• Journal of Ceramic Processing Research
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• v.20 no.1
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• pp.48-53
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• 2019

Carbon fiber reinforced SiC composites (C/SiC) have high-temperature stability and excellent thermal shock resistance, and are currently being applied in extreme environments, for example, as aerospace propulsion parts or in high-performance brake systems. However, their low thermal conductivity, compared to metallic materials, are an obstacle to energy efficiency improvements via utilization of regenerative cooling systems. In order to solve this problem, the present study investigated the bonding strength between carbon fiber and matrix material within ceramic matrix composite (CMC) materials, demonstrating the relation between the microstructure and bonding, and showing that the mechanical properties and thermal conductivity may be improved by treatment of the carbon fibers. When fiber surface was treated with a nitric acid solution, the observed segment crack areas within the subsequently generated CMC increased from 6 to 10%; moreover, it was possible to enhance the thermal conductivity from 10.5 to 14 W/m·K, via the same approach. However, fiber surface treatment tends to cause mechanical damage of the final composite material by fiber etching.

• Design & Manufacturing
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• v.15 no.4
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• pp.57-64
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• 2021

In recent materials industry, researches on the technology to manufacture super hydrophobic surface by effectively controlling the wettability of solid surface are expanding. Research on the fabrication of super hydrophobic surface has been studied not only for basic research but also for self-cleaning, anti-icing, anti-friction, flow resistance reduction in construction, textile, communication, military and aviation fields. A super hydrophobic surface is defined as a surface having a water droplet contact angle of 150 ° or more. The contact angle is determined by the surface energy and is influenced not only by the chemical properties of the surface but also by the rough structure. In this paper, maskless lithography using DMD, electro etching, anodizing and hot embossing are used to make the polymer resin PMMA surface super hydrophobic. In the fabrication of microstructure, DMDs are limited by the spacing of microstructure due to the structural limitations of the mirrors. In order to overcome this, maskless lithography using a transfer mechanism was used in this paper. In this paper, a super hydrophobic surface with micro and nano composite structure was fabricated. And the wettability characteristics of the micro pattern surface were analyzed.

• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.36 no.1
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• pp.45-53
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• 2000

To analyze the photodegradation mechanism of materials for fisheries facilities which stand for considerable time immediately under or even partly above the water surface, such as cage collar, cage net, stationary fishing gear, egc. after 900 hours exposure, weathering experiments on 3 kinds of netting twines like dyed polyethylene(PE) and nylon, and non-treated high strength PE(Hi-PE) were carried out by using xenon light source. The results obtained are as follows : It was observed by scanning electron micrograph(SEM) that a good protection by pigments was obtained in PE and nylon specimen, while crack was rapidly progressed at the surface of Hi-PE one owing to etching by UVR. There was a little increase in density resulting from reorientation of polymer chain, chain scission, etc. in Hi-PE specimen. A wide angle X-ray diffraction showed that 3 kinds of specimens had no fundamental changes in polymer crystalline structure considering each 2$\theta$ of diffraction peak. Remaining tenacity of netting twines was in order of PE, nylon, and Hi-PE after having been exposed to the effect of 900 hours. PE and nylon treated with stuffs were shown to be more resilient than non-treated Hi-PE as confirmed by SEM.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.38 no.6
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• pp.539-545
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• 2014

Contact resistivity between silver electrodes and the emitter layer of a silicon solar cell wafer has been measured using either the circular transmission line method or the linear transmission line method. The circular transmission line method has an advantage over the linear transmission line method, in that it does not require an additional process for mesa etching to eliminate the leakage current. In contrast, the linear transmission line method has the advantage that its specimen can be acquired directly from a silicon solar cell. In this study, measured resistance data for the calculation of contact resistivity is compared for these two methods, and the mechanism by which the linear transmission line method can more realistically reflect the impact of the width and thickness of a silver electrode on contact resistivity is investigated.

• ETRI Journal
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• v.35 no.3
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• pp.425-430
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• 2013

In this paper, we propose a triple-gate trench power MOSFET (TGRMOS) that is made through a modified RESURF stepped oxide (RSO) process, that is, the nitride_RSO process. The electrical characteristics of TGRMOSs, such as the blocking voltage ($BV_{DS}$) and on-state current ($I_{D,MAX}$), are strongly dependent on the gate configuration and its bias condition. In the nitride_RSO process, the thick single insulation layer ($SiO_2$) of a conventional RSO power MOSFET is changed to a multilayered insulator ($SiO_2/SiN_x/TEOS$). The inserted $SiN_x$ layer can create the selective etching of the TEOS layer between the gate oxide and poly-Si layers. After additional oxidation and the poly-Si filling processes, the gates are automatically separated into three parts. Moreover, to confirm the variation in the electrical properties of TGRMOSs, such as $BV_{DS}$ and $I_{D,MAX}$, simulation studies are performed on the function of the gate configurations and their bias conditions. $BV_{DS}$ and $I_{D,MAX}$ are controlled from 87 V to 152 V and from 0.14 mA to 0.24 mA at a 15-V gate voltage. This $I_{D,MAX}$ variation indicates the specific on-resistance modulation.

• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.1
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• pp.84-93
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• 2001

An electromagnetic micro x-y stage for probe-based data storage (PDS) has been fabricated. The x-y stage consists of a silicon body inside which planar copper coils are embedded, a glass substrate bonded to the silicon body, and eight permanent magnets. The dimensions of flexures and copper coils were determined to yield $100{\;}\mu\textrm{m}$ in x and y directions under 50 mA of supplied current and to have 440 Hz of natural frequency. For the application to PDS devices, electromagnetic stage should have flat top surface for the prevention of its interference with multi-probe array, and have coils with low resistance for low power consumption. In order to satisfy these design criteria, conducting planar copper coils have been electroplated within silicon trenches which have high aspect ratio ($5{\;}\mu\textrm{m}$in width and $30{\;}\mu\textrm{m}$in depth). Silicon flexures with a height of $250{\;}\mu\textrm{m}$ were fabricated by using inductively coupled plasma reactive ion etching (ICP-RIE). The characteristics of a fabricated electromagnetic stage were measured by using laser doppler vibrometer (LDV) and dynamic signal analyzer (DSA). The DC gain was $0.16{\;}\mu\textrm{m}/mA$ and the maximum displacement was $42{\;}\mu\textrm{m}$ at a current of 180 mA. The measured natural frequency of the lowest mode was 325 Hz. Compared with the designed values, the lower natural frequency and DC gain of the fabricated device are due to the reverse-tapered ICP-RIE process and the incomplete assembly of the upper-sided permanent magnets for LDV measurements.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.39 no.12
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• pp.1297-1303
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• 2015

The internal chromium plating of a long-axis tube is widely used in military and industrial application, with the thick hard plating formed using a mixed solution of Chromium acid and catalytic $H_2SO_4$. A large-caliber gun can endure a high explosive force as a result of the increased stiffness and wear resistance provided by this internal hard chromium surface. The internal chromium layer of a tube is prone to exfoliation caused by the high kinetic energy of the projectile and high pressure of the explosion. Therefore, we reviewed the plating process. Chromium plating comprises many steps, including the removal of Grease, water cleaning, electrolytic abrasion, etching, plating, water cleaning, and hydrogen brittleness removal. The exfoliated chromium plating layer is affected by the adhesion property of the plating. In particular, the Fe concentration of the electrolyte affects the adhesion property. The optimum Fe concentration for effectively suppressing the exfoliation of the plating layer was established by using a scanning electron microscope to determine the surface roughness, and the effectiveness was proved in an adhesion test, etc.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.62-62
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• 2015

In this study, we study the effects of CF4 plasma treatment on the characteristics of enhancement mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs). The CF4 plasma is generated by inductively coupled plasma reactive ion etching (ICP-RIE) system. The CF4 gas is decomposed into fluorine ions by ICP-RIE and then fluorine ions will effect the AlGaN/GaN interface to inhibit the electron transport of two dimension electron gas (2DEG) and increase channel resistance. The CF4 plasma method neither like the recessed type which have to utilize Cl2/BCl3 to etch semiconductor layer nor ion implantation needed high power to implant ions into semiconductor. Both of techniques will cause semiconductor damage. In the experiment, the CF4 treatment time are 0, 50, 100, 150, 200 and 250 seconds. It was found that the devices treated 100 seconds showed best electric performance. In order to prove fluorine ions existing and CF4 plasma treatment not etch epitaxial layer, the secondary ion mass spectrometer confirmed fluorine ions truly existing in the sample which treatment time 100 seconds. Moreover, transmission electron microscopy showed that the sample treated time 100 seconds did not have etch phenomena. Atomic layer deposition is used to grow Al2O3 with thickness 10, 20, 30 and 40 nm. In electrical measurement, the device that deposited 20-nm-thickness Al2O3 showed excellent current ability, the forward saturation current of 210 mA/mm, transconductance (gm) of 44.1 mS/mm and threshold voltage of 2.28 V, ION/IOFF reach to 108. As IV concerning the breakdown voltage measurement, all kinds of samples can reach to 1450 V.

• Korean Journal of Optics and Photonics
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• v.8 no.4
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• pp.327-332
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• 1997

We fabricated the high speed 1.55${\mu}{\textrm}{m}$ distributed feedback laser diodes (DFB-LD) using both two-step mesa etching process and semi-insulating InP current blocking layers. The devices characteristics were threshold current of ~15mA, slope efficiency of ~0.13mW/mA, and dynamic resistance of ~6.0Ω, with as-cleaved facets. The fabricated DFB-LD showed the single longitudinal mode with more than 40dB up to 6 $I_{th}$(CW condition), emitting at the wavelength of 0.546${\mu}{\textrm}{m}$. The -3dB bandwidth was >10㎓ at the driving current of 27mA, and the maximum -3dB bandwidth was ~18㎓ at 90 mA current, showing the superior frequency response of SI-PBH DFB-LD. In the 10Gb/s transmission experiment for 1.55${\mu}{\textrm}{m}$ DFB-LD module, maximum 10 km of single mode fiber(SMF) or 80 km of dispersion shifted fiber (DSF) could be transmitted with error free.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.23 no.4
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• pp.161-166
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• 2013

AlN buffer layers have been used for the growth of GaN layers on Si substrates. However, the doping of high concentration of carriers into AlN layers is still not easy, therefore it may cause the increase of series resistance when it is used for the electrical or optical devices. In this work, to improve such a problem, the growth of GaN layers on Si substrates were performed using metal buffer layers instead of AlN buffer layer. We tried combinations of Ti, Al, Cr and Au as metal buffer layers for the growth of GaN on Si substrates. Surface morphology was measured by optical microscope and scanning electron microscope (SEM), and optical properties and crystalline quality were measured by photoluminescence (PL) and X-ray diffractometer (XRD), respectively. Electrical resistances for both cases of AlN and metal buffer layer were compared by current-voltage (I-V) measurement.