• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.350-353
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• 2002

The microwave dielectric properties and the microstructures on $Bi_{0.97}Nb_{0.03}O_{4}$doped with $V_{2}O_{5}$ were systematically investigated. $Bi_{0.97}Tm_{0.03}Nb_{0.03}O_{4}$ ceramics sintered at $920-960^{\circ}C$were mainly consisted of orthorhombic and triclinic phases after addition of $V_{2}O_{5}$. The apparent density increased slightly with increasing the $V_{2}O_{5}$ addition. The dielectric $constants(\varepsilon_r)$ also increased with $V_{2}O_{5}$ addition(30-45). The $Q{\times}f_0$ values measured on $Bi_{0.97}Tm_{0.03}NbO_4$ ceramics doped with $V_{2}O_{5}$ were between 2,000 and 12,000[GHz] when the sintering temperatures are in the range of $920-960[^{\circ}C]$. It was confirmed the temperature coefficient of the resonant $frequency(\tau_f)$ can be adjusted from a positive value of $+10[ppm/^{\circ}C]$ to a negative value of $-15ppm/^{\circ}C$ by increasing the amount of $V_{2}O_{5}$. Based on our experimental results, the Bi0.97Tm0.03NbO4(added V2O5) ceramics can be applied to multilayer microwave devices at low sintering temperatures.

• Progress in Medical Physics
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• v.29 no.4
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• pp.101-105
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• 2018

In this paper, a neutron moderation system for boron neutron capture therapy (BNCT) based on a $^{252}Cf$ neutron source is proposed. Different materials have been studied in order to produce a high percentage of epithermal neutrons. A moderator with a construction mixture of $AlF_3$ and Al, three reflectors of $Al_2O_3$, BeO, graphite, and seven filters (Bi, Cu, Fe, Pb, Ti, a two-layer filter of Ti+Bi, and a two-layer filter of Ti+Pb) is considered. The MCNPX simulation code has been used to calculate the neutron and gamma flux at the output window of the neutronic system. The results show that the epithermal neutron flux is relatively high for four filters: Ti+Pb, Ti+Bi, Bi, and Ti. However, a layer of Ti cannot reduce the contribution of ${\gamma}$-rays at the output window. Although the neutron spectra filtered by the Ti+Bi and Ti+Pb overlap, a large fraction of neutrons (74.95%) has epithermal energy when the Ti+Pb is used as a filter. However, the percentages of the fast and thermal neutrons are 25% and 0.5%, respectively. The Bi layer provides a relatively low epithermal neutron flux. Moreover, an assembly configuration of 30% $AlF_3+70%$ Al moderator/$Al_2O_3$ reflector/a two-layer filter of Ti+Pb reduces the fast neutron flux at the output port much more than other assembly combinations. In comparison with a recent model suggested by Ghassoun et al., the proposed neutron moderation system provides a higher epithermal flux with a relatively low contamination of gamma rays.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.3
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• pp.208-213
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• 1998

Microwave dielectric properties of $BiNbO_4$ containing CuO and $V_2O_5$(BN ceramics). BN ceramic with 0.07wt% $V_2O_5$ and 0.03wt% CuO (BNC3V7) was sintered at $900^{\circ}C$ where it is possible for these to be co-fired with Ag electrode. The dielectric constant of 44.3, TCF (Temperature Coefficient of resonance Frequency) of 2 ppm/$^{\circ}$ and Q${\times}f_o$ value (product of Quality value and resonance Frequency) of 22,000GHz could be obtained from those ceramics. It is observed that orthorhombic structure was stable $1000^{\circ}C$. As sintering temperature increases, the dielectric properties decreased. The main reasons were abnormal grain growth and the main peak of triclinic moved from the main peak of orthorhombic.

• The Korean Journal of Ceramics
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• v.6 no.3
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• pp.276-279
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• 2000

Ferroelectric properties of $SrBi_2TaNbO_9$ (SBTN) thin films were changed by the amount of Bi content in SBTN. We suggested that the addition of excess Bi into the films could be accomplished by heat-treating $SBTN/Bi_2O_3/SBTN$ heterostructure fabricated by r.f. magnetron sputtering method. Excess Bi composition was controlled by the thickness of the sandwiched $Bi_2O_3$ from 0 to $400\;\AA$. When the SBTN thin films were inserted by $400\;{\AA}\;Bi_2O_3$ layer, $Bi_2Pt$ phase was formed as a second phase in SBTN films, resulting in poor ferroelectric properties. The onset temperature for hysteresis loop can be reduced by heat treating $SBTN/Bi_2O_3/SBTN$ heterostructure. The films with $SBTN/Bi_2O_3(100\;{\AA})/SBTN$ hetero-structure followed by annealing at $650^{\circ}C$ for 30 min show 2Pr and Ec of $5.66\;{\mu}C/\textrm{cm}^2$ and 54 kV/cm, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.200-201
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• 2007

The SBT($SrBi_2Ta_2O_9$) thin films with $Bi_2O_3$ buffer layer were deposited on Pt/Ti/$SiO_2$/Si substrate by R.F. magnetron sputtering method in order to improve the ferroelectric characteristics. In SBT thin films, the deficiency of bismuth during the process due to its volatility results in an obvious non stoichiometry of the films and the presence of secondary phases. $Bi_2O_3$ buffer layer was found to be effective to achieve the low temperature crystallization and improve the ferroelectric properties of SBT thin films. Ferroelectric properties and crystallinities of SBT thin films with various post annealing of $Bi_2O_3$ buffer layer were observed as various annealing temperature, using X-Ray Diffraction (XRD), scanning electron microscopy (SEM), Keithley 237 and HP 4192A Impedance Analyzer.

• Journal of Korea Society of Industrial Information Systems
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• v.12 no.4
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• pp.119-125
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• 2007

In this paper, a miniaturized PCB-integrated antenna is proposed for bluetooth applications. The proposed antenna is a modified form of the printed inverted F antenna where the size reduction is achieved by employing the meander strip for the resonant length part of the radiator. The antenna dimension is optimized using the commercial electromagnetic software MWSTM. The designed antenna is fabricated by the standard photo-etching technique and its performance is measured. The fabricated antenna shows a bandwidth of 125MHz centered at 2.45GHz and a gail of -0.23dBi. The size of the proposed antenna is $9.65mm{\times}5.95mm$ corresponding to the 55 percent of the area of the existing printed inverted F antenna.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.3
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• pp.183-187
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• 2000

In this study the SrBi$_2$Ta$_2$$O_{9}$ (SBT) thin films were etched by using magnetically enhanced inductively coupled Ar/CHF$_3$plasma as function of CHF$_3$/(Ar+CHF$_3$)gas mixing ratio. Maximum etch rate of SBT thin films was 1650 $\AA$/min and the selectivities of SBT to Pt and photoresist(PR) were 1.35 and 0.94 respectively under CHF$_3$/(Ar+CHF$_3$) of 0.1 For study on etching mechanism of SBT thin film X-ray photoelectron spectroscopy (XPS) surface analyses and secondary ion mass spectrometry (SIMS) mass analysis of etched SBT surfaces were performed. Among the elements of SBT thin film. M(Sr, Bi, Ta)-O bonds are broken by Ar ion bombardment and form SrF and TaF$_2$by chemical reaction with F. SrF and TaF$_2$are removed more easily by Ar ion bombardment. Scanning electron microscopy(SEM) was used for the profile examination of etched SBT film and the cross-sectional SEM profile of etched SBT film under CHF$_3$(Ar+CHF$_3$) of 0.1 was about 85$^{\circ}$X>.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.131-134
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• 2002

The effect of the addition on the densification, low temperature sintering, and microwave dielectric properties of the Ca[($Li_{1/3}Nb_{2/3}$)$_{1-x}$$Ti_{x}$]$O_{3-{\delta}}$/(CLNT) was investigated. $Bi_2O_3$ additives improved the dencification and reduced the sintering temperature from $1150^{\circ}C$ to $900^{\circ}C$ of CLNT microwave dielectric ceramics. As increasing $Bi_2O_3$ contents, the dielectric constants and bulk density were increased. The quality factor, however, was decreased slighty. The temperature coefficients of the resonant frequency shifted positive value as increasing $Bi_2O_3$ contents. The dielectric properties of Ca[($Li_{1/3}Nb_{2/3}$)$_{1-x}$$Ti_{x}$]$O_{3-{\delta}}$ and Ca[($Li_{1/3}Nb_{2/3}$)$_{0.8}Ti_{0.2}$]$O_{3-{\delta}}$ with 5wt% $Bi_2O_3$ sintered at $900^{\circ}C$ for 3h were $\varepsilon_{r}$=20, 35 Q.$f_{0}$=6500, 11,000 GHz, $\tau_{f}$=4, 13 ppm/$^{\circ}C$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.198-201
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• 1996

In order to investigate control factors to critical current density, Ag sheathed Bi2223 superconducting tapes were fabricated using PIT process. Optimizing the reduction ratio of rolling, critical current density 7f rolled Bi2223 tape could be improved with the value of 15,000 A/$\textrm{cm}^2$(77 K, zero field). The correlation between J$\_$c/ and work inhomogeneity was revealed as a dependence of COV of measured oxide layer thickness.

• Communications of the Korean Mathematical Society
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• v.37 no.2
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• pp.537-549
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• 2022

In this paper, we consider a convex univalent function f_α,β which maps the open unit disc 𝕌 onto the vertical strip domain Ω_α,β = {w ∈ ℂ : α < ℜ < (w) < β} and introduce new subclasses of both close-to-convex and bi-close-to-convex functions with respect to an odd starlike function associated with Ω_α,β. Also, we investigate the Fekete-Szegö type coefficient bounds for functions belonging to these classes.