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A Study on the Plasma Etching of Ru Electrodes using $O_2/Cl_2$ Helicon Discharges  

Kim, Hyoun-Woo (School of Materials Science and Engineering)
Hwang, Woon-Suk (School of Materials Science and Engineering)
Publication Information
Corrosion Science and Technology / v.2, no.4, 2003 , pp. 189-193 More about this Journal
Abstract
The Ru etching using $O_2/C_{12}$ plasmas has been studied by employing the helicon etcher. The changes of Ru etch rate, Ru to $SiO_2$ etch selectivity and Ru electrode etching slope with varied process variables were investigated. The Ru etching slope at the optimized etching condition was measured to be $84^{\circ}$. We reveal that the Ru etching using $O_2/C_{12}$ plasma generates the $RuO_2$ thin film. Possible mechanism of Ru etching is discussed.
Keywords
Ru; etching; helicon; plasma;
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