• Title/Summary/Keyword: Exchange field

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Spin Torque Nano-Oscillator with an Exchange-Biased Free Rotating Layer

  • You, Chun-Yeol
    • Journal of Magnetics
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    • v.14 no.4
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    • pp.168-171
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    • 2009
  • We propose a new type of spin torque nano-oscillator structure with an exchange- biased free rotating layer. The proposed spin torque nano-oscillator consists of a fixed layer and a free rotating layer with an additional anti-ferromagnetic layer, which leads to an exchange bias in the free rotating layer. The spin dynamics of the exchange-biased free rotating layer can be described as an additional exchange field because the exchange bias manifests itself by the existance of a finite exchange bias field. The exchange bias field plays a similar role to that of a finite external field. Hence, microwave generation can be achieved without an external field in the proposed structure.

The guided field distribution characteristics in the ion-exchange channel glass waveguide (이온 교환 채널 유리 도파로의 도파광 분포특성)

  • 박정일;박태성;천석표;정홍배
    • Electrical & Electronic Materials
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    • v.8 no.3
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    • pp.332-339
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    • 1995
  • In this paper, it was investigated the guided field intensity distribution of the channel in the silver & potassium ion-exchange glass-waveguide. The guided field intensity distribution analysis of ion-exchange glass-waveguide was based on the combination of the WKB dispersion relationship method with a Gaussian distribution function of refractive index profile and the Field Shadow method to the modeling of the channel waveguide. As the results of the channel waveguide modeling, it was represented 2-dimensional and 3-dimensional field distribution of ion-exchange glass waveguide.

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External Magnetic Field Influence on Exchange Coupling Oscillations in Ultrathin Fe/Au/Tb Film Structures

  • Pogoryelov, Ye.
    • Journal of Magnetics
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    • v.9 no.4
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    • pp.97-100
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    • 2004
  • In the present work exchange coupling between ultrathin Fe ($8{\AA}$) and Tb ($12{\AA}$) layers separated by Au spacer of varied thickness ($3-20{\AA}$) was studied. Anomalous Hall effect measurements showed weakly damped oscillating dependence of the Hall conductivity as a function of Au spacer thickness. Disagreement of the observed damping with the RKKY model of interlayer exchange coupling was explained by the influence of external magnetic field on the behaviour of exchange coupling oscillations. It was confirmed by Hall-like effect measurements at zero applied magnetic field and also illustrated by corresponding estimations.

Exchange Coupling in NiFe/Ni Bilayer Fabricated By Electrodeposition

  • Kim, D.Y.;Jeon, S.J.;Kim, K.W.;Yoon, S.S.
    • Journal of Magnetics
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    • v.16 no.2
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    • pp.97-100
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    • 2011
  • Bilayers of soft NiFe (150 nm-420 nm) on hard Ni (150 nm) were prepared by electrodeposition. The process of magnetization reversal in the NiFe/Ni bilayers was then investigated. The hysteresis loop generated by a magnetization reversal of soft NiFe under a positive saturation state of a hard Ni layer shows a shift along the negative field axis, which is clear evidence for the exchange spring effect in the NiFe/Ni bilayers. The dependence of the coercive field $H_c$ and exchange bias field Hex on the thickness of the NiFe layer was also investigated. As the NiFe thickness increases from 150 nm to 420 nm, both $H_c$ and $H_{ex}$ decrease rapidly from $H_c$= 51.7 Oe and $H_{ex}$ = 12.2 Oe, and saturate to $H_c$ = 5.8 Oe and $H_{ex}$ = 3.5 Oe.

Effects of Thickness of Ferromagnetic Co Layer and Annealing on the Magnetic Properties of Co/IrMn Bilayers. (Co/IrMn 이층막의 자기적 특성과 Co 두께 및 어닐링의 영향)

  • Jung, Jung-Gyu;Lee, Chan-Gyu;Koo, Bon-Heun;Lee, Gun-Hwan;Hayashi, Yasunori
    • Korean Journal of Materials Research
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    • v.13 no.7
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    • pp.447-452
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    • 2003
  • Effects of annealing and thickness of Co layer in Co/IrMn bilayers on the magnetic properties have been investigated. The highest interfacial exchange coupling energy($J_{K}$ = 0.12 erg/$\textrm{cm}^2$) was obtained for 10 nm Co layer thickness. Exchange bias field is inversely proportional to the magnetization, the thickness of the pinned layer, and the grain size of antiferromagnetic layer. Also it is related to the interfacial exchange energy difference, which is expected to depend on the surface roughness. These results almost agree with the random-field model of exchange anisotropy proposed by Malozemoff. Exchange bias field decreased slowly with increasing annealing temperature up to X$300^{\circ}C$. However, exchange bias field increased above $300^{\circ}C$.

The Exchange Bias of NiO/NiFe Thin Eilm by the Measurement of Anisotropic Mngnetoresistance (이방성 자기저항측정을 이용한 NiO/NiFe 박막의 교환결합연구)

  • Kim, Jong-Kee;Kim, Sun-Wook;Lee, Ky-Am;Lee, Sang-Suk;Hwang, Do-Guwn
    • Journal of the Korean Magnetics Society
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    • v.12 no.4
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    • pp.143-148
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    • 2002
  • We report an experimental evidence of coexistence of the strong and weak exchange couplings in unidirectional NiO/NiFe (antiferromagneticlferromagnetic) bilayer thin films. The exchange bias was measured by VSM and AMR techniques and then, analyzed into the strong and weak exchange couplings by means of a regression method. In NiO(60nm)/NiFe(10nm) film, the ratio of the weak exchange coupling field over the average exchange coupling field was found to be almost unchanged within it range from 0.2 to 0.4 irrespective to the strength of an applied field. However, the ratio increased among the samples with decreasing the average exchange coupling field due to the increment of the weak exchange coupling area.

Increment of the Exchange Coupling in Fe-Ni Alloy Thin Films Deposited with a Bias Magnetic Field

  • Han, Kyung-Hunn;Kim, Jung-Gi;Cho, Jae-Hun;Lee, Suk-Mock
    • Journal of Magnetics
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    • v.11 no.2
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    • pp.77-82
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    • 2006
  • The structure and magnetic properties of Fe-Ni films, deposited by DC magnetron sputtering on Si(111) wafer, have been studied. The spin wave stiffness constant is determined by Brillouin light scattering (BLS) and compared with the value obtained from magnetization measurements. The range of exchange interaction was determined as 0.4 atomic distances in the film deposited in a bias magnetic field, which is 1/2 that in the film grown in no bias magnetic field. The results show that the dimensions of exchange coupling increased by the sputtering in the magnetic field.

Annealing Temperature Dependence of Exchange Bias Effect in Short Time Annealed NiFe/NiMn Bilayer Thin Film by FMR Measurement

  • Yoo, Yong-Goo;Park, Nam-Seok;Min, Seong-Gi;Yu, Seong-Cho
    • Journal of Magnetics
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    • v.10 no.4
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    • pp.133-136
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    • 2005
  • The NiMn/NiFe bilayer structure which was short time annealed in order to induce unidirectional anisotropy were studied as a function of annealing temperature. The maximum exchange bias field of NiMn/NiFe bilayer was presented at $250^{\circ}C$ after short time annealing process with no external field. The appearance of exchange bias was due to phase transformation of NiMn layer. In plane angular dependence of a resonance field distribution which measured by FMR was analysed as a combined effect of unidirectional anisotropy and uniaxial anisotropy. The resonance field and the line width from FMR measurement were also analysed with annealing temperature.

Exchange Bias Study by FMR Measurment (강자성 공명에 의한 Exchange Bias 연구)

  • Yoo, Yong-Goo;Park, Nam-Seok;Min, Seong-Gi;Yu, Seong-Cho
    • Journal of the Korean Magnetics Society
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    • v.15 no.5
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    • pp.265-269
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    • 2005
  • Exchange bias effect of a various layered thin films were studied by FMR measurment. In plane angular dependence of a resonance field distribution which measured by FMR was analysed as a combined effect of an unidirectional anisotropy and an uniaxial anisotropy. Exchange biased NiFe/IrMn, IrMn/NiFe/IrMn, and NiFe/IrMn/CoFe thin films showed larger unidirectional anisotropy field and uniaxial anisotropy field with compared to that of an unbiased NiFe single thin film. In case of NiFe/Cu/IrMn, the film with thick Cu layer exhibited a similar trend to the unbiased NiFe thin film. NiFe/IrMn/CoFe thin film showed two resonance field distribution due to different ferromagnetic layers. In additon to the resonance field, the line width was also analysed with related to exchange bias effect.

Magnetization Process in Vortex-imprinted Ni80Fe20/Ir20Mn80 Square Elements

  • Xu, H.;Kolthammer, J.;Rudge, J.;Girgis, E.;Choi, B.C.;Hong, Y.K.;Abo, G.;Speliotis, Th.;Niarchos, D.
    • Journal of Magnetics
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    • v.16 no.2
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    • pp.83-87
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    • 2011
  • The vortex-driven magnetization process of micron-sized, exchange-coupled square elements with composition of $Ni_{80}Fe_{20}$ (12 nm)/$Ir_{20}Mn_{80}$ (5 nm) is investigated. The exchange-bias is introduced by field-cooling through the blocking temperature (TB) of the system, whereby Landau-shaped vortex states of the $Ni_{80}Fe_{20}$ layer are imprinted into the $Ir_{20}Mn_{80}$. In the case of zero-field cooling, the exchange-coupling at the ferromagnetic/antiferromagnetic interface significantly enhances the vortex stability by increasing the nucleation and annihilation fields, while reducing coercivity and remanence. For the field-cooled elements, the hysteresis loops are shifted along the cooling field axis. The loop shift is attributed to the imprinting of displaced vortex state of $Ni_{80}Fe_{20}$ into $Ir_{20}Mn_{80}$, which leads to asymmetric effective local pinning fields at the interface. The asymmetry of the hysteresis loop and the strength of the exchange-bias field can be tuned by varying the strength of cooling field. Micromagnetic modeling reproduces the experimentally observed vortex-driven magnetization process if the local pinning fields induced by exchange-coupling of the ferromagnetic and antiferromagnetic layers are taken into account.