• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.7
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• pp.793-796
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• 2004

In order to improve c-axis crystalline orientation and high perpendicular coercivity of deposited ${Co}_77{Cr}_20{Ta}_3$perpendicualr recording layer, Two step method was investigated using a Facing Targets Sputtering System(FTS). The ${\Delta\theta}_50$ of ${Co}_77{Cr}_20{Ta}_3$recording layer deposited on seedlayer prepared at Room Temperature was as low as $5^\circ$, while that of the recording layer without seedlayer was about 11$^{\circ}$. The Two-Step method using ${Co}_77{Cr}_20{Ta}_3$seedlayer prepared at Room Temperature was shown to be very effective in controling the c-axis orientation of ${Co}_77{Cr}_20{Ta}_3$ recording layer with thin thickness.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.309-312
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• 1997

The Ce-Cr(-Ta) film are one of the most suitable candidates for perpendicular magnetic media. the control of the preparation conditions, such as Ar gas pressure P$\_$Ar/ substrates temperature T$\_$s/, films thickness $\delta$, deposition speed R$\_$d/, is considered to be important to attain ultra high density recording far perpendicular magnetic recording media. In this study, the Co-Cr thin films and Co-Cr-Ta thin films were deposited on the glass side substrates by using Facing Targets Sputtering apparatus(FTS). Crystallographic characteristics and magnetic characteristics were evaluated by X-ray diffractometry(XRD), Vibrating Sample Magnetometer(VSM) respectively.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1367-1368
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• 2007

We prepared Zinc Oxide thin films introducing Ag layer on glass substrates at room temperature by using facing targets sputtering (FTS) method. In order to obtain good electrical properties, Ag layer was introduced. Ag with various thickness of thin films were used as intermediate layers. The electrical, optical and crystallographic properties of thin films were investigated by Four-Point probe, UV/VIS spectrometer and XRD. From the results, we could confirm that the thickness of Ag layer changes the electrical and optical performances of the multilayers.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.217-217
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• 2010

새로운 물질의 투명전극 제작을 위해 대향타겟식 스퍼터링 (Facing Targets Sputtering, FTS)법을 이용하여 유리 기판위에 AZO와 GZO 이종타겟을 사용하여 유리 기판 위에 GAZO 박막을 제작하였다. FTS는 두 타겟이 서로 마주보는 구조로 인해 서로 다른 종류의 타겟을 장착하여 새로운 물질의 박막을 제작하는데 있어 용이하고, 타겟 뒷면에 위치한 영구자석으로 인해 타겟으로부터 방출되는 2차 전자 등을 구속하여 고밀도 플라즈마를 형성함으로서 고품위 박막의 제작이 가능하다. 본 연구에서는 투입 전력에 따라 제작된 GAZO 박막의 전기적, 광학적 및 구조적 특성 변화를 살펴보았다. 특성 평가는 UV/VIS spectrometer, Hall measurement, X-ray diffractometer (XRD), Atomic Force Microscope (AFM), Field Emission Scanning Electron Microscopy (FESEM) 을 이용하여 분석하였다. 그 결과 제작된 GAZO 박막은 비저항 $4.3\;{\times}\;10^{-4}\l;{\Omega}-cm$, 가시광 영역에서 투과율 80% 이상을 나타내는 것으로 분석되었다.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1474-1476
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• 2005

ZnO:Al(AZO) has been investigated for the photovoltaic cell or TCO(Transparent Conductive Oxide) of the display, because it has good electrical and optical properties. In this study, the ZnO:Al(AZO) thin film prepared on variation of substrate temperature by FTS(Facing Targets Sputtering) system. In case of TCO, because resistivity and roughness values affect the lighting of the OLED, their factors are very important. Therefore, in this paper, the electrical and optical properties of the AZO thin film were investigated with the deposition conditions and its roughness was investigated on variation of the substrate temperature. In results, AZO thin film deposited with the transmittance over 80% and the resistivity was reduced from $1.36{\times}10^{-3}$ [O-cm] to $4{\times}10^{-4}$ [O-cm] with increasing the substrate temperature from R.T to $200[^{\circ}C]$. Especially, we could obtain the resistivity $4{\times}10^{-4}$ [O-cm] of AZO thin film prepared at working pressure 1[mTorr], input current 0.4[A] and substrate temperature $200[^{\circ}C]$.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.847-850
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• 1996

The bi-layered films composed of Co-Cr-Ta layers and paramagnetic $Co_{67}Cr_{33}$ underlayer were deposited by suing Facing Targets Sputtering(FTS). The effects of $Co_{67}Cr_{33}$ underlayer on the crystallographic and magnetic characteristics of the Co-Cr-Ta layer deposited on the underlayer was investigated. The diffraction intensity $I_{p(002)}$ of Co-Cr-Ta layers on the $Co_{67}Cr_{33}$ layer was stronger than that of single layer and Co-Cr-Ta/Ti double layer. Therefore, the crystallinity of Co-Cr-Ta layer was imporved by the $Co_{67}Cr_{33}$ underlayer rather than Ti ones. However, te coercivity H$_{c\bot}$ of Co-Cr-Ta layers deposited on $Co_{67}Cr_{33}$ underlayer was as low as 250 Oe even at substrate temperature of $220^{\circ}C$. This H$_{c\bot}$ decrease seems to be attributed to the effect of the $Co_{67}Cr_{33}$ underlayer as well as interval time between deposition of the underlayer and the Co-Cr-Ta layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.2
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• pp.114-120
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• 2012

In this research, we prepared Ga doped zinc oxide(ZnO:Ga, GZO) targets each difference sintering temperature $700^{\circ}C$, $800^{\circ}C$, and doping rate 1 wt.%, 2 wt.%, 3 wt.%. The characteristics of thin film on glass substrates which deposited by facing target sputtering in pure Ar atmosphere are reported. Ga doped zinc oxide film is attracted material through low resistivity, high transmittance, etc. When prepared target powder's structure was investigated by scanning electron microscope, densification and coarsening by driving force was observed. For each ZnO:Ga films with a $Ga_2O_3$ content of 3 wt.% at input power of 45W, the lowest resistivity of $9.967{\times}10^{-4}{\Omega}{\cdot}cm$ ($700^{\circ}C$) and $9.846{\times}10^{-4}{\Omega}{\cdot}cm$ ($800^{\circ}C$) was obtained. the carrier concentration and mobility were $4.09{\times}10^{20}cm^{-3}$($700^{\circ}C$), $4.12{\times}10^{20}cm^{-3}$($800^{\circ}C$) and $15.31cm^2/V{\cdot}s(700^{\circ}C)$, $12.51cm^2/V{\cdot}s(800^{\circ}C)$, respectively. And except 1 wt.% Ga doped ZnO thin film, average transmittance of these samples in the range 350-800 nm was over 80%.