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Comparison of Slotted and Slotless Ring-wound PM Brushless Machines for Electro-Mechanical Battery (EMB용 전동발전기 선정을 위한 슬롯형과 슬롯리스 Ring-wound형 영구자석 브러시리스 기기의 특성 비교)

  • Jang, Seok-Myeong;Jeong, Sang-Sub;Ryu, Dong-Wan;Choi, Sang-Kyu
    • The Transactions of the Korean Institute of Electrical Engineers B
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    • v.50 no.3
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    • pp.107-114
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    • 2001
  • Electro-mechanical battery (EMB) consists of a high-speed fly wheel with an integral motor/ generator suspended on magnetic bearings and in an evacuated housing. Permanent magnet (PM) machines as the EMB motor/ generator are a popular choice, since there are no excitation losses which means substantial increase in the efficiency. In this paper we present the comparison of conventional slotted and slotless ring-wound types, aimed at EMB and other high-speed drives. We firstly discuss the topology of each machine for this particular application. these machines are primarily designed as 1kW two-pole PM generator with the rated speed of 40000 rpm. the motoring torque of 0.51 Nm has to be enough to accelerate the flywheel to the rated speed. We then present the comparison of the open-circuit field, the armature reaction field and winding inductance. next we analyze the induced voltage and the developed torque per unit stack length and unit weight of different machines. Finally, we estimate and compare the losses and the efficiency at motoring and generating modes.

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Eletrostatic Discharge Effects on AlGaN/GaN High Electron Mobility Transistor on Sapphire Substrate (사파이어 기판을 사용한 AlGaN/GaN 고 전자이동도 트랜지스터의 정전기 방전 효과)

  • Ha Min-Woo;Lee Seung-Chul;Han Min-Koo;Choi Young-Hwan
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.54 no.3
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    • pp.109-113
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    • 2005
  • It has been reported that the failure phenomenon and variation of electrical characteristic due to the effect of electrostatic discharge(ESD) in silicon devices. But we had fess reports about the phenomenon due to the ESD in the compound semiconductors. So there are a lot of difficulty to the phenomenon analysis and to select the protection method of main circuits or the devices. It has not been reported that the relation between the ESD stress and GaN devices, which is remarkable to apply the operation in high temperature and high voltage due to the superior material characteristic. We studied that the characteristic variation of the AlGaN/GaN HEMT current, the leakage current, the transconductance(gm) and the failure phenomenon of device due to the ESD stress. We have applied the ESD stress by transmission line pulse(TLP) method, which is widely used in ESD stress experiments, and observed the variation of the electrical characteristic before and after applying the ESD stress. The on-current trended to increase after applying the ESD stress. The leakage current and transconductance were changed slightly. The failure point of device was mainly located in middle and edge sides of the gate, was considered the increase of temperature due to a leakage current. The GaN devices have poor thermal characteristic due to usage of the sapphire substrate, so it have been shown to easily fail at low voltage compared to the conventional GaAs devices.

PWM Inverter System Control for Flywheel Energy Storage System using PDFF(Pseudo-Derivative Control with Feedforward Gain) Algorithm (PDFF 기법을 적용한 플라이휠 에너지 저장장치용 PWM 인버터 시스템 제어)

  • Park, Jong-Chan;Jeong, Byung-Hwan;Choi, Hee-Ryong;Choe, Gyu-Ha
    • The Transactions of the Korean Institute of Power Electronics
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    • v.12 no.3
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    • pp.267-275
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    • 2007
  • This paper presents about energy input and output modeling for a flywheel energy storage system that can store and supply mechanical energy, which is emerging as one of clean energy sources, and the analysis and control of a PWM inverter system. Moreover, this paper describes flywheel's characteristics related to variations of mechanical and electrical parameters like as voltage and current versus speed characteristics formed as numerical formula and thus simulate behaviour-status of flywheel energy. Also for comparison and analysis between PI control and PDFF control, the modeling, design and analysis to the single-phase full bridge inverter with double loop feedback control is accomplished through numerical description and simulation. Finally, under load condition 0.1[pu], 1[pu]. it is validated that harmonic characteristics for voltage and current wave is controlled within 5% below even dynamics condition.