• Title/Summary/Keyword: Excitation temperature

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Structural properties and optical studies of two-dimensional electron gas in Al0.55Ga0.45/GaN heterostructures with low-temperature AlN interlayer (저온 성장 AlN 층이 삽입된 Al0.55Ga0.45N/AlN/GaN 이종접합 구조의 구조적 특성 및 이차원 전자가스의 광학적 특성)

  • Kwack, H.S.;Lee, K.S.;Kim, H.J.;Yoon, E.;Cho, Y.H.
    • Journal of the Korean Vacuum Society
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    • v.17 no.1
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    • pp.34-39
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    • 2008
  • We have investigated the characteristics of $Al_{0.55}Ga_{0.45}N$/GaN heterostructures with and without low-temperature (LT) AlN interlayer grown by metalorganic chemical vapor deposition. The structural and optical properties were systematically studied by Rutherford backscattering spectroscopy (RBS), X-ray diffraction (XRD), optical microscopy (OMS), scanning electron microscopy (SEM), and photoluminescence (PL). The Al content (x) of 55% and the structural properties of $Al_xGa_{1-x}N$/GaN heterostructures were investigated by using RBS and XRD, respectively. We carried out OMS and SEM experiments and obtained a decrease of the crack network in $Al_{0.55}Ga_{0.45}N$ layer with LT-AlN interlayer. A two-dimensional electron gas (2DEG)-related PL peak located at ${\sim}3.437eV$ was observed at 10 K for $Al_{0.55}Ga_{0.45}N$/GaN with LT-AlN interlayer. The 2DEG-related emission intensity gradually decreased with increasing temperature and disappeared at temperatures around 100 K. In addition, with increasing the excitation power above 3.0 mW, two 2DEG-related PL peaks were observed at ${\sim}3.411$ and ${\sim}3.437eV$. The observed lower-energy and higher-energy side 2DEG peaks were attributed to the transitions from the sub-band level and the Fermi energy level of 2DEG at the AlGaN/LT-AlN/GaN heterointerface, respectively.

A Comprehensive Study on the Forced Aging of Flue-cured Tobacco-Leaves (황색종 잎담배의 발효숙성 촉진에 관한 종합적 연구)

  • Bae, H.W.
    • Applied Biological Chemistry
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    • v.13 no.1
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    • pp.1-27
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    • 1970
  • The process of the forced aging of flue-cured tobacco leaves were studied extensively from various scientific points of view. The Flue-cured tobacco leaves were inoculated and fermented with nicotine resistant Hansenula yeast, or the leaves were subjected under simple forced aging. The above two processes of forced aging were studied from the summarized points of microbiology, physics, chemistry, and biochemistry, and the resulted products ware compared in their physical, chemical and biochemical quality determining factors with that of raw material tobacco leaves (dried-tobacco leaves) and 2 years aged high quality tobacco leaves. The summary results were as follows. 1) The Korean flue-cured tobacco leaves, were forcedly aged under the basic optimum aging condition, temperature $40^{\circ}C$, moisture contents 18%, relative humidity 74%. It was found that this aging condition was the best in bringing the quality of forcedly aged tobacco leaves to the utmost state. 2) Under this optimum temperature and moisture condition of forced aging in about 20 days the forcedly aged tobacco leaves both with yeast inoculation and without yeast inoculation showed the equivalent tobacco qualities comparable with that of more than 2 years aged tobacco leaves. 3) The forcedly aged tobacco leaves both with and without yeast inoculation under $40^{\circ}C$ temperature and $74^{\circ}C$ relative humidity achieved the necessary quality determining physical and chemical changes in about 20 days. 4) The microbial changes during the forced aging were as follows. The population of yeasts and bacteria increased until to 15 days of aging, then decreased thereafter. Whereas the molds grew continously until the end of fermentation. 5) The tobacco quality determing physico-chemico-properties of yeast inoculated aged and simple forcedly aged tobacco leaves, progressed as the follows in time. As the forced aging progresses, swelling and combustibility properties were improved. The pH, total reducing materials, total sugars, alkaloids contents decreased. The contents of organic and ether extractable materials increased. The total nitrogen, protein, crude fiber, ash contents showed no changes. The color properties, excitation purity, luminance, main wave length, showed equivalent changes comparable with that of 2 years aged tobacco leaves. 6) The changes in chemical components in yeast treated and simple forcedly aged tobacco leaves during $15{\sim}20{\;}days$ of forced aging were as follows. The following chemical components decreased as the aging. Sugars-sucrose. rhamnose, glucose. Pigments-chlorophyll, carotenes, xanthophyll and violax anthine. Polyphenols-rutin, chlorogenic and, coffeic acid. Organic acids-iso-butylic, crotonic, caprylic, galacturonic, tartaric, succinic, citric acid. Alkaloids-nicotine, nornicotine. The following components increased as the forced aging progressed. Sugars-frutose, maltose, raffinose. Amino acids-proline, cystine. Organic acids-formic, acetic, propionic, n-butyric, iso-valeric, n-valeric, malic, oxalic, malonic, ${\alpha}-ketoglutaric$, fumaric, glutaric acid. 7) During the forced aging of tobacco Leaves the oxygen-uptake decreased gradually. The enzyme activities of polyphenol oxidase, ${\beta}-amylase$ ${\alpha}-amylase$ decreased gradually. The activities of the enzymes, catalase, and invertase increased once then decreased at the later stage.

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A Study on Thermally Stimulated Luminescence and Exoelectron Emission Phenomena of MgO Single Crystals (MgO 단결정의 열자극 발광 및 Exo전자 방출 현상에 관한 연구)

  • Doo, Ha-Young;Sim, Sang-Hung;Kim, Hyun-Suk
    • Journal of Korean Ophthalmic Optics Society
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    • v.11 no.3
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    • pp.165-172
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    • 2006
  • On the MgO single crystals doped artificially with Cr, Cu, Fe we observed thermally stimulated luminescence(TSL) glow curves and spectra, and analyzed them in the temperatures range from at liquid nitrogen temperature(77K) to about 500K after excitation with UV or X-ray irradiation. TSL glow curves obtained from these samples show five peaks at 136.5K, 223.5K, 360K, 390K, 440K, and their estimated activation energies are 0.27eV, 0.63eV, 1.08eV, 1.08eV, 1.19eV, and 1.33eV, respectively. When we measured TSL spectrum at the range of 200nm to 650nm on the MgO single crystals. we also analyzed the peak wavelength which obtained at 345nm, 375nm, and 410nm from measurement of TSL spectrum and described their luminescence mechanisms. TSL spectrum peaks emitted from MgO:Cr, MgO:Cu, and MgO:Fe appear at the wavelengths of 345nm, 360nm, and 375nm, respectively.

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Synthesis and Luminescence Characteristics of SrGa2S4:Eu Green Phosphor for Light Emitting Diodes by Solid-State Method (고상법을 이용한 LED용 SrGa2S4:Eu 녹색 형광체의 합성 및 발광특성)

  • Kim, Jae-Myung;Kim, Kyung-Nam;Park, Joung-Kyu;Kim, Chang-Hae;Jang, Ho-Gyeom
    • Journal of the Korean Chemical Society
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    • v.48 no.4
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    • pp.371-378
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    • 2004
  • The $SrGa_2S_4:Eu^{2+}$ green emitting phosphor has been studied as a luminous device for CRT (Cathode Ray Tube) or FED (Field Emission Display) and EL (Electroluminescence). This phosphor, also, is under noticed for LED (Lighting Emitting Diode) phosphor, which makes use of excitation characteristics of long wavelength region. The $SrGa_2S_4:Eu^{2+}$ phosphor was prepared generally conventional synthesis method using flux. However, this method needs high heat-treated temperature, long reaction time, complex process and harmful $H_2S$or $CS_2$ gas. In this works, therefore, we have synthesized $SrGa_2S_4:Eu^{2+}$ using SrS, $Ga_2S_3$, and EuS as starting materials, and the mixture gas of 5% H2/95% N2 was used to avoid the $H_2S$or $CS_2$. We investigated the luminescence characteristic of $SrGa_2S_4:Eu^{2+}$ phosphor prepared in various synthesis conditions, performed post-treatment and sieving process for application to LED.

Photostimulated Luminescence and Photoluminescence of SrCl2:Eu2+ Phosphors (SrCl2:Eu2+ 형광체의 광발광 및 광자극발광 특성)

  • Doh, Sih-Hong;Seo, Hyo-Jin;Kim, Young-Kook;Kim, Do-Sung;Kim, Sung-Hwan;Kim, Chan-Jung;Lee, Byung-Hwa;Kim, Wan;Kang, Hee-Dong
    • Journal of Sensor Science and Technology
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    • v.11 no.6
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    • pp.319-326
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    • 2002
  • $SrCl_2:Eu^{2+}$ phosphors were prepared by the solid phase reaction method, and their photostimulated luminescence(PSL) and photoluminescence(PL) characteristics were investigated. The PSL and PL peak of the $SrCl_2:Eu^{2+}$ phosphors are due to the $5d{\rightarrow}4f$ transition of $Eu^{2+}$ ions in phosphors. The PSL and PL spectrum obtained by the 355nm excitation was observed in $380{\sim}440\;nm$ region with the peak at 407 nm. The dose response of the PSL phosphors were linear within $2.5\;mGy{\sim}200\;mGy$ of 100 kV X-ray. The fading of the phosphors at room temperature was approximately 60% after 20 min.

A Study on Photoluminance Properties of $(Y,Gd)BO_3:Eu^{3+}$ Phosphor Synthesized by Ultrasonic Spray Pyrolysis (초음파 분무법으로 제조한 $(Y,Gd)BO_3:Eu^{3+}$ 형광체의 발광특성에 관한 연구)

  • Kim, Dae-Su;Lee, Rhim-Youl
    • Korean Journal of Materials Research
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    • v.10 no.3
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    • pp.204-211
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    • 2000
  • The $(Y,Gd)BO_3:Eu$ red phosphors for PDP application were synthesized by ultrasonic spray method and then their photoluminance properties were investigated under 147nm VUV irradiation. The precursor solution of acetates of Y, GD and Eu and boric acid diluted in water was sprayed using 1.7 MHz ultra-sonic sprayer into the reaction tube held at high temperature. The as-sprayed particles were amorphous phase having C-C and C-H bonds due to the insufficient thermal reaction during the pass along the tube. But the sprayed samples followed by heat treatment at $1100^{\circ}C$ had the same crystal structure and chemical composition as those samples followed by solid state reaction. It was found that the $(Y_{0.7}Gd_{0.3})_{0.95} BO_3:Eu_{0.05}^{3+}$ phosphor particles synthesized by spray at $500^{\circ}C$ and then heat treated at $900^{\circ}C$ had a spherical-like shape and fine particle size at $0.7{\mu\textrm{m}}$ having a narrow size distribution, while the phosphor particles made by solid state reaction was $3{\mu\textrm{m}}$ coarse and non-uniform size distribution. The emitting intensity under 147nm VUV excitation for $(Y_{0.7}Gd_{0.3})_{0.95}BO_3:Eu_{0.05}^{3+}$ phosphor prepared by spray method was found to be higher than those phosphor made by solid state reaction and the commercial $(Y,Gd)BO_3:Eu$ product.

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A Brazing Defect Detection Using an Ultrasonic Infrared Imaging Inspection (초음파 열 영상 검사를 이용한 브레이징 접합 결함 검출)

  • Cho, Jai-Wan;Choi, Young-Soo;Jung, Seung-Ho;Jung, Hyun-Kyu
    • Journal of the Korean Society for Nondestructive Testing
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    • v.27 no.5
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    • pp.426-431
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    • 2007
  • When a high-energy ultrasound propagates through a solid body that contains a crack or a delamination, the two faces of the defect do not ordinarily vibrate in unison, and dissipative phenomena such as friction, rubbing and clapping between the faces will convert some of the vibrational energy to heat. By combining this heating effect with infrared imaging, one can detect a subsurface defect in material in real time. In this paper a realtime detection of the brazing defect of thin Inconel plates using the UIR (ultrasonic infrared imaging) technology is described. A low frequency (23 kHz) ultrasonic transducer was used to infuse the welded Inconel plates with a short pulse of sound for 280 ms. The ultrasonic source has a maximum power of 2 kW. The surface temperature of the area under inspection is imaged by an infrared camera that is coupled to a fast frame grabber in a computer. The hot spots, which are a small area around the bound between the two faces of the Inconel plates near the defective brazing point and heated up highly, are observed. And the weak thermal signal is observed at the defect position of brazed plate also. Using the image processing technology such as background subtraction average and image enhancement using histogram equalization, the position of defective brazing regions in the thin Inconel plates can be located certainly.

Influence of InGaAs Capping Layers on the Properties of InAs/GaAs Quantum Dots (InAs/GaAs 양자점의 발광특성에 대한 InGaAs 캡층의 영향)

  • Kwon, Se Ra;Ryu, Mee-Yi;Song, Jin Dong
    • Journal of the Korean Vacuum Society
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    • v.21 no.6
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    • pp.342-347
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    • 2012
  • The optical properties of InAs quantum dots (QDs) grown on a GaAs substrates by migration enhanced molecular beam epitaxy method have been investigated by using photoluminescence (PL) and time-resolved PL measurements. The luminescence properties of InAs/GaAs QDs have been studied as functions of temperature, excitation laser power, and emission wavelength. The PL peak of InAs QDs capped with $In_{0.15}Ga_{0.85}As$ layer (QD2) measured at 10 K is redshifted about 80 nm compared with that of InAs QDs with no InGaAs layer (QD1). This redshift of QD2 is attributed to the increase in dot size due to the diffusion of In from the InGaAs capping layer. The PL decay times of QD1 and QD2 at 10 K are 1.12 and 1.00 ns taken at the PL peak of 1,117 and 1,197 nm, respectively. The reduced decay time of QD2 can be explained by the improved carrier confinement and enhanced wave function overlap due to increased QD size. The PL decay times for both QD1 and QD2 are independent on the emission wavelength, indicating the uniformity of dot size.

Development and spectroscopic characteristics of the high-power wave guide He Plasma (도파관식 고출력 헬륨 플라즈마의 개발과 분광학적 특성 연구)

  • Lee, Jong-Man;Cho, Sung-Il;Woo, Jin-Chun;Pak, Yong-Nam
    • Analytical Science and Technology
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    • v.25 no.5
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    • pp.265-272
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    • 2012
  • Okamoto cavity was modified to generate high power (2.45 GHz, 2 kW) He, N2 and Ar plasmas with WR-340 waveguide. Many factors which influence to the plasma generation were optimized and investigated for the spectroscopic properties of the He plasma generated. Some of the important factors are the diameter of the inner conductor, the distance between the inner and outer conductors and the distance between the tip of the inner conductor and the torch. After optimization for the He, two torches (a commercial mini torch for ICP and a tangential flow torch made locally) were compared and showed similar results for the helium plasma gas flow of 25 L/min~30 L/min. A tall torch (extended) was used to block the air in-flow and reduced the background intensity at 340 nm region (NH band). Emission intensity was measured for determination of halogen element in the aqueous solution with power and carrier gas flow rate. Electron number density and the excitation temperature were on the order of $3.67{\times}10^{11}/cm^3$ and 4,350 K, respectively. These values are similar or a bit smaller than other microwave plasmas. It has been possible to analyze aqueous samples. The detection limit for Cl (479.45 nm) was obtained to be 116 mg/L and needs analytical optimization for the better performance.

[ $LaNbO_4$ ] : X (X = Bi, Eu)형광체의 발광 및 저 전압 음극선 발광 특성 (Photoluminescent and low voltage cathodoluminescent properties of $LaNbO_4$ : X (X = Bi, Eu) phosphors)

  • On Ji-Won;Kim Youhyuk
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.16 no.1
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    • pp.32-37
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    • 2006
  • Rare-earth niobates, ag (Ln = Y, La, Gd) are well-known self-activated phosphors due to charge transfer in $NbO^{3-}_4$ showing a broad and strong emission band in the spectral region around 410 nm. In order to find new blue and red phosphors for FED, $LaNbO_4$ : X (X = Bi, Eu) phosphors are prepared through solid-state reactions at high temperature. The optimum reaction condition for these phosphors to give maximum emission intensity is obtained when it is first fired at $1250^{\circ}C$ for 2 h followed by second firing at $1400^{\circ}C$ for 1 h. Under irradiation at 254 nm, $1mol\%\;Bi^{3+}$ doped $LaNbO_4$ phosphor shows strong blue emission band with a range of $420\~450nm$. Also $10mol\%\;Eu^{3+}$ doped $LaNbO_4$ phosphor shows the maximum emission intensity at about 610 nm. Emission peaks at $415\~460nm$, $530\~560nm$and $570\~620nm$are observed in phosphors below $10mol\%\;Eu^{3+}$ doped $LaNbO_4$. Similar results are obtained in cathodoluminescent property of these phosphors.