• 대한전자공학회논문지
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• 제21권5호
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• pp.41-45
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• 1984

양질의 에피택셜 층을 성장시키기 위해서는, 에피택셜 층을 성장시키기 직전에 HCl 가스를 사용하여 실리콘 기판을 에칭하는 과정이 거의 언제나 포함된다. 본 논문에서는, 대기압[1 기압]과 감압[0.1기압]에서 HCl 가스 농도와 에칭 온도의 변화에 따른 에칭속도 및 에치-피트 생성에 관하여 조사하였다. 그 결과, 대기압 공정과 감압 공정 모두 에칭 속도는 HCI 가스 농도의 2승[X ]에 비례하였으며, 명목상 활성화 에너지는 0∼11 Kcal/mole인 것으로 나타났다. 이러한 결과로부터, 감압 공정에서 HCl 가스에 의해 실리콘이 에칭되는 것은 대기압 공정에서와 같이 다음과 같은 반응에 의해 일어난다고 예측된다; Si + 2HCl ↔SiCl2 + H2.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2006년도 하계종합학술대회
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• pp.985-986
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• 2006

The epitaxial $KTa_{0.524}Nb_{0.446}Ti_{0.03}O_3$ films with 3% Ti were investigated. Titanium (+4) substitution on the Nb/Ta site should reduce dielectric losses of KTN: Ti film by introducing an acceptor state. This acceptor state traps electrons due to oxygen vacancies that form during oxide film growth. KTN:Ti films were grown using pulsed laser deposition, and then annealed at different temperatures in oxygen ambient. The crystallinity, and surface morphology of KTN:Ti film were investigated using x-ray diffraction, and atomic force microscopy. The dielectric properties of Ti doped KTN films measured for unannealed and annealed films will be reported. Tunability and dielectric loss of as-deposited KTN:Ti film were determined to be 10% and 0.0134, respectively. For films annealed at $800^{\circ}C$ and $900^{\circ}C$, the dielectric loss decreased but with a decrease in tunability as well.

• 한국결정성장학회지
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• 제9권3호
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• pp.295-298
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• 1999

High quality of $Er_{2}O_{3}$ doped $LiNbO_{3}$ single crystal thin films were grown by the liquid phase epitaxial (LPE) method using $Er_{2}O_{3}$ doped at concentrations of 1,3, and 5 mol% respectively. After the growth of single crystal thin film, the crystallinity and the lattice mismatch along the c-axis between the film and the substrate was examined as a function of the variations of{{{{{Er}_{2}{O}_{3}}}}} dopant concentration using a X-ray double crystal technique. There was no lattice mismatch along the c-axis for the undoped film and those doped with 1 and 3 mol% of $Er_{2}O_{3}$. For 5 mol% of $Er_{2}O_{3}$ doped film, the lattice mismatch was $7.86{\times}10^{-4}$nm along the c-axis.

• 한국결정성장학회지
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• 제9권3호
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• pp.289-294
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• 1999

The charged clusters or particles, which contain hundreds to thousands of atoms or even more, are suggested to from in the gas phase in the thin film processes such as CVD, thermal evaporation, laser ablation, and flame deposition. All of these processes are also phase synthesis of the nanoparticels. Ion-induced or photo-induced nucleation is the main mechanism for the formation of these nanoclusters or nanoparticles in the gas phase. Charge clusters can make a dense film because of its self-organizing characteristics while neutral ones make a porous skeletal structure because of its Brownian coagulation. The charged cluster model can successfully explain the unusual phenomenon of simultaneous deposition and etching taking place in diamond and silicon CVD processes. It also provides a new interpretation on the selective deposition on a conducting material in the CVD process. The epitaxial sticking of the charged clusters on the growing surface is getting difficult as the cluster size increases, resulting in the nanostructure such as cauliflower or granular structures.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2001년도 추계종합학술대회
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• pp.665-668
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• 2001

최근 소자의 크기가 작아짐에 따라 집적도가 향상되었으며 크기 감소로 인한 전류-전압 특성의 열화 및 기생 커패시턴스에 의한 성능감쇠가 발생하였다. 이런 문제들을 해결하기 위해 여러 가지 구조들이 개발되고 있으며 본 논문에서는 고농도로 도핑된 ground plane 층위에 적층하여 만든 EPI 구조에 대해 조사 분석하였다. 이 구조의 특성과 임팩트 이온화 및 전계 그리고 I-V 특성 곡선을 저농도로 도핑된 LDD(Lightly Doped Drain) 구조와 비교 분석하였다. 소자의 채널 길이는 0.l0$\mu\textrm{m}$부터 0.06$\mu\textrm{m}$까지 0.01$\mu\textrm{m}$씩 스케일링하여 시뮬레이션 하였다.

• 한국전기전자재료학회논문지
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• 제13권10호
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• pp.828-833
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• 2000

Growth characteristics and microstructure of AIN thin films grown by plasma assisted molecular beam epitaxy on Si substrates have been investigated. Growing temperature and substrate orientation were chosen as major variables of the experiment. Reflection high energy electron diffraction (RHEED), X-ray diffraction (XRD), atomic force microscopy (AFM) and transmission electron microscopy/diffraction (TEM/TED) techniques were employed to characterize the micorstructure of the films. On Si(100) substrates, AlN thin films were grown along the hexagonal c-axis preferred orientation at temperature range 850-90$0^{\circ}C$. However on Si(111), the AlN films were epitaxially grown with directional coherency in AlN(0001)/Si(111), AlN(1100)/Si(110), and AlN(1120)/Si(112) at 85$0^{\circ}C$ and the epitaxial coherencry seemed to be slightly distorted with increasing temperature. The microstructure of AlN thin films on Si(111) substrates showed that the films include a lot of crystal defects and there exist micro-gaps among the columns.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 초전도 자성체 연구회
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• pp.30-33
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• 2003

YBCO coated conductor, also called the 2nd generation high temperature superconducting wire, consists of oxide multi-layer hetero-epitaxial thin films. Pulsed laser deposition (PLD) is one of many film deposition methods used to make coated conductor, and is the one known to be the best to make superconducting layer so far. As a part of the effort to make long length coated conductor, the optimum deposition condition of YBCO film on single crystal substrate (SrTiO3) was investigated using PLD. Substrate temperature, oxygen partial pressure, and laser fluence were varied to find the best combination to grow high quality YBCO film.

• ETRI Journal
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• 제13권4호
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• pp.70-79
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• 1991

$In_1-x$$GA_X$$As_y$$P_1-y$ has a very wide range of applications in optoelectronic devices especially for optical communications because $In_1-x$$GA_X$$As_y$$P_1-y$ has the bandgap of the lowest dispersion ($1.3\mum$) and the lowest loss ( $1.55\mum$) of the optical fiber by changing the composition. The quality of $In_1-x$$GA_X$$As_y$$P_1-y$ epitaxial layer is believed to have a significant effect on the performance of device. The OMVPE growth conditions for the latticematched $In_1x$$GA_X$$As_y$$P_1-y$/InP were investigated. Effects of growth conditions such as V/III ratio, growth temperature, and Ga source material on the electrical and optical properties were studied. The composition, electrical and optical properities of $In_1-x$$GA_X$$As_y$$P_1-y$ were characterized using double crystal X-ray diffractometer (DCD), photoluminescence (PL), XPS(ESCA) and Hall measurement.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2004년도 춘계학술대회
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• pp.1382-1387
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• 2004

From the viewpoint of a macro state, there is no thermal boundary resistance (TBR) at an interface if both surfaces at an interface are perfectly contacted. However, recent molecular dynamics (MD) studies reported that there still exists the TDR at the interface in an ideal epitaxial superlttice. Our previous studies suggested the model to predict the TBR not only quantitatively also qualitatively in superlattices. The suggested model was based on the classical theory of a wave reflection, and provided highly satisfactory results for an engineering purpose. However, it was not the complete model because our previous model was derived by considering only the effects from a mass ratio and a potential ratio of two species. The interaction of two species presented by the Lennard-Jones (L-J) potential is governed by the mutual ratio of the masses, the potential well depths, and the diameters. In this study, we performed the preliminary simulations to investigate the effect resulting from the diameter ratio of two species for the completion of our model and confirmed that it was also a ruling factor to the TBR at an interface in superlattices.

• 한국자기학회지
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• 제17권6호
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• pp.246-252
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• 2007

본 논문에서는 출발원료 배합비 및 육성 파라미터가 LPE(Liquid Phase Epitaxy)법으로 육성된 자성 가넷 막의 특성에 미치는 영향을 조사하며, 광 CT의 페러데이 회전자용으로서 적합한 막의 육성 조건을 제시한다. 막을 평가하기 위하여 조사한 특성은 막후, 표면 모폴로지, X선 회절, 격자상수, 막과 기판(단결정 비자성 가넷 웨이퍼)사이의 격자상수의 부정합, 페러데이 회전각 등이었다. 또한, 육성된 자성 가넷 막을 이용하여 광 CT를 제작하고, 성능을 평가했다.