data of emitter-base geometru dependency of HBT performance are presented in order to provide the quantitative information for optimum device structure design. It is shown that f$_{T}$ and f$_{max}$ are inversely proportional to the emiter stripe width, while the low emitter perimeter/area ratio is better to f$_{T}$ and worse ot f$_{max}$. It is also demonstrated the f$_{T}$ and f$_{max}$ are highly improved by the emitter-base spacing reduction resulting in less parsitic effects. As the result f$_{T}$ of 42GHz and f$_{max}$ of 23GHz are obtained for fabricated HBT with emitter area of 3${\times}20^{\mu}m^{2}$ and E-B spacing of 0.2$\mu$m.m.m.

• Proceedings of the IEEK Conference
• /
• 2000.06b
• /
• pp.270-273
• /
• 2000

We have fabricated and analyzed photodiodes for optical link with Si pin structures. As the results of experiment, the web patterned photodiode(type C) with $p^{+}$-guard ring showed low junction capacitance of 6~7 pF at $V_{R}$=-5V and high separation ability for optical signal(dark current : $\leq$ 5 nA, optical signal current : $\geq$ 340 nA) due to the small effective $p^{+}$-n junction area and the expanded electric field region. The fabricated Si pin photodiode can be applicable for detecting an optical signal with the wavelength of about 660~670 nm. It can also be integrated with the twin well CMOS structure to develope an one chip based optical receiver IC. IC.C.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2008.11a
• /
• pp.343-344
• /
• 2008

A surface micromachined uncooled microbolometer based on the amorphous silicon was designed, fabricated, and characterized. We designed the microbolometer with a pixel size of $44\times44{\mu}m^2$ and a fill factor of about 50 % ~ 70% by considering such important factors as the thermal conductance, thermal time constant, the temperature coefficient of resistance, and device resistance. Also, we successfully fabricated the microbolometer by using surface MEMS technology. Finally, we investigated responsivity and detectivity properties depends on the active area size.