• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2000.06a
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• pp.1648-1653
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• 2000

Theoretical analysis of noise reduction by a membrane-duct system is presented. When acoustic waves propagate in the membrane-duct, the part of membrane is also excited and its motion is coupled with interior medium. For an infinite plane membrane-duct system, a simple coupled governing equation is derived and solved. One of the characteristics of dispersion relation is that evanescent waves occur below critical frequency. Attaching damping materials to the membrane may improve the absorption efficiency of acoustic energy. The results show that the membrane-duct system can be applied to diminish and absorb low frequency noise in duct instead of passive muffler, such as simple expansion chamber or absorption material.

• Journal of the Korean Society of Visualization
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• v.3 no.1
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• pp.3-19
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• 2005

Novel optical techniques are presented for three-dimensional tracking of nanoparticles; Optical Serial Sectioning Microscopy (OSSM) and Ratiometric Total Internal Reflection Fluorescent Microscopy (R-TIRFM). OSSM measures optically diffracted particle images, the so-called Point Spread Function (PSF), and dotermines the defocusing or line-of-sight location of the imaged particle measured from the focal plane. The line-of-sight Brownian motion detection using the OSSM technique is proposed in lieu of the more cumbersome two-dimensional Brownian motion tracking on the imaging plane as a potentially more effective tool to nonintrusively map the temperature fields for nanoparticle suspension fluids. On the other hand, R-TIRFM is presented to experimentally examine the classic theory on the near-wall hindered Brownian diffusive motion. An evanescent wave field from the total internal reflection of a 488-nm bandwidth of an argon-ion laser is used to provide a thin illumination field of an order of a few hundred nanometers from the wall. The experimental results show good agreement with the lateral hindrance theory, but show discrepancies from the normal hindrance theory. It is conjectured that the discrepancies can be attributed to the additional hindering effects, including electrostatic and electro-osmotic interactions between the negatively charged tracer particles and the glass surface.

• Journal of Korean Society of Coastal and Ocean Engineers
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• v.21 no.2
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• pp.117-126
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• 2009

In order to test the accuracy between the modified mild slope equation (MMSE) without evanescent modes and the plane-wave approximation (PA) of eigenfunction expansion method, various numerical results from both models are presented. In this study, analytical solutions of two models are employed, one based on the MMSE derived by Porter (2003) and the other on the scatterer method of PA by Seo (2008a). Judging from direct comparisons against existing results of rapidly varying topography, the PA model gives better predictions of the wave propagation than the MMSE model.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.128.1-128.1
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• 2016

Nitrided-metal gates on the high-${\kappa}$ dielectric material are widely studied because of their use for sub-20nm semiconductor devices and the academic interest for the evanescent states at the Si/insulator interface. Issues in these systems with the Si substrate are the electron mobility degradation and the reliability problems caused from N defects that permeates between the Si and the $SiO_2$ buffer layer interface from the nitrided-gate during the gate deposition process. Previous studies proposed the N defect structures with the gap states at the Si band gap region. However, recent experimental data shows the possibility of the most stable structure without any N defect state between the bulk Si valence band maximum (VBM) and conduction band minimum (CBM). In this talk, we present a new type of the N defect structure and the electronic structure of the proposed structure by using the first-principles calculation. We find that the pair structure of N atoms at the $Si/SiO_2$ interface has the lowest energy among the structures considered. In the electronic structure, the N pair changes the eigenvalue of the silicon-induced gap state (SIGS) that is spatially localized at the interface and energetically located just above the bulk VBM. With increase of the number of N defects, the SIGS gradually disappears in the bulk Si gap region, as a result, the system gap is increased by the N defect. We find that the SIGS shift with the N defect mainly originates from the change of the kinetic energy part of the eigenstate by the reduction of the SIGS modulation for the incorporated N defect.