• 한국진공학회지
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• 제7권3호
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• pp.169-175
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• 1998

HBr/$Cl_2/He-O_2$ 반응 기체를 이용한 반응성 이온 식각후, 폴리실리콘 표면에 형성된 잔류막을 x-선 광전자 분광법(x-ray photoelectron spectroscopy, XPS)과 전자 현미경 (scanning electron mocroscopy, SEM)을 이용하여 관찰하였다. 그 결과 잔류물은 패턴된 폴 리실리콘의 맨 윗부분에 자존하고 있었으며, 화학 결합 상태는 실리콘 산화물임이 밝혀졌다. 잔류물인 실리콘 산화물의 형성 메카니즘을 규명하기 위하여 원래의 혼합 기체 성분중 한가 지씩의 반응 기체를 제외시켜 가면서 실험하였다. 비록 플라즈마 성질이 다를지라도, 잔류물 은 산소의 존재하에서 잘 형성됨을 알 수 있었는데, 이는 휘발성이 낮은 실리콘-할로겐 화 합물이 산소에 의해 산화됨으로써 형성되는 것으로 이해하게 되었다. 또한 반응성 이온 식 각후 형성된 잔류층은 소자의 전기적 특성과 후처리 공정에 영향을 미치는 것으로 알려져 있어서, 이를 제거하기 위해 습식과 건식 후처리 공정을 도입하여 비교하였다. 그 결과 건식 공정의 경우 기체에 의해 새로운 잔류물이 형성됨을 XPS를 통하여 관찰하였다. 따라서 잔 류물을 제거하고 깨끗한 표면을 얻기 위해서는 습식 공정이 더 적합함을 알았다.

• 한국표면공학회지
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• 제41권6호
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• pp.269-273
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• 2008

The etch of $(Na_{0.5}K_{0.5})NbO_3$ (NKN) thin film was performed in $BCl_3/Cl_2/Ar$ inductively coupled plasma. It was found that the 1sccm addition $BCl_3$ (5%) into $Cl_2/Ar$ plasma caused a non-monotonic behavior of the NKN etch rate. The maximum etch rate of NKN was 95.3 nm/min at $BCl_3$ (1 sccm)/$Cl_2$ (16 sccm)/Ar (4 sccm), 800 W ICP power, 1 Pa pressure and 400 W bias power. The NKN etch rate shows a monotonic behavior a s the bias power increases. The analysis of the narrow scan spectra of XPS for both a s-deposited and etched NKN films allowed one to assume ion assisted etch mechanism. The most probable reason for the maximum etch rate can be defined as a concurrence of chemical and physical etch pathways.

• Transactions on Electrical and Electronic Materials
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• 제8권6호
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• pp.229-233
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• 2007

In this study, we carried out an investigation of the etching characteristics(etch rate, selectivity) of $HfO_2$ thin films in the $CH_4/Ar$ inductively coupled plasma. It was found that variations of input power and negative dc-bias voltage are investigated by the monotonic changes of the $HfO_2$ etch rate as it generally expected from the corresponding variations of plasma parameters. At the same time, a change in either gas pressure or in gas mixing ratio result in non-monotonic etch rate that reaches a maximum at 2 Pa and for $CH_4(20%)/Ar(80%)$ gas mixture, respectively. The X-ray photoelectron spectroscopy analysis showed an efficient destruction of the oxide bonds by the ion bombardment as well as showed an accumulation of low volatile reaction products on the etched surface. Based on these data, the ion-assisted chemical reaction was proposed as the main etch mechanism for the $CH_4-containing$ plasmas.

• 마이크로전자및패키징학회지
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• 제8권3호
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• pp.63-67
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• 2001

최근가지 Pt박막의 식각은 Cl 계열의 가스에 의한 물리적인 스퍼터링 기구에 초점을 맞추어 연구가 진행되어왔으며 F 계열의 가스에 의한 식각 특성은 상당히 미진하였다. 본 연구에서는 ECR(electron cyclotron resonance) 플라즈마 식각 장비를 이용하여 $Cl_2$/Ar 가스와 $SF_{6}$/Ar 가스를 사용하여 Pt 박막의 식각 특성을 연구하였고, $SF_{6}$/Ar 가스의 경우 Pt 박막과 반응하여 휘발성의 식각 부산물을 형성시킬 수 있음을 확인하였다. 그리고 휘발성있는 platinum fluoride 화합물의 형성에 의해 식각률, 식각 측면형상과 표면 거칠기 특성개선도 얻을 수 있었다.

• 한국항해항만학회:학술대회논문집
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• 한국항해항만학회 2000년도 추계학술대회논문집
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• pp.40-44
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• 2000

In this paper, since the research on the etching of SrBi$_2$Ta$_2$O$_{9}$ (SBT) thin film was few (specially Cl$_2$-base ), we had studied the surface reaction of SBT thin films using the OES in high density plasma etching as a function of rf power, dc bias voltage, and Cl$_2$/(C1$_2$+Ar) gas mixing ratio. It had been found that the etch rate of SBT thin films appeared to be more affected by the physical sputtering between Ar ions and surface of the SBT compared to the chemical reaction in our previous papers$^{1.2}$ . The change of Cl radical density that is measured by the OES as a function of gas combination showed the change of the etch rate of SBT thin films. Therefore, the chemical reactions between Cl radical in plasma and components of the SBT enhance to increase the etch rates of SBT thin films and these results were confirmed by XPS analysis.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.40-44
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• 2000

In this paper, since the research on the etching of SrBi$_2$Ta$_2$O$_{9}$ (SBT) thin film was few (specially Cl$_2$-base ), we had studied the surface reaction of SBT thin films using the OES in high density plasma etching as a function of rf power, dc bias voltage, and Cl$_2$(Cl$_2$+Ar) gas mixing ratio. It had been found that the etch rate of SBT thin films appeared to be more affected by the physical sputtering between Ar ions and surface of the SBT compared to the chemical reaction in our previous papers$^{1.2}$ . The change of Cl radical density that is measured by the OES as a function of gas combination showed the change of the etch rate of SBT thin films. Therefore, the chemical reactions between Cl radical in plasma and components of the SBT enhance to increase the etch rates of SBT thin films and these results were confirmed by XPS analysis.

• Corrosion Science and Technology
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• 제2권4호
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• pp.189-193
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• 2003

The Ru etching using $O_2/C_{12}$ plasmas has been studied by employing the helicon etcher. The changes of Ru etch rate, Ru to $SiO_2$ etch selectivity and Ru electrode etching slope with varied process variables were investigated. The Ru etching slope at the optimized etching condition was measured to be $84^{\circ}$. We reveal that the Ru etching using $O_2/C_{12}$ plasma generates the $RuO_2$ thin film. Possible mechanism of Ru etching is discussed.

• Transactions on Electrical and Electronic Materials
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• 제18권2호
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• pp.74-77
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• 2017

In this work, we investigated the etching characteristics of TaNO thin films and the selectivity of TaNO to $SiO_2$ in an $O_2$/CF4/Ar inductively coupled plasma (ICP) system. The maximum etch rate of TaNO thin film was 297.1 nm/min at a gas mixing ratio of O2/CF4/Ar (6:16:4 sccm). At the same time, the etch rate was measured as a function of the etching parameters, such as the RF power, DC-bias voltage, and process pressure. X-ray photoelectron spectroscopy analysis showed the efficient destruction of the oxide bonds by the ion bombardment, as well as the accumulation of low volatile reaction products on the etched surface. Based on these data, the ion-assisted chemical reaction was proposed as the main etch mechanism for the $CF_4$-containing plasmas.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.384-384
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• 2010

The surface reaction characteristics of Zinc Oxide (ZnO) in $Cl_2/BCl_3$/Ar gas ratio using inductively coupled plasma system were investigated. It was found that ZnO etch rate shows a non-monotonic behavior with increasing both Ar fraction in $Cl_2/BCl_3$ plasma, RF power, and gas pressure. The maximum ZnO etch rate of 53 nm/min was obtained for $Cl_2$(3 sccm)/$BCl_3$(16 sccm) /Ar(4 sccm) gas mixture. The chemical state of etched surfaces was investigated with X-ray diffraction (XRD) and the etched surface was investigated to the rms by atomic force microscopy (AFM). From these data, the suggestions on the ZnO etch mechanism were made by secondary ion mass spectrometery (SIMS).

• 한국전기전자재료학회논문지
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• 제16권4호
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• pp.286-291
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• 2003

(Pb,Sr)TiO$_3$(PST) thin films have attracted great interest as new dielectric materials of capacitors for Gbit dynamic random access memories. In this study, inductively coupled CF$_4$/Ar plasma was used to etch PST thin films. The maximum etch rate of PST thin films was 740 $\AA$/min at a CF$_4$(20 %)/Ar(80 %) 9as mixing ratio, an RF power of 800 W, a DC bias voltage of -200 V, a total gas flow of 20 sccm, and a chamber pressure of 15 mTorr. To clarify the etching mechanism, the residue on the surface of the etched PST thin films was investigated by X-ray photoelectron spectroscopy. It was found that Pb was mainly removed by physically assisted chemical etching. Sputter etching was effective in the etching of Sr than the chemical reaction of F with Sr, while Ti can almost removed by chemical reaction.