• Journal of IKEEE
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• v.25 no.1
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• pp.128-132
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• 2021

In this paper, the surface of electrodes used in solar cells was roughened using wet etching method among surface texturing method, and after surface treatment, dye sensitive solar cell using TiO2 oxide semiconductor was produced. The surface spectroscopic properties of surface treated electrodes were analyzed according to etching time, and by evaluating the electrical properties of TiO2 dye-sensitized solar cells produced according to etching time, the study on improving the efficiency of solar cells according to surface treatment was conducted. As a result, solar cells that etched the electrode surface for 10 minutes could see an improvement of about 27.46[%] over their existing efficiency.

• Journal of the Korean Vacuum Society
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• v.17 no.2
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• pp.113-116
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• 2008

As the integration in semiconductor display develops, semiconductor process becomes multilayer. In order to form several layer patterns, etching process which uses photoresistor (PR) must be performed in multilayer process. Repeated etching processes which take long time and PR residue cause mortal problems in semiconductor. To overcome such problems, we studied about the solution which eliminates PR effectively by using normal dry and wet etching method using plasma activated PR strip solvent in liquid condition. At first, we simulate the device which activates the plasma and make sure whether gas flow in device is uniform or not. Under activated plasma, etching effect is elevated. This improvement reduces etching time as well as display production time of semiconductor process. Generally, increasing etching process increases environmental hazards. Reducing etching process can save the etchant and protect environment as well.

• Restorative Dentistry and Endodontics
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• v.29 no.5
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• pp.430-438
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• 2004

This study evaluated the influence of application time of self-etching primers on microtensile bond strength (${\mu}$TBS) to dentin using three self-etching primer adhesive systems. Dentin surfaces were exposed from forty-eight human molars. They were conditioned with three self-etching primers (Clearfil SE Bond [SE], Unifil Bond [UF], Tyrian SPE + One Step Plus [TY]) and different primining times (10s, 20s, 30s and 40s). Composite resins were bonded to dentin surfaces and specimens were made. ${\mu}TBS$ was tested and statistically compared using by one-way ANOVA and Tukey's Test. The results of this study presented that priming time for 10s in SE and UF groups and for 30s and 40s in TY group was highly decreased ${\mu}TBS$ to dentin.

• Journal of the korean academy of Pediatric Dentistry
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• v.46 no.2
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• pp.165-172
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• 2019

The purpose of this study was to evaluate the effect of application time and phosphoric acid etching of 8th generation adhesives containing functional monomer on adhesive performance in primary teeth. 80 extracted non-carious human primary teeth were selected and divided into 8 groups based on 3 factors: (1) adhesive: G-Premio bond and Single bond universal; (2) application time: shortened time and manufacture's instruction; (3) acid etching mode: self-etching and total-etching. Shear bond strength was measured using a universal testing machine, and fractured surface were observed under scanning electron microscope. Microleakage was evaluated by dye penetration depth. G-Premio bond were not significant different in shear bond strength and microleakage depending on application time of adhesive and acid etching mode. In Single bond universal, shear bond strength of short application time was significantly lower than that of long adhesive application time (p = 0.014). Clinically applicable shear bond strength values (> 17 MPa) were identified in all groups. These results suggested that G-Premio bond be used clinically for a short application time without phosphoric acid etching.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2002.11a
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• pp.130-136
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• 2002

Device makers want to make higher density chips as devices shrink, especially WSix poly stack down is one of the key issues. However, EPD (End Point Detection) time delay was happened in DPS+ poly chamber which is a barrier to achieve device shrink because EPD time delay killed test pattern and next generation device. To investigate the EPD time delay, a test was done with patterned wafers. This experimental was carried out combined with OES(Optical Emission Spectroscopy) and SEM (Scanning Electron Microscopy). OES was used to find corrected wavelength in WSix stack down gate etching. SEM was used to confirm WSix gate profile and gate oxide damage. Through the experiment, a new wavelength (252nm) line of plasma is selected for DPS+ chamber to call correct EPD in WSix stack down gate etching for current device and next generation device.

• Journal of Electrical Engineering and information Science
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• v.2 no.5
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• pp.108-113
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• 1997

In this paper, the optimum condition of (110) Si etching with the potassium hydroxide(KOH) etchant is presented. Although several researches on (110) Si anisotropic etching have been studied, there has been lack of effects of mask quality and etching conditions on the selectivity and the roughness o the etched surface. Three kinds of masks (film, emulsion and E-beam mask) were used in order to verify the effect of etching properties. Anisotropic bulk etching depends on the crystalline orientation and the concentration and temperature of the etchant. In order to investigate the effect of etching conditions on selectivity and the roughness of the etched surface, the concentration of the etchant was varied from 35 to 45 per cent in weight with increments by 5 per cent and the temperature was changed from 70 to 90$^{\circ}C$ with increments by 10$^{\circ}C$. The combination of the temperature of 70$^{\circ}C$ and the concentration of 40wt.% was found to be the optimum etching condition for high selectivity. Etched surfaces show minimum surfaces show minimum surface roughness at a temperature of 80$^{\circ}C$ and a concentation of 40wt.%. Comb structures with various comb widths were fabricated and the lengths of the combs wree measured with several etching time durations. A micro comb structure 525$\mu\textrm{m}$ high was fabricated for MEMS application.

• Journal of Information Display
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• v.1 no.1
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• pp.52-58
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• 2000

We observed that static electricity has an influence on the etching unformity of dry etching process. When the static electricity was applied from-200[V]to-1000[V] on glass substrates, the etching rate uniformity was changed to 1.5%-15%. In this experiment, the soft X-ray to neutralize static electricity was adopted as ore of neutralization methods. As an experimental result, soft X-ray irradiation improved neutralization capability on the surface of LCD glass substrate within the short time, about 15-30sec. The difference of etching rate uniformity was below 0.5%.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2000.05a
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• pp.959-962
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• 2000

In this study, the micro shaft was fabricated by high speed etching process. The integration of the kinetic energy of circumference and the effect of etching takes less time to fabricate the micro shaft than any other conventional methods. First, the end part of the rod(SKD11) was dipped in chemical solution(FeCl$_3$) and the rod rotated at high speed(3500-10000rpm). Experimental setup was simply composed of high speed motor. chemical solution and $\Phi$ 1 mm rod. The main factors of diameter control are chemical concentration, reaction time and rpm. has a result. the diameter of the dipped rod was decreased by 200${\mu}{\textrm}{m}$ by high speed rotation and its shape and surface was good. From this experiment, we found the possibility to manufacture micro shaft without very expensive equipment.

• Current Photovoltaic Research
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• v.5 no.4
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• pp.105-108
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• 2017

The reactive ion etching (RIE) technology which enables nano-texturatization of surface is applied on monocrystalline silicon solar cell. The additional RIE process on alkalized textured surface further improves the blue response and short circuit current. Such parameter is characterized by surface reflectance and quantum efficiency measurement. By varying the RIE process time and matching the subsequent processes, the absolute efficiency gain of 0.13% is achieved. However, the result indicates potential efficiency gain could be higher due to process integration. The critical etch process time is discussed which minimizes both front surface reflectance and etching damage, considering the challenges of required system throughput in industry.

• Journal of the Semiconductor & Display Technology
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• v.16 no.4
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• pp.16-19
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• 2017

For the economical and environmental-friendly fabrication of polisher, Mo mask layer were sputtered on glass substrate instead of Cr mask material. Mo mask layers were sputtered by pulsed-DC sputtering and Photoresist patterns were formed on Mo mask layer for different develop times and optimized. After Mo mask layer were patterned and exposed glass was wet etched by HF solution for different etching times, the remaining Mo mask was stripped by using Al etchant. Develop time of 30 sec and HF wet etching time of 3 min were selected as optimized process condition and applied to the fabrication of polisher.