• 제목/요약/키워드: FEDs

검색결과 44건 처리시간 0.038초

Preparation and Optical Properties of $SrGa_2S_4$:Eu Phosphor

  • 도영낙;배재우;김유혁;양홍근
    • Bulletin of the Korean Chemical Society
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    • 제21권3호
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    • pp.295-299
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    • 2000
  • The photoluminescence and cathodoluminescence of $SrGa_2S_4:EU$ phosphor were optimized with the process and chemical variables (activators, fluxes and reaction temperature) used in solid state reaction. Firing the powder with flux at $800^{\circ}C$ for 2hr gave the highest photoluminescence efficiency under near-UV excitation and the highest cathodoluminescence efficiency of 20.1 lm/W at 2 kV and 33.3 lm/W at 10 kV. The suitability of $SrGa_2S_4:EU$ for application as a phosphor in LCDs and FEDs is discussed.

Carbon-Nanotube Based Field-Emission Displays for Large Area and Color Applications

  • Choi, Won-Bong;Lee, Nae-Sung;Yi, Whi-Kun;Jin, Yong-Wan;Choi, Yong-Soo;Han, In-Taek;Jang, Hyeong-Yong;Kim, Hoonn-Young;Kang, Jung-Ho;Yun, Min-Jae;Park, Sang-Hyeun;Yu, Se-Gi;Jang, Jae-Eun;You, Jang-Hun;Kim, Jong-Min
    • Journal of Information Display
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    • 제1권1호
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    • pp.59-62
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    • 2000
  • The first 9-inch carbon nanotube based color field emission displays (FEDs) are integrated using a paste squeeze technique. The panel is composed of 576 x 242 lines with implementation of low voltage phosphors. The uniform and moving images are achieved only at $2V/{\mu}m$, This demonstrates a turning point of nanotube for large area and full color applications.

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액상에서 성장한 ZnO 나노와이어의 전계방출 특성연구 (Field emission characteristics of ZnO nanowires grown at liquid phase)

  • 노임준;김성현;조진우;박구범;김용혁;이덕출;신백균
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2009년도 제40회 하계학술대회
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    • pp.1347_1348
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    • 2009
  • We fabricated FEDs based on ZnO nanowires. ZnO nanowires were synthesized on Au thin films by hydrothermal method on hot plate. After 2 hours, we obtained nanowires of chin form. The high-purity nanowires showed sharp tips geometry with a wurtzite structure. The field emission properties of the ZnO nanowires were investigated in high vacuum chamber. The turn-on field for the ZnO nanowires was found to be about 4.1 V/${\mu}m$ at a current density of $0.1{\mu}A/cm^2$.

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Carbon Nanotube FEDs for Low Power Character Displays

  • Uemura, Sashiro;Yotani, Junko;Nagasako, Takeshi;Kurachi, Hiroyuki;Nakao, Takehiro;Ito, Masaaki;Sakurai, Akira;Shimoda, Hideo;Ezaki, Tomotaka;Fukuda, Kazuhiko;Saito, Yahachi
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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    • pp.1525-1528
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    • 2008
  • High-luminance CNT-FED character-displays using simple line-rib-structure was performed. One display-panel had $48{\times}480$-dots and the sub-pixel pitch was 1mm. Another panel had $32{\times}256$-color-pixels, and the subpixel size was $0.6mm{\times}1.8mm$. The power consumption was less than 10W at character-displaying module. It should be useful for public display even under emergent no-power condition.

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Recent improvements in display image qualities of CNT FEDs

  • Chi, Eung-Joon;Chang, Cheol-Hyeon;Lee, Chun-Gyoo;Choe, Deok-Hyeon
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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    • pp.137-140
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    • 2006
  • The prototype of the field emission display with carbon nanotube emitter is developed in this study. To improve the brightness and color gamut of the prototype, new phosphor material, $SrGa_2S_4:Eu$, is adopted instead of conventional CRT-green phosphor. By replacing the green phosphor, the prototype shows significant improvements in the brightness and color gamut. At the anode voltage of 7 kV and the anode current of $2{\sim}3\;{\mu}A/cm^2$ the brightness is higher than $600\;cd/m^2$. The luminous efficiency of the prototype is about 7.7 lm/Watt.

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CNT FEDs with Electron Focusing Structure for HDTV Application

  • Chi, Eung-Joon;Choi, Jong-Sick;Chang, CheolHyeon;Park, Jong-Hwan;Lee, Chul-Ho;Choe, Deok-Hyeon;Lee, Chun-Gyoo
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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    • pp.1008-1011
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    • 2005
  • In this study, the field emission display with carbon nanotube emitter is developed for the large size HDTV application. Two structures for electron beam focusing are developed on the typical top-gate cathode. The metal grid and focusing gate structure are proved to be effective for the focusing. The data switching voltage for the double gate structure is lower than 30V which is competitive value in respect of the cost for driver electronics. The brightness and color gamut are comparable to those of the commercial product such as CRT.

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Cathodoluminescent properties of rare-earthe-doped $SrGa_2S_4$ thin film phosphors excited with low energy electrons

  • Nakanishi, Yoichiro
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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    • pp.1015-1019
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    • 2002
  • The deposition of $SrGa_2S_4$ thin film phosphors doped with Ce or Eu aiming at application for FEDs has been carried out by a multi-source deposition technique. A $SrGa_2S_4$ phase was formed by annealing process and $SrGa_2S_4$ thin films which were deposited using a $Ga_2S_3/Sr$ flux ratio larger than 50 and annealed in $H_2$S showed luminance and luminous efficiency of about 1700 cd/$m^2$ and 2.95 lm/W, respectively, with (0.13, 0.10) chromaticity in the activation with Ce, and about 4000 cd/$m^2$ and 7.05 lm/W, respectively, with (0.36, 0.60) under excitation with 3 kV and 60A/$cm^2$. The results obtained this experiment demonstrate the potential of $SrGa_2S_4$ thin film phosphors for FED screens.

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측면 전계 방출 소자를 위한 화학적-기계적 연마를 이용한 새로운 미소 간격 제작 기술 (A Novel Sub-Micron Gap Fabrication Technology using Chemical-Mechanical Polishing (CMP) for Lateral Field Emission Device (FED))

  • 이춘섭;한철희
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제50권9호
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    • pp.466-470
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    • 2001
  • We have developed a sub-micron gap fabrication technology using chemical-mechanical polishing (CMP) without /the sub-micron lithography equipments (0.18∼0.25 7m). And it has been applied to a lateral field emission device (FED), in which narrow gap distance is very important for reducing turn-on voltage. As a result, the turn-on voltage (at which the current level is 1 nA) of the fabricated device with the gap distance of 256 nm is as low as 4.0 V, which is the lowest turn-on voltage among lateral FEDs ever reported.

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Effect of Liquid Surface Treatments on Field Emission Properties of Carbon Nanotube Cathodes

  • Lee, Ji-Eon;An, Young-Je;Shin, Heon-Cheol;Chung, Won-Sub;Cho, Young-Rae
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
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    • pp.486-489
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    • 2007
  • Carbon nanotube (CNT) cathodes having a trench structure similar to the structure of the gated triodetype cathode were successfully fabricated by a screenprinting method with multi-walled carbon nanotubes. We observed that a liquid method not only readily removes the organic residues on the CNT films, but also satisfactorily protrudes the CNTs out of the electrode surface. The CNT cathodes prepared by the liquid method showed a turned-on field of $1.4\;V/{\mu}m$. The emission current density of them was about $3.1\;mA/cm^2$ at the electric field of $3\; V/{\mu}m$. The liquid method appears to be a promising surface treatment of CNT cathode for gated triode-type FEDs applications.

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탄소나노튜브 전극으로부터 전자방출에 의한 진공도 측정 (Measurement of Vacuum Pressure by Electron Emission from Carbon Nanotube Emitters)

  • 김성진;조규환;김성엽;전재옥;이상훈;최복길
    • 한국전기전자재료학회논문지
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    • 제18권5호
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    • pp.396-400
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    • 2005
  • Carbon nanotubes (CNTs) have been well known as electron emitters for field emission applications like FEDs. In this work, we propose as new application a vacuum sensor using CNTs and discuss its current-voltage characteristics as a function of vacuum pressure. The proposed sensor, based on electrical discharge theories in air gap well-known as Townsend theory and as Paschen's law, works by figuring out the variation of the dark current and the initial breakdown voltage depending on the vacuum pressure of air which can ionize through collisions with the electrons accelerated by high electric field.