• 통합자연과학논문집
• /
• 제5권1호
• /
• pp.13-17
• /
• 2012

Changes of Fabry-Perot fringe patterns in porous silicon during etching process has been investigated. Four porous silicon samples were prepared with four different etch currents: (a) 10 $mA/cm^2$, (b) 30 $mA/cm^2$, (c) 50 $mA/cm^2$, (d) 100 $mA/cm^2$, respectively. Optical characterization of Fabry-Perot fringe pattern on porous silicon was achieved by Ocean optics 2000 spectrometer. The change of Fabry-Perot fringes was monitored and measured during the etching process. Fabry-Perot fringes pattern start to form after couple of minutes. As the etching time increased, more reflection peaks were observed. Its full width at half maximum (FWHM) decreased rapidly when the etching time increased.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 하계학술대회 논문집
• /
• pp.859-862
• /
• 2001

This study describes a selective Ag etching solution for use with pattern on the surface of copper. This etching solution uses potassium iodide and potassium sulfate as the ligand that coordinates to the metal ions and ferricyanide as the oxidant. The etching rate was depended on the concentration of co-ligands and time. But the etching rate wasn't depended on the pH(2∼6), and oxidant(K$_3$Fe(CN)$\_$6/). Complete etching of silver can be achieved rapidly within 90sec for 4.46${\mu}$m thick metal films when aqueous solutions containing K$_3$Fe(CN)$\_$6/, K$_2$S$_2$O$\_$8/ and KI was used. This etching solution was characteristic of anisotropic etching.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 1995년도 추계학술대회 논문집 학회본부
• /
• pp.338-341
• /
• 1995

The surface properties after plasma etching of Al(Si, Cu) solutions using the chemistries of chlorinated and fluorinated gases with varying the etching time have been investigated using X-ray Photoelectron Spectroscopy. Impurities of C, Cl, F and O etc are observed on the etched Al(Si, Cu) films. After 95% etching, aluminum and silicon show metallic states and oxized (partially chlorinated) states, copper shows Cu metallic states and Cu-Clx(x$CuCl_x$ (x$CuCl_x$ (1

• 반도체디스플레이기술학회지
• /
• 제22권4호
• /
• pp.131-135
• /
• 2023

Neural network-based time series models called time series neural networks (TSNNs) are trained by the error backpropagation algorithm and used to predict process shifts of parameters such as gas flow, RF power, and chamber pressure in reactive ion etching (RIE). The training data consists of process conditions, as well as principal components (PCs) of optical emission spectroscopy (OES) data collected in-situ. Data are generated during the etching of benzocyclobutene (BCB) in a SF₆/O₂ plasma. Combinations of baseline and faulty responses for each process parameter are simulated, and a moving average of TSNN predictions successfully identifies process shifts in the recipe parameters for various degrees of faults.

• 전기학회논문지
• /
• 제59권4호
• /
• pp.749-753
• /
• 2010

We investigated the haze and the surface roughness of textured Si substrates etched by $XeF_2$ etching system with the etching parameters of $XeF_2$ pressure, etching time, and etching cycle. Here the haze was obtained as a function of wavelength from the measured reflectance. The haze of textured Si substrates was strongly affected by the etching parameter of etching cycle. The surface roughness of textured Si substrates was calculated with the haze and the scalar scattering theory at the wavelength of 800 nm. Then, the surface roughness was compared with that measured by atomic force microscope. The surce roughness obtained by two methods was changed with the similar tendency n terms of $XeF_2$ etching conditions.

• 대한소아치과학회지
• /
• 제35권3호
• /
• pp.437-445
• /
• 2008

이 연구의 목적은 유전치 법랑질에서 무소주 법랑질 층이 있는 치경부에서의 적절한 산부식 시간을 알아보고자 함이다. 경희대학교 치과대학병원 소아치과에 내원한 환아에게서 발거한 치아 순면에 우식이 없는 건전한 치아 32개를 대상으로 실험하였다. 발거된 유전치의 치경부 법랑질을 35% 인산으로 실험 1군은 15초, 실험 2군은 30초, 실험 3군은 45초, 실험 4군은 60초간 산부식한 후 부식시간에 따른 법랑질 표면의 양상을 SEM으로 관찰하여 평가하였다. 1. 실험 1군에서는 Type 3가 75% 나타났으며 실험 2군과 3군 모두에서 Type 1이 38%, Type 2가 50%로 나타났다. 2. 실험 2군보다 실험 3군에서 산부식된 양상이 좀더 뚜렷하게 나타났다. 3. 실험 4군에서 Type 1이 25%, Type 2가 75%를 보였고 Type 3는 나타나지 않았다. 4. 실험 4군에서는 다른 실험군에서 보다 좀더 전형적인 산부식 양상을 보였다. 5. 실험군 간의 산부식 시간에 따른 부식 양상의 차이는 통계학적으로 유의한 차이를 보였다(p<0.05). 6. 산부식 시간이 길수록 부착에 유리한 Type 1과 Type 2가 주로 관찰되었으며 Type 3는 드물게 관찰되었다(p<0.05). 유전치에서 무소주 법랑질 층이 주로 존재하는 치경부 측에, 와동의 변연부가 형성될 때에는 산부식 시간을 다소 길게 $45{\sim}60$초 정도 하는 것이 수복물 유지를 향상시킬 것으로 여겨진다.

• Restorative Dentistry and Endodontics
• /
• 제24권1호
• /
• pp.240-250
• /
• 1999

The purpose of this study was to evaluate the effect of different etching time on the shear bond strength and adaptibility of composite to enamel and dentin when used one-bottle adhesive Prime & Bond$^{TM}$ 2.0. The proximal and occlusal surfaces of 88 extracted human molars were ground to expose enamel(n=44) and dentin (=44) using diamond wheel saw. Teeth were randomly assigned to four test groups(n=11) and received the following treatments : Control group were conditioned with 36% phosphoric acid for 20 sec. according to the manufacturer's directions. Experimental 10 sec. group, 30 sec. group and 60 sec. group were conditioned with 36% phosphoric acid for 10 sec., 30 sec. and 60 sec., respectively. Teeth were rinsed and dried for 2 sec. Prime & Bond$^{TM}$ 2.0 were applied according to the manufacturer's directions and Spectrum$^{TM}$ TPH composite resins were bonded to enamel and dentin surfaces. All specimens were stored in distilled water for 24 hours. Eighty specimens were sheared in a Universal Testing Machine with a crosshead speed of 5mm/minute. One way ANOVA and LSD test were used for statistical analysis of the data. Failure modes of all specimens after shear bond strength test were examined and listed. Also, representive postfracture modes and eight specimens were examined under scanning electron microscope. The results of this study were as follows: 1. The shear bond strength to enamel was the highest value in 30 sec. group (20.68${\pm}$8.54MPa) and the lowest value in 10 sec. group (14.92${\pm}$6.07MPa), so there was significant difference of shear bond strength between two groups (p<0.05). But there was no significant difference among other groups (p>0.05). With longer etching time to enamel from 10 sec. to 30 sec., higher the shear bond strength was obtained, but the shear bond strength was decreased at 60 sec. etching time. 2. The shear bond strength to dentin was the highest value in control group (13.08${\pm}$6.25MPa) and the lowest value in 60 sec. group (9.47${\pm}$3.35MPa), but there was no significant difference among the all groups (p>0.05). The eching time over 20 sec. decreased the shear bond strength to dentin. 3. In SEM observation, the enamel and resin interfaces were showed close adaptation with no relation to etching time of enamel. And the dentin and resin interfaces were showed close adaptation at 20 sec. and 30 sec. etching time, but showed some gaps at 10 sec. and 60 sec. etching time. Accordingly, these results indicated that a appropriate etching time in Prime & Bond$^{TM}$ 2.0 was required to be 30 sec. in enamel and 20 sec. in dentin for the high shear bond strength and good adaptation between the composite resin and tooth substance.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
• /
• pp.1252-1254
• /
• 2005

Recently, PDP barrier ribs require the formation of complex structure so that they are usually formed by etching method. For producing the fine ribs structure, during the etching process the metal ions of matrix (glass) of barrier materials should be understood on the etching mechanism with etching condition. We analyzed the quantity of Pb, Si, and B ions from the etch solution as a function of etching time.

• 제어로봇시스템학회:학술대회논문집
• /
• 제어로봇시스템학회 1997년도 한국자동제어학술회의논문집; 한국전력공사 서울연수원; 17-18 Oct. 1997
• /
• pp.664-667
• /
• 1997

For higher component density per chip, it is necessary to identify and control the semiconductor manufacturing process more stringently. Recently, neural networks have been identified as one of the most promising techniques for modeling and control of complicated processes such as plasma etching process. Since wafer states after each run using identical recipe may differ from each other, conventional neural network models utilizing input factors only cannot represent the actual state of process and equipment. In this paper, in addition to the input factors of the recipe, real-time tool data are utilized for modeling of 64M DRAM s-poly plasma etching process to reflect the actual state of process and equipment. For real-time tool data, we collect optical emission spectroscopy (OES) data. Through principal component analysis (PCA), we extract principal components from entire OES data. And then these principal components are included to input parameters of neural network model. Finally neural network model is trained using feed forward error back propagation (FFEBP) algorithm. As a results, simulation results exhibit good wafer state prediction capability after plasma etching process.

• 한국태양에너지학회:학술대회논문집
• /
• 한국태양에너지학회 2011년도 춘계학술발표대회 논문집
• /
• pp.111-115
• /
• 2011

Surface Texturing is an essential process for high efficiency in multi-crystalline silicon solar cell. In order to reduce the reflectivity, there are two major methods; proper surface texturing and anti-reflection coating. For texturization, wet chemical etching is a typical method for multi-crystalline silicon. The chemical solution for wet etching consists of HF, $NHO_3$, DI and $CH_3COOH$. We carried out texturization by the change of etching time like 15sec, 30sec, 45sec, 60sec and measured the reflectivity of textured wafers. As making the silicon solar cells, we obtained the conversion efficiency and relationship between texturing condition and solar cell characteristics. The reflectivity from 300nm to 1200nm was the lowest with 15 sec texturing time and 60 sec texturing time showed almost same reflectivity as bare one. The 45 sec texturing time showed the highest conversion efficiency.