• Journal of Korean Institute of Industrial Engineers
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• v.30 no.3
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• pp.250-260
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• 2004

This study considers a linear connected-(r,s)-out-of-(m,n):F lattice system whose components are ordered like the elements of a linear (m,n )-matrix. We assume that all components are in the state 1 (operating) or 0 (failed) and identical and s-independent. The system fails whenever at least one connected (r,s)-submatrix of failed components occurs. The purpose of this paper is to present an optimization scheme that aims at minimizing the expected cost per unit time. To find the optimal threshold of maintenance intervention, we use a genetic algorithm for the cost optimization procedure. The expected cost per unit time is obtained by Monte Carlo simulation. The sensitivity analysis to the different cost parameters has also been made.

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.737-739
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• 1998

Gate insulators using various fluoride films were investigated for thin film transistor applications. Conventional oxide containing materials exhibited high interface states, high $D_{it}$ gives an increased threshold voltage and poor stability of TFT. To improve TFT performances, we must reduce interface trap charge density between Si and gate insulator. In this paper, we investigated gate insulators such as such as $CaF_2$, $SrF_2$, $MgF_2$ and $BaF_2$. These materials exhibited an improvement in lattice mismatch, difference in thermal expansion coefficient, and electrical stability MIM and MIS devices were employed for an electrical characterization and structural property examination. Among the various fluoride materials, $CaF_2$ film showed an excellent lattice mismatch of 0.737%, breakdown electric field higher than 1.7MV/cm and leakage current density of $10^{-6}A/cm^2$. This paper probes a possibility of new gate insulator material for TFT application.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.12
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• pp.755-760
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• 1999

Various fluoride films were investigated for a gate insulator of thin film transistor application. Conventional oxide containing materials like $SiO_2\;Ta_2O_5\; and \; Al_2O_3$ exhibited high interface states which lead to an increased threshold voltage and poor stability of TFT. In this paper, we investigated gate insulators using a binary matrix system of fluoride such as $CaF_2,\; SrF_2\; MgF_2,\; and\; BaF_2$. These materials exhibited an improvement in lattice mismatch, interface state and electrical stability. MIM and MIS devices were employed for an electrical characterization and structural property examination. Among the various fluoride materials, $CaF_2$ film showed an excellent lattice mismatch of 5%, breakdown electric field higher than 1.2MV/cm and leakage current density of $10^{-7}A/cm^2$. MIS diode having $Ca_2$ film as an insulation layer exhibited the interface states as low as $1.58\times10^{11}cm^{-2}eV^{-1}$. This paper probes a possibility of new gate insulator materials for TFT applications.

• Proceedings of the KSME Conference
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• 2003.04a
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• pp.1827-1832
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• 2003

In this research, the simulation method for acoustic sounds by a uniform flow around a two-dimensional circular cylinder by using the finite difference lattice Boltzmann model is explained. To begin with, we examine the boundary condition which determined with the distribution function $f_i^{(0)}$ concerning with density, velocity and internal energy at boundary node. Very small acoustic pressure fluctuation, with same frequency as that of Karman vortex street, is compared with the pressure fluctuation around a circular cylinder. The acoustic sound' propagation velocity shows that acoustic approa ching the upstream, due to the Doppler effect in the uniform flow, slowly propagated. For the do wnstream, on the other hand, it quickly propagates. It is also apparently the size of sound pressure was proportional to the central distance $r^{-1/2}$ of the circular cylinder. The lattice BGK model for compressible fluids is shown to be one of powerful tool for simulation of gas flows.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.49 no.6
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• pp.27-38
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• 2012

In this paper, we introduce CoMP in 3GPP LTE-Advanced Release 11 to take care of shadowing effects appearing in cell-edge areas to meet rapidly increasing demand for high speed transmission and multi-media data. In order to mitigate interference, orthogonalizing is ideal but it is slightly difficult to be applied to real systems. Therefore, interference alignment and avoidance are used in practical applications. Interference alignment is a scheme enabling us to consider interference our friend not enemy. We show lattice codes in Gaussian channel achieve Shannon capacity where strong interference exists. In addition, we show the relationship between channel parameter a and DoF(Degree of Freedom) applying lattice codes to interference alignment for interference channel with three users.

• Honam Mathematical Journal
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• v.36 no.4
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• pp.885-893
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• 2014

In this paper, we introduce the concept of a right f-derivation in incline algebras and give some properties of incline algebras. Also, the concept of d-ideal is introduced in an incline algebra with respect to right f-derivations.

• Journal of applied mathematics & informatics
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• v.33 no.3_4
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• pp.417-424
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• 2015

In this paper the following is proved: Let L be a subspace lattice on a Hilbert space H and X and Y be operators acting on a Hilbert space H. If XE = EX for each E ${\in}$ L, then there exists an operator A in AlgL such that AX = Y if and only if sup $\left{\frac{\parallel{XEf}\parallel}{\parallel{YEf}\parallel}\;:\;f{\in}H,\;E{\in}L\right}$ = K < $\infty$ and YE=EYE. Let x and y be non-zero vectors in H. Let P_x be the orthogonal pro-jection on sp(x). If EP_x = P_xE for each E $\in$ L, then the following are equivalent. (1) There exists an operator A in AlgL such that Ax = y. (2) < f, Ey > y =< f, Ey > Ey for each E ${\in}$ L and f ${\in}$ H.

• Journal of applied mathematics & informatics
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• v.14 no.1_2
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• pp.387-395
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• 2004

Given operators X and Y acting on a Hilbert space H, an interpolating operator is a bounded operator A such that AX = Y. An interpolating operator for n-operators satisfies the equation $AX_{i}\;=\;Y_{i}$, for i = 1,2,...,n. In this article, we showed the following: Let H be a Hilbert space and let L be a subspace lattice on H. Let X and Y be operators acting on H. Assume that range(X) is dense in H. Then the following statements are equivalent: (1) There exists an operator A in AlgL such that AX = Y, $A^{*}$ = A and every E in L reduces A. (2) sup ${\frac{$\mid$$\mid${\sum_{i=1}}^n\;E_iYf_i$\mid$$\mid$}{$\mid$$\mid${\sum_{i=1}}^n\;E_iXf_i$\mid$$\mid$}$:n{\epsilon}N,f_i{\epsilon}H\;and\;E_i{\epsilon}L}\;<\;{\infty}$ and = for all E in L and all f, g in H.

• 한국전산유체공학회:학술대회논문집
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• 2004.03a
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• pp.113-118
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• 2004

This paper presents a two-dimensional edge tone to predict the frequency characteristics of the discrete oscillations of a jet-edge feedback cycle by the finite difference lattice Boltzmann method (FDLBM). We use a new lattice BGK compressible fluid model that has an additional term and allow larger time increment comparing the conventional FDLBM, and also use a boundary fitted coordinates. The jet is chosen long enough in order to guarantee the parabolic velocity profile of the jet at the outlet, and the edge consists of a wedge with an angle of $\alpha=23^0$. At a stand-off distance $\omega$, the edge is inserted along the centreline of the jet, and a sinuous instability wave with real frequency f is assumed to be created in the vicinity of the nozzle and th propagate towards the downstream. We have succeeded in capturing very small pressure fluctuations result from periodically oscillation of jet around the edge. That pressure fluctuations propagate with the sound speed. Its interaction with the wedge produces an irrotational feedback field which, near the nozzle exit, is a periodic transverse flow producing the singularities at the nozzle lips. The lattice BGK model for compressible fluids is shown to be one of powerful tool for computing sound generation and propagation for a wide range of flows.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.24 no.4
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• pp.66-72
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• 2010

In this paper, AZO thin film was deposited on polyethylene terephthalate(PET) substrate by r. f. magnetron sputtering method from a ZnO target mixed with 2[wt%] Al2O3. The flexible film-typed dye sensitized solar cell(F-DSC) was fabricated and photo-electric conversion efficiency was investigated. The results showed that the minimum resistivity and the maximum deposition rate of AZO conducting film were recorded as $1.8{\times}10^{-3}[{\Omega}{\cdot}cm]$ and 25.5[nm/min], respectively at r.f. power of 220[W]. From the analysis of XPS data an improvement of electrical resistivity or an increase in carrier concentration with increasing sputtering power may be related to the generation of lattice imperfections as a result of increasing component ratio of O1s/Zn2p, which generates donor carriers or active growth of crystalline grain. The photo-electric conversion efficiency of F-DSC with AZO conducting electrode was over 2.79[%], which was comparable as that with commercially available ITO electrode.