• 제목/요약/키워드: Extreme ultraviolet

검색결과 78건 처리시간 0.034초

Single Exposure Imaging of Talbot Carpets and Resolution Characterization of Detectors for Micro- and Nano- Patterns

  • Kim, Hyun-su;Danylyuk, Serhiy;Brocklesby, William S.;Juschkin, Larissa
    • Journal of the Optical Society of Korea
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    • 제20권2호
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    • pp.245-250
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    • 2016
  • In this paper, we demonstrate a self-imaging technique that can visualize longitudinal interference patterns behind periodically-structured objects, which is often referred to as Talbot carpet. Talbot carpet is of great interest due to ever-decreasing scale of interference features. We demonstrate experimentally that Talbot carpets can be imaged in a single exposure configuration revealing a broad spectrum of multi-scale features. We have performed rigorous diffraction simulations for showing that Talbot carpet print can produce ever-decreasing structures down to limits set by mask feature sizes. This demonstrates that large-scale pattern masks may be used for direct printing of features with substantially smaller scales. This approach is also useful for characterization of image sensors and recording media.

Determination of Optical Constants of Thin Films in Extreme Ultraviolet Wavelength Region by an Indirect Optical Method

  • Kang, Hee Young;Lim, Jai Dong;Peranantham, Pazhanisami;HwangBo, Chang Kwon
    • Journal of the Optical Society of Korea
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    • 제17권1호
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    • pp.38-43
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    • 2013
  • In this study, we propose a simple and indirect method to determine the optical constants of Mo and ITO thin films in the extreme ultraviolet (EUV) wavelength region by using X-ray reflectometry (XRR) and Rutherford backscattering spectrometry (RBS). Mo and ITO films were deposited on silicon substrates by using an RF magnetron sputtering method. The density and the composition of the deposited films were evaluated from the XRR and RBS analysis, respectively and then the optical constants of the Mo and ITO films were determined by an indirect optical method. The results suggest that the indirect method by using the XRR and RBS analysis will be useful to search for suitable high absorbing EUVL mask material quickly.

Gold-sapphire Plasmonic Nanostructures for Coherent Extreme-ultraviolet Pulse Generation

  • Han, Seunghwoi
    • Current Optics and Photonics
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    • 제6권6호
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    • pp.576-582
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    • 2022
  • Plasmonic high-order harmonic generation (HHG) is used in nanoscale optical applications because it can help in realizing a compact coherent ultrashort pulse generator on the nanoscale, using plasmonic field enhancement. The plasmonic amplification of nanostructures induces nonlinear optical phenomena such as second-order harmonic generation, third-order harmonic generation, frequency mixing, and HHG. This amplification also causes damage to the structure itself. In this study, the plasmonic amplification according to the design of a metal-coated sapphire conical structure is theoretically calculated, and we analyze the effects of this optical amplification on HHG and damage to the sample.

극자외선 리소그라피에서의 Sub-resolution assist feature를 이용한 근접효과보정 (Optical Proximity Correction using Sub-resolution Assist Feature in Extreme Ultraviolet Lithography)

  • 김정식;홍성철;장용주;안진호
    • 반도체디스플레이기술학회지
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    • 제15권3호
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    • pp.1-5
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    • 2016
  • In order to apply sub-resolution assist feature (SRAF) in extreme ultraviolet lithography, the maximum non-printing SRAF width and lithography process margin needs to be improved. Through simulation, we confirmed that the maximum SRAF width of 6% attenuated phase shift mask (PSM) is large compared to conventional binary intensity mask. The increase in SRAF width is due to dark region's reflectivity of PSM which consequently improves the process window. Furthermore, the critical dimension error caused by variation of SRAF width and center position is reduced by lower change in diffraction amplitude. Therefore, we speculate that the margin of SRAF application will be improved by using PSM.

Extreme Ultraviolet Plasma and its Emission Characteristics Generated from the Plasma Focus in Accordance with Gas Pressure for Biological Applications

  • Kim, Jin Han;Lee, Jin Young;Kim, Sung Hee;Choi, Eun Ha
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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    • pp.178.2-178.2
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    • 2013
  • Conventional ultraviolets A,B,C are known to be very important factor of killing, changing surface properties of biological cells and materials. It is of great importance to investigate the influence of extreme ultraviolet (EUV) exposure on the biological cell. Here we have studied high density EUV plasma and its emission characteristics, which have been generated by plasma focus device with hypercycloidal pinch (HCP) electrode under various Ar gas pressures ranged from 30~500 mTorr in this experiment. We have also measured the plasma characteristics generated from the HCP plasma focus device such as electron temperature by the Boltzman plot, plasma density by the Stark broading method, discharge images by open-shuttered pin hole camera, and EUV emission signals by using the photodiode AXUV-100 Zr/C.

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초기형 별 방향 성간운의 CO 와 H2 비율 계산 (CO TO H2 RATIO OF INTERSTELLAR MOLECULAR CLOUDS IN THE DIRECTIONS OF EARLY TYPE STARS)

  • 박재우;이대희;민경욱
    • Journal of Astronomy and Space Sciences
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    • 제21권4호
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    • pp.243-248
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    • 2004
  • FUSE(Far Ultraviolet Spectroscopic Explorer)를 이용해 7개의 초기형 별 방향에 존재하는 CO 흡수선을 관측했다. BEFS(Berkeley Extreme and Far-ultraviolet Spectrometer)로 관측한 54개의 초기형 별들 중에서 이번 논문에서는 시선방향으로 1개의 성간운만 존재하는 7개의 별(HD 37903, HD 97991, HD 149881, HD 156110, HD 164794, HD 214080, HD 219188)들을 선택해서 분석했다. CO 분자의 분석을 위해 자외선 영역에서 수소분자의 흡수선에 의해 가려지지 않는 E-X(0-0)($1076{\AA}$) 흡수선이 있는지 확인했으며 그 결과 3개의 별 방향에 존재하는 성간운에 대해서 CO 흡수선이 있는 것을 발견했다. 그 흡수선의 분석을 통해 성간운에 존재하는 CO의 기둥밀도를 구했고, 이번 논문에서의 결과와 이전에 구했던 수소분자의 기둥밀도로부터 CO분자와 수소분자 사이의 비율(CO to $H_2$ ratio)을 계산할 수 있었다.

Influence of Ne-Xe Gas Mixture Ratio on the Extreme Ultraviolet (EUV) Emission Measurement from the Coaxially Focused Plasma

  • Lee, Sung-Hee;Hong, Young-June;Choi, Duk-In;Uhm, Han-Sup;Choi, Eun-Ha
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
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    • pp.220-220
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    • 2011
  • The Ne-Xe plasmas in dense plasma-focus device with coaxial electrodes were generated for extreme ultraviolet (EUV) lithography. The influence of gas mixture ratio, Ne-Xe (1, 10, 15, 20, 25, 30, 50%) mixture gas, on EUV emission measurement, EUV intensity and electron temperature in the coaxially focused plasma were investigated. An input voltage of 4.5 kV was applied to the capacitor bank of 1.53mF and the diode chamber was filled with Ne-Xe mixture gas at a prescribed pressure. The inner surface of the cylindrical cathode was lined by an acetal insulator. The anode was made of tin metal. The EUV emission signal of the wavelength in the range of 6~16 nm has been detected by a photo-detector (AXUV-100 Zr/C, IRD). The visible emission line was also detected by the composite-grating spectrometer of the working wavelength range of 200~1100 nm (HR 4000CG). The electron temperature is obtained by the optical emission spectroscopy (OES) and measured by the Boltzmann plot with the assumption of local thermodynamic equilibrium (LTE).

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