• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2002.11a
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• pp.14-19
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• 2002

In this study, as Cu diffusion barrier, tantalum nitrides were successfully deposited on Si(100) substrate and SiO2 by plasma assisted atomic layer deposition(PAALD) and thermal ALD, using pentakis (ethylmethlyamino) tantalum (PEMAT) and $NH_3$ as precursors. The TaN films were deposited on $250^{\circ}$C by both method. The growth rates of TaN films were $0.8{\AA}$/cycle for PAALD and $0.75{\AA}$/cycle for thermal ALD. TaN films by PAALD showed good surface morphology and excellent step coverage for the trench with an aspect ratio of h/w - $1.8 : 0.12 \mu\textrm{m}$ but TaN films by thermal ALD showed bad step coverage for the same trench. The density for PAALD TaN was $11g/\textrm{cm}^3$ and one for thermal ALD TaN was $8.3g/\textrm{cm}^3$. TaN films had 3 atomic % carbon impurity and 4 atomic % oxygen impurity for PAALD and 12 atomic % carbon impurity and 9 atomic % oxygen impurity for thermal ALD. The barrier failure for Cu(200nm)/TaN(l0nm)/$SiO_2(85nm)$/Si structure was shown at temperature above $700^{\circ}$C by XRD, Cu etch pit analysis.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.6
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• pp.394-399
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• 2000

Langasite (LGS) is a material hoped to meet needs required of new base materials for future communication devices (e.g.SAW filters). In this study, synthesis of new materials was pursued by developing new compounds with the host structure of Langasite in hopes to obtain materials with improved characteristics; compounds including $La_3$$Ta_{0.5}$$Ga_{5.5}$$O_{14}$(LTG)and $La_3$$Nb_{0.25}$$Ta_{0.25}$$Ga_{5.5}$$O_{14}$(LNTG) were synthesized by solid state reactions. Characteristics of the compound synthesized in question were determined. The single crystals of Langasite-type were grown using the Czochralski method. The growth conditions for LTG and LNTG were studied and were found to be similar to those of LGS. The growth characteristics of LNTG were observed by studying etch pit formation density along the crystal length.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.464-467
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• 1999

The undoped-InSe and Sn-doped InSe single crystals were grown by vertical Bridgman method and their properties were invesigated. The orientations and the crystallinites of these crystals were identified by X-ray diffraction(XRD), double crystal rocking curve(DCRC) and etch-pit density(EPD) measurements. From the Raman spectrum at room temperature, TO, LO modes and together with their overtones and combinations were observed. Optical properties were inves ated by PL at 12K and direct band gap of these crystals obtained from optical absorption spectrum. Compared with undo&-InSe, electrical properties of Sn-doped InSe were increased and the electrical conductivity type were n-type. But electrical properties along growth direction of crystals and radial direction of wafer showed nearly uniform distribution. The Zn diffusion mechanism in InSe could be explained by interstitial-substitutional and vacancy complex models and the activation energy of 1.15-3.01eV were needed for diffusion.fusion.

• Journal of the korean academy of Pediatric Dentistry
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• v.32 no.2
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• pp.321-331
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• 2005

The purpose of this study was to compare the effectiveness of mechanical and acid treatment on enamel surfaces for the retention of pit and fissure sealants and evaluate the presence of a prismless layer. The etch pattern produced on enamel from immature and mature premolar teeth extracted with varying period of acid etching using 37% phosphoric acid was examined using a scanning electron microscope(SEM). The composition of each groups was evaluated using an energy dispersive x-ray(EDX) spectroscopy. The result of present study can be summarized as follows: 1. Prismless layer was commonly observed on the fissure enamel in young and mature premolar. 2. There were no differences in micro-structure and etching pattern on fissure enamel between the young and the mature premolar. 3. The most effective etching pattern for retention of pit and fissure sealant was observed in 60 seconds of etching time and no apparent difference of etching pattern was found among 15, 30, and 45 seconds of etching time which showed non-retentive etching patterns. 4. The etching pattern obtained by grinding enamel surface with bur followed by 60 seconds of etching was similar to that of 60 seconds of etching without any pretreatment of fissure surface. 5. Type 2 etching pattern was commonly found on fissure enamel in both young and mature premolar. 6. The calcium content and P/Ca ratio in fissure enamel between the young and the mature premolar were significantly different(P<0.05). But content of calcium, phosphate and P/Ca ratio on various regions of fissure enamel in both young and mature premolar did not showed any difference. Based on these results, prismless layer may negatively influence the retention of pit and fissure sealants. Therefore, the mechanical removal of the prismless layer by grinding prior to etching or by prolonged etching time of enamel within the fissure system should result in an improved bonding of a pit and fissure sealant.

• Journal of the Mineralogical Society of Korea
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• v.5 no.2
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• pp.109-121
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• 1992

For the purpose of mineralogical and chemical study on the topazes from various localities of world(Brzail, China, India, Nigeria and Sri Lanka), electron microprobe analysis(EPMA), neutron activation analysis(NAA), X-ray diffractometry, Raman spectroscopy, etch test, scanning electron microscopy, refractive index, specific gravity, fluid inclusion were performed. The chemical composition in topaz was discussed along with its physical and structural properties. Variations in the unit-cell dimension and physical properties of topaz were found to have a close relations in the unit-cell dimension and physical properties of topaz were found to have a close relationship with extent of substitution of $OH^-\;for\;F^-$. According to neutron activation analyses, the trace elements had no effects on the physical properties of topaz. Raman spectra showed that the peaks of topaz were different in intensity from one locality to another. Etching defects in topaz includes negative crystal defect o point-bottom pit(India, Nigeria) and net work defect of curl-bottom pit(Brazil, China). Fluid inclusions in topaz may be classiffied into liquid $CO_2$-bearing inclusion, gaseous inclusion, halite, sylvite-bearing inclusion and liquid inclusion. The results of this study can be useful to devising artificial coloring methods for topaz with different mineralogical compositions.

• Journal of the korean academy of Pediatric Dentistry
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• v.43 no.4
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• pp.347-353
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• 2016

The purpose of this study was to evaluate shear bond strength and microleakage of a new self-etch fissure sealant containing S-PRG filler (BeautiSealant). Fourty-five premolars were randomly divided into three groups: SEPBS group (Self-etching primer + BeautiSealant), AEBS group (Phosphoric acid etching + BeautiSealant), AECP group (Phosphoric acid etching + $Clinpro^{TM}$ sealant). For the shear bond strength test, microcylinders of fissure sealant were bonded to prepared buccal surfaces of teeth and shear bond strengths were measured by a universal testing machine. For the microleakage test, sealants were applicated on each occlusal fissure of teeth. All teeth surface were coated with finger nail varnish, with the exception of a 1.0 mm window around the sealant margins. The teeth were immersed in 2% methylene blue solution for 24 hours and then rinsed in water. The teeth were then embedded in resin and cut buccolingually along the tooth axis and observed with a stereomicroscope to determine the degree of microleakage. SEPBS group demonstrated lower bond strength in comparison with that of AEBS and AECP groups (p < 0.05). However, no significant differences were observed between AEBS and AECP groups. There was no statistically significant difference in degree of microleakage among three groups.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.2 no.1
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• pp.10-19
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• 1992

Mn - Zn Ferrite has physical properties of the high initial permeability, saturation magnetic flux density, and low loss factor as a representative magnetic material of soft ferrites, in addition the mechanical property is excellent as a single crystal. Therefore it is important electronic components and used for VTR Head. Mn - Zn Ferrite single crystals with the diameter 8mm were grown in atmosphere mixed with $O_2$ and Ar gas by the Floating Zone(FZ) method that impurities can not be incorporated to the crystals because of not-using the crucible to put in the melt, and the sharp temperature gradient results from making a focus at one point utilizing the infrared ray emitted from the halogen lamp as a heat source. During the crystal growing, the highest temperature of melting area was maintained to be $1650^{\circ}C$, growth rate and rotation rate were 10 mm/hr, 20 rpm respectively. The phases and the growth directions of crystals were determined from the analysis of X RD patterns, Laue, TEM diffraction patterns and etch pit shapes were observed by the optical microscope through the chemical etching. The corelation of optimum conditions for acquiring the better crystals was found out with the growth rate, the length and diameter of melt at the interface according to the diameter of feed rod, and the patterns of growing interface also studied.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.1
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• pp.1-7
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• 2016

RE : YAG ($RE=Nd^{3+}$, $Er^{3+}$) single crystals are laser diodes and generally grown by Czochralski method with controlling the various growth parameter. Since the defects occurred by temperature gradient or the rotation speed of solid-liquid growth interface act as the decline of crystal optical property during the growth procedure, crystalline quality improvement via defects analysis is necessary. The etch pit density (EPD) analysis was used to confirm the surface defect of grown RE : YAG single crystal and to select the area of transmission electron microscopy (TEM) analysis. Defects in the specimen produced by tripod polishing method such as buckling, rod shaped, bend contours by internal stress, segregation and others were observed by using 200 kV TEM and 300 kV FE-TEM.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.2
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• pp.45-50
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• 2005

During oxidation process, several type of defects are formed on the surface of the silicon crystal which was damaged mechanically before oxidation. As the size of abrasive particle increases multiple dislocation loops are produced favorably over oxidation-induced stacking faults, which are dominantly produced when ground with finer abrasive particle. These defects are not related with the crystal growth process like Czochralski or directional solidification. During directional solidification process, twins and stacking faults are the two major defects observed in the bulk of the silicon crystal. On the other hand, slip dislocations produced by the thermal stress are not observed. Thus, not only in single crystalline silicon crystal but also in multi-crystalline silicon, extrinsic gettering process with programmed production of surface defects might be highly applicable to silicon wafers for purification.

• Korean Journal of Materials Research
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• v.9 no.5
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• pp.503-508
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• 1999

We have investigated the physical and diffusion barrier property of Ti-Si-N film for Cu metallization. The ternary compound was deposited by using reactive rf magnetron sputtering of a TiSi$_2$target in an Ar/$N_2$gas mixture. Resistivities of the films were in range of 358$\mu$$\Omega$-cm, to 307941$\mu$$\Omega$-cm, and tended to increase with increasing the $N_2$/Ar flow rate ratio. The crystallization of the Ti-Si-N compound started to occur at 100$0^{\circ}C$ with the phases of TiN and Si$_3$N$_4$identified by using XRD(X-ray Diffractometer). The degree of the crystallization was influenced by the $N_2$/Ar flow ratio. The diffusion barrier property of Ti-Si-N film for Cu metallization was determined by AES, XRD and etch pit by secco etching, revealing the failure temperature of 90$0^{\circ}C$ in 43~45at% of nitrogen content. In addition, the very thin compound (10nm) with 43~45at% nitrogen content remained stable up to $700^{\circ}C$. Furthermore, thermal treatment in vacuum at $600^{\circ}C$ improved the barrier property of the Ti-Si-N film deposited at the $N_2$(Ar+$N_2$) ratio of 0.05. The addition of Ti interlayer between Ti-Si-N films caused the drastic decrease of the resistivity with slight degradation of diffusion barrier properties of the compound.