• Journal of the Korean Vacuum Society
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• v.1 no.1
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• pp.37-42
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• 1992

Abstract-The ECR(E1ectron Cyclotron Resonance) plasma etcher was developed for process of manufacturing 16M164' DRAM and applied to poly-Si etching process. The etching rate and selectivity of poly-Si were investigated by changing the process factor of pressure gas and microwave power. The increasing power of microwave will have the trend of increasing the etching rate and selectivity of Oxide, and have suitable value process pressure at 6 mTorr. The increasing value of process gas SFdSF6+ Clz will cause the decrease of etching rate and selectivity, this is because the best process factor is not found.

• Proceedings of the KACD Conference
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• 2003.11a
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• pp.625-625
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• 2003

I. Objectives Self-etching primer adhesive system is affected to dentin surface conditioning and priming. Especially application time of self-etching primer is very important factor of clinical procedure which has direct influence on smear layer, etching reaction and primer penetration to dentin. This study evaluated the influence of application time of self-etching primers on microtensile bond strength (${\mu}{\;}TBS$) to dentin using three self-etching primer adhesive systems.(omitted)

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.160-160
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• 2008

In practical etching process, etch ant is sprayed on the metal-deposited panel through nozzles collectively connected to the manifold and that panel is usually composed of many PCB(printed circuit board)'s. The etching uniformity, the difference between individual PCB's on the same panel, has become one of most important features of etching process. In this paper, the prediction of nozzle trajectory has been performed by the combination of algebraic formula and numerical simulation. With the pre-determined geometrical factors of nozzle distribution, the trajectories of individual nozzles were predicted with the change of process operational factors such as panel speed, nozzle swing frequency and so on. As results, two dimensional distribution of impulsive force of etchant spray which could be considered as a key factor determining the etching performance have been successfully obtained. Though only qualitative prediction of etching uniformity have been predicted by the process developed in this study, the expansion to the quantitative prediction of etching uniformity is expected to be apparent by this study.

• Journal of Sensor Science and Technology
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• v.24 no.1
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• pp.10-14
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• 2015

This paper reports the results of a study on the optimization of the etching profile, which is an important factor in deep-reactive-ion etching (DRIE), i.e., dry etching. Dry etching is the key processing step necessary for the development of the Internet of Things (IoT) and various microelectromechanical sensors (MEMS). Large-area etching (open area > 20%) under a high-frequency (HF) condition with nonoptimized processing parameters results in damage to the etched sidewall. Therefore, in this study, optimization was performed under a low-frequency (LF) condition. The HF method, which is typically used for through-silicon via (TSV) technology, applies a high etch rate and cannot be easily adapted to processes sensitive to sidewall damage. The optimal etching profile was determined by controlling various parameters for the DRIE of a large Si wafer area (open area > 20%). The optimal processing condition was derived after establishing the correlations of etch rate, uniformity, and sidewall damage on a 6-in Si wafer to the parameters of coil power, run pressure, platen power for passivation etching, and $SF_6$ gas flow rate. The processing-parameter-dependent results of the experiments performed for optimization of the etching profile in terms of etch rate, uniformity, and sidewall damage in the case of large Si area etching can be summarized as follows. When LF is applied, the platen power, coil power, and $SF_6$ should be low, whereas the run pressure has little effect on the etching performance. Under the optimal LF condition of 380 Hz, the platen power, coil power, and $SF_6$ were set at 115W, 3500W, and 700 sccm, respectively. In addition, the aforementioned standard recipe was applied as follows: run pressure of 4 Pa, $C_4F_8$ content of 400 sccm, and a gas exchange interval of $SF_6/C_4F_8=2s/3s$.

• Journal of the Optical Society of Korea
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• v.18 no.3
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• pp.283-287
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• 2014

Square lattice nano-hole arrays with diameters and periodicities of 200 and 500 nm, respectively, are fabricated on InGaN/GaN blue light emitting diodes (LEDs) using electron-beam lithography and inductively coupled plasma reactive ion etching processes. Cathodoluminescence (CL) investigations show that light emission intensity from the LEDs with the nano-hole arrays is enhanced compared to that from the planar sample. The CL intensity enhancement factor decreases when the nano-holes penetrate into the multiple quantum wells (MQWs) due to the plasma-induced damage and the residues. Wet chemical treatment using KOH solution is found to be an effective method for light extraction from the nano-patterned LEDs, especially, when the nano-holes penetrate into the MQWs. About 4-fold CL intensity enhancement factor is achieved by the KOH treatments after the dry etching for the sample with a 250-nm deep nano-hole array.

• Journal of Technologic Dentistry
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• v.39 no.4
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• pp.243-251
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• 2017

Purpose: The purpose of this study was to investigate the effects of etching by monitoring the etched surfaces and the shear bonding strength of resin and porcelain with etched zirconia. Methods: The CAD/CAM was used to produce 24 zirconia blocks in groups of six. The zirconia specimen surfaces were sandblasted, and they were then divided into 12 specimens with surface etching and 12 specimens without etching for the control group. 12 specimens of composite resin were bonded using a curing light, and 12 specimens of porcelain underwent vita porcelain build-up sintering and the shear bonding strength was measured using a universal testing system. The SEM photographs were taken in order to observe any differences in the surfaces before and after etching, and they were magnified by a factor of 8 in order to observe fractured surface types. Results: The results of the shear bonding strength measurements are as follows: For the composite resin tests, between zirconia and resin, the shear bonding strength of the control group (NZR) without surface etching was 4.68 Mpa and the experimental group (EZC) with surface etching was 9.65 Mpa, which is significantly higher. The crystal structure of the zirconia was confirmed to be different in observations of the surfaces before and after etching. Conclusion : In comparing the shear bonding strength of zirconia and composite resin, the effects of etching were found to be significant. The effects of surface etching were also observed in fractured surfaces between zirconia and porcelain. This is expected to be applicable to various prosthetics as surface etching on zirconia is used in clinics.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.72.2-72.2
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• 2010

Nowadays, the crystalline Si Solar cell are expected for economical renewable energy source. The cost of the crystalline Si solar cell are decreasing by improvement of its efficiency and decrease of the cost of the raw Si wafers for Solar cells. This Si wafer based crystalline Si solar cell is the verified technology from several decade of its history. Now, I will introduce one method that can be upgrade the efficiency by using simple and economical method. The name of this method is Rear Side Etching(RSE). The purpose of rear side etching is the elimination of n+ layer of rear side and increase of the flatness. The effects of rear side etching are the improvement of Voc and increase of efficiency by reducement series resistance and forming of uniform BSF. The experimental procedure for rear side etching is very simple. After anti-reflection coating on solar cell wafer, Solar cell wafer is etched by the etching chemical that react with only rear side not front side. This special chemical is no harmful to anti-reflection coating layer. It can only etched rear side of solar cell wafer. We can use etching image by optical microscope, minority carrier life time by WCT 120, SiNx thickness and refractive index by ellipsometer, cell efficiency for the RSE effect measurement. The key point of rear side etching is development of etching process condition that react with only rear side. If we can control this factor, we can achieve increase of solar cell efficiency very economically without new device.

• Journal of Powder Materials
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• v.28 no.4
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• pp.317-324
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• 2021

High-strength low-alloy (HSLA) steels show excellent toughness when trace amounts of transition elements are added. In steels, prior austenite grain size (PAGS), which is often determined by the number of added elements, is a critical factor in determining the mechanical properties of the material. In this study, we used two etching methods to measure and compare the PAGS of specimens with bainitic HSLA steels having different Nb contents These two methods were nital etching and picric acid etching. Both methods confirmed that the sample with high Nb content exhibited smaller PAGS than its low Nb counterpart because of Nb's ability to hinder austenite recrystallization at high temperatures. Although both etching approaches are beneficial to PAGS estimation, the picric acid etching method has the advantage of enabling observation of the interface containing Nb precipitate. By contrast, the nital etching method has the advantage of a very short etching time (5 s) in determining the PAGS, with the picric acid etching method being considerably longer (5 h).

• Electrical & Electronic Materials
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• v.10 no.5
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• pp.481-486
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• 1997

This paper describes the anisotropic etching characteristics of Si in acqueous TMAH/IPA solutions. The etch rates of (100) oriented Si crystal planes decrease with increasing TMAH concentration and IPA concentration. Etchant concentration and etch temperature have a large effect on hillock density. Hillock density strongly increase with lower TMAH concentration and higher etch temperature. The etched (100) planes are covered by pyramidal-shaped hillocks below TMAH 15 wt.%, but very smooth surface is obtained TMAH 25 wt.%. The addition of IPA to TMAH solution leads to smoother surfaces of sidewalls etched planes. Undercutting ratio of pure TMAH solution is much higher than KOH. But, addition of IPA to TMAh the underrcutting ratio reduces by a factor of 3∼4. Therefore, acqueous TMAH/IPA solution is able to use as anisotropic etchant of Si because of full compability with IC fabrication process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.2
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• pp.152-155
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• 2011

Even though nano-scale materials were very advantageous for various applications, there are still problems to be solved such as the stabilization of surface state and realization of low contact resistances between a semiconducting nanowire and electrodes in nano-electronics. It is well known that the effects of contacts barrier between nano-channel and metal electrodes were dominant in carrier transportation in individual nano-electronics. In this report, it was investigated the electrical properties of GaN nanorod devices after chemical etching and rapid thermal annealing for making good contacts. After KOH wet-etching of the contact area the devices showed better electrical performance compared with non-treated GaN individual devices but still didn't have linear voltage-current characteristics. The shape of voltage-current properties of GaN devices were improved remarkably after rapid thermal annealing as showing Ohmic behaviors with further bigger conductivities. Even though chemical etching of the nanorod surfaces could cause scattering of carriers, in here it was shown that the most important and dominant factor in carrier transport of nano-electronics was realization of low contact barrier between nano-channel and metal electrodes surely.