• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.05a
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• pp.9-9
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• 2009

Coated conductor is required to have good critical current property for high efficiency of electric power applications. Until now, long coated conductor does not show high Jc over 3 MA/$cm^2$ in thick superconducting layer because of texture degradation by thick superconducting layer. In this study, in order to overcome this issue, thicker superconducting layer was deposited with optimized conditions to reduce the degradation of critical current density. SmBCO superconducting coated conductor was deposited with 1~3 um of thickness at $750\sim850^{\circ}C$ under 15~20 mTorr of oxygen partial pressure using batch type EDDC( evaporation using drum in dual chamber). The buffered substrate for superconducting layer deposition was used IBAD-MgO template with the architecture of $LaMnO_3/MgO/Y_2O_3/Al_2O_3$/Hastelloy. After fabrication of coated conductor, critical current was measured by 4-prove method under self-magnetic field and 77K. In addition, surface morphology and texture were analyzed by SEM and XRD, respectively. 3 um thick SmBCO coated conductor shows highest $I_C$ values of 638A/cm-w in 1 m long in the world.

• Bulletin of the Korean Chemical Society
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• v.34 no.4
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• pp.1137-1144
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• 2013

$TiO_2$ composites with seven different carbon materials (activated carbons, graphite, carbon fibers, single-walled carbon nanotubes, multi-walled carbon nanotubes, graphene oxides, and reduced graphene oxides) that are virgin or treated with nitric acid are prepared through an evaporation method. The photocatalytic activities of the as-prepared samples are evaluated in terms of $H_2$ production from aqueous methanol solution (photo-catalytic reduction: PCR) and degradation of aqueous pollutants (phenol, methylene blue, and rhodamine B) (photocatalytic oxidation: PCO) under AM 1.5-light irradiation. Despite varying effects depending on the kinds of carbon materials and their surface treatment, composites typically show enhanced PCR activity with maximum 50 times higher $H_2$ production as compared to bare $TiO_2$. Conversely, the carbon-induced synergy effects on PCO activities are insignificant for all three substrates. Colorimetric quantification of hydroxyl radicals supports the absence of carbon effects. However, platinum deposition on the binary composites displays the enhanced effect on both PCR and PCO reactions. These differing effects of carbon materials on PCR and PCO reactions of $TiO_2$ are discussed in terms of physicochemical properties of carbon materials, coupling states of $TiO_2$/carbon composites, interfacial charge transfers. Various surface characterizations of composites (UV-Vis diffuse reflectance, SEM, FTIR, surface area, electrical conductivity, and photoluminescence) are performed to gain insight on their photocatalytic redox behaviors.

• Journal of the Korean Magnetics Society
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• v.9 no.2
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• pp.104-110
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• 1999

The effect of the composition and the heat treatment on the magnetic and magnetoresistance properties in AgCo alloy films and Fe/AgCo/Fe trilayers prepared by the co-evaporation method were studied. As the alloy film thickness decreases, especially below 50 nm thick, the magnetoresistance decreases and the saturation field increases significantly. The change of the Co content, heat treatment, and deposition of the Fe under/over-layer were effective to prevent the reduction of the and the increasing of the saturation field. For 40 at.%Co sandwiches, the minimum saturation field was obtained in the 20 nm alloy film with 30nm Fe under-over layer annealed at 300 $^{\circ}C$ for 10 min. Its saturation field and the MR ratio were 1.01 kOe 5.16% respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.11
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• pp.968-972
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• 2008

Ni/Ti/Al multilayer system ('/'denotes the deposition sequence) was tested for low-resistance ohmic contact formation to Al-implanted p-type 4H-SiC. Ni 30 nm / Ti 50 nm / Al 300 nm layers were sequentially deposited by e-beam evaporation on the 4H-SiC samples which were implanted with Al (norminal doping concentration = $4\times10^{19}cm^{-3}$) and then annealed at $1700^{\circ}C$ for dopant activation. Rapid thermal anneal (RTA) temperature for ohmic contact formation was varied in the range of $840\sim930^{\circ}C$. Specific contact resistances were extracted from the measured current vs. voltage (I-V) data of linear- and circular transfer length method (TLM) patterns. In constrast to Ni contact, Ni/Ti/Al contact shows perfectly linear I-V characteristics, and possesses much lower contact resistance of about $2\sim3\times10^{-4}\Omega{\cdot}cm^2$ even after low-temperature RTA at $840^{\circ}C$, which is about 2 orders of magnitude smaller than that of Ni contact. Therefore, it was shown that RTA temperature for ohmic contact formation can be lowered to at least $840^{\circ}C$ without significant compromise of contact resistance. X-ray diffraction (XRD) analysis indicated the existence of intermetallic compounds of Ni and Al as well as $NiSi_{1-x}$, but characteristic peaks of $Ti_{3}SiC_2$, a probable narrow-gap interfacial alloy responsible for low-resistance Ti/Al ohmic contact formation, were not detected. Therefore, Al in-diffusion into SiC surface region is considered to be the dominant mechanism of improvement in conduction behavior of Ni/Ti/Al contact.

• Current Applied Physics
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• v.18 no.12
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• pp.1496-1506
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• 2018

Organic/inorganic ultraviolet photodetector was fabricated using thermal evaporation technique. Organic/inorganic heterojunction based on thermally evaporated copper (II) acetylacetonate thin film of thickness 200 nm deposited on an n-type silicon substrate is introduced. I-V characteristics of the fabricated heterojunction were investigated under UV illumination of intensity $65mW/cm^2$. The diode parameters such as ideality factor, n, barrier height, ${\Phi}_B$, and reverse saturation current, $I_s$, were determined using thermionic emission theory. The series resistance of the fabricated diode was determined using modified Nord's method. The estimated values of series resistance and barrier height of the diode were about $0.33K{\Omega}$ and 0.72 eV, respectively. The fabricated photodetector exhibited a responsivity and specific detectivity about 9 mA/W and $4.6{\times}10^9$ Jones, respectively. The response behavior of the fabricated photodetector was analyzed through ON-OFF switching behavior. The estimated values of rise and fall time of the present architecture under UV illumination were about 199 ms and 154 ms, respectively. Finally, enhancing the photoresponsivity of the fabricated photodetector, post-deposition plasma treatment process was employed. A remarkable modification of the device performance was noticed as a result of plasma treatment. These modifications are representative in a decrease of series resistance and an increase of photoresponsivity and specific detectivity. The process of plasma treatment achieved an increment of external quantum efficiency from 5.53% to 8.34% at -3.5 V under UV illumination.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.130.2-130.2
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• 2013

Today, chemical vapor deposition (CVD) of hydrocarbon gases has been demonstrated as an attractive method to synthesize large-area graphene layers. However, special care should be taken to precisely control the resulting graphene layers in CVD due to its sensitivity to various process parameters. Therefore, a facile synthesis to grow graphene layers with high controllability will have great advantages for scalable practical applications. In order to simplify and create efficiency in graphene synthesis, the graphene growth by thermal annealing process has been discussed by several groups. However, the study on growth mechanism and the detailed structural and optoelectronic properties in the resulting graphene films have not been reported yet, which will be of particular interest to explore for the practical application of graphene. In this study, we report the growth of few-layer, large-area graphene films using rapid thermal annealing (RTA) without the use of intentional carbon-containing precursor. The instability of nickel films in air facilitates the spontaneous formation of ultrathin (<2~3 nm) carbon- and oxygen-containing compounds on a nickel surface and high-temperature annealing of the nickel samples results in the formation of few-layer graphene films with high crystallinity. From annealing temperature and ambient studies during RTA, it was found that the evaporation of oxygen atoms from the surface is the dominant factor affecting the formation of graphene films. The thickness of the graphene layers is strongly dependent on the RTA temperature and time and the resulting films have a limited thickness less than 2 nm even for an extended RTA time. The transferred films have a low sheet resistance of ~380 ${\Omega}/sq$, with ~93% optical transparency. This simple and potentially inexpensive method of synthesizing novel 2-dimensional carbon films offers a wide choice of graphene films for various potential applications.

• Journal of the Korean Electrochemical Society
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• v.3 no.1
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• pp.44-48
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• 2000

Amorphous $V_2O_5$ cathode thin films were prepared by DC-magnetron sputtering at room temperature and the thin film rechargeable lithium batteries were fabricated with the configuration of $V_2O_5/LIPON/Li$ using sequential ex-situ thin film deposition techniques. The electrochemical characteristics of $V_2O_5$ cathode materials Prepared at 80/20 of $Ar/O_2$ ratio showed high capacity and cycling behaviors by half cell test. LIPON solid electrolytes films were prepared by RF-magnetron sputtering using the self-made $Li_3PO_4$ target in pure $N_2$ atmosphere, and it was very stable for lithium contact in the range of 1.2-4.0 V vs. Li. Metallic lithium were deposited on LIPON electrolyte by thermal evaporation methode in dry room. Vanadium oxide based full cell system showed the initial discharge capacity of $150{\mu}A/cm^2{\mu}m$ in the range of $1.2\~3.5V$.

• Journal of the Korean Society of Radiology
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• v.3 no.4
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• pp.29-33
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• 2009

Recently, the compound materials(a-Se, $HgI_2$, PbO, CdTe, $PbI_2$, etc.) that are used in flat panel x-ray imager have been studied for digital x-ray imaging. In this paper, the signal detection properties of $HgI_2$ and a-Se conversion layer, are compared. The thick $HgI_2$ film is fabricated by special particle-in-binder method and the conventional vacuum thermal evaporation is used for a deposition of a-Se film. And an electrical characteristic measurements were investigated about leakage current, signal response property and x-ray sensitivity. From the experimental results show that the $HgI_2$ film has a low operation voltage and high signal generation than that of a-Se.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2017.05a
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• pp.166-166
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• 2017

금속 재료 중 철강은 기계적 특성이 우수하고 대량생산이 가능하여 선박, 건축, 자동차 등 다양한 분야에 기초재료로써 널리 사용되고 있다. 그러나 스테인리스강 등과 같은 일부 특수한 용도의 강을 제외하고는 부식환경에 취약한 특성을 가지기 때문에 내식성을 향상을 위한 표면처리에 관한 연구가 활발히 진행되고 있다. 가장 일반적으로 습식법(wet process)을 통해 표면상에 아연(Zn)을 도금해 사용하며, 아연이 자체적으로 포함한 희생양극(sacrificial anode) 및 차폐(barrier) 효과가 철강의 부식을 방지하게 된다. 하지만 산업의 고도화에 따라 더욱 가혹해진 노출환경으로 인해 고내식 강재에 대한 수요가 점차 증가하고 있으며, 아연코팅 층의 두께를 증가하여 내식성을 확보하는 방안은 미래 환경 및 자원적인 측면에서 근본적인 해결책으로 제시하기 어려움이 있다. 한편, 건식 프로세스(wet process)로 대별되는 PVD(physical vacuum deposition)에 의해 내식성을 향상시키고자 하는 연구들이 다양하게 진행되고 있다. 이것은 표면에 고순도 양질의 금속 막을 형성시킴으로써 외부환경과의 반응을 효과적으로 제어가 가능하며, 형성된 막은 그 물질의 고유 특성뿐만 아니라 제작 조건에 따른 표면의 기하학적 혹은 결정학적 구조에 의해 크게 영향을 받게 된다. 본 연구에서는 실용금속 중 이온화 경향이 가장 크고 산소와 반응하여 투과성이 작은 산화 피막 형성이 유리한 마그네슘(Mg)을 활용해 표면의 전기화학적 특성을 향상시켰다. 또한 금속 증착 중 진공도조절을 위해 도입되는 불활성 가스로 아르곤(Ar) 및 질소($N_2$)를 사용하여 표면에 형성한 막의 모폴로지 및 결정배향성이 내식성에 미치는 상관관계를 해석하고자 하였다. 실험방법으로 PVD법 중 비교적 간편하고 기초적인 지침을 제시하기 적합할 것으로 고려된 진공증착(vacuum evaporation)법을 이용해 아르곤 및 질소 분위기에서 진공도를 조절하며 용융아연도금상 Mg막을 형성하였다. 제작조건별 막의 기초 특성을 분석하기위해 SEM, EDS, XRD를 이용하였고, 결정배향성(crystal orientation) 분석을 위해 면간격(d-value)과 상대강도(relative intensity)를 확인하였다. 또한 내식성 평가로 염수분무(salt sprat test) 및 양극분극(anode polarization)을 각각 실시하였다. 실험결과에 따르면, Ar 및 $N_2$ 모두에서 가스압이 증가할수록 코팅층의 증착량은 적어지고 입상정(granular structure)의 모폴로지 형성 및 면간격과 상대강도가 증가하는 것이 확인되었다. 또한 쳄버 내 동일 진공도에서, $N_2$ 도입 시 Mg막은 더욱 치밀하고 미세한 입상정의 모폴로지로 형성되며 면간격과 상대강도는 더욱 증가한 것으로 나타났다. 내식성 평가에서 저진공 $N_2$ 조건에서 형성시킨 막이 가장 우수한 내식성이 나타났는데, 이는 상대적으로 불안정하고 반응하기 유리한 입계면적을 많이 포함한 입상정 모폴로지 및 표면에너지가 높은면의 면점유율 증가로 인해 외부환경과의 신속한 반응은 물론 안정적인 피막형성이 용이하였기 때문일 것으로 사료된다. 이상으로 Ar 및 $N_2$ 가스압 조건에 따른 고내식 Mg 막의 유효성을 확인하였고 향후 내식성을 향상시키는 방법으로 응용 가능할 것으로 생각된다.

• Journal of the Microelectronics and Packaging Society
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• v.9 no.1
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• pp.9-13
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• 2002

Recently, Organic electroluminescent devices (OELDs) have been demonstrated the medium sized full color display with effective multi-layer thin films. In this study, the multi-layer OELDs were prepared on the patterened ITO (indium tin oxide)/glass substrates by the vacuum thermal evaporation method. The low molecule compounds such as $Alq_3$(trim-(8-hydroxyquinoline)aluminum) and CTM (carrier transfer material) as the electron transport and injection layers as well as TPD (triphenyl-diamine) and CuPc (copper phthalocyanine) as the hole transport and injection layers were used. The luminance was rapidly increased above the threshold voltage of 10 V. The luminance and emission spectrum for the OELDs samples with $A1/CTM/Alq_3$/TPD/1TO structures were found to be 430 cd/$m^2$and 512 nm at 17 V showing green color emission. In contrast, the samples with $Li-A1/Alq_3$/TPD/CuPC/1TO multi-structures showed 508 nm in emission spectrum and 650 cd/$m^2$at 17 V in the luminance. The increment of luminance may be ascribed to the improved efficiency of recombination in the region of the emission layers by the deposition of CuPc as hole injection layer and the low work function of the Li-Al electrode compared to the Al electrode.