• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.277-278
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• 2005

Admittance Spectroscopic analysis was applied to study the effect of LiF buffer layer and to model the equivalent circuit for poly(2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylenevinylene) (MEH-PPV)-based polymer light emitting diodes (PLEDs) with the LiF cathode buffer layer. The single layer device with ITO/MEH-PPV/Al structure can be modeled as a simple parallel combination of resistor and capacitor. Insertion of a LiF layer at the Al/MEH-PPV interface shifts the highest occupied molecular orbital level and the vacuum level of the MEH-PPV layer as a result the barrier height for electron injection at the Al/MEH-PPV interface is reduced. The admittance spectroscopy measurement of the devices with the LiF cathode buffer layer shows reduction in contact resistance ($R_c$), parallel resistance ($R_p$) and increment in parallel capacitance ($C_p$).

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.4
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• pp.255-261
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• 2005

With the advent of sub-90nm technologies, the system-on-chip (SoC) and system-in-package (SiP) are becoming the trend in delivering low-cost, low-power, and small-form-factor consumer electronic systems running at multiple GHz. The shortened transistor channel length reduces the transistor switching cycles to the range of several picoseconds, yet the time-of-flights of the critical on-chip and off-chip interconnects are in the range of 10 picoseconds for 1.5mm-long wires and 100 picoseconds for 15mm-long wires. Designers realize the bottleneck today often lies at chip-to-chip interconnects and the industry needs a good model to compute the inductance in these parts of circuits. In this paper we propose a new method for extracting accurate equivalent inductance circuit models for SPICE-level circuit simulations of system-on-chip (SoC) and system-in-package (SiP) designs. In our method, geometrical meshes are created and numerical methods are used to find the solutions for the electromagnetic fields over the fine meshes. In this way, multiple-GHz SoC and SiP designers can use accurate inductance modeling and interconnect optimization to achieve high yields.

• Journal of the Korean Electrochemical Society
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• v.3 no.1
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• pp.25-30
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• 2000

The relation between the phase-shift profile for the intermediate frequencies and the Langmuir adsorption isotherm at the poly-$Pt/0.1\;M\;H_2SO_4$ aqueous electrolyte interface has been studied using ac impedance measurements, i.e., the phase-shift methods. The suggested interfacial equivalent circuit consists of the serial connection of the electrolyte resistance ($R_S$), the faradaic resistance $(R_F)$ and the equivalent circuit element $(C_P)$ of the adsorption pseudocapacitance $(C_\varphi)$. The delayed phase shift $(\varphi)$ depends on both the cathode potential (E) and frequency (f), and is given by $\varphi=-tan^{-1}[1/2{\pi}f(R_s+R_F)C_p]$. The phase-shift profile $(\varphi\;vs.\;E)$ for the intermediate frequency (ca. 6Hz) can be used as an experimental method to determine the Langmuir adsorption isotherm (9 vs. E). The equilibrium constant (K) for H adsorption and the standard free energy $({\Delta}G_{ads})$ of H adsorption at the poly-$Pt/0.1\;M\;H_2SO_4$ electrolyte interface are $1.8\times10^{-4}\;and\;21.4kJ/mol$, respectively. The H adsorption is attributed to the over-potentially deposited hydrogen (OPD H).

• The Journal of Korean Institute of Communications and Information Sciences
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• v.19 no.9
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• pp.1710-1718
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• 1994

In this paper, a broadband tunable YIG(Yittrium Iron Garnet) oscillator is designed and fabricated. To design an YTO(YIG Tuned Oscillator), a suitable YIG resonator is selected according to the design oscillation range and its equivalent R, L, C resonant circuit parameters are obtained through the measurement of its resonance characteristic. Using the equivalent circuit, the wideband topology which suppresses the parasitic oscillation is selected and implemented. The designed circuit is simulated by HBT(Harmoic Balance Technique) using EEsof's jOMEGA. The YTO thus fabricated has the wide oscillation range from 1.4 GHz to 4 GHz, and its linearity is 0.5% in the oscillation range. The phase noise is below 105dBc at 100kHz offset.

• Journal of the Korean Electrochemical Society
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• v.3 no.2
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• pp.109-114
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• 2000

The relation between the phase-shift profile fur the intermediate frequencies and the Langmuir adsorption isotherm at the poly-Ir/0.1 M $H_2SO_4$ aqueous electrolyte interface has been studied using ac impedance measurements, i.e., the phase-shift methods. The simplified interfacial equivalent circuit consists of the serial connection of the electrolyte resistance $(R_s)$, the faradaic resistance $(R_F)$, and the equivalent circuit element $(C_P)$ of the adsorption pseudoca-pacitance $(C_\phi)$. The comparison of the change rates of the $\Delta(-\phi)/{\Delta}E\;and\;\Delta{\theta}/{\Delta}E$ are represented. The delayed phase shift $(\phi)$ depends on both the cathode potential (E) and frequency (f), and is given by $\phi=tan^{-1}[1/2{\pi}f(R_s+R_F)C_P]$. The phase-shift profile $(-\phi\;vs.\;E)$ for the intermediate frequency (ca. 1 Hz) can be used as an experimental method to determine the Langmuir adsorption isotherm $(\theta\;vs.\;E)$. The equilibrium constant (K) for H adsorption and the standard free energy $({\Delta}G_{ads})$ of H adsorption at the poly-Ir/0.1 M $H_2SO_4$ electrolyte interface are $2.0\times10^{-4}$ and 21.1kJ/mol, respectively. The H adsorption is attributed to the over-potentially deposited hydrogen (OPD H).

• Journal of Surface Science and Engineering
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• v.31 no.5
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• pp.245-250
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• 1998

There is clear pressing need to reduce bias field(Ha,) used on linear magenetomechanical resonator tag by at least a factor of two to allow low-bias operation near the frequency minimum since reducing Ha causes a dramatic increase in well depth, which implies increased stability. However, this makes it more difficult to maintain tight frequncy specs. It can be solved by a reduction of magnetomechanical coupling(k). We determined from an equivalent circuit model that optimal reduced, k, is near 0.3 Also, We determiend the material properties($lambda_s$, :saturated magenetostriction, $M_s$, and,$H_a$) that give k=0.3. From these evaluations, we suggested that on optimal comosition with adequate mathrial properties is $Fe_{55}Co_{15}Cr_6Nb_2B_{18}Si_4$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.10 s.89
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• pp.938-943
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• 2004

In this paper, we propose a T-shaped DGS for CPW and provide the closed-form solutions for power loss rate, and bandwidth of the DGS. The proposed T-shaped DGS structure has a range of capacitance(C) 5.5 times wider than the dumbbell-shaped DGS structure. In addition we also analyze relations between R, L, C values of the DGS equivalent circuit and total loss rate, BW, $\omega_0$ of the DGS.

• The Transactions of the Korean Institute of Power Electronics
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• v.16 no.2
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• pp.199-207
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• 2011

Electrical modeling of lithium-polymer battery is very important for electric energy supply system. In this paper, electric equivalent circuit of lithium-polymer battery is proposed to simulate its dynamic characteristics. Maccor 8500 charge/discharge system is used to obtain the experimental data of lithium-polymer battery. Model parameters are calculated by using Matlab. This paper defines a R-C model for charging/discharging of battery and polynomial functions are used for OCV (Open Circuit Voltage) modeling. The proposed model is simulated with PSiM and then compared the simulation results with the experimental results to verify the validity of the proposed model.

• Proceedings of the KIEE Conference
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• 1990.07a
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• pp.215-220
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• 1990

A.C. impedance properties of $RuO_2$ based thick film resistors which having different resistivity value (DuPont 1721 : $100{\Omega}$/ sq., 1741 : $10K{\Omega}$/sq.) were investigated using by impedance analyzer. In case of lower resistivity 1721 system, the complex impedance was composed nearly R component for all speciman sintered at above $600^{\circ}C$, and the frequency dependancy on impedance was not affected very much up to 5MHz and again gradually increase with increasing the frequency. In case of higher resistivity 1741 resistor system, impedance properties were very depandant on sintering temperature. When sintering temperature was $600^{\circ}C$, the complex impedance plot shows a vertical line, which correspond to lone capacitance equivalant circuit, and the impedance linearly decreased with increasing frequency. In case of speciman sintered at $700-900^{\circ}C$, the complex impedance plot shows semi-circular are correspond to a lumped RC combination, and the impedance shows constant value to 5MHz, again decreased with increasing frequency. But the complex impedance behavior of speciman sintered at $1000^{\circ}C$ was shows the equivalent circuit correspont to parallel combined LCR component, and the impedance was not varied with frequency.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.427-430
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• 2001

The degradation characteristics versus MgO Additive for the ZnO ceramic devices fabricated by the standard ceramic techniques is investigated in this study. It were made these devices be basic Matsuoka's composition. Especially, MgO were added to analyze the degradation characteristics and sintered in air at 1300$^{\circ}C$. The conditions of DC degradation test were 115${\pm}$2$^{\circ}C$ for 12h. Using XRD and SEM, the phase and microstructure of samples were analyzed respectively. The elemental analysis in the microstructures was used by EDS, E-J analysis was used to determine ${\alpha}$ . Frequency analysis was accomplished to understand the relationship between R$\sub$g/ and $R_{b}$ with the electric stress at the equivalent circuit.