• Restorative Dentistry and Endodontics
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• v.34 no.1
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• pp.38-41
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• 2009

When we use the total-etch dentin adhesive system for composite resin restorations, gel or liquid acid etchant such as 37% phosphoric acid is commonly used. Thirty seven percentage phosphoric acid is very powerful erosive agent, and can cause severe harmful effects when it contacts with an oral mucosa and facial skin. This case describes iatrogenic chemical burn on facial skin caused by phosphoric acid which was happened during composite resin restorative procedure. Chemical burn by acid etchant can be evoked by careless handling of remnant and syringe. In order to prevent these iatrogenic injuries, we should check the complete removal of the etching agent both in intra and extra-oral environments after etching and rinsing procedure and it is necessary to use of the rubber dam or isolation instruments. If accidental burn were occurred. immediate wash with copious water. And bring the patient to the dermatologist as soon as possible.

• Korean Chemical Engineering Research
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• v.50 no.2
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• pp.211-216
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• 2012

Wet chemical etching of stainless steel foil by aqueous ferric chloride solution was investigated in this study. Effects of various process parameters (e.g. etchant agitation rate, etchant temperature, $Fe^{3+}$ ion concentration, free HCl concentration, specific gravity, etc.) on the etch rate was first studied, and it was found that the etch rate of AK (aluminum-killed) steel, chromium metal and stainless steel (STS430J1L alloy) follows the pseudo-first order reaction equation. When the fatigue ratio of etchant was kept under 16%, sludge was not formed in the solution, and the etched surface showed smooth roughness. The etch rate decreases as Baume of etchant increases, but the effect of free HCl concentration on the etch rate turned out to be minimal. Experimental data were compared with the calculated results from modeled equation, showing very good agreement.

• Journal of the Korea Safety Management & Science
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• v.14 no.1
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• pp.155-165
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• 2012

This essay talks about research of robust design for quality improvement of production procedure of Wet Etchant. It suggested the optimum design method in consideration of specific capability value that is the way to maximize the quality of product in the production system by using Daguchi parameter design method while finding factors affecting product quality with analysis of production system of product A from producer D. Also, it set long term of 6months as noise factor and let it to be the robust design that can find the optimum condition of control factor that is dull to the changes of each month, that is the change in noise factor. The control factor which affects the product quality is decided as combination method, temperature of raw material, combination time and as there are too many possibilities for combination methods, we performed 4 methods first based on previous research data then derived three ways with product that passed SPEC and set as the factor. As a result of application of optimum production procedure suggested in this essay to the actual production process with its standardization, there was a effect of drop of more than 10particles in comparison to the particle number of previous product and also it brought the effect that resulted the stable number of particle of under 30 that is what the client company suggested.

• Clean Technology
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• v.15 no.3
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• pp.165-171
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• 2009

In this study, we found out the relation between $FeCl_3$ recovering-concentration and stage number of extraction process for invar (Fe+Ni) etching process. In order to get the desired $FeCl_3$ recovering-concentration economically, we developed the simulation program for designing the optimal $FeCl_3$ extraction process. We got the key parameter for this simulation program through pilot scale experiments. The process simulation by the developed program could reduce the emission of waste etching solution as well as the treatment costs. In addition, the developed program could calculate the number of stage of the etchant recovering system and the process time to get the desired concentration of $FeCl_3$. This program was used to compute the optimal capacity of the etchant recovering system and applied to the optimization of the stage of the etchant recovering system in real IT industry.

• Restorative Dentistry and Endodontics
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• v.46 no.3
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• pp.36.1-36.11
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• 2021

Objectives: This study aimed to evaluate Emblica officinalis (Indian gooseberry or amla) as an acid etchant and matrix metalloproteinase (MMP) inhibitor, and to compare its effect on the microshear bond strength of composite resin with orthophosphoric acid (OPA) and 2% chlorhexidine (CHX) as an acid etchant and MMP inhibitor, respectively. Materials and Methods: The etching effect and MMP-inhibiting action of amla on dentin samples were confirmed by scanning electron microscopy (SEM) and gelatin zymography, respectively. Dentinal slabs (3 mm thick) from 80 extracted human molars were divided into 10 and 20 samples to form 2 control groups and 3 experimental groups. Groups 1, 2, and 4 were etched with OPA and groups 3 and 5 with amla juice. An MMP inhibitor was then applied: CHX for group 2 and amla extract for groups 4 and 5. Groups 1 and 3 received no MMP inhibitor. All specimens received a standardized bonding protocol and composite resin build-up, and were subjected to microshear bond strength testing. The force at which the fracture occurred was recorded and statistically analyzed. Results: Amla juice had a similar etching effect as a self-etch adhesive in SEM and 100% amla extract was found to inhibit MMP-9 by gelatin zymography. The microshear bond strength values of amla were lower than those obtained for OPA and CHX, but the difference was not statistically significant. Conclusions: Amla has a promising role as an acid etchant and MMP inhibitor, but further studies are necessary to substantiate its efficacy.

• Journal of the Korean Vacuum Society
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• v.11 no.4
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• pp.249-255
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• 2002

For a formation of membrane structures, single crystal silicon wafers have been anisotropically etched with solutions of KOH and KOH-IPA. The etching rate was observed to be strongly dependent upon the etchant temperature and concentration. Mask patterns for the etching experiment was aligned to incline $45^{\circ}$on the primary flat of the silicon wafer. The different etching characteristics were observed according to pattern directions and etchant concentration. When the KOH concentration was fixed to 20 wt%, the U-groove etching shape was observed for the etching temperature of above $80^{\circ}C$, and V-groove shapes observed at below $80^{\circ}C$. Hillocks, which were generated at the etched silicon surfaces, has been decreased as the increasing of the etchant temperature and concentration.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.263-263
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• 2011

본 연구에서는 DBD (Dielectric Barrier Discharge)방식의 상압 플라즈마를 이용하여 FPD (flat panel display) 공정에 사용되는 a-Si, Si3N4의 식각 공정 특성을 평가하였다. 사용된 DBD 반응기는 기존의 blank planar plate 형태의 Power가 인가되는 anode 부분과 Dielectric Barrier 사이 공간을 액상의 도전체로 채워 넣은 형태의 전극이 사용 하였으며, 인가 Power는 40kHz AC 최대인가 전압 15 kVp를 사용 하였다. 방전 가스는 N2, 반응가스로는 CDA (Clean Dry Air)와 NF3, 액상의 Etchant를 사용 하였으며 모든 공정은 In-line type으로 시편을 처리 하였다. NF3의 경우 30 mm/sec 이송속도 1회 처리 기준 a-Si 1300${\AA}$, Si3N4 1900${\AA}$의 식각 두께를 보였으며 a-Si : Si3N4 선택비는 N2, CDA의 조절을 통하여 최대 1:2에서 4:1 정도까지 변화가 가능하였다. 균일도는 G2 (370 mm${\times}$470 mm)의 경우 5.8 %의 균일도를 보이고 있다. 이외에도 NF3 공정의 경우 실제 TFT-LCD 공정 중 n+ channel (n+ a-Si:H)식각 공정에 적용하여 5.5 inch LCD panel feasibility를 확인 할 수 있었다. 액상 Etchant (HF수용액, NH4HF2)는 버블러를 사용하여 기화 시켜 플라즈마 소스를 통해 1차적으로 활성화 시키고 기존 DBD 반응기에 공급해 주는 형태로 평가를 진행하였다. 식각 특성은 30mm/sec 이송속도에서 a-Si $25{\AA}$ 정도로 가스 형태의 Etchant에 비해 매우 낮은 수준이나 Etching rate 향상을 위한 factor 파악 및 개선을 위한 연구를 진행 하였다.

• Journal of Korean Dental Science
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• v.5 no.1
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• pp.37-44
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• 2012

Purpose: Among the facilitation of tooth movement in adult orthodontic treatment methods, surgical approaches are gaining popularity but complications following mechanical bone reduction are a problem. In this study, tooth movement was observed after alveolar bone was chemically demineralized to verify whether tooth movement had been facilitated. Materials and Methods: Twelve rabbits were used. In the experimental group, the alveolar bone of the left first molar area was exposed and demineralized. Thirty seven percents phosphoric acid was applied for 5 minutes for demineralization. The opposite first molar area was used as control. Two teeth were pulled with 200 g force and 4 rabbits each were sacrificed at 3, 7, and 14 days after the force was applied. Histologic examination was done with hematoxylin and eosin and tartrate-resistant acid phosphatase staining. Result: The histologic examination results revealed more bone resorption in the demineralized area. As time passed, the number of osteoclasts increased in the compressed area. The amount of tooth movement was larger in the experimental group compared to the control group but the difference was not statistically significant. Conclusion: The demineralization with etchant resulted in limited bone resorption, more tooth movement and less damage of the cementum after applied orthodontic force.

• Journal of Electrical Engineering and information Science
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• v.2 no.5
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• pp.108-113
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• 1997

In this paper, the optimum condition of (110) Si etching with the potassium hydroxide(KOH) etchant is presented. Although several researches on (110) Si anisotropic etching have been studied, there has been lack of effects of mask quality and etching conditions on the selectivity and the roughness o the etched surface. Three kinds of masks (film, emulsion and E-beam mask) were used in order to verify the effect of etching properties. Anisotropic bulk etching depends on the crystalline orientation and the concentration and temperature of the etchant. In order to investigate the effect of etching conditions on selectivity and the roughness of the etched surface, the concentration of the etchant was varied from 35 to 45 per cent in weight with increments by 5 per cent and the temperature was changed from 70 to 90$^{\circ}C$ with increments by 10$^{\circ}C$. The combination of the temperature of 70$^{\circ}C$ and the concentration of 40wt.% was found to be the optimum etching condition for high selectivity. Etched surfaces show minimum surfaces show minimum surface roughness at a temperature of 80$^{\circ}C$ and a concentation of 40wt.%. Comb structures with various comb widths were fabricated and the lengths of the combs wree measured with several etching time durations. A micro comb structure 525$\mu\textrm{m}$ high was fabricated for MEMS application.

• Electrical & Electronic Materials
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• v.10 no.5
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• pp.481-486
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• 1997

This paper describes the anisotropic etching characteristics of Si in acqueous TMAH/IPA solutions. The etch rates of (100) oriented Si crystal planes decrease with increasing TMAH concentration and IPA concentration. Etchant concentration and etch temperature have a large effect on hillock density. Hillock density strongly increase with lower TMAH concentration and higher etch temperature. The etched (100) planes are covered by pyramidal-shaped hillocks below TMAH 15 wt.%, but very smooth surface is obtained TMAH 25 wt.%. The addition of IPA to TMAH solution leads to smoother surfaces of sidewalls etched planes. Undercutting ratio of pure TMAH solution is much higher than KOH. But, addition of IPA to TMAh the underrcutting ratio reduces by a factor of 3∼4. Therefore, acqueous TMAH/IPA solution is able to use as anisotropic etchant of Si because of full compability with IC fabrication process.