• Proceedings of the KIEE Conference
• /
• 1996.07c
• /
• pp.1550-1552
• /
• 1996

Poly-Si films were deposited by Laser CVD using 193nm ArF Excimer Laser from disilane($Si_{2}H_{6}$) and then the films were etched by Laser Etching using the same Laser with SF6 etching gas. Dependence on various film deposition conditions and etching conditions was investigated respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.11a
• /
• pp.124-125
• /
• 2005

ZnS:Mn thin films have attracted great interest as electroluminescence devices. In this study, inductively coupled BCl$_3$/Ar plasma was used to etch ZnS:Mn thin films. We obtained the maximum etch rate of ZnS:Mn thin films was 2209 ${\AA}$/min at a BCl$_3$(20%)/Ar(80%) gas mixing ratio, an RF power of 700 W, a DC bias voltage of-250 V, a total gas flow of 20 sccm, and a chamber pressure of 1 Pa. It was proposed that sputter etching is dominant etching mechanism while the contribution of chemical reaction is relatively low due to low volatility of etching products.

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2015.11a
• /
• pp.180-181
• /
• 2015

본 논문에서는 ICP Poly Etcher를 이용한 Dry Etch에서 몇가지 공정조건의 변화에 따른 Etching 특성 변화를 연구하였다. 주요 가스유량들이 증가 할 때, Poly-Si 의 Etch rate는 증가 하였으며 Uniformity는 나빠진 것을 확인 할 수 있었고 다른 특성들은 특별한 변화를 보이지 않았다. 주요 Gas인 HBr의 증가는 PR(Photo Resist)와 Uniformity에 영향을 주었다. 이 논문을 통해 HBr의 유량이 Poly-Si Etching에 영향을 주는 결과를 알아 볼 수 있었고 HBr 가스의 유량 증가가 Polymer의 생성에 영향을 줘 Selectivity와 Uniformity를 증가 시킨다는 것도 확인 해 볼 수 있었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1996.11a
• /
• pp.334-337
• /
• 1996

Si anisotropic etching is a key technology for micromachining. The main advantages of tetramethyl ammonium hydroxide (TMAH)-based solution are their full compatibility with IC process. In this work the anisotropic etching of single crystal Si in a TMAH (($CH_3$)$_4$NOH) based solution was studied. The influence of the addition of IPA to TMAH solution on their etching characteristics was also presented. The crystal planes bounding the etch front and their etch rates were determined as a function of temperature, crystal orientation, and etchant concentration. The etch rates of (100) oriented Si crystal planes decreased linearly with increasing the IPA concentration, The etched (100) planes were covered by Pyramidal-shaped hillocks below 15 wt.%, but very smooth surfaces were obtained above 20 wt.%. The addition of IPA to TMAH solution leads to smoother surfaces of sidewalls etched planes.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.16 no.4
• /
• pp.286-291
• /
• 2003

(Pb,Sr)TiO$_3$(PST) thin films have attracted great interest as new dielectric materials of capacitors for Gbit dynamic random access memories. In this study, inductively coupled CF$_4$/Ar plasma was used to etch PST thin films. The maximum etch rate of PST thin films was 740 $\AA$/min at a CF$_4$(20 %)/Ar(80 %) 9as mixing ratio, an RF power of 800 W, a DC bias voltage of -200 V, a total gas flow of 20 sccm, and a chamber pressure of 15 mTorr. To clarify the etching mechanism, the residue on the surface of the etched PST thin films was investigated by X-ray photoelectron spectroscopy. It was found that Pb was mainly removed by physically assisted chemical etching. Sputter etching was effective in the etching of Sr than the chemical reaction of F with Sr, while Ti can almost removed by chemical reaction.

• Electrical & Electronic Materials
• /
• v.7 no.5
• /
• pp.425-429
• /
• 1994

In this paper, we study on the plasma polymerized styrene as a negative electron-beam resist. Plasma polymerized thin film was prepared using an interelectrode inductively coupled gas-flow type reactor. We show that polymerization parameters of thin film affect sensitivity and etching resistance of the resist. Molecular weight distribution of plasma polymerized styrene is 1.41-3.93, and deposition rates of that are 32-383[.angs./min] with discharge power. Swelling and etching resistance becomes . more improved with increasing discharge power during plasma polymerization. Etch rate by RIE is higher than that by plasma etching.

• 연구논문집
• /
• s.23
• /
• pp.29-43
• /
• 1993

Photoetching of AISI 304 stainless steel in ferric chloride solution has been studied. This paper investigated on the single side etching characteristics of 304 stainless steel, especially influence of etching temperature, spray pressure of ferric chloride etchant, and etching time with $50\mum$ and $75\mum$ line width photomask.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.39 no.1
• /
• pp.31-38
• /
• 2002

In order to improve the 0.35 $mutextrm{m}$-via hole etching process the etching characteristic of the gas $C_2F_{6}$ has been analyzed. The samples were triple-layer films(TEOS/SOG/TEOS) on 8-inch wafers and the orthogonal array matrix technique was used for the process. The equipment for etching was the transformer coupled plasma (TCP) source which is a type of high density plasma(HDP). This experiment showed the etching rate for $C_2F_{6}$ was 0.8 $mutextrm{m}$/min-1.1 $mutextrm{m}$/min and the measured uniformity was under $pm$6.9% in the matrix window. The CD skew comparison between pre and post-etching was under 10% which is an outstanding results in the window of profile in anisotropic etching. There was no problem in C2F6 with the flow rate of 20sccm, but when 14sccm of $C_2F_{6}$ was supplied there was a recess problem on the inner wall of SOG film. Consequently the etching characteristic of $C_2F_{6}$ shows a fast etching rate and a very wide process window in HDP TCP.

• Journal of the Semiconductor & Display Technology
• /
• v.2 no.4
• /
• pp.37-40
• /
• 2003

We have studied micro-machining technologies to fabricate parts and sensors used in the semiconductor equipment. The studies were based on the silicon integrated circuit processes, and composed of the anisotropic etching of single crystal silicon to fabricate a membrane structure for hot and cold junctions in the infrared absorber. KOH and TMAH were used as etching solutions for the anisotropic wet etching for membrane structure formation. The etching characteristic was observed for the each solution, and etching rate was measured depending upon the temperature and concentration of the etching solution. The different characteristics were observed according to pattern directions and etchant concentration. The pattern was made to incline $45^{\circ}$ on the primary flat, and optimum etching property was obtained in the case of 30 wt% and $90^{\circ}C$ of KOH etching solution for the formation of the membrane structure.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2010.05a
• /
• pp.695-696
• /
• 2010