• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.497-500
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• 1999

This paper reports on the fabrication and characteristics of recessed gate GaN MESFETs fabricated using a photoelectrochemical wet etching method. The unique etching process utilizes photo-resistive mask and KOH based etchant. GaN MESFETs with successfully recessed gate structure was characterized in terms of dc and RF performance. The fabricated GaN MESFET exhibits a current saturation at $V_{DS}$ = 4 V and a pinch-off at $V_{GS}$ =-3V The peak drain current of the device is about 230mA/mm at 300 K and the value is remained almost same for 500K operation. The $f_{T}$ and $f_{max}$ from the device are 6.357Hz and 10.25 GHz, respectively.y.y.

• 한국전기화학회:학술대회논문집
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• 1999.04a
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• pp.77-77
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• 1999

• 전기의세계
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• v.35 no.10
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• pp.643-649
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• 1986

본고에서는 선진국(미국, 일본 등) 및 우리나라에서 최근에 개발되어 상품화되었거나 연구 진행중에 있는 정지형 전력변환기(UPS, 고압용 V.V.V.F)의 특성 및 구성에 대한 최신기술에 관하여 간략하게 다루었다.

• Journal of the Korean Geotechnical Society
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• v.21 no.6
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• pp.101-115
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• 2005

For the site characterization at two inland areas, Gyeongju and Hongsung, which represent geomorphic and geologic characteristics of inland region in Korea, in-situ seismic tests containing borehole drilling investigations and resonant column tests were peformed and site-specific seismic response analyses were conducted using equivalent linear as well as nonlinear scheme. The soil deposits in Korea were shallower and stiffer than those in western US, from which the site coefficients and site classification system in Korea were derived. Most sites were categorized as site classes C and D based on the mean shear wave velocity $(V_s)$ of the upper 30 m $(V_s30)$, ranging between 250 and 650 m/s. According to the acceleration response spectra determined from the site response analyses, the site coefficients specified in the current Korean seismic design guide underestimate the ground motion in the short-period band and overestimate the ground motion in mid-period band. These differences can be explained by the differences in the bedrock depth and the soil stiffness profile between Korea and western US. The site coefficients, $F_a$ for short-period and $F_v$ for mid-period, were re-evaluated and the site classification system, in which sites C and D were subdivided according to $V_s20,\;V_s15,\;and\;V_s10$ together with the existing $V_s30$ was introduced accounting for the local geologic conditions at inland region of the Korean peninsula. The proposed site classification system in this paper is still rudimentary and requires modification.

• Journal of Biomedical Engineering Research
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• v.18 no.3
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• pp.267-272
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• 1997

he scintillation detector having $BaF^2$ crystal with 3.6cm dia${\times}$2.0 cm thick was provided. The energy and timing characteristics were measured and compared with NaI(Tl) scintillation detectors, which widely used in unclear medicine. In order to measure the energy spectrum, the radioactive sources used were $^{22}Na,\;^{54}Mn,\;^{57}Co,\;^{137}Cs$ and the source to detector distance was 7cm. For the timing characteristic, NaI(Tl)(1" ${\times}$ 1")-$BaF^2$ and NaI(Tl)(3" ${\times}$ 3")-$BaF^2$ timing coincidence systems were prepared and the used source was $^{22}Na$ emitting 511keV annihilation photons. For the 511keV gamma-ray emitted from $^{22}Na$, It was revealed that the timing response of the $BaF^2$ detector was faster than NaI(Tl)(1" ${\times}$ 1") and NaI(Tl)(3" ${\times}$ 3") detector used in this experimental investigation. The energy characteristics of the $BaF^2$ detector had a good values for about 500keV energy range.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.456-459
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• 2000

Thin films of vanadium oxide(V$O_x$) have been deposited by r.f. magnetron sputtering from $V_2$$O_5$ prget in gas mixture of argon and oxygen. Crystal structure, surface morphology, chemical composition and bonding properties of films in-situ annealed in $O_2$ ambient with various heat-treatment conditions are characterized through XRD, SEM, AES, RBS and FTIR measurements. The filrns annealed below 200 $^{\circ}C$are amorphous, and those annealed above 30$0^{\circ}C$ are polycrystalline. The growth of grains and the transition of vanadium oxide into the higher oxide have been obsenred with increasing the annealing temperature and time. The increase of O/V ratio with increasing the annealing temperature and time is attributed to the diffusion of oxygen and the partial filling of oxygen vacancies. It is observed that the oxygen atoms located on the V-0 plane of $V_2$$O_5$ layer participate more readily in the oxidation process.

• Journal of the Korea institute for structural maintenance and inspection
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• v.28 no.3
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• pp.83-90
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• 2024

This study investigates the 3D printing characteristics of strain hardening cement composites (SHCC) reinforced by PVA fibers. Three SHCC mixtures with diverse fiber volume fractions (1.0% for F1.0 mixture, 1.5% for F1.5 mixture, and 1.8% for F1.8 mixture) were designed. Except for the F1.0 mixture, all mixtures met the necessary conditions for multiple micro-cracking, with higher fiber volume fractions more readily satisfying these conditions. The flow values of three SHCC mixtures were within the 3D printable range of 120~160 mm, exhibiting decreased flow values with increasing the fiber volume fractions. Observation of the printed SHCC surfaces indicated that the F1.0 mixture had a Level-3 (good) rating, while F1.5 and F1.8 were rated as Level-2 (average). Higher fiber volume fractions resulted in poorer surface quality, thus, further research needs to be performed for modulating SHCC mixture suitable for 3D printing. The uniaxial tension behavior showed that the F1.0 mixture failed at lower strain, whereas F1.5 and F1.8 exhibited higher strain performance with multiple micro-cracks occurring.

• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.14 no.6
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• pp.470-477
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• 2004

This study shows the design process of a MR damper for semi-active suspension systems. Damping force characteristics of the designed damper was predicted through the flow analysis and magnetic analysis. The predicted results were compared with the experimental results and the initial design specification was modified according to the results.

• Journal of IKEEE
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• v.2 no.1 s.2
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• pp.34-41
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• 1998

An integrated circuit for magnetic stripe storage system is implemented. All the analog and digital circuits are integrated in one chip. The analog block contains preamplifier, peak detecter, comparator and reference generater. And digital block includes reference window signal generater, up/down counter for F/2F signal measurement, bit-error detection logic, and control logic. Both the encoding and decoding functions for F/2F signal processing are provided. An AGC(automatic gain control) circuit which was included in conventional circuits is eliminated due to optimized circuit design. Misreading prevention circuits are also proposed by fixing up new reference bit when broken bits are detected. The prototype chip is implemented using $0.8{\mu}m$ N-well CMOS technology and operates from 3.3 V to 7.5 V of supply voltage. It occupies a die area of $3.04mm^2(1.6mm{\times}1.9mm)$ and dissipates 8 mW with a 5 V supply voltage.

• Applied Chemistry for Engineering
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• v.27 no.5
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• pp.467-471
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• 2016

New electron deficient moiety, 6,7-difluoro-2,3-dihexylquinoxaline, was developed for the push-pull type copolymer for organic photovoltaics (OPVs). The PFDTQxF with lower HOMO energy level was synthesized using fluorene and 6,7-difluoro- 2,3-dihexylquinoxaline by Suzuki polymerization. The PFDTQxF thin film shows two absorption peaks at 368 and 493 nm. The HOMO and LUMO energy levels of PFDTQxF are calculated -5.55 and -3.91 eV, respectively. The device comprising PFDTQxF showed a $V_{OC}$ value of 0.47 V, a $J_{SC}$ value of $4.48mA/cm^2$, and a FF of 0.32, which yielded PCE of 0.78%, under the illumination of AM 1.5.