• 제목/요약/키워드: FED(field emission display)

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스크린 프린팅 방법에 의해 게이트-에미터간 자체정렬된 3극 구조의 CNT FEA 제조 (Fabrication of CNT FEA Self-aligned between Gate and Emitter using Screen Printing Method)

  • 권상직
    • 한국전기전자재료학회논문지
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    • 제19권4호
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    • pp.367-372
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    • 2006
  • A carbon nanotube field emission display(CNT FED) panel with a 2 inch diagonal size was fabricated using a screen printing of a prepared photo-sensitive CNT paste and vacuum in-line sealing technology. After a surface treatment of the patterned CNT, only the carbon nanotube tips are uniformly exposed on the surface. The diameter of the exposed CNTs are usually about 20 nm. Using the photo-sensitive CNT paste, we have developed a triode type CNT FEA with a self-aligned gate-emitter structure. The turn on voltage was around 100 V which corresponds to according the turn on field of about $40V/{\mu}m$. By the creation of a self-aligned gate-emitter structure, it is expected that the screen printed photo-sensitive CNT paste is promising as a good candidate for the large size field emission display.

감광성 탄소나노튜브 페이스트의 조성과 열처리가 전계방출 특성에 미치는 영향 (Effect of Photosensitive Carbon Nanotube Paste on Field Emission Properties)

  • 오정섭;김대준;정진우;송윤호;조영래
    • 한국재료학회지
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    • 제16권9호
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    • pp.550-556
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    • 2006
  • Photosensitive carbon nanotube (CNT) pastes are explored to develop a CNT field emitter for field emission display (FED) application. We formulated a photosensitive paste including multi-walled CNTs (MWNTs) for screen printing. The photosensitive CNT paste was synthesized by mixing of MWNTs, inorganic fillers (nano metal), organic vehicle, monomers and photo initiator. The CNT paste films were patterned by using backside exposure technique. The CNTs were strongly fixed on a cathode by formation of carbon residue during firing process. For the CNT emitters, current-voltage(I-V) characteristics and images of field emission were evaluated. The emission properties of CNT emitters are dependent on the paste composition. A turn-on electric field for the CNT field emitters is measured to be 1 V/$\mu$m. Additionally, the effect of heat treatment parameter on field emission properties was discussed. The newly formulated photosensitive CNT paste can be potentially applicable to highly reliable CNT field emitters.

A gas display device with electron emitter

  • Son, Seung-Hyun;Nam, Mun-Ho;Kim, Jung-Min;Cho, Sung-Hee;Jang, Sang-Hun;Kim, Gi-Young;Han, In-Su;Kim, Dae-Hyun;Cho, Young-Mi;Kim, Chang-Wook;Park, Hyoung-Bin
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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    • pp.1253-1256
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    • 2007
  • A display device combining plasma display panel (PDP) and field emission display (FED) is proposed to achieve high luminous efficiency. The device can avoid the main energy loss channels of both PDP (ion loss) and FED (low CL efficiency). $2{\sim}6$”-diagonal test panels with carbon nano-tube (CNT) electron emitter and Xenon ambient gas showed the luminous efficiency of 4.14lm/W and brightness of $263cd/m^2$ at 35V (1kHz, 1% duty), indicating that it is a good candidate for the low voltage driven, highly efficient next generation display.

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낮은 수소 함유량을 갖는 유사 다이아몬드 박막의 몰리브덴 팁 전계 방출 소자 응용 (Application of Low-hydrogenated Diamond-like Carbon Film to Mo-tip Field Emitter Array)

  • 주병권;정재훈;김훈;이윤희;오명환
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제48권2호
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    • pp.76-79
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    • 1999
  • Low-hydrogenated DLC films were coated on the Mo-tip FEAs by 'layer-by-layer' process based on the plasma-enhanced CVD method. The hydrogen content in the DLC film deposited by the 'layer-by-layer' process was appeared to be remarkably lowered through SIMS analysis. Also, the low-hydrogenated DLC-coated Mo-tip FEA showed good potentiality for FED applications in terms of turn-on voltage, emission current, emission stability and light emitting uniformity.

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DLC-coated Si-tip FEA 제조에 있어서 Al 희생층을 이용한 게이트 누설 전류의 감소 (Decrease of Gate Leakage Current by Employing AI Sacrificial Layer in the DLC-coated Si-tip FEA Fabrication)

  • 주병권;이상조;김훈;이윤희;오명환
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제48권8호
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    • pp.577-579
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    • 1999
  • DLC film remaining on device surface could be removed by eliminating AI sacrificial layer as a final step of lift-off process in the fabrication of DLC-coated Si-tip FEA. The field emission properties(I-V curves, hysteresis, and current fluctuation etc.) of the processed device were analyzed and the process was employed to 1.76 inch-sized FEA panel fabrication in order to evaluate its FED applicability.

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p" Color Field Emission Displays Using Carbon Nanotube Emitters

  • Lee, N.S.;Park, W.B.;Kim, J.M.
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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    • pp.211-211
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    • 2000
  • Carbon nanotubes (CNTs) have been spotlighted as one of promising field emission displays(FEDs). For the first time, to authors knowledge, we have developed the 9" color CNT-FEDs with the resolution of 240x576 lines. The 9" CNT-FEDs with diode-type and triode-type structures are presented. The well-dispersed CNT paste was squeezed onto the metal-patterned cathode glass. For the anode plate, the Y2O2S:Eu, ZnS:Ag,Cl low-voltage phosphors were printed for red, green, and blue colors, respectively. The vacuum-packaged panel maintained the vacuum level of 1x10-7 Torr. The uniform moving images vacuum-packaged panel maintained the vacuum level of 1x10-7 Torr. The uniform moving images were demonstrated at 2 V/um. High brightness of 800, 200, and 150cd/m2 was observed on the green, red, and blue phosphors at V/um, respectively. Field emission characteristics of a triode-type CNT-FED were simulated using a finite element method. the resultant field strength on the cathode was modulated by gate bias and emitted electrons were focused on the anode. A relatively uniform emission image was experimentally achieved at the 800V anode. A relatively uniform emission image was experimentally achieved at the 800V anode and the 50-180 V gate biases. Energy distribution of electrons emitted from CNTs was measured using an energy analyzer. The maximum peak of energy curve corresponded to the Fermi energy level of CNTs. The whole fabrication processed of CNT-FEDs were fully scalable and reproducible. Our CNT-FEDs has demonstrated the high potential of large-area and full-color applications with very low cost fabrication and low power consumption.

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Application of Carbon Nanotubes in Displays

  • Feng, T.;Sun, Z.;Zhang, Z.J.;Lin, L.F.;Ding, Hui.;Chen, Y.W.;Pan, L.K.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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    • pp.1529-1531
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    • 2008
  • Since the discovery over a decade ago, carbon nanotubes (CNTs) have been attracting considerable attentions both from scientists and engineers. Because of the excellent field emission properties, such as high aspect ratio, extremely small diameter, and high emission current, CNTs become a potential candidate as field emitter for field emission display (FED) and lighting (FEL) as backlight for LCD. Due to the exceptional physical properties, such as superior thermal and electrical conductivities, as well as high stiffness and strength, the CNT-based composites can be as light-weight heat-sink or thermal spreader materials used for power electronic devices, such as power LED for general illumination. The CNTs for above applications will be reviewed, and related materials and devices will be demonstrated in this paper.

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탄소나노튜브 캐소드의 전계방출 특성에 미치는 재열처리의 영향 (Effect of Post-Heat Treatment on Field Emission Properties for Carbon Nanotube Cathodes)

  • 하상훈;권나현;송풍근;장지호;조영래
    • 대한금속재료학회지
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    • 제48권2호
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    • pp.180-186
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    • 2010
  • For the application of field emission display (FED), it is essential to develop a carbon nanotube (CNT) cathode with high emission current density. In this study, we developed and demonstrated a post-heat treatment (PHT) process to improve field emission properties of CNT cathodes. Since the PHT is intended to burn out organic materials covering the CNTs, the PHT was carried out by heating samples at a high temperature in an atmosphere. The PHT process is applied for samples processed by surface treatment with an adhesive tape. Compared to samples prior to the PHT, samples after the PHT at $360^{\circ}C$ showed about 17% improvement in emission current density. The major reason for the increased current density is mainly the increased aspect ratio of the CNTs because of the removal of the adhesive organic residues covering the CNTs, which were attached on the CNT surfaces during the surface treatment using the adhesive taping method.

Characterization of Lateral Type Field Emitters with Carbon-Based Surface Layer

  • Lee, Myoung-Bok;Lee, Jae-Hoon;Kwon, Ki-Rock;Lee, Hyung-Ju;Hahm, Sung-Ho;Lee, Jong-Hyun;Lee, Jung-Hee;Choi, Kyu-Man
    • Journal of Information Display
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    • 제2권3호
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    • pp.60-65
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    • 2001
  • Lateral type poly-silicon field emitters were fabricated by utilizing the LOCOS (Local Oxidation of Silicon) process. For the implementation 'of an ideal field emission device with quasi-zero tunneling barrier, a new and fundamental approach has used conducted by introducing an intelligent carbon-based thin layer on the cathode tip surface via a field-assisted self-aligning of carbon (FASAC) process. Fundamental lowering of the turn-on field for the electron emission was feasible through the control of both the tip shape and surface barrier height.

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ZnO 반도체 나노선의 패턴 성장 및 전계방출 특성 (Patterned Growth of ZnO Semiconducting Nanowires and its Field Emission Properties)

  • 이용구;박재환;최영진;박재관
    • 한국세라믹학회지
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    • 제47권6호
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    • pp.623-626
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    • 2010
  • We synthesized ZnO nanowires patterned on Si substrate and investigated the field emission properties of the nanowires. Firstly, Au catalyst layers were fabricated on Si substrate by photo-lithography and lift-off process. The diameter of Au pattern was $50\;{\mu}m$ and the pattern was arrayed as $4{\times}4$. ZnO nanowires were grown on the Au catalyst pattern by the aid of Au liquid phase. The orientation of the ZnO nanowires was vertical on the whole. Sufficient brightness was obtained when the electric field was $5.4\;V/{\mu}m$ and the emission current was $5\;mA/cm^2$. The threshold electric field was $5.4\;V/{\mu}m$ in the $4{\times}4$ array of ZnO nanowires, which is quite lower than that of the nanowires grown on the flat Si substrate. The lower threshold electric field of the patterned ZnO nanowires could be attributed to their vertical orientation of the ZnO nanowires.