• 한국재료학회지
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• 제24권7호
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• pp.351-356
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• 2014

A spherical $Sr_4Al_{14}O_{25}:Eu^{2+}$ phosphor for use in white-light-emitting diodes was synthesized using a liquid-state reaction with two precipitation stages. For the formation of phosphor from a precursor, the calcination temperature was $1,100^{\circ}C$. The particle morphology of the phosphor was changed by controlling the processing conditions. The synthesized phosphor particles were spherical with a narrow size-distribution and had mono-dispersity. Upon excitation at 395 nm, the phosphor exhibited an emission band centered at 497 nm, corresponding to the $4f^65d{\rightarrow}4f^7$ electronic transitions of $Eu^{2+}$. The critical quenching-concentration of $Eu^{2+}$ in the synthesized $Sr_4Al_{14}O_{25}:Eu^{2+}$ phosphor was 5 mol%. A phosphor-converted LED was fabricated by the combination of the optimized spherical phosphor and a near-UV 390 nm LED chip. When this pc-LED was operated under various forward-bias currents at room temperature, the pc-LED exhibited a bright blue-green emission band, and high color-stability against changes in input power. Accordingly, the prepared spherical phosphor appears to be an excellent candidate for white LED applications.

• 전력전자학회논문지
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• 제16권5호
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• pp.521-531
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• 2011

본 논문은 그림자 영향을 고려한 PV(Photovoltaic) 시스템의 VPO(Variable Perturbation & Observation)MPPT(Maximum Power Point Tracking) 제어를 제시한다. 태양전지의 출력 특성은 비선형이고 온도, 일사량 및 그림자의 영향을 많이 받는다. MPPT 제어는 태양광발전 시스템의 출력 및 효율을 증가시키기 위한 매우 중요한 기술이다. 종래의 PO(Perturbation & Observation)와 IC(Incremental conductance) 등은 지속적인 자려진동에 의해 MPP(Maximum Power Point)를 찾는 방법으로 그림자 영향에 의해 출력이 급격하게 변할 경우 MPPT 제어를 수행하지 못한다. 이러한 문제점을 해결하기 위해 출력 변동에 따라 스텝 값이 변하는 새로운 제어 알고리즘을 제시한다. 제시한 알고리즘은 일사량, 온도 및 그림자 영향에 대해 종래의 제어 알고리즘과 응답특성을 비교하고 이를 통해 제시한 알고리즘의 타당성을 입증한다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.80-80
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• 2010

Graphene has attracted tremendous attention for the last a few years due to it fascinating electrical, mechanical, and chemical properties. Up to now, several methods have been developed exclusively to prepare graphene, which include micromechanical cleavage, polycrystalline Ni employing chemical vapor deposition technique, solvent thermal reaction, thermal desorption of Si from SiC substrates, chemical routes via graphite intercalation compounds or graphite oxide. In particular, polycrystalline Ni foil and conventional chemical vapor deposition system have been widely used for synthesis of large-area graphene. [1-3] In this study, synthesis of mono-layer graphene on a Ni foil, the mixing ratio of hydrocarbon ($CH_4$) gas to hydrogen gas, microwave power, and growth time were systemically optimized. It is possible to synthesize a graphene at relatively lower temperature ($500^{\circ}C$) than those (${\sim}1000^{\circ}C$) of previous results. Also, we could control the number of graphene according to the growth conditions. The structural features such as surface morphology, crystallinity and number of layer were investigated by scanning electron microscopy (SEM) and atomic force microscopy (AFM), transmission electron microscopy (TEM) and resonant Raman spectroscopy with 514 nm excitation wavelength. We believe that our approach for the synthesis of mono-layer graphene may be potentially useful for the development of many electronic devices.

• Tribology and Lubricants
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• 제35권1호
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• pp.77-86
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• 2019

The present study focuses on the effect of staggered integration factor (SIF) on Morton effect simulation results. The Morton effect is a synchronous rotordynamic instability problem caused by the temperature differential across the journal in fluid film bearings. Convection and conduction of heat in the thin film displaces the hot spot, which is the hottest circumferential position in the thin film, from -20 to 40 degrees ahead of the high spot, where the minimum film clearance is experienced. The temperature differential across the journal causes a bending moment and the corresponding thermal bow in the rotating frame acts like a distributed synchronous excitation in the fixed frame. This thermal bow may cause increased vibrations and continued growth of the synchronous orbit into a limit cycle. The SIF is developed assuming that the response of the rotor-lubricant-bearing dynamic system is much quicker than that of the bearing-journal thermal system, and it is defined as the ratio between the simulation time of the thermal system and the rotor-spinning period. The use of the SIF is unavoidable for efficient computing. The value of the SIF is chosen empirically by the software users as a value between 100 and 400. However, the effect of the SIF on Morton effect simulation results has not been investigated. This research produces simulation results with different values of SIF.

• 한국전기전자재료학회논문지
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• 제37권1호
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• pp.68-73
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• 2024

In this study, the praseodymium-doped yttrium phosphate (YPO₄:Pr³⁺) powder, which is well known for its high luminescent efficiency, and long life in the UV range, was synthesized with various content ratios of Pr₆O₁₁ and calcination temperature. Crystal structure and luminescent properties of various phosphor powders based on different concentrations and calcination conditions were characterized by XRD (X-Ray Diffraction) and PL (photoluminescence) spectrometers. From the XRD analysis, the structure of YPO₄:Pr³⁺ which is calcinated at 1,200℃ was stable tetragonal phase and crystal size was calculated about 25 nm by Scherrer equation. PL emission of YPO₄:Pr³⁺ with a different content ratio of Pr₆O₁₁ by excitation λ_exc=250 nm shows that 0.75 mol% phosphor powder has maximum PL intensity and PL decreases with the increase of the ratio of Pr₆O₁₁ up to 1.25 mol% which is caused by changes of crystallinity of phosphor powders. With increasing dopant ratio, photo-luminescence Emission decreases due to Concentration quenching, which is commonly observed in phosphors. Currently, 0.75 mol% is considered the optimal doping concentration. A hybrid ultraviolet-emitting device incorporating YPO₄:Pr³⁺ fluorescent material with plasma discharge was fabricated to enhance UV germicidal effects while minimizing ozone generation. UV emission from the plasma discharge device was shown at about 200 nm and 350 nm which caused additional emission of the regions of 250 nm, 315 nm, and 370 nm from the YPO₄:Pr³⁺ phosphor.

• 한국진공학회지
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• 제18권2호
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• pp.127-132
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• 2009

Sb에 기초한 응력 초격자 적외선검출소자의 구성 물질인 도핑하지 않은 기판 GaSb 결정과 GaSb/SI-GaAs 박막에 잔존하고 있는 진성결함 (intrinsic defect)을 비교 조사하였다. 상온 근처 (250 K)까지 광여기 발광 (PL)을 보이는 GaSb 결정에서의 발광 에너지의 온도의존성으로부터, 밴드갭 에너지에 관한 경험식인 Varshni 함수의 파라미터 ($E_o$, $\alpha$, $\beta$)를 결정하였다. GaAs 기판 위에 성장된 이종 GaSb 박막에서는 GaSb 주요 진성결함으로 알려져 있는 29 meV의 이온화 에너지를 가지는 위치반전 (antisite) Ga ([$Ga_{Sb}$]) 결함과 함께 위치반전 Sb ([$Sb_{Ga}$])와의 복합결함 ([$Ga_{Sb}-Sb_{Ga}$])과 관련된 것으로 분석된 732/711 meV의 한 쌍의 깊은준위 (deep level)가 관측되었다. PL의 온도 및 여기출력 의존성을 분석하여, Sb-rich상태에서 성장된 GaSb 박막에서는 잉여 Sb의 자발확산 (self-diffusion)에 의하여 치환된 위치전도 [$Ga_{Sb}$] 및 [$Sb_{Ga}$]가 결합하여 [$Ga_{Sb}-Sb_{Ga}$]의 깊은준위를 형성하는 것으로 해석되었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.77-77
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• 2016

Thin films synthesized by plasma processes have been widely applied in a variety of industrial sectors. The structure control of thin film is one of prime factor in most of these applications. It is well known that the structure of this film is closely associated with plasma parameters and species of plasma which are electrons, ions, radical and neutrals in plasma processes. However the precise control of structure by plasma process is still limited due to inherent complexity, reproducibility and control problems in practical implementation of plasma processing. Therefore the study on the fundamental physical properties that govern the plasmas becomes more crucial for molecular scale control of film structure and corresponding properties for new generation nano scale film materials development and application. The thin films are formed through nucleation and growth stages during thin film depostion. Such stages involve adsorption, surface diffusion, chemical binding and other atomic processes at surfaces. This requires identification, determination and quantification of the surface activity of the species in the plasma. Specifically, the ions and neutrals have kinetic energies ranging from ~ thermal up to tens of eV, which are generated by electron impact of the polyatomic precursor, gas phase reaction, and interactions with the substrate and reactor walls. The present work highlights these aspects for the controlled and low-temperature plasma enhanced chemical vapour disposition (PECVD) of Si-based films like crystalline Si (c-Si), Si-quantum dot, and sputtered crystalline C by the design and control of radicals, plasmas and the deposition energy. Additionally, there is growing demand on the low-temperature deposition process with low hydrogen content by PECVD. The deposition temperature can be reduced significantly by utilizing alternative plasma concepts to lower the reaction activation energy. Evolution in this area continues and has recently produced solutions by increasing the plasma excitation frequency from radio frequency to ultra high frequency (UHF) and in the range of microwave. In this sense, the necessity of dedicated experimental studies, diagnostics and computer modelling of process plasmas to quantify the effect of the unique chemistry and structure of the growing film by radical and plasma control is realized. Different low-temperature PECVD processes using RF, UHF, and RF/UHF hybrid plasmas along with magnetron sputtering plasmas are investigated using numerous diagnostics and film analysis tools. The broad outlook of this work also outlines some of the 'Grand Scientific Challenges' to which significant contributions from plasma nanoscience-related research can be foreseen.

• 자원리싸이클링
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• 제13권6호
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• pp.37-42
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• 2004

NiO, ZnO 조성이 다른 Ni-Cu-Zn 페라이트의 손실 분석을 실시했다. 손실, Ph는 측정 온도의 상승에 따라 감소해 100-120$^{\circ}C$ 근처에서 일정한 값을 얻었다. Pcv의 주파수의존성은 Pcv~f$^n$ 로 표현될 수 있는데, n은 1 MHz까지 일정했다. Pcv는 ZnO/NiO비가 증가함에 따라 감소한다. Pcv를 Hysteresis loss(Ph) 및 잔류손실(Pcv-Ph)로 분리했다. Pcv의 온도특성 및 조성 의존성은 Ph에 기인하지만, Pcv-Ph는 온도 및 조성에 의존하지 않는다. Ph와 초투자율, ${\mu}_i$의 온도 및 조성 의존성을 분석해, 다음과 같은 식이 성립된다는 것을 알 수 있었다. ${\mu}_i{\mu}_0=I_s^2/(K_I+b{\sigma}_0{\lambda}_s)$ Wh=13.5(I$_s^2/{\mu}_i{\mu}_0)$ 여기서, ${\mu}_0$은 진공의 투자율, I$_s$는 포화자화, K$_I$는 이방성상수, ${\sigma}_0$는 내부 불균일 응력, ${\lambda}_s$는 자기이방성 상수, b는 미지의 상수, Wh는 1주기 당의 히스테리시스 손실(Ph=Wh${\times}$f)이다. Ni-Cu-Zn 페라이트의 Steinmetz 상수 m=1.64~2.2는 Mn-Zn 페라이트보다는 적은데, 이는 양 재료 간의 손실 메커니즘의 차가 있음을 암시하는 것이다.

• 한국자원리싸이클링학회:학술대회논문집
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• 한국자원리싸이클링학회 2004년도 13회 산화철워크샵
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• pp.3-11
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• 2004

NiO, ZnO 조성이 다른 Ni-Cu-Zn 페라이트의 손실 분석을 실시했다. 손실, Ph는 측정 온도의 상승에 따라 감소 해 $100-120^{\circ}C$ 근처에서 일정한 값을 얻었다. Pcv 의 주파수의존성은 $Pcv\~f^n$ 로 표현될 수 있는데, n는 1 MHz 까지 일정했다. Pcv 는 ZnO/NiO 비가 증가함에 따라 감소한다. Pcv 를 Hysteresis loss, Ph 및 잔류손실, (Pcv-Ph)로 분리했다. Pcv 의 온도특성 및 조성 의존성은 Ph에 기인하지만, (Pcv-Ph)는 온도 및 조성에 의존하지 않는다 Ph 와 초투자률, ${\mu}$i의 온도 및 조성 의존성을 분석 해, 다음과 같은 식이 성립된다는 것을 알 수 있었다. $${\mu}\;_i{\mu}\;_o=I_s\;^2/(K_1+b{\sigma}\;_o{\lambda}\;_s)\;\;\;\;(1)$$ $$Wh=13.5(I_s\;^2/{\mu}\;i{\mu}\;0)\;\;\;\;(2)$$ 여기서, ${\mu}\;_o$ 은 진공의 투자율, $I_s$, 는 포화자화, $K_1$는 이방성상수, ${\sigma}_\;o$는 내부 불균일 응력, ${\lambda}_\;s$ 는 자기이방성 상수,b는 미지의 정수, Wh는 1 주기 당의 히스테리시스 손실(Ph=Wh*f)이다. Ni-Cu-Zn 페라이트의 Steinmetz 정수 m=1.64-2.2는 Mn-Zn 페라이트보다는 적은데, 이는 양 재료간의 손실 메커니즘의 차가 있음을 암시하는 것이다.

• 한국결정성장학회지
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• 제17권4호
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• pp.156-159
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• 2007

본 연구에서는 장파장 UV 영역하에서 비교적 우수한 발광강도를 가지는 적색 형광체를 얻기 위하여 고상법으로 합성하여 발광특성을 관찰하였다. $SrAl_{12}O_{19}:Mn^{4+}$ 적색 형광체의 발광강도는 $Mn^{4+}$의 $^2E\to^4A_2$ 천이 때문에 643, 656, 666, 671 nm에서 4개의 sharp한 peak이 $600{\sim}700 nm $의 영역에서 발생하였으며, 여기 스펙트럼은 $250{\sim}550 nm$ 넓은 영역에서 338, 398, 468nm 3개의 peak이 발생하였다. 또한 $SrAl_{12}O_{19}:Mn^{4+}$에 0.67mol% MgO를 함유한 $SrAl_{12}O_{19}:Mn^{4+}$의 상대적인 발광강도는 $SrAl_{12}O_{19}:Mn^{4+}$ 보다 약 30% 정도 증가하였는데, 이러한 원인은 MgO가 첨가되어 $Al_2O_3$ 부분에 대체되어진 것으로 사료된다. 또한, 발광강도를 향상시키기 위하여 0.67mol% MgO를 함유한 $SrAl_{12}O_{19}:Mn^{4+}$ 시료에 $CaF_2$를 첨가하였다. 0.67mol% $CaF_2$와 0.67mol% MgO를 함유한 $SrAl_{12}O_{19}:Mn^{4+}$의 656nm에서의 상대적인 발광강도는 융제를 첨가하지 않은 $SrAl_{12}O_{19}:Mn^{4+}$보다 약 48% 이상 증가하였다.