• 한국초전도ㆍ저온공학회논문지
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• 제14권4호
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• pp.5-11
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• 2012

In this review article, we focus on various co-evaporation technologies developed for the fabrication of high performance $REBa_2Cu_3O_{7-{\delta}}$ (RE: Y and Rare earth elements, REBCO) superconducting films. Compared with other manufacturing technologies for REBCO films such as sputtering, pulsed laser deposition (PLD), metal-organic deposition (MOD), and metal organic chemical vapor deposition (MOCVD), the co-evaporation method has a strong advantage of higher deposition rate because metal sources can be used as precursor materials. After the first attempt to produce REBCO films by the co-evaporation method in 1987, various co-evaporation technologies for high performance REBCO films have been developed during last several decades. The key points of each co-evaporation technology are reviewed in this article, which enables us to have a good insight into a new high throughput process, called as a Reactive Co-Evaporation by Deposition and Reaction (RCE-DR).

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2007년도 춘계종합학술대회
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• pp.517-520
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• 2007

The BSCCO thin film fabricated by using the layer by layer deposition method was compared with the BSCCO thin film fabricated by using the evaporation method. Reevaporation in the form of Bi atoms or $Bi_2O_3$molecules easily bring out the deficiency of Bi atoms in thin film due to the long sputtering time of the layer by layer deposition. On the other hand, the respective atom numbers corresponding to BSCCO phase is concurrently supplied on the film surface in the evaporation deposition process and leads to BSCCO phase formation. Also, it is cofirmed that by optimizing the deposition condition, each single phase of the Bi2201 phase and the Bi2212 phase can be fabricated, the sticking coefficient of Bi element is clearly related to the changing of substrate temperature and the formation of the Bi2212 phase.

• 열처리공학회지
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• 제14권3호
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• pp.151-154
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• 2001

$TiO_2$ thin film has wide application because of its high capacitanca, reflection, and good transmissivity in visible range. $TiO_2$ thin film can be made by thermal deposition method, reactive evaporation method, activated reactive evaporation(ARE) method. In the case of thermal deposition, the oxygen deficiency can occur because the melting point of Ti is very high. While in the case of reactive evaporation, high density $TiO_2$ can not be made, because reactive gas($O_2$) and evaporated material(Ti) are not fully combined, activated reactive evaporation, $TiO_2$ is easily deposited at lower gas pressure compared with reactive evaporation because the ionized reactive gas is made by plasma. Therefore, activated reactive evaporation is very useful to deposit the material having the high melting point. In this work, we formed $TiO_2$ thin film by activated reactive evaporation method. The surface of $TiO_2$ thin film was analyzed by X-ray photoelectron spectroscopy. The surface morphology which was analyzed by atomic force microscopy(AFM) shows that feature of the film surface is uniform. The dielectric capacitance, withstanding voltage were $600{\mu}F/cm^2$, 0.4V respectively. In further work, we can increase the withstanding voltage by improving the deposition parameter of substrates.

• 대한전자공학회논문지SD
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• 제44권11호
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• pp.43-50
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• 2007

ITO(Indium Tin Oxide) 전극 형성방법은 ITO 박막 자체의 전기 광학적 특성 뿐 아니라 ITO를 전극으로 하는 청색 발광 다이오드(파장 469nm)의 전기 광학적 특성 및 신뢰성에도 큰 영향을 미침을 확인하였다. 세 가지 ITO 전극 형성 방법 즉 electron beam evaporation법과 sputtering법, 그리고 electron beam evaporation법으로 먼저 증착한 뒤에 sputtering법으로 증착한 hybrid법 등을 사용하여 청색 발광 다이오드를 제작한 다음에 ITO 박막의 특성과 aging에 따른 발광 다이오드의 전기 광학적 특성 변화를 고찰하였다. 그 결과, ITO 전극을 sputtering 또는 electron beam evaporation 방법으로 형성한 발광 다이오드는 각각 sputtering damage의 문제와 전기저항이 증가하는 문제점을 안고 있음을 발견하였다. 그리고 이 문제점들을 hybrid 방법으로 해결하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.264-266
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• 2005

Manufacture of OLED device used thermal evaporation method. However thermal evaporation method has many defect as thermal damage of substrate, difficult of dopant rate control and low utilization of organic materials. so we suggest PLD(Pulsed Laser Deposition) method that solution of these problems. PLD method has many advantage as without thermal damage, easy indicate of deposition rate per one pulse and good utilization of organic materials. In this paper we apply the PLD method for manufacture of device so we present high efficiency device manufacture using PLD method that has good deposition uniformity, surface rough and deposition rate.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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• pp.571-574
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• 2003

The thin films fabricated by using the layer-by-layer sputtering was compared with the thin film fabricated by using the evaporation method. Re-evaporation in the form of Bi atoms or $Bi_2O_3$ molecules easily bring out the deficiency of Bi atoms in thin film due to the long sputtering time of the layer-by-layer deposition. On the other hand, the respective atom numbers corresponding to BiSrCaCuO phase is concurrently supplied on the film surface in the evaporation deposition process and leads to BiSrCaCuO phase formation. Also, it is cofirmed that by optimizing the deposition condition, each single phase of the Bi2201 phase and the Bi2212 phase can be fabricated, the sticking coefficient of Bi element is clearly related to the changing of substrate temperature and the formation of the Bi2212 phase.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 제6회 학술대회 논문집 일렉트렛트 및 응용기술연구회
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• pp.39-42
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• 2004

The $Bi_2Sr_2Ca_nCu_{n+1}O_x$ superconducting thin film fabricated by using the sputtering method was compared with the $Bi_2Sr_2Ca_nCu_{n+1}O_x$ superconducting thin film fabricated by using the evaporation method. In doing the ultra-low deposition because each element can exist on the substrate surface, both the sputtering method and the evaporation method could easily fabricate single phase of the Bi2212 phase. Also, it is cofirmed that by optimizing the deposition condition, each single phase of the Bi2201 phase and the Bi2212 phase can be fabricated, the sticking coefficient of Bi element is clearly related to the changing of substrate temperature and the formation of the Bi2212 phase.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.24-25
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• 2006

SmBCO coated conductors were successfully fabricated using EDDC (Evaporation using Drum in Dual Chambers) deposition system that is a bath type co-evaporation system for fabrication of superconducting tape and divided into two chambers named evaporation chamber and reaction chamber. To obtain long and high quality superconducting coated conductor, it is very important to secure the uniformity of all the deposition parameters m the deposition system such as deposition temperature, oxygen partial pressure, compositional ratios and so on. Therefore, we investigated the distribution of the parameters along the axis of the drum m EDDC on which tapes were wound helically. When the temperature on the middle point of deposition zone was $700^{\circ}C$, that on the edge of deposition zone was $675^{\circ}C$. When the thickness of SmBCO layer on the middle point of deposition zone was 1063 nm, that on the edge of deposition zone was 899 nm. The partial pressure of oxygen was 5 mTorr in the reaction chamber while that was $7{\times}10^{-5}$Torr in the evaporation chamber. The composition ratio of Sm:Ba:Cu, that was measured by EDX, was very uniform along the axis of the drum. Under these deposition conditions, critical current distribution along the drum axis was 175 A/cm, 190A/cm, 217.5 A/cm, 182.5 A/cm, 175 A/cm with the interval of 9 cm between samples. It means that the EDDC system has the potential of fabricating (100m, 200A) class coated conductor.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
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• pp.2172-2174
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• 2005

MgO has been used as the material of the protecting layer for AC PDP. AC PDP is influenced by characteristics of the surface glow discharge on the MgO thin film. Because MgO thin film is practically discharge electrodes, the discharge characteristics of MgO thin film should be varied with the method of deposition. In this study, changing order and time of deposition, we use electron beam evaporation system and R.F reactive magnetron sputtering system in the MgO deposition. Particularly, after using electron beam evaporation system, we use R.F. reactive magnetron sputtering system in the MgO deposition, then we could get lower amount of charge and higher luminance efficiency than only using electron beam evaporation system.

• 한국진공학회지
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• 제12권2호
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• pp.112-117
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• 2003

MgO 박막은 PDP(plasma display panels)분야에서 널리 사용되어 왔다. 본 연구에서는, 기존에 사용되고 있는 e-beam evaporation, reactive magnetron sputtering법과 arc deposition법으로 MgO 보호막을 증착하여 구조적 · 광학적 특성을 비교하였다. 반응 가스인 산소 가스의 유입량을 변화시켜 Mg metal target을 이용하여 vacuum arc deposition equipment 의해 유리 기판 위에 증착하였다. Ellipsometer를 이용하여 치밀도를 측정하고, MgO보호막의 마모율(erosion rate)를 측정하기 위해 가속 실험 방법을 도입, Ar+ 이온빔에 의한 erosion test를 시행하여 내마모성을 알아보았다. 또한, XPS와 UV test를 사용하여 MgO보호막의 광투과도에 미치는 수분의 영향을 조사한 결과, arc evaporation 법이 광투과도 90%이상을 유지하여 수분의 영향에 둔감한 것을 알 수 있었다. 한편, XRD와 AFM을 이용하여 MgO 박막의 구조와 표면 형상에 대해 조사하였다.