• 제목/요약/키워드: Excess holes

검색결과 19건 처리시간 0.023초

혼합된 정공 수송 층을 이용한 유기발광소자의 효율 및 수명 개선 (Improved Efficiency and Lifetime for Organic Light-emitting Devices based on Mixed-hole Transporting Layer)

  • 서지현;박정현;박일흥;김준호;김영관
    • 한국전기전자재료학회논문지
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    • 제20권3호
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    • pp.257-262
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    • 2007
  • Organic light-emitting diodes (OLEDs) with the high efficieney and long lifetime are of growing interest in next-generation displays. Among the factors influencing OLEDs properties, one of unstable factor is $Alq_3$ cationic species caused by the excess holes resided in $Alq_3$ layer. Therefore, we suppressed the accumulation of excess holes by using the mixed-hole transporting layer (MHTL) of NPB and CBP in multilayer green OLEDs. The devices with MHTL showed improved characteristics in the luminous efficiency and lifetime. More characteristics and the carrier transport mechanism will be discussed.

혼합된 정공 수송 층을 이용한 유기발광소자의 효율 및 수명 개선 (Improved Efficiency and Lifetime for Organic Light-Emitting Devices Based on Mixed-Hole Transporting Layer)

  • 서지현;박정현;김준호;김영관
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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    • pp.67-68
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    • 2006
  • Organic light-emitting devices (OLEDs) with the high efficiency and long lifetime are of growing interest in next-generation displays. Among the factors influencing OLEDs properties, one of unstable factor is $Alq_3$ cationic species caused by the excess holes resided in $Alq_3$ layer. Therefore, we suppressed the accumulation of excess holes by using the mixed-hole transporting layer (MHTL) of NPB and CBP in multilayer green OLEDs. The devices with MHTL showed improved characteristics in the luminance efficiency and lifetime. More characteristics and the carrier transport mechanism will be discussed.

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$Pb(Zn, Mg)_{1/3}Nb_{2/3}O_3-PbTiO_3$계에서 구성 산화물 첨가에 따른 Perovskite상 안정화 및 DPT성 증대 효과 (Stbilization of Perovskite Phase and Enhanced DPT Characteristics of $Pb(Zn, Mg)_{1/3}Nb_{2/3}O_3-PbTiO_3$ Ceramics by the Additionof Excess Constituent Oxides)

  • 이규만;장현명;유병두
    • 한국세라믹학회지
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    • 제30권11호
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    • pp.925-932
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    • 1993
  • The perovskite phase in PZN-PMN-PT (Pb(Zn, Mg)1/3Nb2/3O3-PbTiO3) pseudoternary ceramics was stabilized by the addition of excess constituent divalent oxides (PbO, MgO and ZnO). The excess addition of 5mol% MgO or 7.5mol% PbO fully stabilized the perovskite phase. The enhanced diffuse phase transition (DPT) and the decrease in the electrical resistivity observed in the presence of excess ZnO or MgO were interpreted in terms of the additional formation of negatively charged, short-range ordered 1:1 domains with a concomitant generation of charge carriers, holes.

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Effect of the LiF anode interfacial layer on polymer light emitting diodes

  • Sohn, Sun-Young;Lee, Dae-Woo;Park, Keun-Hee;Jung, Dong-Geun;Kim, H.M.;Manna, U.;Yi, J.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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    • pp.1056-1058
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    • 2005
  • Electrical and optical characteristics of MEH-PPV-based PLEDs with the LiF anode interfacial layer were investigated. The maximum luminance efficiency of the device with a LiF anode interfacial layer of 1-nm-thick was 3.0 lm/W, which is higher than 1.97 lm/W of the device without a LiF layer. By inserting LiF, excess injected holes from ITO anode can be blocked and hence the recombination ratio of electrons and holes can be increased in the emitting layer to improve device efficiency.

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제주도 동부지역 지하수의 염수화에 관한 연구 (Study on The Salinization in Groundwater of the Eastern Area of Cheju Island)

  • 김지영;오윤근;류성필
    • 한국환경과학회지
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    • 제10권1호
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    • pp.47-58
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    • 2001
  • According to the results of the groundwater quality investigation about 230 holes all over the country, the groundwater which was in excess of standard grows larger every year and closed holes increased to 23,457 holes in 1997 from 15,724 holes in 1996. This is the major reasons that water quality contamination, shortage of water quantity, increasing of salinity and so on. There are 7 groundwater salinization sources which are condisered as most important on a regional level. And among theses the Cheju Island groundwater salinization sources are (1) halite solution, (2) natural saline groundwater, (3) sea-water intrusion. The method of taking an isotopes is one of research methods of the origin of groundwater salinization and is used in so many studies because it has very high confidence. $^{18O}O, ^2H, ^3H, ^{14}C$ and so on in an isotopes are frequently used in the method of them. Consequently on this study we analyzed major ions and $^3H$ in groundwater, sea-water and rain of the eastern part of cheju island known as contaminated site from long time ago to examine the origin of groundwater salinization. Relation ratios of the major ions versus chloride ion shows similar tendency to sea-water. This indicates that sea-water entered the groundwater layer. And amount of $^3H$ in holes of the land side is higher than of the sea side. Relation of chloride ion versus $^3$H indicates negative character. Therefore we can think that the reason of groundwater salinization of this part is natural saline groundwater and halite solution by relation.

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전계발광 소자에서 정공 차단 물질로서의 4,4',4'-trifluoro-triazine의 특성 (The Characteristices of the 4,4',4'-trifluoro-triazine as a hole Blocking Material in Electroluminescent Devices)

  • 신지원;신동명;손병청
    • 한국응용과학기술학회지
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    • 제17권2호
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    • pp.120-125
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    • 2000
  • The tfTZ(4,4',4''-trifluoro-triazine) was used as a hole blocking material for the electroluminescent devices(ELDs) in this study. In general, the holes are outnumbered the electrons in hole transport and emitting layers because the hole transport is more efficient in most organic ELDs. The hole blocking layer are expected to control the excess holes to increase the recombination of holes and electrons and to decrease current density. The former study using the 2,4,6-triphenyl-1,3,5-triazine(TTA) as hole blocking layer showed that the TTA did not form stable films with vapor deposition technique. The tfTZ can generate stable evaporated films, moreover the fluorine group can lower the highest occupied molecular orbital(HOMO) level, which produces the energy barrier for the holes. The tfTZ has high electron affinities according to the data by the Cyclic-Voltammety(CV) method, which is developed for the measurement of HOMO and lowest occupied molecular orbital(LUMO) level of organic thin films. The lowered HOMO level is made the tfTZ to be applied for a hole blocking layer in ELDs. We fabricated multilayer ELDs with a structure of ITO/hole blocking layer(HBL)/hole transporting layer(HTL)/emitting layer/electrode. The hole blocking properties of this devices is confirmed from the lowered current density values compared with that without hole blocking layer.

콘크리트 성능개선을 위한 탈수거푸집공법의 실용화 연구 (A Study on the Development of Dewatering Mold Form for Performance Improvement of Concrete)

  • 우광민;이학기
    • 한국건설관리학회논문집
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    • 제4권4호
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    • pp.88-95
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    • 2003
  • 탈수거푸집공법은 거푸집 표면에 잉여수를 배출시킬 수 있는 구멍을 뚫고 내측에 섬유포를 부착하여 콘크리트 타설시 잉여수 및 혼입공기를 배출시키는 공법으로 시공상의 워커빌리티를 확보하면서 콘크리트 표층부 품질을 강화시킬 수 있다. 따라서 제치장 콘크리트 표면의 강도를 극대화할 뿐만 아니라, 수밀한 콘크리트 표층부를 생성하기 때문에 물이나 공기, 염분 등이 침투하기 어려워 콘크리트의 내구성을 크게 향상시킬 수 있다. 그러나 현재 국내에서는 이론적으로는 제기되고 있으나, 관련규준 및 시공방법에 대한 연구가 부재해 공사현장에서 적용할 기회가 없는 실정이다. 이에 본 연구에서는 물성실험을 통해 탈수거푸집 설계를 위한 기초자료를 제공하고, 이를 바탕으로 한 현장적용실험을 통해 탈수거푸집공법의 실용화 방안을 제안하고자 한다.

저압 화학 증착된 WSix 박막의 열처리에 따른 거동 (Annealing Behaviors of Wsix Film Formed by LPCVD)

  • 이재호;임호빈
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1988년도 춘계학술대회 논문집
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    • pp.52-55
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    • 1988
  • Tunsten silicide (WSix) films on polycrystalline silicon were formed by low-pressure chemical vapor deposition (LPCVD) and were annealed in $N_2$ for 30 mins at various temperatures. The annealing behaviors of tungsten silicide films have been investigated by electrical resistivity measurements, X-ray diffraction methods, scanning electron microscopy (SEM) and Hall measurements. The electrical resistivity decreased almost linearly with increasing annealing temperature and reached $35{\mu}{\Omega}-cm$ at $1000^{\circ}C$ annealing. The X-ray and SEM analyses indicate that crystallization of $WSi_2$ and grain growth occurs when annealed above $1000^{\circ}C$. Excess silicon redistribution occurs considerably when annealed above $1000^{\circ}C$. By Hall measurements, the carrier type for specimens annealed at $1000^{\circ}C$ was found to be positive holes, while the carriers were electrons in the specimens that were annealed at $800^{\circ}C$.

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Mixed oxide 광촉매의 제조 및 광분해 효율 평가 (Preparation of the mixed oxide photocatalyst and its quantum yield.)

  • Kim, Dong H.;Lee, Tai K.;Kim, Kyung N.;Chungmoo Auh;Kim, Kwang B.;Lee, Seung W.
    • 한국에너지공학회:학술대회논문집
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    • 한국에너지공학회 1995년도 춘계학술발표회 초록집
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    • pp.45-52
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    • 1995
  • 광 촉매로 널리 알려진 TiO$_2$의 광 분해 거동의 변화를 관찰하기 위하여 Nb$_2$O$_{5}$를 첨가하여 sol-gel 용법으로 제조한 후 DCA(dichloroacetic acid) 의 광분해 효율을 측정하였다. Sol-gel process 과정에서 첨가된 Nb$_2$O$_{5}$의 농도 및 열처리 온도변화에 따른 광분해 효율을 관찰한 결과, Nb$_2$O$_{5}$를 첨가한 후 40$0^{\circ}C$에서 한시간 동안 열처리 한 광 촉매의 광분해 효율이 가장 높게 나타났다. 또한 열처리 온도와 무관하게 Nb$_2$O$_{5}$의 양이 증가할수록 광분해 효율은 감소하는 것으로 관찰되었다. 이는 excess electron 의 증가로 환원 반응 혹은 recombination rate기 증가하기 때문이라고 사료된다. 분해 대상 물질의 pH가 낮을수록 광분해 효율이 증가하는 것을 알 수 있었다.알 수 있었다.

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Metal Surface Treatment Effects on Screen Printed Silicon Solar Cells

  • Chakrabarty K.;Mangalaraj D.;Kim K. H.;Dhungel S. K.;Park J. H.;Singh S. N.
    • Transactions on Electrical and Electronic Materials
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    • 제4권4호
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    • pp.22-25
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    • 2003
  • High series resistance due to the presence of glass frit is one of the major problems for screen printed silicon solar cells. Cells having electrical parameters below the prescribed values are usually rejected during solar module fabrication. Therefore, it is highly desirable to improve the electrical parameters of the silicon solar cells and thereby to increase the overall production yield. It was observed that, the performance of low quality mono-crystalline silicon solar cells made by standard screen printing technology could be improved remarkably by novel surface treatment. We have chemically treated the surface using sodium hydroxide (NaOH) and silver nitrate ($AgNO_3$) solutions. NaOH treatment helps to reduce the series resistance by decreasing the presence of excess glass frit on the top silver grid contact. The $AgNO_3$ treatment is used to reduce the series resistance comes from the deposition of silver on the grids by filling the holes present (if any) within the grid pattern.