• Journal of the Korean Ceramic Society
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• v.36 no.12
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• pp.1350-1355
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• 1999

Sintering characteristics and dielectric properties of low temperature sinterable Glass/Ceramic dielectric materials were investigated. The dielectric materials which were developed for microwave frequency applications consist of SiO2-TiO2-Bi2O3-RO system(RO:BaO-CaO-SrO) crystallizable glass and Al2O3 as a ceramic filler. Sintering experiments showed that no more densification occurred above 80$0^{\circ}C$ and bulk density and shrinkage depended on Al2O3 content only. Results of dielectric measurements showed that $\varepsilon$r Q$\times$f and $\tau$f of the material containing 30wt% Al2O3 were 17.3, 600 and +23 ppm respectively. Those values for 45 and 60wt% Al2O3 samples were 11.6, 1400, +0.7 ppm and 7.2, 2000, -8.5 ppm, repectively. The results clearly showed that the Glas/Ceramic materials of present experiment decreased in $\varepsilon$r and increased in $\times$f value and changed from positive to negative value in $\tau$f value with the increasement of Al2O3 content.

• Journal of the Korean Ceramic Society
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• v.31 no.6
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• pp.685-693
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• 1994

Sublimation vapour pressures and sublimation enthalpy of anhydrous bismuth trifluoride have been measured by the continuous gravimetric Cnudsen-effusion method from 639-7 to 782.8 K. Additional effusion measurements have also been made from 750.6 to 863.1 K by the torsion-effusion method. Based on a correlation of subHo298.15 and subSo298.15, a recommended P(T) equation has been obtained for BiF3(s); logP= -C/T+5.2375logT-3.205$\times$10-3+4.661$\times$104/T2+1.348 where P is in Pa, T in Kelvin, subHo298.15 in kJ mol-1 and C=( subHo298.15-13.5149)/1.9146$\times$10-2. Condensation coefficients and their temperature dependence have been derived from the effusion measurements.

• Journal of the Microelectronics and Packaging Society
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• v.26 no.4
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• pp.163-169
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• 2019

Sn-Pb solder alloys in electronics rapidly has been replaced to Pb free solder alloys because of various environmental regulations such as restriction of hazardous substances directive (RoHS), European Union waste electrical, waste electrical and electronic equipment (WEEE), registration evaluation authorization and of chemicals (REACH) etc. Because Sn58%Bi (in wt.%) solder alloy has low melting point and higher mechanical properties than that of Sn-Pb solder, it has been studied to manufacture electronic components. However, the reliability of Sn58%Bi solder could be lowered because of the brittleness of Bi element included in the solder alloy. Therefore, we observed the microstructures of Sn58%Bi composite solders with various contents of Sn-decorated multiwalled carbon nanotube (Sn-MWCNT) particles and evaluated bonding strength of the FR-4 components assembled with Sn58%Bi composite solder. Also, microstructures and bonding strengths of the Sn58%Bi composite solder joints were evaluated with the number of reflows from 1 to 7 times, respectively. Bonding strengths and fracture energies of the Sn58%Bi composite solder joints were measured by die shear test. Microstructures and fracture modes were observed with scanning electron microscope (SEM). Microstructures in the Sn58%Bi composite solder joints were finer than that of only Sn58%Bi solder joint. Bonding strength and fracture energy of Sn58%Bi composite solder including 0.1 wt.% of Sn-decorated MWCNT particles increased up to 20.4% and 15.4% at 5 times in reflow, respectively.

• Journal of the Semiconductor & Display Technology
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• v.6 no.2 s.19
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• pp.19-23
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• 2007

The blue emitting OLEDs using TMP-BiP[(4'-Benzoylferphenyl-4-yl)phenyl-methanone-Diethyl(biphenyl-4-ymethyl) phosphonate] host and DJNBD-1 dopant have been fabricated and characterized. In the device fabrication, 2-TNATA [4,4',4"-tris(2-naphthylphenyl-phenylamino)-triphenylamine] as a hole injection material and NPB [N,N'-bis(1-naphthyl)N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine] as a hole transport material were deposited on the ITO(indium tin oxide)/glass substrate by vacuum thermal evaporation method. Followed by the deposition, blue color emission layer was deposited using TMP-BiP as a host material and DJNBD-1 as a dopant. Finally, small molecule OLEDs with structure of $ITO/2-TNATA/NPB/TMP-BiP:DJNBD-l/Alq_3/LiF/Al$ were obtained by in-situ deposition of $Alq_3$, LiF and Al as the electron transport material, electron injection material and cathode, respectively. The effect of dopant into host material of the blue OLEDs was studied. The blue OLEDs with DJNBD-1 dopant showed that the maximum current and luminance were found to be about 34 mA and $8110\;cd/m^2$ at 11 V, respectively. In addition, the color coordinate was x=0.17, y=0.17 in CIE color chart, and the peak emission wavelength was 440 nm. The maximum current efficiency of 2.15 cd/A at 7 V was obtained in this experiment.

• ETRI Journal
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• v.35 no.1
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• pp.51-57
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• 2013

In this paper, a small internal antenna for a mobile handset is presented using multiband, wideband, and high-isolation multiple-input multiple-output techniques. The proposed antenna consists of three planar inverted-F antennas (PIFAs) that operate in the global system for mobile communication (GSM900), the digital communication system (DCS), the personal communication system (PCS), the universal mobile telecommunication system (UMTS), and wireless local area network (WLAN) bands with a physical size of $40mm{\times}10mm{\times}10mm$. A resonator attached to the folded PIFA creates dual resonances, achieving a wide bandwidth of approximately 460 MHz, covering the DCS, PCS, and UMTS bands; a meander shorting line is used to improve impedance matching. Additionally, a modified neutralization link is embedded between diversity antennas to enhance isolation, which results in a 6-dB improvement in the isolation and less than 0.1 in the envelope correlation coefficient evaluated from the far-field radiation patterns. Simulation and measurements demonstrate very similar results for S-parameters and radiation patterns. Peak gains show 3.73 dBi, 3.77 dBi, 3.28 dBi, 2.15 dBi, and 5.86 dBi, and antenna efficiencies show 56.15%, 72.15%, 68.59%, 52.92%, and 82.93% for GSM900, DCS, PCS, UMTS, and WLAN bands, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.4
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• pp.298-303
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• 2003

Bi$_4$-$_{x}$EU$_{x}$Ti$_3$O$_{12}$ (BET) thin films were etched by inductively coupled CF$_4$/Ar plasma. We obtained the maximum etch rate of 78 nm/min at the gas mixing ratio of CF$_4$(10%)/Ar(90%). The variation of volume density for F and Ar atoms are measured by the optical emission spectroscopy. As CF$_4$increased in CF$_4$/Ar plasma, the emission intensities of F increase, but Ar atoms decrease, which confirms our suggestion that emission intensity is proportional to the volume density of atoms. From X-ray photoelectron spectroscopy, the intensities of the Bi-O, the Eu-O and the Ti-O peaks are changed. By pure Ar plasma, intensity peak of the oxygen-metal (O-M : TiO$_2$, Bi$_2$O$_3$, Eu$_2$O$_3$) bond was seemed to disappear while the intensity of pure oxygen peak showed an opposite tendency. After the BET thin films was etched by CF$_4$/Ar plasma, the peak intensity of O-M bond increase slowly, but more quickly than that of peak belonged to pure oxygen atoms due to the decrease of Ar ion bombardment. Scanning electron microscopy was used to investigate etching Profile. The Profile of etched BET thin film was over 85$^{\circ}$./TEX>.

• Journal of Korea Foundry Society
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• v.20 no.1
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• pp.3-12
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• 2000

The lead content of drinking water has been restricted to less than 15 ppb by Environmental Protection Agency (EPA) in USA. This has led to extensive research and development work at the Materials Technology Laboratory (MTL) of CANMET, a Canadian Government research laboratory, on the development of low-lead and lead-free copper alloys for plumbing applications. Attentionhas also been focused on the environmentally friendly and energy efficient permanent mold casting process to minimize the disposal of foundry sand contaminated by lead due to the use of leaded alloys in the non-ferrous foundries. A new series of alloys called SeBiLOY contaning Bi and Se been introduced to replace lead in the leaded alloys. This paper addresses some important casting characteristics such as fluidity, hot tear resistance, mechanical properties and microstructure of lead-free alloys such as SeBiLOY III and low-lead alloys such as silicon brass, silicon bronze and yellow brass in gravity permanent mold casting.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.439-442
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• 2004

The effects of sintering additives on the low-temperature sintering and microwave dielectric properties of $Mg_4Nb_2O_9$ dielectric ceramics were studied. When $3{\sim}20wt%$ of $0.242Bi_2O_3-0.758V_2O_5$ was added, the sintering temperature decreased from $1100{\sim}1300^{\circ}C$ to $950^{\circ}C$ and high density was obtained. When $Mg_4Nb_2O_9$ was sintered at $950^{\circ}C$ with 10wt% of sintering additive, the microwave dielectric properties of $Q{\times}f_0\;=\;80.035GHz,\;\epsilon_r\;=\;13.3\;and\;\tau_f\;=\;-12.9\;ppm/^{\circ}C$ were obtained.

• Economic and Environmental Geology
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• v.31 no.4
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• pp.277-290
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• 1998

The purpose of this research is to investigate the dispersion pattern of gold during skarnization and genesis of gold mineralization in the Sangdong skarn deposits. The Sangdong scheelite orebodies are embedded in the Cambrian Pungchon Limestone and limestone interbedded in the Myobong Slate of the Cambrian age. The tungsten deposits are classified as the Hangingwall Orebody, the Main Orebody and the Footwall Orebody as their stratigraphic locations. Recently, the Sangdong granite of the Cretaceous age (85 Ma) were found by underground exploratory drillings below the orebodies. In geochemisty, the W, Mo, Bi and F concentrations in the granite are significantly higher than those in the Cretaceous granitoids in southern Korea. Highest gold contents are associated with quartz-hornblende skarn in the Main Orebody and pyroxene-hornblende skarn in the Hangingwall Orebody. Also Au contents are closely related to Bi contents. This could be inferred that Au skarns formed from solutions under reduced environment at a temperature of $270^{\circ}C$. According to the multiple regression analysis, the variation of Au contents in the Main Orebody can be explained (87.5%) by Ag, As, Bi, Sb, Pb, Cu. Judging from the mineralogical, chemical and isotope studies, the genetic model of the deposits can be suggested as follows. The primitive Sangdong magma was enriched in W, Mo, Au, Bi and volatiles (metal-carriers such as $H_2O$, $CO_2$ and F). During the upward movement of hydrothermal ore solution, the temperature was decreased, and W deposits were formed at limestone (in the Myobong Slate and Pungchon Limestone). In addition, meteoric water influx gave rise to the retrogressive alterations and maximum solubility of gold, and consequently higher grade of Au mineralization was deposited.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.1
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• pp.19-24
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• 2007

The effects of $B_2O_3-SiO_2-R(R;CaO,\;BaO,\;ZnO,\;Bi_2O_3)$ borosilicate glass system on the sintering behavior and microwave dielectric properties of ceramic/glass composites were investigated as functions of modifier, glass addition ($30{\sim}50\;vol%$) and sintering temperature ($500{\sim}900^{\circ}C$ for 2 hrs). The addition of 50 and 45 vol% glass ensured successful sintering below $900^{\circ}C$. Sintering characteristics of the composites were well described in terms of modifier. Borosilicate glass enhanced the reaction with $Al_{2}O_{3}$ to form pores, second phases and liquid phases, which was responsible to component of modifier. Dielectric constant (${\varepsilon}_{r},\;Q{\times}f_{o}$) and temperature coefficient of resonant frequency (${\tau}_{f}$) of the composite with 50 and 45 vol% glass contents($B_{2}O_{3}:SiO_{2}:R=25:10:65$) demonstrated A-CaBS(7.8, 2,560 GHz, -81ppm/$^{\circ}C$), A-BaBs(5.8, 3.130 GHz, -64 ppm/$^{\circ}C$), A-ZnBS(5.7, 17,800 GHz, -21 ppm/$^{\circ}C$), A-BiBs(45 vol% glass in total)(8.3, 2,700 GHz, -45 ppm/$^{\circ}C$) which is applicable to substrate requiring an low dielectric properties.