• Bulletin of the Korean Chemical Society
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• v.32 no.3
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• pp.863-866
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• 2011

The electrode reaction of $Eu^{3+}$ in a LiCl-KCl eutectic melt has been re-examined using cyclic voltammetry (CV). In this work, for the first time, the kinetic details of a $Eu^{3+}/Eu^{2+}$ redox system have been completely elucidated, along with the thermodynamic property, through a curve fitting applied to experimental CV data, which were obtained in a wide scan rate range of 0.5 to 10 V/s. The simulated results showed an excellent fit to all experimental CV data simultaneously, even though the curve fittings were performed within a large dynamic range of initial transfer coefficient values, formal potentials, and standard rate constants. As a result, a proper formal potential, transfer coefficient, and standard rate constant for the $Eu^{3+}/Eu^{2+}$ redox system were successfully extracted using the CV curve fitting.

• Proceedings of the Korean Radioactive Waste Society Conference
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• 2018.05a
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• pp.409-410
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• 2018

• Korean Journal of Materials Research
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• v.2 no.4
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• pp.241-247
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• 1992

The direct bonding of Cu to $Al_2O_3$, employing the $Cu-Cu_2$O eutectic skin melt, is investigated. The bonding force and interface structure of samples prepared by oxidation at $1015^{\circ}C$ in $1.5{\times}10^{-1}$torr followed by bonding at 107$5^{\circ}C$ under $10_{-3}$ torr vacuum have been studied using peeling test, SEM, EDS and XRD. It has been found that the optimal strength is obtained for 3 minutes of oxidation while the adhesion force is decreased with oxidation shorter or longer than 3 minutes. The rupture occured at alumina-eutectic interface. Fractured surface of $Al_2O_3$covered with $Cu_2$O nodules pulled out of the Cu indicates that bonding strength is governed by $Cu-Cu_2$O interface and not by $Cu_2$O-A$l_2O_3$interface. The bonding force is slightly increased with bonding time and the reaction phases of CuA$l_2O_4$and $CuAlO_2$are formed at interface during the bonding.

• Journal of Korea Foundry Society
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• v.15 no.6
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• pp.566-573
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• 1995

In this study, the microstructural characteristics such as primary silicon, eutectic silicon, $SiC_p$ dispersion behavior, compound amount and Si solubility in $Al/SiC_p$ composite fabricated by the squeeze casting under various conditions were investigated systematically. As applied pressure(MPa) increases, cooling rate and compound amount are increased. In gravity casting, the cooling rate of hypereutectic composite is slower than of hypoeutectic composite by exothermic reaction of primary Si crystallization. But the cooling rate of hypereutectic composite is faster than that of hypoeutectic composite fabricated by same applied pressure, because amount of primary Si crystallization in hypereutectic composite was decreased, on the contrary, primary ${\alpha}-Al$ in hypoeutetic composite was increased due to increase of Si solubility in matrix by applied pressure. The crystalized primary silicon in hypereutectic composite fabricated by squeeze casting become more fine than that in non-pressure casting This is because mush zone became narrow due to increase of Si content of eutectic composition by pressure and time for growth of primary silicon got shorter according to applied pressure. It is turned out that eutectic temperature and liquidus are decreased by the increasing of squeeze pressure in all the composite due to thermal unstability of matrix owing to increasing of Si solubility in matrix by the increasing of applied pressure, as indicated in thermal anaiysis(DSC) results.

• Journal of the Microelectronics and Packaging Society
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• v.5 no.1
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• pp.7-18
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• 1998

In the flip chip interconnection on organic substrates using eutectic Pb/Sn solder bumps highly reliable Under Bump Metallurgy (UBM) is required to maintain adhesion and solder wettability. Various UBM systems such as 1$\mu$m Al/0.2$\mu$m Pd/1$\mu$m Cu, laid under eutectic Pb/Sn solder were investigated with regard to their interfacial reactions and adhesion proper-ties. The effects of numbers of solder reflow and aging time on the growth of intermetallic compounds (IMCs) and on the solder ball shear strength were investigated. Good ball shear strength was obtained with 1$\mu$m Al/0.2$\mu$m Ti/5$\mu$m Cu and 1$\mu$m Al/0.2$\mu$m ni/1$\mu$m Cu even after 4 solder reflows or 7 day aging at 15$0^{\circ}C$. In contrast 1$\mu$m Al/0.2$\mu$m Ti/1$\mu$m Cu and 1$\mu$mAl/0.2$\mu$m Pd/1$\mu$m 쳐 show poor ball shear strength. The decrease of the shear strength was mainly due to the direct contact between solder and nonwettable metal such as Ti and Al resulting in a delamination. In this case thin 1$\mu$m Cu and 0.2$\mu$m Pd diffusion barrier layer were completely consumed by Cu-Sn and pd-Sn reaction.

• Journal of Welding and Joining
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• v.32 no.6
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• pp.41-46
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• 2014

In this study, cracking susceptibility of laser cladding was investigated according to the processing parameters such as laser power, scan speed and feeding rate with blended powders of stellite#6 and technolase40s (WC+NiCr). The solidification microstructure of clad was composed of Co-based dendrite structures with ${\gamma}+Cr7C3$ eutectic phases at the dendritic boundaries. The crack propagation showed transgranular fracture along dendritic boundaries due to brittle chrome carbide at the eutectic phases. From results of fractography experiments, the fracture surface was typical cleavage brittle fracture in the clad and substrate. The number of clad cracks, caused by a tensile stress after the solidification, increased with increase of laser power, scan speed and feeding rate. Increase of the laser power caused large pores by facilitating WC decarburizing reaction. And the pores affected increase of crack susceptibility. High scan speed caused increment of clad cracks due to thermal stress and WC particle fractures. Also, increase of the feeding rate accompanied an amount of WC particles causing crack initiation and decarburizing reaction.

• Journal of the Korean Ceramic Society
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• v.27 no.1
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• pp.48-54
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• 1990

YBa2Cu3O7-x(=YBCO) single crystals were grown by flux method and the growing process of crystals was investigated. YBCO and 3BaO-7CuO composition powders were mixed by the ratio of 25 : 75(wt%), and the mixtures were melted at 105$0^{\circ}C$ in a electric furnace with no temperature-gradient. Then the melt was cooled at a rate 2-1$0^{\circ}C$/h in the above furnace. YBCO single crystal plate with average size of $1.5\times$2.0$\times$0.1㎣ were obtained in the cavities between crucible and solidified ingot, and the single crystals were oriented to <001> direction. The ingots of flux parts were analyzed by XRD and EDS for the purpose of presuming the growing process of the crystals. It was assumed that the divorced eutectic reaction, by which YBCO crystals were grown first and then BaCuO2 and CuO crystals, occured in the case of cooling rate faster than 2$^{\circ}C$/h. When the cooling rate was 2$^{\circ}C$/h, it was assumed that quasi-equilibrium eutectic reaction occured, so that YBCO, BaCuO2 and CuO crystals were grown at the same time.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.332-336
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• 2001

In this study, the reaction at UBM(Under Bump Metallurgy) and solder interface was investigated. The UBM employed in conventional optical packages, Au/Pt/Ti layer, were found to dissolve into molten Au-Sn eutectic solder during reflow soldering. Therefore, the reaction with different diffusion barrier layer such as Fe, Co, Ni were investigated to replace the conventional Pt layer. The reaction behavior was investigated by reflowing the solder on the pad of the metals defined by Cr layer for 1, 2, 3, 4, and 5 minutes at $330^{\circ}C$. Among the metals, Co was found to be most suitable for the diffusion barrier layer as the wettability with the solder was reasonable and the reaction rate of intermetallic formation at the interface is relatively slow.

• Journal of Powder Materials
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• v.4 no.3
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• pp.196-204
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• 1997

Joining of AIN ceramics to W and Cu by active-metal brazing method was tried with use of (Ag-Cu)-Ti alloy as insert-metal. Joints were produced under various conditions of temperature, holding time and Ti-content in (Ag-Cu) alloy Reaction and microstructural development in bonded interface were investigated through observation and analysis by SEM/EDS, EPMA and XRD. Joint strengths were measured by shear test. Bonded interface consists of two layers: an insert-metal layer of eutectic Ag- and Cu-rich phases and a reaction layer of TiN. Thickness of reaction layer increases with bonding temperature, holding time and Ti-content of insert-metal. It was confirmed that the growth of reaction layer is a diffusion-controlled process. Activation energy for this process was 260 KJ/mol which is lower than that for N diffusion in TiN. Maximum shear strength of 108 MPa and 72 MPa were obtained for AIN/W and AIN/Cu joints, respectively. Relationship between processing variables, joint strength and thickness of reaction layer was also explained.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.332-336
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• 2001

In this study, the reaction at UBM(Under Bump Metallurgy) and solder interface was investigated. The UBM employed in conventional optical packages, Au/Pt/Ti layer, were found to dissolve into molten Au-Sn eutectic solder during reflow soldering. Therefore, the reaction with different diffusion barrier layer such as Fe, Co, Ni were investigated to replace the conventional R layer. The reaction behavior was investigated by reflowing the solder on the pad of the metals defined by Cr layer for 1, 2, 3, 4, and 5 minutes at 330$^{\circ}C$. Among the metals, Co was found to be most suitable for the diffusion barrier layer as the wettability with the solder was reasonable and the reaction rate of intermetallic formation at the interface is relatively slow.