• Journal of information and communication convergence engineering
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• v.1 no.4
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• pp.228-232
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• 2003

The previous design work for very large final amplifier pumped by electron beam module was described from the point of view of energy characteristics. In this work, the design problems for phase front distortion, ASE, and gain control in large aperture amplifier are presented in detail.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.509-512
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• 2006

In this paper, we proposed the novel device and process design to enhance the uniformity of low-temperature poly-Si TFTs fabricated by sequential lateral solidification (SLS). The proposed design schemes can avert the conventional two-shot SLS process-induced issues. Moreover, different design considerations between conventional excimer laser crystallization and the SLS process were also proposed and discussed.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.50-55
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• 2003

In this paper, we describe and review the main techniques which are currently being used or studied, in order to synthesise thin films of device-worthy polycrystalline silicon material (poly-Si) on glass or other non-refractory large area substrates. The problems and limitations of the excimer laser processing are first emphasised and some novel or revisited crystallisation processes with good potential for industrialisation are subsequently presented and discussed.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.1131-1134
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• 2003

A low temperature doping technique has been studied for application in poly-Si TFT's on plastic substrates. Heavily-doped amorphous silicon layers were deposited on poly-Si and the dopant atoms were driven in by subsequent excimer laser annealing. The entire process was carried out under a substrate temperature of $120^{\circ}C$, and a sheet resistance as low as $300 {\Omega}/sq$. was obtained.

• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.29-32
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• 2002

This paper describes a novel structure of NMOSFET with elevated SiGe source/drain region and ultra-shallow source/drain extension(SDE)region. A new ultra-shallow junction formation technology. Which is based on damage-free process for rcplacing of low energy ion implantation, is realized using ultra-high vacuum chemical vapor deposition(UHVCVD) and excimer laser annealing(ELA).

• Proceedings of the Optical Society of Korea Conference
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• 1991.06a
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• pp.81-87
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• 1991

A design of a four-mirror optical system for submicron lithography using KrF excimer laser beam(λ=248nm) is presented. By using the third order aberration theory, analytic solutions for a telecentric, flat-field, and anastigmatic four-spherical-mirror system (reduction magnification 5$\times$) are found. Aspherization is carried out to the spherical mirror surfaces in order to reduce the residual higher order aberrations and vignetting effect. Finally we obtain a reflection system useful in submicron lithographic application.

• Proceedings of the KIEE Conference
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• 1995.11a
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• pp.329-331
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• 1995

Laser ablation was used to fabricate superconducting $YBa_2Cu_3O_{7-x}$ (YBCO) thin films on metallic substrates with an YSZ buffer layer. An ArF excimer laser with an wavelength of 193 nm was used to deposit both YSZ buffer layer and superconducting thin film. The characterizations of thin films were performed and compared. With a 200 nm YSZ buffer layer, c-axis orientation and $T_c$=85 K were obtained for a 200 nm-thick YBCO film.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 1999.11a
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• pp.46-52
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• 1999

Laser diagnostics have been extensively used to understand plasma behaiviour under different discharge conditions. Measurements were performance for (i) electric field, (ii) electron temperature and density, and (iii) reaction products due to chemical reactions by electron impacts. The knowledge thus gained has been extensively used to realize novel plasma performances, such as epitaxial thin film depositions using plasma sputtering, performance improvements of discharge-pumped excimer laser, and developments of environmental equipment.

• 연구논문집
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• s.25
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• pp.115-120
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• 1995

The aim of this project is the development of technology of production of micro mechanical parts. Materials are Cr, pt or film (thickness $1000-3000\AA$) on glass substrate. Method of manufacturing is resistless direct laser ablation based on the projection technology. A source of radiation is KrF excimer laser(248nm), Experiments of threshold energy are carried out and the results are analyzed by SEM.

• Proceedings of the KIEE Conference
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• 1990.07a
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• pp.462-464
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• 1990

We report the development of a surface discharge preionized KrF discharge Laser with a new type of high-brightness Corona preionizer using a segmented columnar $BaTiO_3$ dielectric. This Laser characteristic was higher value than that obtained with the conventional corona preionizer using a glass, $Al_2O_3ceramic$, Kapton film, or a Teflon insulator.