• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.369-369
• /
• 2012

The present work deals with selective deposition of copper on fluoropolymers patterned silicon (111) surfaces. The pattern of fluoropolymer was fabricated by nanoimprint lithography (NIL) and plasma reactive ion etching (RIE) was used to remove the residuals layers. Copper was electrochemically deposited in bare Si regions which were not covered with fluoropolymers. The patterns of fluoropolymers and copper have been investigated by scanning electron microscopy (SEM). In this work, we used two deposition methods. One is galvanic displacement method and another is electrodeposition. Selective deposition works in both cases and it shows applicability to other materials. By optimization of the deposition conditions can be achieved therefore this process represents a simple approach for a direct high resolution patterning of silicon surfaces.

• Journal of Sensor Science and Technology
• /
• v.3 no.1
• /
• pp.19-25
• /
• 1994

When etching rectangular convex corners of silicon using anisotropic etchants such as KOH, deformation of the edges always occurs due to undercutting. Therefore, it is necessary to correct the mass pattern for compensation. Experiments for the compensation method to prevent this phenomenon were carried out. In the result, the compensation pattern of a regular square is suitable for acceleration sensors considering space. With this consequence, silicon piezoresistive acceleration sensor with compensated square pillar type of mass has been fabricated using SDB wafer.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
• /
• 2001.10a
• /
• pp.349-354
• /
• 2001

In this study, we investigated the effect of the impacting ang1e of particles, the scanning times and the stand-off distance on the surface roughness and the weight-loss rate of samples with no mask, and the wall profile and overetching of samples with different mask pattern in powder blasting of soda-lime glass. The varying parameters were the different impact angles between 50$^{\circ}$ and 90$^{\circ}$, scanning times of nozz1e up to 40 and the stand-off distances 70mm and 100mm. The widths of mask pattern were 0.2mm, 0.5mm and 1mm. The powder was alumina sharp particles, WA#600. The mass flow rate of powder during the erosion test was fixed constant at 175g/min and the blasting pressure of powder at 0.2MPa

• Laser Solutions
• /
• v.3 no.3
• /
• pp.13-19
• /
• 2000

The stencil is a thin stainless sheet in which a pattern is formed, which is placed on a surface of plate to reproduce the pattern of electric circuit. Conventionally the stencil has been produced by etching process. This process has many anti-environmental factors. In this study, Nd : YAG laser cutting process has been applied for stencil manufacturing. The study is focused on estimating kerf width of laser cut stencil by E.B.P.(Error Back-Propagation). This algorithm is good for estimating target value from input value. In this paper, target value was kerf width, and input values were frequency, pulse width, cutting speed and laser power. E.B.P. after teaming input and target could estimate kerf width from some variables precisely.

• Journal of the Semiconductor & Display Technology
• /
• v.19 no.3
• /
• pp.55-60
• /
• 2020

The hard mask photo-resist strip inspection system for the semiconductor wafer manufacturing process inspects the position of the circuit pattern formed on the wafer by measuring the distance from the edge of the wafer to the strip processing area. After that, it is an inspection system that enables you to check the process status in real time. Process defects can be significantly reduced by applying a tester that has not been applied to the existing wafer strip process, edge etching process, and wafer ashing process. In addition, it is a technology for localizing semiconductor process inspection equipment that can analyze the outer diameter of the wafer and the state of pattern formation, which can secure process stability and improve wafer edge yield.

• Proceedings of the Optical Society of Korea Conference
• /
• 2006.07a
• /
• pp.469-471
• /
• 2006

This paper describes a efficient insepction method of PCB PADs for AFVI. The methods for PCB inspection have been tried to detect the defects in PCB PADs, but their low detection rate results from pattern variations that are originating from etching, printing and handling processes. The adaptive inspection method has been newly proposed to extract minute defects based on dynamic segments and filters. The vertexes are extracted from CAM master images of PCB and then a lot of segments are constructed in master data. The proposed method moves these segments to optimal directions of a PAD contour and so adaptively matches segments to PAD contours of inspected images, irrespectively of various pattern variations. It makes a fast, accurate and reliable inspection of PCB patterns. Experimental results show that proposed methods are found to be effective for flexible defects detection.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.33A no.6
• /
• pp.114-119
• /
• 1996

The use of holographic interference lithography and removal techniques to corrugate GaAs substrate have been studied. The periodic photoresist structure, which serves as a protective mask during etching, is holographically prepared. Subsequently periodic V-grooved pattern is formed on the GaAs substrate by conventional a H$_{2}$SO$_{4}$-H$_{2}$O$_{2}$-H$_{2}$O wet etching. The linewidth of a GaAs pattern is about 0.4$\mu$m and the depth is 0.5$\mu$m A quantum wires(QWRs) array is well formed on the V-grooved substrate by MOCVD (metalorganic chemical vapor deposition) growth of GaAs/Al$_{0.5}$Ga$_{0.5}$As (50$\AA$/300$\AA$) quantum wells. The formation of QWR array is confirmed by the temperature dependent photoluminescence (PL) measurement. The intensive PL peak with a FWHM of 6meV at 21K shows the high quality of the QWR array.

• Analytical Science and Technology
• /
• v.22 no.3
• /
• pp.247-253
• /
• 2009

Porous silicon films are electrochemically etched from crystalline silicon wafers in an aqueous solution of hydrofluoric acid(HF). Careful control of etching conditions (current density, etch time, HF concentration) provides films with precise, reproducible physical parameters (morphology, porosity and thickness). The etched pattern could be varied due to (1) current density controls pore size (2) etching time determines depth and (3) complex layered structures can be made using different current profiles (square wave, triangle, sinusoidal etc.). The optical interference spectrum from Fabry-Perot layer has been used for forensic applications, where changes in the optical reflectivity spectrum confirm the identity. We will explore a method of identifying the specific pattern code and can be used for identities of individual code with porous silicon based encoded nanosized smart particles.

• Journal of Dental Rehabilitation and Applied Science
• /
• v.22 no.2
• /
• pp.149-159
• /
• 2006

Statement of problem. Porcelain repair mainly involves replacement with composite resin, but the bond strength between composite resin and all-ceramic coping materials has not been studies extensively. Purpose. The objective of this study was to investigate the influence of composite resin and ceramic etching pattern on shear bond strength of Empress2 ceramic and observe the change of microstructure of ceramic according to etching methods. Material and methods. Eighty-five cylinder shape ceramic specimens (diameter 5mm, IPS Empress 2 core materials) embeded by acrylic resin were used for this study. The ceramic were specimens divided into sixteen experimental groups with 5 specimens in each group and were etched with phosphoric acid(37%, 65%) & hydrofluoric acid (4%, 9%) according to different etching times(30s, 60s, 120s 180s). All etched ceramic surfaces were examined morphologically using SEM(scanning electron microscopy). Etched surfaces of ceramic specimens were coated with silane (Monobond-S) & adhesive(Heliobond) and built up composite resin using Teflon mold. Accomplished specimens were tested under shear loading until fracture on universal testing machine at a crosshead speed 1mm/min; the maximum load at fracture(kg) was recorded. Shear bond strength data were analyzed with one way ANOVA and Duncan tests.(P<.05) Results. Maximum shear bond strength was $30.07{\pm}2.41(kg)$ when the ceramic was etched with 4% hydrofluoric acid at 120s. No significant difference was found between phosphoric etchant group and control group with respect to shear bond strength. Conclusion. Empress 2 ceramic surface was not etched by phosphoric acid, but etched by hydrofluoric acid.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2015.08a
• /
• pp.142.2-142.2
• /
• 2015

Plasma etch endpoint detection (EPD) of SiO2 and PR layer is demonstrated by plasma impedance monitoring in this work. Plasma etching process is the core process for making fine pattern devices in semiconductor fabrication, and the etching endpoint detection is one of the essential FDC (Fault Detection and Classification) for yield management and mass production. In general, Optical emission spectrocopy (OES) has been used to detect endpoint because OES can be a simple, non-invasive and real-time plasma monitoring tool. In OES, the trend of a few sensitive wavelengths is traced. However, in case of small-open area etch endpoint detection (ex. contact etch), it is at the boundary of the detection limit because of weak signal intensities of reaction reactants and products. Furthemore, the various materials covering the wafer such as photoresist (PR), dielectric materials, and metals make the analysis of OES signals complicated. In this study, full spectra of optical emission signals were collected and the data were analyzed by a data-mining approach, modified K-means cluster analysis. The K-means cluster analysis is modified suitably to analyze a thousand of wavelength variables from OES. This technique can improve the sensitivity of EPD for small area oxide layer etching processes: about 1.0 % oxide area. This technique is expected to be applied to various plasma monitoring applications including fault detections as well as EPD.