• 한국전기전자재료학회논문지
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• 제16권2호
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• pp.89-96
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• 2003

Photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopy have been performed at 6 K on the 1540 nm $^4$I$\_$(13/2)/\longrightarrow$^4$I$\_$(15/2)/ emission of Er$\^$+3/ in in situ Er-doped GaN The PL and PLE spectra of in situ Er-doped GaN are compared with those of Er-implanted GaN in this study. The lineshapes of the broad PLE absorption bands and the broad PL bands in the spectra of the in situ Er-doped GaN are similar to those in Er-doped glass rather than in the Er-implanted GaN. The PL spectra of this in situ Er-doped GaN are independent of excitation wavelength and their features are significantly different from the site-selective PL spectra of the Er-implanted GaN. These PL and PLE studies reveal that a single type of Er$\^$3+/ sites is present in the in situ Er-doped GaN and these Er sites are different from those observed in the Er-implanted GaN. In addition, the comparison of the PL single strength illustrates that the excitation of Er$\^$3+/ sites through the energy absorption of defects in Er-implanted GaN.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.33-38
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• 2000

The ~1540 nm Er$^{3+}$ photoluminescence (PL) and photoluminescence excitation (PLE) spectra of Er-implanted Mg-codoped GaN (GaN:Er+Mg) exhibit that the excitation efficiency of a specific Er$^{3+}$ center among different Er$^{3+}$ centers existing in Er-implanted GaN is selectively enhanced, compared to Er-implanted undoped GaN (GaN:Er). In GaN:Er+Mg, the 1540 nm PL peaks characteristic of the so-called "violet-pumped" Er$^{3+}$ center and the ~2.8-3.4 eV (violet) PLE band are significantly strengthened by the Mg-doping. The intra-f absorption PLE bands associated with this "violet-pumped" center are also enhanced by this doping. The 1540 nm PL peaks originating from the violet-pumped center dominate the above-gap-excited Er$^{3+}$ PL spectrum of GaN:Er+Mg, whereas it was unobservable under above-gap excitation in GaN:Er. All of these results indicate that Mg doping increases the efficiency of trap-mediated excitation of Er$^{3+}$ emission in Er-implanted GaN.planted GaN.

• 한국전기전자재료학회논문지
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• 제18권12호
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• pp.1101-1105
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• 2005

We have investigated the optical properties of Erbium (Er)-implanted GaN by photoluminescence (PL). Various doses of Er ion were implanted on GaN epilayers by ion implantation. Visible green emission lines due to inner 4f shell transitions for $Er^{3+}$ were observed from the PL spectrum of Er-implanted GaN. The emission spectrum consists of two narrow green lines at 537 and 558 nm. The green emission lines are identified as $Er^{3+}$ transitions from the $^{5}H_{11/2}$ and $^{4}S_{3/2}$ levels to the $^{4}I_{15/2}$ ground state. The stronger peaks in the case with the dose of $5{\times}10^{14}cm^{-2}$, together with the relatively higher intensity of the $Er^{3+}$ luminescence in the lower doped sample. It implies that some damage remains in the case with the dose of $1{\times}10^{16}cm^{-2}$. The peak positions of emission lines due to inner 4f shell transitions for $Er^{3+}$ do not change with increasing temperature. It indicates that $Er^{3+}$ related emission depends very little on the ambient temperature.

• Transactions on Electrical and Electronic Materials
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• 제1권3호
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• pp.6-9
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• 2000

Selectively excited photoluminescence(PL) spectroscopy has been carried out on the ~1540 nm $^{4}$I$_{13}$ 3/ to $^{4}$I/wub 15/2/ emissions of the multiple Er$^{3+}$ centers observed in Er-implante undoped and Mg-doped GAN at temperatures ranging from 6K to 295K. The temperature dependence of the Er$^{3+}$ PL spectra selectively excited by below -gap light demonstrates different quenching rates for the distinct Er$^{3+}$ centers, and indicates that the PL spectra with the most rapid thermal quenching rats do not contribute to the room temperature, above-p-pumped Er$^{3+}$ spectrum. In addition, selective PL spectroscopy has ben carried out on the Er$^{3+}$ emission in Er-implanted undoped and Mg-doped GaN at temperatures ranging 6K to 295K. The results indicate that the previously reported enhancement of the violet-pumped centers contribution to the low temperature above excited Er$^{3+}$ PL in Mg-doped GaN is also evident at room temperature.temperature.

• 한국진공학회지
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• 제17권4호
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• pp.346-352
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• 2008

Eu을 이온주입한 GaN 시료에 대하여 Eu의 site들에 대한 연구와 Mg을 같이 도핑하였을 때의 효과를 분석하였다. 빨간색 광원으로 주목받는 620nm 근처의 Eu의 $^5D_0\;{\rightarrow}\;^7F_2$ 전이에 대하여 photoluminescence (PL) 와 PL 여기 분광법을 이용하여 GaN 내에서 Eu 이온이 자리하는 이미 알려진 2 개의 site 이외에도 2 종류의 site들이 있음을 확인하였다. 이들 중 한 site는 Mg의 codoping에 의하여 PL 크기가 약 1.6배 증가하였다. 이는 GaN의 밴드갭보다 작은 trap에 의해 에너지를 전달받는 Er이나 Nd보다 Mg의 도핑에 의한 효과가 매우 작은 것이다. GaN:Eu에서는 Mg과 관련된 trap을 통하지 않고 GaN에서 직접 Eu으로 에너지를 전달하기 때문으로 생각된다.

• Transactions on Electrical and Electronic Materials
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• 제1권1호
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• pp.26-31
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• 2000

The ~1540 nm $^4$ $I_{13}$ 2/ longrightarro $w^4$ $I_{15}$ 2/ emissions of E $r^{3+}$ in Er-implanted GaN annealed at temperatures in the 400 to 100$0^{\circ}C$ range were investigated to gain a better understanding of the formation and dissociation processes of the various E $r^{3+}$ sites and the recovery of damage caused by the implantation with increasing annealing temperature ( $T_{A}$).The monotonic increase in the intensity of the broad defect photoluminescence(PL) bands with incresing $T_{A}$ proves that these are stable radiative recombination centers introduced by the implantation and annealing process. Theser centers cannot be attributed to implantation-induced damage that is removed by post-implantation annealing. Selective wavelength pumpling of PL spectra at 6K reveals the existence of at least nine different E $r^{3+}$ sites in this Er-implanted semiconductor. Most pf these E $r^{3+}$ PL centers are attributed to complexed of Er atoms with defects and impurities which are thermally activated at different $T_{A}$. Only one of the nine observed E $r^{3+}$ PL centers can be pumped by direct 4f absorption and this indicates that it is highest concentration E $r^{3+}$ center and it represents most of the optically active E $r^{3+}$ in the implanted sample. The fact that this E $r^{3+}$ center cannot be strongly pumped by above-gap light or broad band below-gap absorption indicates that it is an isolated center, i.e not complexed with defects or impurities, The 4f-pumped P: spectrum appears at annealing temperatures as low as 40$0^{\circ}C$, and although its intensity increase monotonically with increasing $T_{A}$ the wavelengths and linewidths of its characteristic peaks asre unaltered. The observation of this high quality E $r_{3+}$PL spectrum at low annealing temperatures illustrates that the crystalline structure of GaN is not rendered amorphous by the ion implantation. The increase of the PL intensities of the various E $R_{3+}$sites with increasing $T_{A}$is due to the removal of competing nonradiative channels with annealing. with annealing.annealing.