• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.4
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• pp.383-390
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• 2014

This paper presents an excitatory CMOS neuron oscillator circuit design, which can synchronize two neuron-bursting patterns. The excitatory CMOS neuron oscillator is composed of CMOS neurons and CMOS excitatory synapses. And the neurons and synapses are connected into a close loop. The CMOS neuron is based on the Hindmarsh-Rose (HR) neuron model and excitatory synapse is based on the chemical synapse model. In order to fabricate using a 0.18 um CMOS standard process technology with 1.8V compatible transistors, both time and amplitude scaling of HR neuron model is adopted. This full-chip integration minimizes the power consumption and circuit size, which is ideal for motion control unit of the proposed bio-mimetic micro-robot. The experimental results demonstrate that the proposed excitatory CMOS neuron oscillator performs the expected waveforms with scaled time and amplitude. The active silicon area of the fabricated chip is $1.1mm^2$ including I/O pads.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.855-858
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• 2001

The stress induced leakage currents of thin silicon oxides is investigated in the VLSI implementation of a self learning neural network integrated circuits using a linearity synapse transistor. The channel current for the thickness dependence of stress current, transient current, and stress induced leakage currents has been measured in oxides with thicknesses between 41 ${\AA}$, 86${\AA}$, which have the channel width ${\times}$ length 10 ${\times}$1${\mu}$m, 10 ${\times}$0.3${\mu}$m respectively. The stress induced leakage currents will affect data retention in synapse transistors and the stress current, transient current is used to estimate to fundamental limitations on oxide thicknesses. The synapse transistor made by thin silicon oxides has represented the neural states and the manipulation which gaves unipolar weights. The weight value of synapse transistor was caused by the bias conditions. Excitatory state and inhitory state according to weighted values affected the channel current. The stress induced leakage currents affected excitatory state and inhitory state.

• Proceedings of the IEEK Conference
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• 2007.07a
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• pp.475-476
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• 2007

The stress induced leakage currents will affect data retention in synapse transistors and the stress current, transient current is used to estimate to fundamental limitations on oxide thicknesses. The synapse transistor made by thin silicon oxides has represented the neural states and the manipulation which gaves unipolar weights. The weight value of synapse transistor was caused by the bias conditions. Excitatory state and inhibitory state according to weighted values affected the channel current. The stress induced leakage currents affected excitatory state and inhibitory state.

• Electrical & Electronic Materials
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• v.10 no.8
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• pp.783-793
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• 1997

A VLSI implementation of a self-learning neural network integrated circuits using a linearity synapse transistor is investigated. The thickness dependence of oxide current density stress current transient current and channel current has been measured in oxides with thicknesses between 41 and 112 $\AA$, which have the channel width $\times$ length 10 $\times$1${\mu}{\textrm}{m}$, 10 $\times$ 0.3${\mu}{\textrm}{m}$ respectively. The transient current will affect data retention in synapse transistors and the stress current is used to estimate to fundamental limitations on oxide thicknesses. The synapse transistor has represented the neural states and the manipulation which gaves unipolar weights. The weight value of synapse transistor was caused by the bias conditions. Excitatory state and inhitory state according to weighted values affected the drain source current.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.59-62
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• 2000

A VLSI implementation of a self-learning neural network integrated circuits using a linearity synapse transistor is investigated. The thickness dependence of oxide current density, stress current, transient current and channel current has been measured in oxides with thicknesses between 41 and 112 $\AA$, which have the channel width$\times$length 10$\times$1${\mu}{\textrm}{m}$ respectively. The transient current will affect data retention in synapse transistors and the stress current is used to estimate to fundamental limitations on oxide thicknesses. The synapse transistor has represented the neural states and the manipulation which gave unipolar weights. The weight value of synapse transistor was caused by the bias conditions. Excitatory state and inhitory state according to weighted values affected the drain source current.

• BMB Reports
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• v.49 no.9
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• pp.457-458
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• 2016

Recent studies have strongly implicated postsynaptic scaffolding proteins such as SAPAP3 or Shank3 in the pathogenesis of various mood disorders, including autism spectrum disorder, bipolar disorder (BD), and obsessive-compulsive disorders. Neural Abelson-related gene-binding protein 2 (nArgBP2) was originally identified as a protein that interacts with SAPAP3 and Shank3. Recent study shows that the genetic deletion of nArgBP2 in mice leads to manic/bipolar-like behavior resembling symptoms of BD. However, the function of nArgBP2 at synapse, or its connection with the synaptic dysfunctions, is completely unknown. This study provides compelling evidence that nArgBP2 regulates the spine morphogenesis through the activation of Rac1/WAVE/PAK/cofilin pathway, and that its ablation causes a robust and selective inhibition of excitatory synapse formation, by controlling actin dynamics. Our results revealed the underlying mechanism for the synaptic dysfunction caused by nArgBP2 downregulation that associates with analogous human BD. Moreover, since nArgBP2 interacts with key proteins involved in various neuropsychiatric disorders, our finding implies that nArgBP2 could function as a hub linking various etiological factors of different mood disorders.

• Proceedings of the IEEK Conference
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• summer
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• pp.209-212
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• 2004

In this paper, The stress induced leakage currents of thin silicon oxides is investigated in the nano scale structure implementation for Soc. The stress and transient currents associated with the on and off time of applied voltage were used to measure the distribution of high voltage stress induced traps in thin silicon oxide films. The stress and transient currents were due to the charging and discharging of traps generated by high stress voltage in the silicon oxides. The channel current for the thickness dependence of stress current, transient current, and stress induced leakage currents has been measured in oxides with thicknesses between $41\square\;and\;113.4\square,$ which have the channel width x length 10x1um, respectively. The stress induced leakage currents will affect data retention and the stress current, transient current is used to estimate to fundamental limitations on oxide thicknesses. The weight value of synapse transistor was caused by the bias conditions. Excitatory state and inhitory state according to weighted values affected the channel current. The stress induced leakage currents affected excitatory state and inhitory state.

• Proceedings of the IEEK Conference
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• 2003.11a
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• pp.103-106
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• 2003

An oscillatory neural network circuit has been designed and fabricated in an 0.5 ${\mu}{\textrm}{m}$ double poly CMOS technology. The proposed oscillatory neural network consists of 3 neural oscillator cells with excitatory synapses and a neural oscillator cell with inhibitory synapse. Simulations of a network of oscillators demonstrate cooperative computation. Measurements of the fabricated chip in condition of $\pm$ 2.5 V power supply is shown.

• BMB Reports
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• v.31 no.3
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• pp.264-268
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• 1998

Dopamine (DA) acts on swimming motor neurons (SMNs) of Polyorchis penicillatus as an inhibitory neurotransmitter by hyperpolarizing their membrane potentials, which results from the activation of voltagesensitive potassium channels mediated through a $D_2-type$ receptor. In addition, DA, and not the hyperpolarized membrane potential, directly decreased the input resistance of SMNs by ca. 50% from 1.42 to 0.68 $G{\Omega}$. It strongly indicates that DA can shunt other excitatory synaptic signals onto SMNs where DA usually elicited much greater responses in their neurites than soma. All these evidences suggest that DA may operate in this primitive nervous system in dual modes as an inhibitory neurotransmitter and neuromodulator as well.

• The Korean Journal of Physiology and Pharmacology
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• v.6 no.2
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• pp.113-119
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• 2002

Long-term potentiation (LTP) at hippocampal CA3-CA1 synapses is often associated with increases in quantal size, traditionally attributed to enhanced availability or efficacy of postsynaptic glutamate receptors. However, augmented quantal size might also reflect increases in neurotransmitter concentration within the synaptic cleft since AMPA-type glutamate receptors are not generally saturated during basal transmission. Here we report evidence that peak cleft glutamate concentration $([glu]_{cleft})$ increases during LTP, as indicated by a lessening of the blocking effects of rapidly unbinding antagonists of AMPA. The efficacy of slowly equilibrating antagonists remained unchanged. The elevated $[glu]_{cleft}$ helps support the increased quantal amplitude of AMPA-type EPSCs (excitatory postsynaptic currents) during LTP.