• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.6
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• pp.261-264
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• 2012

In this paper, we investigated characteristics of etching induced surface morphology variation by wet etching of GaN epilayer were grown on sapphire (0001) substrate by hydride vapor phase epitaxy (HVPE). As a results of scanning electron microscope (SEM) observation, three types of hexagonal etch pits (Edge, Screw, Mixed) were formed by the GaN epilayer thickness variations. A lot of etch pits, attributed to screw and mixed type TD, were observed at thinner epilayer, leading to high etch pit density. On the other hand, the thickness of GaN epilayer increased with the number of etch pits corresponding to edge and mixed dislocations, which are the majority of TDs are observed.

• Journal of the Korean institute of surface engineering
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• v.30 no.1
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• pp.44-56
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• 1997

Influence of electrochemical etching conditions on capacitance gain of aluminium electrolytic on capacitor foil has been investigated by etching cubic textured high purity aluminum foil in dilute hydrochloric acid. Uniformly distributed etch pit tunnels on aluminum surface have been obtained by pretreatment aluminium foil in 10% NaOH solution for 5 minutes followed by electrochemical etching. Electrostatic capacitance of etched aluminium foil anodized to high voltage increased with the increase of current density, total charge, temperature and concentration of electrolyte up to maximum CV-value and then deceased. Election optical observation of the etched foil revealed that the density of etch of etch pits increased with the increase of current density and concentration of electrolyte. this increase of etch pit density enlarged of the increase of capacitance. However, abnormal high current density and high electrolyte concentration induced the local dissolution of the foil surface which resulted the decrease of foil capacitance.

• Korean Journal of Materials Research
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• v.10 no.5
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• pp.369-374
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• 2000

In order to investigate the effects of addition of 1M sulfuric acid to the etching solution or 1M hydrochloric acid on the etching behavior of aluminum foil for electrolytic capacitors, the changes in the density of etch pit, the length and diameter of etch tunnels and the capacitance were analyzed using SEM, TEM, LCR meter etc. Sulfate ion as a corrosion inhibitor was contributed to the increase of the surface area comparing with chloride ion. By adding sul-furic acid the density of etch pit and the length of etched tunnel increased and the diameter of the tunnel decreased, resulting in the increase of capacitance. It was also shown that the capacitance decreased when the current density was below $0.9A/\textrm{cm}^2$, while remarkably increased in the other case.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.4
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• pp.560-566
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• 1997

Dislocation behavior in the ZnSe crystal grown by seeded vapor transport was investigated. Etch pit shape with the ZnSe plane and dislocation arrangement were shown. Also the variation of the dislocation density in the crystal was disclosed. The dislocation density along the lateral growth direction was not changed but the dislocation density along the vertical growth direction was reduced as the crystal grew. The average dislocation density of the grown crystal was $4{\times}10^4 /\textrm{cm}^2$.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.223.1-223.1
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• 2013

Since sapphire single crystal is one of the materials that have excellent mechanical and optical properties, the single crystal is widely used in various fields, and the demand for the use of substrate of LED devices is increasing rapidly. However, crystal defects such as dislocations and stacking faults worsen the properties of the single crystal intensely. When sapphire wafer of single crystal is used as LED substrate, especially, crystal defects have a strong influence on the characteristics of a film deposited on the wafer. In such a case quantitative assessment of the defects is essential, and the evaluation technique is now becoming one of the most important factors in commercialization of sapphire wafer. Wet etching is comparatively easy and accurate method to estimate dislocation density of single crystal because etching reaction primarily takes place where dislocations reached crystal surface which are chemically weak points, and produces etch pit. In the present study, the formation behavior of etch pits and etching time dependence were studied systematically. Etch pit density(EPD) analysis using optical microscope was also conducted and measurement uncertainty of EPD was studied to confirm the reliability of the results. EPDs and measurement uncertainties for 4 inch sapphire wafers were analyzed in terms of 5 and 21 points EPD readings. EPDs and measurement uncertainties in terms of 5 points readings for 4 inch wafers were compared by 2 organizations. We found that the average EPD value in terms of 5 points readings for a 4 inch sapphire wafer may represent the EPD value of the wafer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.407-408
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• 2005

High surface area electrodes for aluminum electrolytic capacitors are produced by AC electrochemical processes. Optimization of crystallographic etch pit growth on aluminium during AC etching of cathode film for aluminium as electrolytic capacitor has been established. In this work, we present the observations of pit distributions by galvanostatic measurements. The effects of electrolyte concentration, current density, frequency, various pre-treatments and etching time have been studied. The specimen was pretreated in 0.5M NaOH and 1M HCl at $40\sim60^{\circ}C$, and transferred into a cell containing 1M HCl, then various mol $H_2SO_4$ etchant was added. Pit size distributions were determined with scanning electron microscopy (SEM).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.4
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• pp.344-349
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• 2006

A sublimation epitaxial method, referred to as the Closed Space Technique (CST) was adopted to produce thick SiC epitaxial layers for power device applications. We aimed to systematically investigate the dependence of SiC epilayer quality and growth rate during the sublimation growth using the CST method on various process parameters such as the growth temperature and working pressure. The etched surface of a SiC epitaxial layer grown with low growth rate $(30{\mu}m/h)$ exhibited low etch pit density (EPD) of ${\sim}2000/cm^2$ and a low micropipe density (MPD) of $2/cm^2$. The etched surface of a SiC epitaxial layer grown with high growth rate (above $100{\mu}m/h$) contained a high EPD of ${\sim}3500/cm^2$ and a high MPD of ${\sim}500/cm^2$, which indicates that high growth rate aids the formation of dislocations and micropipes in the epitaxial layer. We also investigated the Schottky barrier diode (SBD) characteristics including a carrier density and depletion layer for Ni/SiC structure and finally proposed a MESFET device fabricated by using selective epilayer process.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.3
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• pp.454-462
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• 1998

Mechanisms and conditions for rounding of AUC particles were examined during AUC precipitation. Rounding of AUC particle was possible only by external circulation using pump, not by internal circulation using agitator. The rate of AUC rounding $(dn_p/dt)$ was proporational to operation conditions such as magma density $(M_t:g-U/{\iota}l)$, turn over ratio $(T_o)$ and impeller tip velocity of pump (U); $ dn_p/dt{\propto}M_t{\cdot}T_o{\cdot}U^2$. The validity of this relationship was qualitatively confirmed by comparing the expermental results. Two rounding mechanisms were suggested. One is crack formation mechanism and the other etch-pit formation mechanism on the surface of AUC particle. It was found that the crack formation is more dominant at the initial stage and the etch-pit formation at the final stage of the AUC precipitation.

• Journal of the Semiconductor & Display Technology
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• v.2 no.2
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• pp.5-8
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• 2003

In this study, as Cu diffusion barrier, tantalum nitrides were successfully deposited on Si(100) substrate and $SiO_2$ by plasma assisted atomic layer deposition(PAALD) and thermal ALD, using pentakis (ethylmethlyamino) tantalum (PEMAT) and NH$_3$ as precursors. The TaN films were deposited at $250^{\circ}C$ by both method. The growth rates of TaN films were 0.8${\AA}$/cycle for PAALD and 0.75${\AA}$/cycle for thermal ALD. TaN films by PAALD showed good surface morphology and excellent step coverage for the trench with an aspect ratio of h/w -1.8:0.12 mm but TaN films by thermal ALD showed bad step coverage for the same trench. The density for PAALD TaN was 11g/cmand one for thermal ALD TaN was 8.3g/$cm^3$. TaN films had 3 atomic % carbon impurity and 4 atomic % oxygen impurity for PAALD and 12 atomic % carbon impurity and 9 atomic % oxygen impurity for thermal ALD. The barrier failure for Cu(200 nm)/TaN(10 nm)/$SiO_2$(85 nm)/ Si structure was shown at temperature above $700^{\circ}C$ by XRD, Cu etch pit analysis.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.338-339
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• 2005

The wider surface of the aluminum foil, electrochemically very important and it is necessary to increase the surface area. A study has been made of the fabrication condition for etching cube texture of high purity aluminium foil and of electrochemical etching of the aluminium foil. In the present work, it is shown there exists a relation between the influence of the pre-treatment time in the NaOH & HCI solution and $H_2SO_4$ concentration in the conversion solution. Also effect of temperature during AC etching was also studied. Result of the etched aluminum film is shown in the typical SEM images. Its electrochemical characteristics were investigated by cyclic voltammetry. And effects of current density and frequency is also reported. Cyclic voltammogram showed that the protective oxide film was formedon the inner surfaces of etch pit. the frequency influence resistance of oxide film in AC etching.