• 동력기계공학회지
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• 제15권2호
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• pp.31-36
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• 2011

The flow characteristics on the periodically arranged semi-circular ribs in a rectangular channel for turbulent flow have been investigated numerically. The aspect ratio of the rectangular channel was AR=5, the rib height to hydraulic diameter ratio was 0.07 and rib height to channel height ratio was e/H=0.117. The v2-f turbulence model and SST k-${\omega}$ turbulence model were used to find the flow characteristics of near the wall which are suited for realistic phenomena. The numerical analysis results show turbulent flow characteristics and pressure drop at the near the wall as observed experimentally. The results predict that turbulent kinetic energy(k) is closely relative to the diffusion of recirculation flow, and v2-f turbulence model simulation results have a good agreement with experimental.

• 대한음성학회:학술대회논문집
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• 대한음성학회 2007년도 한국음성과학회 공동학술대회 발표논문집
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• pp.265-269
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• 2007

This paper reports an compared acoustic analysis on speech produced by two Korean groups, normal and AOS, focusing on utterances of V-CV structures. Major concerns include: 1) types of errors (distortion/substitution) according to the place of articulation, 2) duration of each syllable, 3) VOTs of stop sounds, and 4) F1 and F2 of vowels. In terms of the differences in these phonetic characteristics between the two groups, we aim to clarify some characteristics of AOS and to provide fundamental criteria for diagnosing and evaluating the disease.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 하계학술대회 논문집 B
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• pp.818-820
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• 2004

This paper is described the insulation design and 3-D electromagnetic analysis of 6.6kV main transformer for a vessel by F.E.M.. To obtain the optimal design of insulation structure, the electric field stress is analyzed and estimated the proposed model A and B for the characteristics investigation according to the insulation thickness and position. And the performance characteristics of 6.6kV transformer are estimated as the equivalent circuit parameters computed by F.E.M. analysis.

• Journal of Electrical Engineering and Technology
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• 제9권6호
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• pp.2070-2078
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• 2014

In this work, the frequency response of gate-all-around (GAA) Ge/GaAs heterojunction tunneling field-effect transistor (TFET) with hetero-gate-dielectric (HGD) and pnpn channel doping profile has been analysed by technology computer-aided design (TCAD) device-circuit mixed-mode simulations, with comparison studies among ppn, pnpn, and HGD pnpn TFET devices. By recursive tracing of voltage transfer curves (VTCs) of a common-source (CS) amplifier based on the HGD pnpn TFET, the operation point (Q-point) was obtained at $V_{DS}=1V$, where the maximum available output swing was acquired without waveform distortion. The slope of VTC of the amplifier was 9.21 V/V (19.4 dB), which mainly resulted from the ponderable direct-current (DC) characteristics of HGD pnpn TFET. Along with the DC performances, frequency response with a small-signal voltage of 10 mV has been closely investigated in terms of voltage gain ($A_v$), unit-gain frequency ($f_{unity}$), and cut-off frequency ($f_T$). The Ge/GaAs HGD pnpn TFET demonstrated $A_v=19.4dB$, $f_{unity}=10THz$, $f_T=0.487$ THz and $f_{max}=18THz$.

• 폴리머
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• 제33권3호
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• pp.191-197
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• 2009

박막형 유기 태양전지의 성능 향상을 위하여 정공 수송층인 CuPc 층에 강한 p형 유기 반도체인 $F_4$-TCNQ을 도핑하여 ITO/PEDOT:PSS/CuPc: $F_4$-TCNQ(5wt%)/CuPc:C60 (blending ratio 1 : 1)/C60/BCP/LiF/Al의 이종 접합 구조를 가지는 P-i-n형 유기 박막형 태양전지 소자를 진공증착 장비를 이용하여 제조한 후, 유기 태양전지의 전류 밀도-전압(J-V) 특성, 단락 전류($J_{sc}$), 개방 전압($V_{oc}$), 충진 인자(fill factor: FF), 에너지 전환 효율(${\eta}_e$) 등을 측정하고 계산하여 성능 굉가를 수행하였다. CuPc 층에 $F_4$-TCNQ을 도핑함으로써 에너지 흡수 스펙트럼에서 흡수강도가 증가하였으며, $F_4$-TCNQ가 도핑된 CuPc 박막에서 $F_4$-TCNQ 유기 분자의 분산성 향상, 박막의 표면 균일성, 주입 전류(injection currents) 향상 효과등에 의해서 제조된 p-i-n형 유기 박막 태양전지의 성능이 향상되는 것으로 확인되었다. 제조된 유기 태양전지의 에너지 전환 효율(${\eta}_e$)은 0.15%로 실리콘 태양전지와 비교해서 아직도 성능 향상을 위한 많은 노력이 필요함을 보여 준다.

• 센서학회지
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• 제3권2호
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• pp.65-73
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• 1994

고주파 마그네트론 스퍼터링법에 의해 TO:F($SnO_{2}:F$)막을 제조하고 막의 구조적, 전기적 및 광학적 특성을 조사하였다. TO:F막은 $SnF_{2}$를 무게비로 첨가한 $SnO_{2}$ 타겟을 사용하여 증착되었으며 투명도전막으로서의 최적증착조건은 타겟내의 $SnF_{2}$의 첨가량이 15wt.% 고주파출력이 150W, 기판온도가 $150^{\circ}C$ 및 반응실내의 동작압력이 2mmTr일 때이다. 최적 증착조건에서 저항률은 $9{\times}10^{-4}{\Omega}{\cdot}cm$였으며 광투과도는 550nm에서 88%였다. 광투과도로부터 구해진 광학적 밴드갭은 타겟내에 $SnF_{2}$가 첨가되지 않은 경우 및 15wt.% 첨가된 경우에 각각 3.84eV 및 3.9eV로 나타났다. X-선회절분석의 결과 TO막 및 TO:F막은 (101),(200)방향으로 성장한 tetragonal rutile구조를 가지고 있었다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2006년도 하계종합학술대회
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• pp.623-624
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• 2006

In this paper, we introduce the design and fabrication of V-band power amplifier MMIC with excellent gain-flatness for IEEE 802.15.3c WPAN system. The V-band power amplifier was designed using ETRI' $0.12{\mu}m$ PHEMT process. The PHEMT shows a peak transconductance ($G_{m,peak}$) of 500 mS/mm, a threshold voltage of -1.2 V, and a drain saturation current of 49 mA for 2 fingers and $100{\mu}m$ total gate width (2f100) at $V_{ds}$=2 V. The RF characteristics of the PHEMT show a cutoff frequency, $f_T$, of 97 GHz, and a maximum oscillation frequency, $f_{max}$, of 166 GHz. The gains of the each stages of the amplifier were modified to have broadband characteristics of input/output matching for first and fourth stages and get more gains of edge regions of operating frequency range for second and third stages in order to make the gain-flatness of the amplifier excellently for wide band. The performances of the fabricated 60 GHz power amplifier MMIC are operating frequency of $56.25{\sim}62.25\;GHz$, bandwidth of 6 GHz, small signal gain ($S_{21}$) of $16.5{\sim}17.2\;dB$, gain flatness of 0.7 dB, an input reflection coefficient ($S_{11}$) of $-16{\sim}-9\;dB$, output reflection coefficient ($S_{22}$) of $-16{\sim}-4\;dB$ and output power ($P_{out}$) of 13 dBm. The chip size of the amplifier MMIC was $3.7{\times}1.4mm^2$.

• 대한전자공학회논문지SD
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• 제48권9호
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• pp.1-5
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• 2011

본 논문에서는 AlGaN/GaN HEMT의 DC 및 RF 특성을 최적화 하기위해서 2차원 소자 시뮬레이터를 이용하여 연구를 진행하였다. 먼저, AlGaN층의 두께, Al mole fraction 의 변화에 따른 2차원 전자가스 채널의 농도변화가 생기는 현상을 바탕으로 DC특성을 분석하였다. 다음 게이트, 소스, 드레인 전극의 크기와 위치 변화에 따른 RF 특성을 분석하였다. 그 결과 Al mole fraction이 0.2몰에서 0.45몰로 증가할수록 전달이득(transconductance, $g_m$) 과 I-V 특성이 향상됨을 확인하였다. 한편 AlGaN층의 두께가 10nm에서 50nm로 증가할수록 I-V특성은 향상되지만 $g_m$은 감소하는것을 확인하였다. RF 특성에서는 게이트 길이가 가장 큰 영향을 미치며 그 길이가 짧을수록 RF특성이 향상되는 것을 확인하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2004년도 학술대회 논문집 정보 및 제어부문
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• pp.690-692
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• 2004

Differently from an existing analog control, because the digital control includes microprocessor basically, the digital control is enable to monitor internal parameters of DC-DC converter and to control output voltage remotely by communicating with a Windows based PC and also to monitor whether exact voltage is output or not. These things are impossible in an analog control. In this paper, a simple flyback converter is taken as a control target and is controlled by a microcontroller(TMS320F2812). This converter can make variable outputs 1.8V to 5V from 30V input voltage remotely in PC. Finally the response characteristics of a step reference voltage and in a steady state are experimented to verify the feasibility and the usefulness of this digital controlled converter.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.374-377
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• 2001

We have synthesized poly(3-hexylthiophene)(P3HT), which is the most famous conducting polymer and studied the optical properties of P3HT. And then fabricated the device using P3HT as an emitting layer. For the improve of hole injection from ITO electrode to P3HT emitting layer, we use transparent polyaniline(PANI) electrode. In the voltage-current-luminance characteristics of ITO/PANI/P3HT/LiF/Al device which use the PANI film synthesised during 5 cycle, the device turn on at the 2V and the luminance of $218nW/cm^{2}$ obtained at 12V. External quantum efficiency of ITO/PANI/P3HT/LiF/Al increased at 8V than that of ITO/P3HT/LiF/Al device.