• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.210-210
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• 2011

The effects of CH2F2 and N2 gas flow rates on the etch selectivity of silicon nitride (Si3N4) layers to extreme ultra-violet (EUV) resist and the variation of the line edge roughness (LER) of the EUV resist and Si3N4 pattern were investigated during etching of a Si3N4/EUV resist structure in dual-frequency superimposed CH2F2/N2/Ar capacitive coupled plasmas (DFS-CCP). The flow rates of CH2F2 and N2 gases played a critical role in determining the process window for ultra-high etch selectivity of Si3N4/EUV resist due to disproportionate changes in the degree of polymerization on the Si3N4 and EUV resist surfaces. Increasing the CH2F2 flow rate resulted in a smaller steady state CHxFy thickness on the Si3N4 and, in turn, enhanced the Si3N4 etch rate due to enhanced SiF4 formation, while a CHxFy layer was deposited on the EUV resist surface protecting the resist under certain N2 flow conditions. The LER values of the etched resist tended to increase at higher CH2F2 flow rates compared to the lower CH2F2 flow rates that resulted from the increased degree of polymerization.

• Journal of Sensor Science and Technology
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• v.9 no.5
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• pp.334-340
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• 2000

This paper presents the fabrication of a micro electromagnetic flow sensor for the liquid flow rate measurement. The micro electromagnetic flow sensor has some advantages such as a simple structure, no heat generation, a rapid response and no pressure loss. The principle of the micro electromagnetic flow sensor is based on Faraday's law. If conductive fluid passes through a magnetic field, the electromotive force is generated and detected by two electrodes on the wall of the flow channel. The flow sensor consists of two permanent magnets and a silicon flow channel with two electrodes. The dimension of the flow sensor is $9\;mm\;{\times}\;9\;mm\;{\times}\;1\;mm$. The micro flow channel is mainly fabricated by anisotropic etching of two silicon wafers, and the detection electrodes are fabricated by metal evaporation process. The characteristic of the fabricated flow sensor is obtained experimentally. When the flow rates of water with the conductance of $100-200\;{\mu}S/cm$ are 9.1 ml/min and 62 ml/min, the generated electromotive forces are $261\;{\mu}V$ and 7.3 mV, respectively.

• Journal of Korean Society for Atmospheric Environment
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• v.26 no.6
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• pp.690-696
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• 2010

Abatement of perfluorocompounds (PFCs) used in semiconductor and display industries has received an attention due to the increasingly stricter regulation on their emission. In order to meet this circumstance, we have developed a radio frequency (RF) driven plasma reactor with multiple annular shaped electrodes, characterized by an easy installment between a processing chamber and a vacuum pump. Abatement experiment has been performed with respect to $CF_4$, a representative PFCs widely used in the plasma etching process, by varying the power, $CF_4$ and $O_2$ flow rates, $CF_4$ concentration, and pressure. The influence of these variables on the $CF_4$ abatement was analyzed and discussed in terms of the destruction & removal efficiency (DRE), measured with a Fourier transform infrared (FTIR) spectrometer. The results revealed that DRE was enhanced with the increase in the discharge power and pressure, but dropped with the $CF_4$ flow rate and concentration. The addition of small quantity of $O_2$ lead to the improvement of DRE, which, however, leveled off and then decreased with $O_2$ flow rate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.171-174
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• 2002

The barium strontium titannate (BST) thin films were etched in $CF_{4}/Ar$ inductively coupled plasma (ICP). The high etch rate obtained at a $CF_{4}(20%)/Ar(80%)$ and the etch rate in pure argon was twice higher than that in pure $CF_{4}$. This indicated that BST etching is sputter dominant process. It is impossible to avoid plasma-induced damages by the energetic particles in the plasma and the nonvolatile etch products. The plasma damages were evaluated in terms of leakage current density, residues on the etched sample, and the changes of roughness. After the BST thin films exposed in the plasma, the leakage current density and roughness increases. In addition, there are appeared a nonvolatile etch byproductsand from the result of X-ray photoelectron spectroscopy (XPS). After annealing at ${600^{\circ}C}$ for 10 min in $O_{2}$ ambient, the increased leakage current density, roughness and nonvolatile etch byproducts reduced. From the this results, the plasma induced damage recovered by annealing process owing to the relaxation of lattice mismatches by Ar ions and the desorption of metal fluorides in high temperature.

• Journal of the Korean Society for Precision Engineering
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• v.31 no.6
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• pp.483-489
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• 2014

In this study, experiments were conducted for micro pattern printing to combine solution atomization process and stencil printing based on electrospray deposition. The stencil mask fabricated by etching the photosensitive glass placed below 0.3 mm distance to substrate has 100 um line width. The process parameters of electrospray deposition system for the atomization of the solution are applied voltage and supply flow rate of the solution. Meniscus angle of cone-jet was optimized by varying the supply flow rate from 0.3 ml/hr to 0.7 ml/hr. Voltage condition was verified having symmetric cone-jet angle and no pulsation at 8.5 kV applied voltage. In addition, a number of micro patterns are printed using a single 1 step process by solution atomization process. Variable line width of approximate 100 um was confirmed by changing conditions of solution atomization regardless of the pattern size of stencil mask.

• Journal of the Korean institute of surface engineering
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• v.42 no.4
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• pp.157-160
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• 2009

Many fundamental studies have been carried out regarding waste water and hazardous gas treatments technologies using the photolysis effect of $TiO_2$. However, a permanent use of $TiO_2$ particles immobilized using organic or organic-inorganic binders is impossible. In this study, Ni-$TiO_2$ composite coating was produced by electroless plating to trap $TiO_2$ particles in the Ni coating layer. The electroless plating was performed in the bath solutions with three different concentrations of $TiO_2$ particles : 10 g/l, 20 g/l, and 40 g/l. The surface and photolytic characteristics of the coating layer was investigated by the use of SEM, a scratch tester, and an UV-Visible spectrophotometer. The results showed that the amounts of immobilized $TiO_2$ particles and the photolytic rate of the coating increased with the initial content of $TiO_2$ particles in the electroless bath. In addition, the photolytic rate of the Ni-$TiO_2$ composite coating was remarkably promoted by etching process in 10% HCl solution.

• Korean Journal of Materials Research
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• v.16 no.12
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• pp.731-738
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• 2006

It is seriously considered using Al CMP (chemical mechanical planarization) process for the next generation 45 nm Al wiring process. Al CMP is known that it has a possibility of reducing process time and steps comparing with conventional RIE (reactive ion etching) method. Also, it is more cost effective than Cu CMP and better electrical conductivity than W via process. In this study, we investigated 4 different kinds of slurries based on abrasives for reducing scratches which contributed to make defects in Al CMP. The abrasives used in this experiment were alumina, fumed silica, alkaline colloidal silica, and acidic colloidal silica. Al CMP process was conducted as functions of abrasive contents, $H_3PO_4$ contents and pressures to find out the optimized parameters and conditions. Al removal rates were slowed over 2 wt% of slurry contents in all types of slurries. The removal rates of alumina and fumed silica slurries were increased by phosphoric acid but acidic colloidal slurry was slightly increased at 2 vol% and soon decreased. The excessive addition of phosphoric acid affected the particle size distributions and increased scratches. Polishing pressure increased not only the removal rate but also the surface scratches. Acidic colloidal silica slurry showed the highest removal rate and the lowest roughness values among the 4 different slurry types.

• Korean Journal of Crystallography
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• v.5 no.2
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• pp.51-66
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• 1994

Y3Al5O2 and Nd: Y3Al5012 single crystals were grown by Czochralskl technique. The effectt of pulling rate rotation rate, and doping level of Nd3+ ion on the crystal quality were studied Various types of defects were analysed by photo-elastic effect and chemical etching method Finally, spectroscopic and laser poputies of grown crystal were measured. Optirmum pulling rate for good quality was dependant on the doping level of Nd3+ ion. It was found that the suitable pulling rates for pure Y3Al5O12 for 3.0∼3.5 a/o Nd3+ ion doped Y3Al5012 and for more than 40 a/o Nd3+ ion doped Y3Al5012 were 2∼4mm/hr, 0.6∼0.5mm/hr, and less than 0.4mm/hr respectively. Solid-liquid interface was convex at the rotation rate of 27∼60rpm, and concave at the rotation rate of 80∼100rpm. Growth axis was confired to <111> direction and lattice parameter was measured to 12.017A. Core (211) facets,striations, inclusions of metal particles, dislocations and optical inhonngeneities were detected. Four level laser transition of Nd3+ion in YIAls012 single crystal were identified by the spectroscopic measurements. Laser rod with tam diameter and 63mm length was fabricated from grown Nd3+ Y3Al5012 sin91e crystals. 1.8lJ of lasing threshould and 0.49% of soope efficiency were measured by the Pulsed laser action.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.7
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• pp.17-25
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• 1999

Tungsten nitride($WN_x$) films were deposited by PECVD method on silicon nitride($WSi_3N_4$) substrate. The characteristics of $WN_x$ film were investigated with changing various processing parameters ; substrate temperature, gas flow rate, rf power, and different nitrogen sources. The nitrogen composition in $WN_x$ film varied from 0 to 45% according to the $NH_3$ and $N_2$ flow rate. The highest deposition rate of 160 nm/min was obtained for the $NH_3$ gas and relatively low deposition rate of $WN_x$ films were formed by $N_2$ gas. $WN_x$ films deposited on $WSi_3N_4$ substrate had higher deposition rate than that of TiN and Si substrates. The purity of $WN_x$ film were analyzed by AES and higher purity $WN_x$ films were deposited using $NH_3$ gas. The XRD analysis indicates a phase transition from polycrystalline tungsten(W) to amorphous tungsten nitride($WN_x$), showing improved etching profile of $WN_x$ films Thick $WN_x$ films were deposited on various substrates such as Tin, NiCr and Al and maximum thickness of $1.6 {\mu}m$ was obtained on the Al adhesion layer.

• Journal of the Korean Vacuum Society
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• v.15 no.6
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• pp.630-636
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• 2006

Scale down of semiconductor gate pattern will make progress centrally line width into transistor according to the high integration and high density of flash memory semiconductor. Recently, the many researchers are in the process of developing research for using the ONO(oxide-nitride-oxide) technology for the gate pattern give body to line breadth of less 100 nm. Therefore, etch rate and etch profile of the line width detail of less 100 nm affect important factor in a semiconductor process. In case of increasing of the platen power up to 50 W at the ICP etcher, etch rate and PR selectivity showed good result when the platen power of ICP etcher has 100 W. Also, in case of changing of HBr gas flux at the platen power of 100 W, etch rate was decreasing and PR selectivity is increasing. We founded terms that have etch rate 320 nm/min, PR selectivity 3.5:1 and etch slope have vertical in the case of giving the platen power 100 W and HBr gas 35 sccm at the ICP etcher. Also notch was not formed.