• 대한전자공학회논문지SD
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• 제44권8호
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• pp.8-15
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• 2007

본 논문에서는 산화된 다공질 폴리실리콘을 이용하여 전계 방출 소자를 제작하여, 각각의 픽셀에 따른 전기적 특성과 형광체의 발광 특성을 조사하였다. 실제 대면적 디스플레이 소자에 적용하기 위해서 PM 방식을 이용해서 소자를 픽셀별로 동작하였고, 상부금속 전극의 어레이에 따른 두께와 폭의 공정조건을 확립하였다. 산화된 다공질 폴리실리콘의 미세 구조를 분석하고, 각각의 픽셀에 따른 전계방출 특성을 조사해 보았다. 상부금속 전극의 두께와 폭에 따른 전자방출 특성을 조사해 본 결과 Ti/pt(2nm/7nm)가 가장 적절한 두께라는 것을 확인 할 수 있었고, 2.5 mm 이상 폭에서 전자방출 효율이 증가하는 모습을 확인 할 수 있었다. 각 픽셀에 따른 소자의 전기적 특성은 픽셀마다 조금씩의 차이는 있지만 거의 동일한 누설 전류와 방출 전류가 나타남을 확인할 수 있었고, 동일한 크기의 효율도 관찰할 수 있었다. 누설 전류와 방출 전류는 시간이 증가함에 따라 감소하는 모습이 나타나긴 하였으나, 모든 픽셀이 거의 동일하게 감소하였다. 각각의 픽셀에 따른 휘도는 큰 차이가 없음을 확인할 수 있었고, 20 V에서 $700cd/m^2$ 이상의 높은 휘도를 나타내었으므로 실제 디스플레이 소자로도 응용이 가능할 것이다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.866-869
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• 2004

A carbon nanotube field emission display(CNT FED) panel with a 2 inch diagonal size was fabricated by using a screen printing of a prepared photo-sensitive CNT paste and vacuum in-line sealing technology. After a surface treatment of the patterned CNT, only the carbon nanotube tips are uniformly exposed on the surface. The diameter of the exposed CNTs are usually about 20nm. The sealing temperature of the panel was around 390 $^{\circ}C$ and the vacuum level was obtained with $1.4{\times}10^{-5}$torr at the sealing. The field emission properties of the diode type CNT FED panel were characterized Now, we are developing a triode type CNT FED with a self-aligned gate-emitter structure.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1997년도 제12회 학술발표회 논문개요집
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• pp.100-100
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• 1997

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.462-464
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• 2004

We studied the growth characteristics of carbon nanotubes which was grown from uniformly dispersed iron nanoparticles prepared from iron-acetate [Fe(II)$(CH_3COO)_2$]. The density of CNT was controlled from precursor concentrations. We also investigated the field emission properties of CNTs. We found that the optimization of CNT density is an important factor for field_emission properties.

• 한국세라믹학회지
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• 제35권3호
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• pp.245-250
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• 1998

Field emission display (FED) is currently being explored as a potential flat panel display technology. The need of new materials for low voltage blue phosphors for FED focused our attention on the $Y_2O_3-Nb_2O_5$ sys-tem. Yttrium niobate doped with $Bi^{3+}$ was prepared by solid state reaction technique and the optimization of the luminescent properties with a control of $Bi^{3+}$ amounts and Y/Nb ratio was studied. Under 254 nm and low voltage electron excitations $Bi^{3+}-activated$ YNbO4 phosphors showed a strong and relatively narrow blue em-ission band with a range of 420 to 450 nm, Especially 0.4wt% $Bi^{3+}\;doped\;YNbO_4$ phosphors with Y/Nb ratio of 1/1 showed the maximum emission intensity. Under low voltage electron excitation maximum emission in-tensity appeared at the Y/Nb ratio of 0.495/0.505.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.519-523
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• 2000

Using plasma-enhanced chemical vapor deposition (PECVD), carbon thin film as electron field emitter were fabricated. These carbon thin film were deposited on Si(100) substrate at several RF power. These film were estimated by raman spectroscopy, scanning electron microscopy, and field emission. The field electron emission property of these carbon thin film was estimated by a diode technique. As the result, we observed that the field emission properties of these films were promoted by higher RF power. These results are explained as change of surface morphology and structural properties of carbon thin film

• 한국재료학회지
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• 제11권9호
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• pp.740-744
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• 2001

The $Y_2SiO_5:Ce$ phosphors were synthesized by sol-gel technique in order to improve the performance of blue emitting phosphors for field emission display(FED). The resulted$Y_2SiO_5:Ce$ phosphors enhanced the emission intensity. In addition, calcination temperature of sol-gel technique(1300~140$0^{\circ}C$) was lower than that of the solid state reaction(>1$600^{\circ}C$). Under 365 nm and low voltage electron excitations. $Ce^{3+}$ -activated $Y_2SiO_5$phosphors showed blue emission band with a range of 400~ 430nm. Especially, 2mol% $Ce^{3+}$ doped $Y_2SiO_5:Ce$phosphors showed the maximum emission intensity. We have also controlled drying temperature of wet gel, pH, and $H_2O$/TEOS molar ratio for the optimum condition of TEOS hydrolysis.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.76-79
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• 2003

The characteristic of single wall carbon nanotube (SW-CNT) and herringbone nano fiber (HB-CNF) emitters was described. SW-CNT synthesized by arc discharge and HB-CNF prepared by thermal CVD were mixed with binders and conductive materials, and then were formed by screen-printing process. In order to obtain efficient field emissions, the surface treatment of rubbing & peel-off was applied to the printed CNT and CNF emitters. The basic structure of FED was of a diode type through fully vacuum packaging. Also, we proposed a new triode type of field emitter using a mesh gate plate having tapered holes and could achieve the ideal triode properties with no gate leakage currents.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제49권1호
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• pp.70-72
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• 2000

In this paper, a spacer process for FED(Field Emission Display) was developed with the glass to glass anodic bonding technology using Al film as an interlayer and a 3.5 inch monochromatic type FED was fabricated. Holder to dislocate spacers vertically was designed with (110) Si wafer by bulk etching. Spacers, $100\mum\; width\; and\; 1000\mum$ height, were formed on anode panel by spacer to glass anodic bonding and the fabricated FED was operated for emission at 1㎸ anode voltage.

• 한국세라믹학회지
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• 제43권11호
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• pp.743-745
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• 2006

The luminescence properties of $Sr_{1-x}Ba_xTiO_3:Pr$, Al red phosphor for Field Emission Displays (FEDs) have been investigated in powders prepared though solid-state reactions. $Sr_{1-x}Ba_xTiO_3:Pr$, Al red phosphors indicate a higher luminescent intensity, and have been found to have potential for field emission displays. The addition of Ba increased the luminescence intensity at 617 nm by up to 30%. Ba ions are effective in producing the energy transfers from host-to-activator in 4f-5d transitions.