• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.540-543
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• 2004

The stress of MgO thin film, which is used as a dielectric protective layer in AC-PDP, was measured by a laser scanning method. MgO films were deposited bye-beam evaporation on glass substrates with dielectrics layer on them in various deposition temperatures ranging from room temperature to 300 $^{\circ}C$. The compressive stress of MgO films was increased with increasing substrate temperature due to intrinsic stress accumulation, causing the densification of the films. Both firing voltage ($V_f$) and sustaining voltage ($V_s$) were reduced for the higher compressively stressed and densified films. In the other hand, another film properties such as preferred crystallographic orientation and surface roughness seemed not to influence the discharge characteristics of $V_f$ and $V_s$ significantly.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.4
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• pp.350-356
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• 2005

We report the space charge and the surface potential of the interface between metal and copper(Ⅱ)-phthalocyanine(CuPc) thin films by measuring the microwave reflection coefficients S/sub 11/ of thin films using a near-field scanning microwave microscope(NSMM). CuPc thin films were prepared on Au and Al thin films using a thermal evaporation method. Two kinds of CuPc thin films were prepared by different substrate heating conditions; one was deposited on preheated substrate at 150。C and the other was annealed after deposition. The microwave reflection coefficients S/sub 11/ of CuPc thin films were changed by the dependence on grain alignment due to heat treatment conditions and depended on thickness of CuPc thin films. Electrical conductivity of interface between metal and organic CuPc was changed by the space charge of the interface. By comparing reflection coefficient S/sub 11/ we observed the electrical conductivity changes of CuPc thin films by the changes of surface potential and space charge at the interface.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.129-132
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• 1999

A new single solution source MOCVD technique for the deposition of YBCO film has been developed, using a ultrasonic atomizer to feed the precursors into an evaporation zone. This method being investigated as a basis for future long wire fabrication, for example the electric power use, the magnatic applications, etc.. YBCO films were prepared on MgO(100) substrate, using mixture of Y, Ba, and Cu ${\beta}$ -diketonate chelate was dissolve in tetrahydrofuran as a solution sources. X-ray diffraction measurement indicated that the thin film grew epitaxially with the c-axis orientation perpandicular to the surface of the surface.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.788-796
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• 1996

$TiO_2$ films prepared by RF magnetron sputtering, electron beam evaporation, ion assisted deposition (IAD) and sol-gel method are prepared on c-Si substrate and vitreous silica substrate respectively. From the transmission spectra of $TiO_2$ films on vitreous silica substrate in the spectral region from 190 nm to 900 nm, k($\lambda$) of $TiO_2$ is obtained. Using k($\lambda$) in the interband transition region the coefficients of the quantum mechanical dispersion relation of an amorphous $TiO_2$ and hence n($\lambda$) including the optically opaque region of above fundamental transition energy are obtained. The spectroscopic ellipsometry spectra of $TiO_2$ films in the spectral region of 1.5-5.0eV are model analyzed to get the film packing density variation versus i) substrate material, ii) film thickness and iii) film growth technique. The complex refractive index change of these $TiO_2$ films versus water condensation is also studied. Film micro-structures by SE modelling results are compared with those by atomic force microscopy images and X-ray diffraction data.

• Journal of Sensor Science and Technology
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• v.5 no.1
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• pp.37-42
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• 1996

ZnO films have been deposited on oxide grown Si wafers by the conventional thermal evaporation method. Anhydrous zinc acetate was directly heated and sublimed in the laboratory-made brass boat. The substrates temperature varied from $200^{\circ}C$ to $600^{\circ}C$. Oxygen has been flowed into the deposition chamber to change the partial pressure of oxygen. The films deposited at high oxygen pressure exhibited higher resistivity than films at low pressure. X-Ray Diffraction(XRD), Energy Dispersive Spectroscopy(EDS) and Rutherford Backscattering Spectrometry (RBS) were conducted on the films to reveal the crystallinity and composition of the ZnO films. The ZnO films deposited at high oxygen pressure were extremly sensitive to the humidity of higher than 70 % RH.

• Proceedings of the KIEE Conference
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• 1999.07e
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• pp.2236-2238
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• 1999

This paper deals with the surface glow discharge characteristics and some physical properties of MgO thin films prepared by RF unbalanced magnetron sputtering(UBMS) in surface discharge type AC PDP. The minimum discharge voltage is obtained for the sample of substrate holder bias voltage -10V. The main factors that improves the discharge characteristics by applied bias voltage is considered to be due to the morphology changes or crystal structure of the MgO thin film by ion bombardment during deposition process Moreover, the anti-sputtering characteristics of MgO thin film by UBMS is more excellent than that of balanced magnetron sputtering(BMS) and E-beam evaporation method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11b
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• pp.13-14
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• 2004

Using Se as a photoconductive element and ZnS as a luminescent element, a Se/ZnS thin film device for light amplifier applications was fabricated and its characteristics were investigated At various conditions of substrate temperatures, heat treatment times, and heat treatment temperatures, Se thin films and ZnS thin films were separately deposited by an EBE(Electron Beam Evaporation) method of an high accuracy in deposition rates and the optimum fabrication conditions for the Se thin film and the ZnS thin film with a hexagonal structure were obtained The Se/ZnS thin film light amplifier was fabricated by evaporating the ZnS thin film on an ITO(Indium Tin Oxide) glass and the Se thin film on the ZnS thin film in sequence.

• Journal of the Korean Applied Science and Technology
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• v.20 no.2
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• pp.148-153
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• 2003

Electron transfer through an Langmuir-Blodgett(LB) monolayer film sandwiched between metal electrodes. We used an eicosanoic acid material and the material was very famous as a thin film insulating material. Eicosanoic acid monolayer was deposited by Langmuir-Blodgett(LB) technique and a subphase was a $CdCl_2$ solution as a 2${\times}10^{-4}$ mol/L. Also we used a bottom electrode as an Al/$Al_2O_3$ and a top electrode as a Al and Ti/Al. Here, the $Al_2O_3$ on the bottom electrode was deposited by thermal evaporation method. The $Al_2O_3$ layer was acted on a tunneling barrier and insulating layer in tunnel diode. It was found that the proper transfer surface pressure for film deposition was 25 mN/m and the limiting area per molecule was about 24 ${\AA}^2$/molecule. When the positive and negative bias applied to the molecular device, the behavior shows that a tunnel switching characteristics. This result were analyzed regarding various mechanisms.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.258-258
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• 2008

Among several available high-k dielectrics the lanthanum zirconium oxide ($LaZrO_x$) system is very attractive as a buffer insulating layer. Because both lanthanum and zirconium atoms, the constituents of the $LaZrO_x$ thin film, have been considered to be thermally stable in contact with Si. The $LaZrO_x$ films were deposited by a sol-gel method. After the deposition, The $LaZrO_x$ films were crystallized at $750^{\circ}C$ for 30 minutes in $O_2$ ambient. PVDF-TrFE films were deposited on these $LaZrO_x$/Si structures using a sol-gel technique. The sol-gel solution was spin-coated on $LaZrO_x$/Si structures at 500 rpm for 5 sec and 2500 rpm for 15 sec. The deposited layer was dried at $165^{\circ}C$ for 30 min in air on a hot-plate. Then, we deposited Au electrode on PVDF-TrFE films using thermal evaporation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.172-172
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• 2008

By thermal evaporation method, well-aligned ZnO nanowires were synthesized on sapphire substrate at $1000^{\circ}C$ with different oxygen flow rate by using pure ZnO powder (99.999 %). The as-synthesized ZnO nanowires were characterized by field emission scanning electron microscopy (FESEM) and transmission electron microscopy (TEM). The well-aligned nanowires are single crystalline in nature and perpendicularly grown along the c-axis. Also the growth rate of nanowires, such as diameter and length, had a tendency to increase as oxygen flow rate increased. Based on the PL measurement of ZnO nanowires, we found that the near band edge of emission redshifted with the increasing intensity of the defect-related green emission in proportion to the increase of oxygen flow rate. "This research was supported by the Korea Research Foundation Grant funded by the Korean Government(MOEHRD)" (The Regional Research Universities Program/Chungbuk BIT Research-Oriented University Consortium).