• Journal of ILASS-Korea
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• v.3 no.4
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• pp.35-42
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• 1998

Laser Raman scattering method has been applied to measure equivalence ratio of methane/air and propane/air mixture in constant volume combustion chamber. We used high power KrF excimer laser$(\lambda=248nm)$ and a high gain ICCD camera to capture low intensity Raman signal. Raman shifts and Ram cross-sections of $H_2,\;O_2,\;N_2,\;CO_2,\;CH_4\;and\;C_3H_8$ were measured precisely. Our results showed an excellent agreement with other groups. Mole fraction measurement of $O_2\;and\;N_2$ from air showed that $O_2\;:\;N_2$ = 0.206 : 0.794. We used constant volume combustion chamber and gas injector which is operated at $5\sim10barg$. Methane and propane are used as a fuel. 50 Raman signal are obtained and ensemble averaged for measurement of equivalence ratio. Our measured results showed that the equivalence ratio of fuel/air mixture is reasonable at ${\pm}5%$ error range.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.4
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• pp.157-164
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• 2003

$LaF_{3}$ thin films have been fabricated on Si (100) substrates under the highest possible vacuum condition by pulsed laser deposition (PLD) method. The temperature of the sbustrate varied from $20^{\circ}C$ to $800^{\circ}C$. The films deposited at the higher temperature indicated the sharper peaks in the X-ray diffraction measurement. A highly oriented film was successfully obtained at a substrate temperature of $800^{\circ}C$. The surface observation by the AFM revealed that the many hexagonal structures constructed the film. The XPS analysis revealed that the lacking of F in the film deposited at $600^{\circ}C$ were much more than that in film at $^20{\circ}C$. Adding the adequate amount of $CF_{4}$ gas in the growth chamber can compensate this lacking of F.

• Korean Journal of Optics and Photonics
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• v.4 no.1
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• pp.1-8
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• 1993

A design of four-mirror optical system with reduction magnification 5X for deep UV ($\lambda$=248 nm of KrF excimer laser) submicron lithography is presented. Initially by using the paraxial quantities, the domain of solution for $t=d_1+d_2+d_3$<0 (d;: distance between the mirror $c_i$ and $c_{i+1}$ is found for the system which is free from the four off-axial Seidel first order aberrations that are coma, astigmatism, field curvature, and distortion. The solution with $d_5$=2.95 (normalized with respect to $c_i$= -1) is choosen and the aspherization is carried out to the spherical mirror surfaces ($c_3$ and $c_4$ in order to reduce the axial and residual off-axial higher order aberrations. The numerical aperture of the final system is as large as 0.4, which gives Rayleigh resolution of 0.38 $\mu\textrm{m}$.

• Korean Journal of Optics and Photonics
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• v.4 no.1
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• pp.57-65
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• 1993

Small XeCl laser of charge transfer discharge excitation was fabricated and output charateristics were investigated according to gas mixture ratio. Beam cross section of 2.7cm${\times}$1.5cm was obtained by constructing excimer laser which preionization is operated automatically and which has chang profile electrode. According to the component gas mixture ratio, the condition of maximum output energy, efficiency were investigated. The maximum energy, efficiency and specific energy were obtained 230 mJ, 1.6% and 1.1 J/l, respectively. The long pulse effect is observed by constructing low peaking to main capacitance ratio of 1:3.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.6
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• pp.568-573
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• 2006

We have synthesized new blue light emitting random copolymers, poly(9,9'-n-dioctylfluorene-co-perfluorobenzene-1,4-diyl)s (PFFBs), via Ni(0)-mediated coupling reactions. The weight-average molecular weights ($M_w$) of the PFFB copolymers ranged from 9,000 to 15,000. The PFFB copolymers dissolved in common organic solvents such as THF and toluene. The PL emission peaks of the PFFB copolymers were at around 420, 440, and 470 nm. EL devices were fabricated in ITO/PEDOT/polymer/Ca/Al configurations using these polymers. These EL devices were found to exhibit pure blue emission with approximate CIE coordinates of (0.15, 0.11) at $100cd/m^2$. The blue emissions of these devices might be due to the restriction of the polymer chains to aggregation by introducing of the highly electronegative fluorine moieties. The maximum brightnesses of the PFFB copolymer devices ranged from 140 to $3600cd/m^2$ with maximum efficiencies from 0.2 to 0.6 cd/A. The enhanced efficiency of the PFFB (8/2) copolymer device results from the inhibition of excimer formation by the introduction of the electronegative fluorine moieties into the copolymers.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.2052-2054
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• 2005

TFT-LCD requires to use poly silicon for High resolution and High integration. Thin film make of Poly silicon on the excimer laser-induced crystallization of PECVD(plasma-enhanced chemical vapor deposition)-grown amorphous silicon. In the thin film hydrogen affects to a device performance from bad elements like eruption, void and etc. So dehydrogenation prior to laser exposure was necessary. In this study, use RTP(Rapid Thermal Process) at various temperature from $670^{\circ}C$ to $750^{\circ}C$ and fabricate poly-silicon. it propose optimized RTP window to compare grain size to use poly silicon's SEM pictures and crystallization to analyze Raman curved lines.

• Transactions of the Korean Society of Automotive Engineers
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• v.12 no.1
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• pp.74-82
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• 2004

Planar laser-induced fluorescence(PLIF) has been widely used to obtain two dimensional fuel distribution. Acetone PLIF is chosen because fluorescence signal from acetone as a fluorescent tracer is less sensitive to oxygen quenching than other dopants. Acetone PLIF is applied to measure quantitative air excess ratio distribution in an engine fueled with LPG. Acetone is excited by KrF excimer laser (248nm) and its fluorescence image is acquired by ICCD camera with a cut-off filter to suppress Mie scattering from the laser light. For the purpose of quantifying PLIF signal, an image processing method including the correction of laser sheet beam profile is suggested. Raw images are divided by each intensity of laser energy and profile of laser sheet beam. Inhomogeneous fluorescence images scaled with the reference data, which is taken by a calibration process, are converted to air excess ratio distribution. This investigation shows instantaneous quantitative measurement of planar air excess ratio distribution for gaseous fuel.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.75-76
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• 2007

Poly-Si Schottky barrier Thin Film Transistor (SB-TFT) is manufactured with erbium silicided source/drain. High quality poly-Si film was obtained by crystallizing the amorphous Si film with Excimer laser annealing (ELA) method. The fabricated poly-Si SB-TFT devices showed low leakage current and large on/off current ratio. Moreover, the electrical characteristics were considerably improved by 3% $H_2/N_2$ gas annealing, which is attributed to the reduction of trap states at the grain boundaries and interface trap states at gate oxide/poly-si channel.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.375-375
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• 2007

In the conventional crystallization method, thepoly-Si TFTs show poor device-to-device uniformity because of the random location of the grain boundaries. However, our new crystallization method introduced in this paper employed substrate-embedded seeds on the highly ordered anodic alumina template to control both the location of seeds and the number of grain boundaries intentionally. In the process of excimer laser crystallization (ELC), a-Si film deposited on the anodic alumina by low pressure chemical vapor deposition (LPCVD) is transformed into fine poly-Si grains by explosive crystallization (XC) prior to primary melting. At the higher energy density, the film is nearly completely melted and laterally grown by super lateral growth (SLG) from remained small part of the fine poly-Si grains as seeds at the Si/anodic alumina interface. Resultant grain boundaries have almost linear functions of the number of seeds in concavities of anodic alumina which have a constant spacing. It reveals the uniformity of. device can be enhanced prominently by controlling location and size of pores which contains fine poly~Si seeds under artificial anodizing condition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.396-396
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• 2007

Highly ordered pore structures as a template for formation of seeds have been prepared by the self-organization process of aluminum oxidation. The a-Si films were deposited on the anodic alumina films and crystallized by laser irradiation. It was found that un-melted part of fine poly-Si grain formed by explosive crystallization (EX) lead super lateral growth(SLG) and occluded with neighbor grains. The crystallized grains along the distribution of seeds were obtained. This results show a great potential for use in novel crystallization for decently uniform polycrystalline Si thin film transistors (poly-Si TFTs).