• Journal of the Semiconductor & Display Technology
• /
• v.22 no.4
• /
• pp.108-112
• /
• 2023

Precision manufacturing technology is rapidly developing due to the extreme miniaturization of semiconductor processes to comply with Moore's Law. Accurate and precise alignment, which is one of the key elements of the semiconductor pre-process and post-process, is very important in the semiconductor process. The center detection of wafer align marks plays a key role in improving yield by reducing defects and research on accurate detection methods for this is necessary. Methods for accurate alignment using traditional image sensors can cause problems due to changes in image brightness and noise. To solve this problem, engineers must go directly into the line and perform maintenance work. This paper emphasizes that the development of AI technology can provide innovative solutions in the semiconductor process as high-resolution image and image processing technology also develops. This study proposes a new wafer center detection method through variable thresholding. And this study introduces a method for detecting the center that is less sensitive to the brightness of LEDs by utilizing a high-performance object detection model such as YOLOv8 without relying on existing algorithms. Through this, we aim to enable precise wafer focus detection using artificial intelligence.

• Journal of the Korean Society of Manufacturing Technology Engineers
• /
• v.26 no.3
• /
• pp.285-291
• /
• 2017

Micro-needles are used as transferring devices for sampling of tiny constitute substances from biological bodies. Typically, nickel is used as a coating to improve the rigidity of micro-needles. This study introduces the methodology to manufacture a WC needle with very high hardness and toughness. Micro-EDM technology was used to manufacture micro-needles with holes $130{\mu}m$ in diameter and $2300{\mu}m$ in length. A micro-needle was aligned to the micro-EDM electrode using a custom two degree-of-freedom alignment system. A three-step manufacturing technique was developed to drill a micro-hole using a WC electrode. In the first process, an electrode $105{\mu}m$ in diameter was used to make a hole. Electrodes of 90 and $105{\mu}m$ diameters were used in the second and third process, respectively. Consequently, a WC micro-needle with an inner hole of $135{\mu}m$ diameter, length of $2300{\mu}m$, and outer diameter of $300{\mu}m$ was developed.

• Journal of Environmental Health Sciences
• /
• v.32 no.5 s.92
• /
• pp.446-450
• /
• 2006

In order to treat the wastewater containing organic compound, pre-treatment system connected with MSP(molecular separation process) was investigated. With the aim of selecting an optimum process of Fenton's oxidation, removal efficiency of each process in the optimum reaction condition was recommended. The $Fe/H_{2}O_{2}$(ferric sulfate to hydrogen peroxide)reagent is referred to as the Fenton's regent, which produces hydroxyl radicals by the interaction of Fe with $H_{2}O_{2}$. The powerful oxidizing ability and extreme kinetic reactively of the hydroxyl radical was well established. Increasing dosage of $Fe/H_{2}O_{2}$ increased removal efficiency as molar ratio of $Fe/H_{2}O_{2}$ between 0.2 and 2.5. Optimum dosage of molar ratio was 1. The removal efficiency for reaction condition was increased as pH decreased when the molar ratio of $Fe/H_{2}O_{2}$ was 1.7. Fenton's oxidation was most efficient in the reaction time 35 min for complex wastewater. Also, coagulation aid experiments using kaolin resulted in 3% of kaolin dosage.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.124-124
• /
• 2010

Currently, extreme ultraviolet lithography (EUVL) is being investigated for next generation lithography. EUVL is one of competitive lithographic technologies for sub-22nm fabrication of nano-scale Si devices that can possibly replace the conventional photolithography used to make today's microcircuits. Among the core EUVL technologies, mask fabrication is of considerable importance due to the use of new reflective optics having a completely different configuration compared to those of conventional photolithography. Therefore, new materials and new mask fabrication process are required for high performance EUVL mask fabrication. This study investigated the etching properties of SnO2 (Tin Oxide) as a new absorber material for EUVL binary mask. The EUVL mask structure used for etching is SnO2 (absorber layer) / Ru (capping / etch stop layer) / Mo-Si multilayer (reflective layer) / Si (substrate). Since the Ru etch stop layer should not be etched, infinitely high selectivity of SnO2 layer to Ru ESL is required. To obtain infinitely high etch selectivity and very low LER (line edge roughness) values, etch parameters of gas flow ratio, top electrode power, dc self - bias voltage (Vdc), and etch time were varied in inductively coupled Cl2/Ar plasmas. For certain process window, infinitely high etch selectivity of SnO2 to Ru ESL could be obtained by optimizing the process parameters. Etch characteristics were measured by on scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) analyses. Detailed mechanisms for ultra-high etch selectivity will be discussed.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.132-132
• /
• 2010

In the nano-scale Si processing, patterning processes based on multilevel resist structures becoming more critical due to continuously decreasing resist thickness and feature size. In particular, highly selective etching of the first dielectric layer with resist patterns are great importance. In this work, process window for the infinitely high etch selectivity of silicon oxynitride (SiON) layers and silicon nitride (Si3N4) with EUV resist was investigated during etching of SiON/EUV resist and Si3N4/EUV resist in a CH2F2/N2/Ar dual-frequency superimposed capacitive coupled plasma (DFS-CCP) by varying the process parameters, such as the CH2F2 and N2 flow ratio and low-frequency source power (PLF). It was found that the CH2F2/N2 flow ratio was found to play a critical role in determining the process window for ultra high etch selectivity, due to the differences in change of the degree of polymerization on SiON, Si3N4, and EUV resist. Control of N2 flow ratio gave the possibility of obtaining the ultra high etch selectivity by keeping the steady-state hydrofluorocarbon layer thickness thin on the SiON and Si3N4 surface due to effective formation of HCN etch by-products and, in turn, in continuous SiON and Si3N4 etching, while the hydrofluorocarbon layer is deposited on the EUV resist surface.

• Journal of Korean Academy of Nursing
• /
• v.37 no.5
• /
• pp.724-735
• /
• 2007

Purpose: The purpose of this study was to explore and describe the experiences of the family caregivers using a nursing home for their elderly family members. Method: Participants for this study were 1 man and 9 women caregivers. Data was collected through in-depth interviews from October, 2005 to April, 2006 and analyzed using Strauss and Corbin's grounded theory methodology. Results: "Finding a way to live together" emerged as a core category and it reflected expanding consciousness allowing them to see each other in a more positive view. The basic social process of "finding a way to live together" includes 3 phases: 1) recognizing the problems, 2) finding solutions to the problems, and 3) accepting the changes in their surrounding. Lack of privacy, family troubles, extreme distress, and unavailable caregivers are reflected in the process of recognizing the problems. The process of finding solutions was making a decision, obtaining family agreement, choosing the best nursing home, and enduring the financial burden. Possible outcomes of the last phase include recovering peace of mind and continuing conflict. Conclusion: Findings from this study offer suggestions for developing a strategy to help not only the elderly but also the family caregivers.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.29 no.12
• /
• pp.750-758
• /
• 2016

For the channel doping of shallow junction and retrograde well formation in CMOS, indium can be implanted in silicon. The retrograde doping profiles can serve the needs of channel engineering in deep MOS devices for punch-through suppression and threshold voltage control. Indium is heavier element than B, $BF_2$ and Ga ions. It also has low coefficient of diffusion at high temperatures. Indium ions can be cause the erode of wafer surface during the implantation process due to sputtering. For the ultra shallow junction, indium ions can be implanted for p-doping in silicon. UT-MARLOWE and SRIM as Monte carlo ion-implant models have been developed for indium implantation into single crystal and amorphous silicon, respectively. An analytical tool was used to carry out for the annealing process from the extracted simulation data. For the 1D (one-dimensional) and 2D (two-dimensional) diffused profiles, the analytical model is also developed a simulation program with $C^{{+}{+}}$ code. It is very useful to simulate the indium profiles in implanted and annealed silicon autonomously. The fundamental ion-solid interactions and sputtering effects of ion implantation are discussed and explained using SRIM and T-dyn programs. The exact control of indium doping profiles can be suggested as a future technology for the extreme shallow junction in the fabrication process of integrated circuits.

• Transactions on Electrical and Electronic Materials
• /
• v.3 no.3
• /
• pp.8-13
• /
• 2002

Controlled precipitation of quasi-binary semiconductor system is newly proposed as an effective and reliable technique for the formation of well-defined and crystallographically aligned semiconductor nanostructures. Using HgTe-PbTe quasi-binary semiconductor system, self-aligned HgTe nanocrystallites distributed three dimensionally within PbTe matrix were successfully formed by the simple three step heat treatment process routinely found in age hardening process of metallic alloys. Examination of the resulting nano precipitates using conventional transmission electron microscopy (CTEM) and high resolution TEM (HRTEM) reveals that the coherent HgTe precipitates form as thin discs along the (100) habit planes making a crystallographic relation of {100}$\_$HgTe///{100}$\_$PbTe/ and [100]$\_$HgTe///[100]$\_$PbTe/. It is also found that the precipitate undergoes a gradual thickening and a faceting under isothermal aging up to 500 hours without any noticeable coarsening. These results, combined with the extreme dimension of the precipitates (4-5 nm in length and sub-nanometer in thickness) and the simplicity of the formation process, leads to the conclusion that controlled precipitation is an effective method for preparing desirable quantum-dot nanostructures.

• Journal of the Korea Management Engineers Society
• /
• v.23 no.4
• /
• pp.73-86
• /
• 2018

Most electric products produced during the manufacturing process are produced after design and mass production under a given control standard. In particular, the development phase should present the criteria for the production process by setting appropriate limits based on the performance being targeted. Even if the standard of performance is set considering the performance of the process, measuring the performance of the product after actual production results will cause nonconformities with the expected results. Among the performance of electrical products, Energy standards represented by energy consumption efficiency continue to be of importance, and are mandatory standards that correspond to national standards in most countries. Therefore, statistical quality control of these standards shall basically have a large number of test equipment for each product, ensure sufficient test time and continuous sampling of product samples. In the end, companies that produce and sell electric appliances are striving to control mass production at a great cost, but this is not acceptable. This study presents basic characteristics of the energy efficiency of electrical products and proposes and conducts a case study on statistical production control methods for performance variation across products under the standards about domestic and international regulations.

• Journal of Koreanology Reviews
• /
• v.1 no.1
• /
• pp.1-23
• /
• 2022

HunMinJeongEum, meaning "the right sound to teach the people," was created in 1443 CE by King Sejong the Great, the fourth king of the Joseon Dynasty. In today's modern language, this letter, called Hangeul, is internationally recognized for its linguistic science. However, it is hard to find a comprehensive study on the fact that King Sejong himself created Hangeul, the Confucian perspective on natural disasters and democracy revealed in the process of writing, the independent efforts emphasized from a certain period, and the achievements of King Sejong, who shared the sorrow of the people and carried out national policies despite the extreme opposition of the nobility. Accordingly, I analyzed the consonants of HunMinJeongEum and looked at the essence of humanity and oriental philosophy (Yin-Yang Five Elements, Sangsu Philosophy, Hado). Surprisingly, different meanings from previous studies and interpretations were found, and King Sejong's "Da Vinci Code," which was left behind in the process of making the consonant, is reinterpreted and revealed. King Sejong's achievements were all connected as one. This is the root of democracy in the Republic of Korea today, and this is why King Sejong was selected as the most beloved and respected historical figure by the Korean people. This study will start with more people's understanding of the fundamental perception and philosophy of the world in Asia, including Korea, to reinterpret and reveal the hardships and great achievements experienced by a leader of a country in the process of creating korean alphabet, and to emphasize democracy, which is an important value for Asians and Westerners' mutual respect and co-prosperity.