• The Korean Journal of Zoology
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• v.26 no.3
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• pp.211-217
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• 1983

Genetic polymorphism of transferrin $(T_f)$ subtypes in Jeju population was studied by isoelectric focusing of human sera on polyacrylamide gels under high voltage, and haptolobin (Hp) polymorphism in Seoul and Jeju population was studied by polyacrylamide gel electrophoresis. Among 946 normal samples, three common types of transferrin, $T_{f}C_{1}, T_{f}C_{1}-C_{2} and T_{f}C_{2}$ were observed with some variants migrating slower than $T_{f}C$ subtypes, while among 139 patient (hepatitis) samples, only three common types were found. The gene frequencies were calculated as follows; in normal population, $T_{f}C^{1}$ was 0.7220; $T_{f}C^{2}, 0.2743; T_{f}D^{Jeju}, 0.0037$, and in patient population, $T_{f}C^{1} was 0.7194; T_{f}C^{2}, 0.2806$ respectively. Among 460 samples in Seoul and 502 in Jeju population, three types of haptoglobin, Hp 1-1, Hp 2-1 and Hp 2-2 were observed. The gene frequency of $Hp^1$ was 0.304, $Hp^2$, 0.696 in Seoul and in Jeju, $Hp^1$ was 0.269 and $Hp^2$, 0.731, respectively. The frequencies of the genes and the polymorphic phenotypes were discussed comparatively with the other populations.

• Bulletin of the Korean Mathematical Society
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• v.58 no.4
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• pp.915-937
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• 2021

In this paper we deal with the open problem posed by Lü, Li and Yang [10]. In fact, we prove the following result: Let f(z) be a transcendental meromorphic function of finite order having finitely many poles, c₁, c₂, …, c_n ∈ ℂ\{0} and k, n ∈ ℕ. Suppose fⁿ(z), f(z+c₁)f(z+c₂) ⋯ f(z+c_n) share 0 CM and fⁿ(z)-Q₁(z), (f(z+c₁)f(z+c₂) ⋯ f(z+c_n))^(k) - Q₂(z) share (0, 1), where Q₁(z) and Q₂(z) are non-zero polynomials. If n ≥ k+1, then $(f(z+c_1)f(z+c_2)\;{\cdots}\;f(z+c_n))^{(k)}\;{\equiv}\;{\frac{Q_2(z)}{Q_1(z)}}f^n(z)$. Furthermore, if Q₁(z) ≡ Q₂(z), then $f(z)=c\;e^{\frac{\lambda}{n}z}$, where c, λ ∈ ℂ \ {0} such that e^{λ(c₁+c₂+⋯+c_n)} = 1 and λ^k = 1. Also we exhibit some examples to show that the conditions of our result are the best possible.

• Journal of the Korean Vacuum Society
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• v.1 no.1
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• pp.145-152
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• 1992

Si surfaces exposed to CHF3/C2F6 gas plasmas ih reactive ion etching (RIE) have been characterized by X-ray photoelectron spectroscopy (XPS). CHF3/C2F6 gas plasma exposure of Si surface leads to the deposition of residual film containing carbon and fluorine. The narrow scan spectra of C 1s show various bonding states of carbon as C-Si, C-F/H, C-CFx(x $\leq$ 3), C-F, C-F2, and C-F3. The chemical bonding states of fluorine are described with F-Si, F-C and F-O. And the oxygen and silicon are also detected. The effects of parameters for reactive ion etching as CHF3/C2F6 gas ratio, RF power, and pressure are investigated.

• Korean Journal of Mathematics
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• v.27 no.2
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• pp.437-444
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• 2019

For c > -1, let ${\nu}_c$ denote a weighted radial measure on ${\mathbb{C}}$ normalized so that ${\nu}_c(D)=1$. For $c_1,c_2>-1$ and $f{\in}L^1(D^2,\;{\nu}_{c_1}{\times}{\nu}_{c_2})$, we define the weighted Berezin transform $B_{c_1,c_2}f$ on $D^2$ by $$(B_{c_1,c_2})f(z,w)={\displaystyle{\smashmargin2{\int\nolimits_D}{\int\nolimits_D}}}f({\varphi}_z(x),\;{\varphi}_w(y))\;d{\nu}_{c_1}(x)d{\upsilon}_{c_2}(y)$$. This paper is about the space $M^p_{c_1,c_2}$ of function $f{\in}L^p(D^2,\;{\nu}_{c_1}{\times}{\nu}_{c_2})$ ) satisfying $B_{c_1,c_2}f=f$ for $1{\leq}p<{\infty}$. We find the identity operator on $M^p_{c_1,c_2}$ by using invariant Laplacians and we characterize some special type of functions in $M^p_{c_1,c_2}$.

• Journal of Korean Society of Environmental Engineers
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• v.38 no.6
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• pp.317-322
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• 2016

While PFOS sodium salt ($C_8F_{17}SO_3Na$) was not degraded by microorganisms for 28 days, the 4 alternatives were biodegraded at the rates of 21.6% for $C_{25}F_{17}H_{32}S_3O_{13}Na_3$, 20.5% for $C_{15}F_9H_{21}S_2O_8Na_2$, 15.8% for $C_{23}F_{18}H_{28}S_2O_8Na_2$ and 6.4% for $C_{17}F_9H_{25}S_2O_8Na_2$, respectively. The acute toxicity test using Daphnia magna was conducted for 48 hours, the half effective concentration ($EC_{50}$) of PFOS sodium salt ($C_8F_{17}SO_3Na$) was evaluated in 54.5 mg/L. While the 4 alternatives did not show any effect at 500.0 mg/L. The surface tension of the PFOS salt ($C_8F_{17}SO_3Na$) is 46.2 mN/m at a concentration of 500.0 mg/L. While the surface tension of the 4 alternatives was found to be superior to PFOS sodium salt ($C_8F_{17}SO_3Na$). The surface tension of $C_{23}F_{18}H_{28}S_2O_8Na_2$ (20.9 mN/m) has the lowest, followed by $C_{15}F_9H_{21}S_2O_8Na_2$ (23.4 mN/m), $C_{17}F_9H_{25}S_2O_8Na_2$ (27.3 mN/m), $C_{25}F_{17}H_{32}S_3O_{13}Na_3$ (28.2 mN/m). The four kinds of alternatives ($C_{15}F_9H_{21}S_2O_8Na_2$, $C_{17}F_9H_{25}S_2O_8Na_2$, $C_{23}F_{18}H_{28}S_2O_8Na_2$, $C_{25}F_{17}H_{32}S_3O_{13}Na_3$) were found to be superior to PFOS sodium salt ($C_8F_{17}SO_3Na$) in terms of biodegradation, Daphnia sp. acute toxicity and surface tension, and thus they were considered applicable as PFOS alternatives. Especially biodegradation rate of $C_{15}F_9H_{21}S_2O_8Na_2$, $C_{23}F_{18}H_{28}S_2O_8Na_2$ and $C_{25}F_{17}H_{32}S_3O_{13}Na_3$ was relatively high as 15.8~21.6%, and Daphnia sp. acute toxicity and surface tension were considerably superior (surface tension 39~55%) to PFOS sodium salt. Therefore, these alternatives are considered to be available as an alternative of PFOS.

• Journal of the Korean Chemical Society
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• v.43 no.1
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• pp.52-57
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• 1999

The anionic complexes, [ln($C_6F_5)_4$]-, which are thermal and moisture sensitive, have been prepared by the reaction of In($C_6F_5)_3{\cdot}D(D=CH_3CN$, O($C_2H_5)_2$) with the system ($CH_3)_3SiC_6F_5$/CsF, $C_6F_5$MgBr or Cd($C_6F_5)_2$. The stable anionic indium(III) complexes are obtained through cation exchange with PNPCI ([PNP]= bis(triphenylphosphino)ammonium). The pure substance is obtained by column chromatography. These new anionic complexes are unambiguously identifed by NMR-spectroscopy, IR spectroscopy, molecular weight, DTA/TG and elemental analysis.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.36-36
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• 2010

Low-pressure fluorocarbon plasmas are widely used in microelectronics fabrication for a variety of surface modification purposes. In particular, fluorocarbon plasmas are used for the etching of dielectrics such as silicon dioxide and silicon nitride. Among the various fluorocarbons, this study focuses on C4F6 molecules (C4F6s) which are composed of hexafluorocyclobutene (c-C4F6), hexafluoro-1, 3-butadiene (1, 3-C4F6), and hexafluoro-2-butyne (2-C4F6). We have investigated the dissociation reactions of C4F6s, resulting in CF2, CF3, C2F3, and C3F3 fragments, by using the wB97X-D functional with various basis sets. In this presentation, the geometrical properties, energetics, and dissociation mechanisms of C4F6s will be suggested.

• Nuclear Engineering and Technology
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• v.2 no.4
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• pp.269-272
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• 1970

Thermoluminescence (TL) from LiF powder of purity 99.98 ％ was accomplished and this TL intensity showed glow peaks at 12$0^{\circ}C$, 22$0^{\circ}C$ and 30$0^{\circ}C$. Sintered LiF powder which has an activation of 2％ proportion by weight of MgC1$_2$show strong increased TL and this characteristic of the glow curve was investigated precisely. LiF which is used in TL dosimetry has been known to have electrons caused by impurities such as Mg, Mn, etc. This experiment shows that Mg, one of the impurities, is definitely diffused through LiF crystals. The effects of sintering time were detected in this glow curve and it was confirmed that MgC1$_2$also has a TL effect.

• Transactions on Electrical and Electronic Materials
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• v.16 no.2
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• pp.90-94
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• 2015

In this study, the characterizations of oxide contact hole etching are investigated with C₄F₈/O₂/Ar and CH₂F₂/C₄F₈/O₂/ Ar plasma. As the percent composition of C₄F₈ in a C₄F₈/O₂/Ar mixture increases, the amount of polymer deposited on the etched surface also increases because the C_xF_y polymer layer retards the reaction of oxygen atoms with PR. Adding CH₂F₂ into the C₄F₈/O₂/Ar plasma increases the etch rate of the oxide and the selectivity of oxide to PR. The profile of contact holes was close to 90°, and no visible residue was seen in the SEM image at a C₄F₈/(C₄F₈+O₂) ratio of 58%. The changes of chemical composition in the chamber were analyzed using optical emission spectroscopy, and the chemical reaction on the etched surface was investigated using X-ray photoelectron spectroscopy.

• Journal of the Korean Vacuum Society
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• v.7 no.4
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• pp.368-373
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• 1998

As device dimensions approach submicrometer size in ULSI, the demand for interlayer dielectric materials with very low dielectric constant is increased to solve problems of RC delay caused by increase in parasitic resistance and capacitance in multilevel interconnectins. Fluorinated amorphous carbon in one of the promising materials in ULSI for the interlayer dielectric films with low dielectric constant. However, poor thermal stability and adhesion with Si substrates have inhibited its use. Recently, amorphous hydrogenated carbon (a-C:H) film as a buffer layer between the Si substrate and a-C:F has been introduced because it improves the adhesion with Si substrate. In this study, therfore, a-C:F/a-C:H films were deposited on p-type Si(100) by ECRCVD from $C_2F_6, CH_4$and $H_2$gas source and investigated the effect of forward power and composition on the thickness, chemical bonding state, dielectric constant, surface morphology and roughness of a-C:F films as an interlayer dielectric for ULSI. SEM, FT-IR, XPS, C-V meter and AFM were used for determination of each properties. The dielectric constant in the a-C:F/a-C:H films were found to decrease with increasing fluorine content. However, the dielectric constant increased after furnace annealing in $N_2$atomosphere at $400^{\circ}C$ for 1hour due to decreasing of flurorine content. However, the dielectric constant increased after furnace annealing in $N_2$atmosphere at $400^{\circ}C$ for 1hour due to decreasing of fluorine concentration.