• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2007.10a
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• pp.196-199
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• 2007

In this paper, we studied a ZnO-based film bulk acoustic wave resonator (FBAR) device fabricated on top of a novel multi-layered Bragg reflector with chromium adhesion layers $(0.03{\mu}m-thick)$ inserted. The performance of FBAR device could be significantly improved using proper thermal treatments. At ${\sim}2.75$ GHz, we could achieve good return loss and quality factor (Q). This device fabrication technique will be useful for the future mobile WiMAX applications.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• v.9 no.1
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• pp.371-375
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• 2005

In this paper, the resonance characteristics of ZnO-based FBAR devices are compared. Several FBAR device samples were fabricated by using three different annealing methods while one sample remained non-annealed as a reference for comparison. Resonance characteristics could be significantly improved by both Bragg reflector-annealing and/or post-annealing steps. Especially, the use of two-step annealings resulted in most desirable resonance characteristic improvement compared with the Bragg reflector-annealing or post-annealing step alone.

• Journal of information and communication convergence engineering
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• v.3 no.1
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• pp.23-27
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• 2005

In this paper, the effects of various annealing conditions on the resonance characteristics of ZnO-based FBAR devices are compared. Several FBAR device samples were fabricated by using three different annealing methods while one sample remained non-annealed as a reference for comparison. Return loss ($S_11$) could be significantly improved by both Bragg reflector-annealing and/or post-annealing. Especially, the use of the combined annealings resulted in most desirable resonance improvement compared with the Bragg reflector-annealing or post-annealing method alone.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.12 no.1
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• pp.18-26
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• 2001

In this paper, the resonant characteristics and modes of the film bulk acoustic wave resonator (FBAR) used in 1~2 GHz frequency region are analyzed by it's input impedance which was calculated by three dimensional finite element method formulated as eigenvalue problem using electro-mechanical wave equation and boundary condition. It was extracted that the resonant and the spurious characteristics considering the effects of electrode area and shape variation and unsymmetry of upper and lower electrode. Those effects couldn't be analyzed by on dimensional analysis, e.g. Mason equivalent model. The simulation result was confirmed by comparing with the simulation data from Mason model analysis and the measured data of the ZnO FBAR fabricated using micro-machining technique. Also, through the simulation of the area variations of FBAR, it was obtained that the optimum ratio of length and thickness is 20:1 and the minimum ratio is 5:1 to operate thickness vibration mode.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1594-1596
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• 2004

Film bulk acoustic resonator (FBAR) devices which adopt a membrane-type configuration are fabricated by a novel process. In contrast to the conventional FBAR structure, the newly fabricated resonator doesn't employ any supporting layer below or above it, so that the properties of piezoelectric layer are not influenced by the bottom electrode material. FBAR devices with Mo/AlN/Metal configuration are also fabricated. The frequency response characteristics ($S_{11}$) of the devices fabricated using the proposed process are compared with those of the conventional devices. The return losses are also estimated, in terms of the kind and thickness of bottom electrode materials.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.8
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• pp.711-715
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• 2003

In this study, we prepared ZnO/glass and ZnO/SiO$_2$/Si thin film by Facing Targets Sputtering (FTS) system for Film Bulk Acoustic Resonator (FBAR). When the ZnO thin film applied to piezoelectric thin film, it requires good c-axis preferred orientation. And c-axis orientation has a remarkable difference with preparation conditions. Therefore, c-axis orientation must be significantly evaluated as a function of deposition conditions. Moreover, in order to prepare ZnO thin film with good crystallographic properties and progressive of efficiency of product process, the ZnO thin film should be prepared as low temperature as possible. In this work, we prepared ZnO thin films on slide glass and SiO$_2$/Si substrate. And the crystallographic characteristics of ZnO thin films on sputtering conditions were investigated by alpha-step and X-ray diffraction.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2007.06a
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• pp.437-440
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• 2007

This paper presents the improvement of the resonance characteristics of film bulk acoustic-wave resonator (FBAR) devices fabricated on multilayer Bragg reflectors (BRs) based on inserting ultra-thin chromium (Cr) adhesion layers into BRs and post-annealing processes. The measurements show excellent improvement of return loss $(S_{11})$ and Q-factor by the combined use of Cr adhesion layers and thermal treatments particularly for 120 minutes at $200^{\circ}C$.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2003.12a
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• pp.59-63
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• 2003

체적 음향파 공진기(Film bulk acoustic resonator, FBAR)는 2~10 Ghz 대역의 차세대 이동 통신용 구현에 필수적인 부품이기 때문에 국내외에서 활발한 연구가 진행되고 있다. 본 논문에서는 FBAR 소자 제조를 위한 연구에서 원자층 증착(Atomic layer deposition, ALD) 방법에 의한 ZnO buffer layer 위에 스퍼터링 방법을 이용한 2-step 방법을 사용하여 제조하였다. ALD를 이용한 ZnO buffer layer는 diethylzinc(DEZn)/$H_2O$를 순차적으로 주입하여 증착하였다. 이 때 두 원료물질 사이에 고순도 Ar 가스를 purge gas로 사용하였다. 원료의 주입시간은 1초, 원료간 purge 시간은 23 초로 하고 증착하였다. 2-step 방법을 이용할 경우, 스퍼터링 방법만을 이용하였을 때 보다 우수한 c-축 배향성 및 박막의 표면형상이 관찰되었다. 2-step 방법을 FBAR 소자 제작에 적용할 경우 보다 우수한 특성의 공진기를 제작할 수 있을 것으로 기대된다.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.20 no.4
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• pp.7-11
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• 2006

In this paper, it is reported that film-bulk-acoustic resonator with high c-axis oriented AIN film on $Mo/SiO_2/Si(100)$ using metal-organic-chemical-vapor deposition was fabricated. The resonant frequency and anti-resonant frequency of the fabricated resonator were observed with 3.189[GHz] and 3.224[GHz], respectively. The quality factor and the effective electromechanical coupling coefficient(${k_{eff}}^2$) were measured with 24.7 and 2.65[%], respectively. The conditions of AIN deposition were substrate temperature of $950[^{\circ}C]$, pressure of 20Torr, and V-III ratio of 25000. A high c-axis oriented AIN film with $4{\times}10^{-5}[\Omega{cm}]$ resistivity of Mo bottom electrode and $4[^{\circ}]$ of AIN(0002) full-width at half-maximum(FWHM) on $Mo/SiO_2/Si(100)$ was grown successfully. The FWHM value of deposited AIN film is useful for the RF band pass filter specification for GHz-band wireless local area network.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.226-227
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• 2009

FBAR(Film Bulk Acoustic Resonator)는 높은 민감도와 실리콘기판을 활용한 집적화의 가능화 때문에 최근 부각되고 있는 바이오센서이다. 특히 AlN 압전층을 이용한 FBAR는 배향특성이 우수하고 높은 음향속도를 가지는 장점을 가지고 있다. 본 논문에서는 AlN의 Full Width at Half Maximum(FWHM)값이 $0.23^{\circ}$인 우수한 (002) 방향의 FBAR를 제작한 후 상부 전극위에 Anti-CEA와 CEA를 흡착하여 공진주파수의 변화를 조사하였다. 그 결과 Anti-CEA 흡착 후와 CEA 흡착 후 공진주파수의 변화는 각각 832.875KHz, 941.748KHz이였으며, 각각 3496 $Hz{\cdot}cm^2/ng$, 3482 $Hz{\cdot}cm^2/ng$의 높은 민감도를 확인하였다.