• 제목/요약/키워드: Epoxy molding compound

검색결과 73건 처리시간 0.023초

Improvement of Adhesion Strength between Cu-based Leadframe and Fpoxy Molding Compound

  • Lee, Ho-Yoing
    • Transactions on Electrical and Electronic Materials
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    • 제1권3호
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    • pp.23-28
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    • 2000
  • A block-oxide layer was formed on the surface of Cu-based leadframe by chamical oxidation method in order to enhance the adhesion strength between Cu-based leadframe and epoxy molding compound (EMC) Using sandwiched double cantilever beam (SDCB) specimens, the adesion strength was measured in terms of interfacial fracture toughness, G$\sub$IC//Results showed that the black-oxide layer was composed of two kinds of layers: pebble-like Cu$_2$O layer and acicular CuO layer, At the initial stage of oxidation the Cu$_2$O layer was preferentially formed and thickened up to around 200 nm whithin 1 minute of the oxidation time. Then the CuO layer started to from atop of the Cu$_2$O layer and thickened up to around 1300 nm until 20 minutes. As soon as the CuO layer formed, the thickness of Cu$_2$O layer began to reduce and finally reached to around 150 nm. The pre-cleaned and the Cu$_2$O coated leadframes showed almost no adhesion of EMC, however, as the CuO precipitates appeared and became continuous, G$\sub$IC/ increased up to around 80 J/㎡. Further oxidation raised G$\sub$IC/ up. to around 100 J/㎡.

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IC 몰딩 콤파운드 재료의 파괴 인성치(II) (Fracture Toughness of IC Molding Compound Materials(II))

  • 김경섭;신영의
    • 한국전기전자재료학회논문지
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    • 제11권5호
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    • pp.353-357
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    • 1998
  • Cracking problem of Epoxy Molding Compound(EMC) is critical for the reliability of the plastic package during temperature cycling and IR-reflow condition. Fracture toughness of EMC, which is defined as the resistance of EMC to the crack propagation, is a useful factor in ht estimation of EMC against package crack. Thus, development of EMC having high fracture toughness at a given loading condition would be important for confirming the integrity of package. In this study, toughness of several EMC was measured by varying the test conditions such as temperature, loading speeds, and weight percent of filler in order to quantify the variation of toughness of EMC under various applicable conditions. It was found from the experiments that toughness of all EMC has following trends, i.e., it rapidly decreases over the glass transition temperature, remains almost same or little decreases below $0^{\circ}C$. It decreases with the growth of cross head speed in EMC and the weight percent of filler as the degree of brittleness of EMC increases with the amount of filler content.

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결정성 바이페닐 에폭시 합성 및 경화 거동 연구 (Synthesis and Curing Behavior of Crystalline Biphenyl Epoxy Resin)

  • 최봉구;최호경;최재현;최중소
    • Korean Chemical Engineering Research
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    • 제58권1호
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    • pp.44-51
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    • 2020
  • n-Methylimidazole, acetonitrile, benzylbromide 및 sodiumhexafluoroantimonate를 이용하여 염기성 촉매 1-benzyle-3-mehyl-imidazolium hexafluoroantimonate (BMH)를 합성하고, tetramethyl biphenol (TMBP)과 epichlorohydrine을 이용하여 결정성 바이페닐 에폭시를 합성하여 FT-IR과 1H-NMR으로 구조를 분석하였다. 합성한 촉매 BMH의 경화 거동을 고찰하기 위하여 0 ℃에서 250 ℃까지 5 ℃/min의 속도로 승온시키면서 에폭시 수지에 대하여 BMH의 질량비를 0.5, 1.0, 2.0 wt.%로 변화시켜 시차주사 열량계(differential scanning calorimeter, DSC)로 분석하였다. 그 결과, BMH 촉매는 비스페놀 A형 에폭시와 양이온 중합체의 단계적 가열과정에서 빠른 경화 특성을 보였다. 또한 합성한 바이페닐 에폭시는 일정한 온도에서 급격히 점도가 낮아지는 특성과 바이페놀의 강직한 골격구조를 가지는 특성을 가지고 있기 때문에 결정성 구조 및 고내열성을 요구하는 반도체용 봉지재료의 대표격인 epoxy molding compound (EMC)의 원료로서의 적용 가능성을 고찰하였다. 그 결과, 본 연구에서 개발한 바이페닐 에폭시는 결정성 구조로 이루어진 것을 확인하였으며, 경화제로 페놀 노볼락수지와 고온에서의 경화반응 시, BMH 촉매 존재 시에는 150 ℃ 근처에서 경화반응이 관찰되어 EMC의 원료로 사용될 수 있음을 확인하였다.

Epoxy Molding Compound의 경화거동에 관한 연구 (A Study on the Cure Behavior of Epoxy Molding Compound)

  • 윤상영;오명숙;박내정
    • 폴리머
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    • 제24권6호
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    • pp.837-844
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    • 2000
  • 본 연구에서는 반도체 봉지제로 사용되는 상용 EMC중 가속제의 함량이 다른 두 종류의 프리프레그에 대하여 그 경화거동을 등온 및 승온조건에서 시차 주사 역량계, 점도계 및 유전율 측정계를 이용하여 분석하였다. 경화반응 속도변수는 Kamal의 자동촉매 반응식을 이용하여 m+n을 2로 가정한 후 Ryan Dutta의 방법에 따라 계산에 의한 경화반응 속도의 예측 치와 실제 실험 데이터가 10$0^{\circ}C$를 제외한 나머지 온도에서는 잘 일치하는 경향을 나타내었다. 경화과정 중 겔화와 유리화와 같은 상 전이를 관찰하였으며 각각의 등온 경화온도에서 경화시간에 따른 유리전이 온도 ($T_{g}$ )를 측정하여 경화온도와 유리전이 온도가 같아지는 유리화점을 구할 수 있었고 절대온도와의 사이에 Arrhenius관계가 성립함을 확인하였다. 또한 평판형 전극을 이용한 DEA는 EMC의 경화 과정을 동정하는데 효과적으로 이용될 수 있음을 알 수 있었다. 같은 종류의 수지 시스템에서는 TTT diagram상에서 $_{gel}$$T_{g}$ 가속제의 농도에 상관없이 일정한 온도에서 나타남을 확인하였다.

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올소 크레졸 노볼락 에폭시 수지 연화점 변화에 따른 에폭시 몰딩 컴파운드의 물성 변화 (The Change of Physical Properties of Epoxy Molding Compound According to the Change of Softening Point of ο-Cresol Novolac Epoxy Resin)

  • 김환건;류제홍
    • 대한화학회지
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    • 제40권1호
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    • pp.81-86
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    • 1996
  • 반도체를 보호하기 위하여 사용하는 반도체 성형 재료로, 현재 주로 사용되고 있는 Epoxy Molding Compound(EMI)의 주성분인 올소 크레졸 노볼락 에폭시 수지의 특성과 성형 재료의 관계를 조사하기 위하여 올소 크레졸 노볼락 에폭시 수지의 분자량과 깊은 관련이 있는 수지의 연화점 변화에 따른 EMC의 물성변화를 살펴보았다. 사용된 epoxy 수지의 연화점은 각각 65.1$^{\circ}C$, 72.2$^{\circ}C$, 83.0$^{\circ}C$ 인 3종을 사용하였으며 연화점 변화에 따른 EMC의 물성변화를 살펴보기 위하여 기계적 물성으로 굴곡 강도와 굴곡탄성율을, 열적 특성 변화를 관찰하기 위하여 열팽창 계수와 열전도도 그리고 유리 전이온도를 각각 측정하였다. 그리고 성형 특성과의 관계를 살펴보기 위하여 스피랄 플로우(Spiral Flow)를 측정하였다, 연화점이 증가함에 따라 굴곡 탄성율과 유리상에서의 열팽창 계수(${\alpha}_1$), 그리고 열전도도는 거의 변화가 없었으나 유리전이온도는 연화점 증가에 따라 증가함을, 스피랄 플로우는 연화점 증가에 따라 감소함을 보여주었다. 이는 에폭시 수지의 분자량이 증가함에 따라 가교밀도가 증가하는 현상에 기인한다고 판단된다. 고무상에서의 여팽창 계수(${\alpha}_2$)와 굴곡강도의 경우는 전이점을 보여주고 있는데, 이는 수지점도 증가에 따른 충전제의 분산성에 기인한 것으로 판단된다.

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전자선 조사된 에폭시 몰딩 컴파운드의 유전 특성 (Dielectric Characteristics of Epoxy Molding Compound irradiated with Electron Beam)

  • 홍능표;박우현;이성용;김대수;이수원;홍진웅
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1995년도 추계학술대회 논문집
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    • pp.289-292
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    • 1995
  • In this experiment the specimen is selected for epoxy resin used in the molding compound materials for the power semiconductors. The specimen was divided into the two parts. one is a specimen without irradiation, the other is irradiated with electron beam, of which dose is 1[Mrad], 2[Mrad], 4[Mrad], 8[Mrad] and 24[Mrad], respectively. From the analysis for the physical properties of the specimen, the carbonyl group which is asffact the electrical properties is decreased according to increase the dose of the electron beam. In the measurement of dielectric characteristics among the electrical properties, the frequency dependance of the dielectric characteristics is confirmed that its ${\beta}$-peak is represented by one peak due to attribute to the main chain below 50[$^{\circ}C$], and two peak above the temperature 100[$^{\circ}C$].

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Numerical Analysis on the Die Pad/Epoxy Molding Compound(EMC) Interface Delamination in Plastic Packages under Thermal and Vapor Pressure Loadings

  • Jin Yu
    • 마이크로전자및패키징학회지
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    • 제5권2호
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    • pp.37-48
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    • 1998
  • The popcorn cracking phenomena in plastic IC packages during reflow soldering are investigated by considering the heat transfer and moisture diffusion through the epoxy molding compound(EMC) along with the mechanics of interface delamination. Heat transfer and moisture diffusion through EMC under die pad are analyzed by finite difference method (FDM)during the pre-conditioning and subsequent reflow soldiering pro-cess and the amounts of moisture mass and vapor pressure at delaminated die pad/ EMC interface are calculated as a function of the reflow soldering time. The energy release rate stress intensity factor and phase angle were obtained under various loading conditions which are thermal crack face vapor pressure and mixed loadings. It was shown that thermal loading was the main driving force for the crack propagation for small crack lengths but vapor pressure loading played more significant role as crack grew.

A Study on the design of separation force measuring system for improvement of semiconductor productivity

  • Park, Kun-Jong
    • 한국컴퓨터정보학회논문지
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    • 제22권10호
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    • pp.1-7
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    • 2017
  • In this paper, the separation force measuring system is developed. The separation force aries due to adhesive strength between semiconductor epoxy molding compound(EMC) and the metal plate in semiconductor formed plate. In general, when removing the metal plate in semiconductor formed plate from semiconductor epoxy molding compound, excessive strength can result in a increase in semiconductor defect rates, or conversely, if too little force is exerted on the metal plate in semiconductor formed plate, the semiconductor production rates can decrease. In this study, the design criteria for the selection of the AC servo motor, the role of the ball screw, the relationship between the load cell and the ball screw, and the rate of deceleration are given. In addition, minimizing the reject rate of semiconductors and maximizing the semiconductor production rate are achieved through the standardization of the collected separation force data measured by the proposed system.

반도체 패키지 EMC의 열물성 연구 (Thermophysical Properties of Epoxy Molding Compound for Microelectronic Packaging)

  • 이상현;도중광;송현훈
    • 반도체디스플레이기술학회지
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    • 제3권4호
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    • pp.33-37
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    • 2004
  • As the high speed and high integration of semiconductor devices and the generation of heat increases resulted in the effective heat dissipation influences on the performance and lifetime of semiconductor devices. The heat resistance or heat spread function of EMC(epoxy molding compound) which protects these devices became one of very important factors in the evaluation of semiconductor chips. Recently, silica, alumina, AlN(aluminum nitride) powders are widely used as the fillers of EMC. The filler loading in encapsulants was high up to about 80 vol%. A high loading of filler was improved low water absorption, low stress, high strength, better flowability and high thermal conductivity. In this study, the thermal properties were investigated through thermal, mechanical and microstructure. Thermophysical properties were investigated by laser flash and differential scanning calorimeter(DSC). For detailed inspection of materials, the samples were examined by SEM.

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