• Title/Summary/Keyword: Epitaxial

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The effects of oxygen on selective Si epitaxial growth using disilane ane hydrogen gas in low pressure chemical vapor deposition ($Si_2H_6$$H_2$ 가스를 이용한 LPCVD내에서의 선택적 Si 에피텍시 성장에 미치는 산소의 영향)

  • 손용훈;박성계;김상훈;이웅렬;남승의;김형준
    • Journal of the Korean Vacuum Society
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    • v.11 no.1
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    • pp.16-21
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    • 2002
  • Selective epitaxial growth(SEG) of silicon were performed at low temperature under an ultraclean environment below $1000^{\circ}C$ using ultraclean $Si_2H_6$ and $H_2$ gases ambient in low pressure chemical vapor deposition(LPCVD). As a result of ultraclean processing, epitaxial Si layers with good quality were obtained for uniform and SEG wafer at temperatures range 600~$710^{\circ}C$ and an incubation period of Si deposition only on $SiO_2$ was found. Low-temperature Si selectivity deposition condition and epitaxy on Si were achieved without addition of HCl. The epitaxial layer was found to be thicker than the poly layer deposited over the oxide. Incubation period prolonged for 20~30 sec can be obtained by $O_2$addition. The surface morphologies & cross sections of the deposited films were observed with SEM, The structure of the Si films was evaluated XRD.

Single Source Chemical Vapor Deposition of Epitaxial Cubic SiC Films on Si (입방형 탄화규소 박막의 적층 성장)

  • 이경원;유규상;구수진;김창균;고원용;조용국;김윤수
    • Journal of the Korean Vacuum Society
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    • v.5 no.2
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    • pp.133-138
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    • 1996
  • Epitaxial cubic silicon carbide films have been deposited on carbonized Si(001) substrates using the single precursor 1, 3-disilabutane in the temperature range 900-$1000^{\circ}C$ under high vacuum conditions. The films grown were characterized by in situ RHEED, XPS, XRD, x-ray pole figure, SEM, and TEM. The results show that epitaxial cubic SiC films with smooth morphology and good crystallinity were formed in this temperature range. The single precursor 1, 3-disilabutane has been found suitable for the epitaxial growth of cubic SiC on Si(001) substrates.

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Textured Surface Epitaxial Base Silicon Solar Cell (Textured 표면을 갖는 에피텍셜 베이스 실리콘 태양전지)

  • 장지근;임용규;정진철
    • Journal of the Microelectronics and Packaging Society
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    • v.10 no.2
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    • pp.33-37
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    • 2003
  • The new textured surface epitaxial base(TSEB) cell as a high efficiency Si solar cell was fabricated and its eletro-optical characteristics were investigated. The fabricated device showed the open circuit voltage of 0.62 V, the short circuit current of 40 mA, the fill factor of 0.7, and the efficiency of 16% under the incident light of AM-1 100 mW/$cm^2$. The TSEB cell proposed in this paper has the structural superiority in the fabrication of high efficiency solar cell due to the carrier drift transport in the optical absorption region and the formation of back surface field by $P^-/P^+$ epitaxial base, and the low emitter series resistance by insertion of $n^+$ buried contact.

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In-situ Growth of Epitaxial PbVO3 Thin Films under Reduction Atmosphere

  • Oh, Seol Hee;Jin, Hye-Jin;Shin, Hye-Young;Shin, Ran Hee;Yoon, Seokhyun;Jo, William;Seo, Yu-Seong;Ahn, Jai-Seok
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.361.1-361.1
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    • 2014
  • PbVO3 (PVO), a polar magnetic material considered as a candidate of multiferroic, has ferroelectricity along the c-axis and 2-dimensional antiferromagnetism lying in the in-plane through epitaxial growth [1,2]. PVO thin films were grown on LaAlO3 (001) substrates under reduction atmosphere from a stable Pb2V2O7 sintered target using pulsed laser deposition method. Epitaxial growth of the PVO films is possible only under Ar atmospheren with no oxygen partial pressure. X-ray diffraction was used to investigate the phase formation and texture of the films. We confirmed epitaxial growth of the PVO films with crystalline relationship of PbVO3[001]//LaAlO3[001] and PbVO3[100]//LaAlO3[100]. In addition, surface morphology of the films displays drastic changes in accordance with the growth conditions. Elongated PVO grains are related to the Pb2V2O7 pyrochlore structure. The relation between structural deformation and ferroelectricity in the PVO films was examined by local measurement of piezoresponse force microscopy.

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Epitaxial Growth of CoSi2 Layer on (100)Si Substrate using CoNx Interlayer deposited by Reactive Sputtering (반응성 스퍼터링법으로 증착된 CoNx 중간층을 이용한 (100)Si 기판 위에서의 에피택셜 CoSi2 성장 연구)

  • Lee, Seung-Ryul;Kim, Sun-Il;Ahn, Byung-Tae
    • Korean Journal of Materials Research
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    • v.16 no.1
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    • pp.30-36
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    • 2006
  • A novel method was proposed to grow an epitaxial $CoSi_2$ on (100)Si substrate. A $CoN_x$ interlayer was deposited by reactive sputtering of Co in an Ar+$N_2$ flow. From the Ti/Co/$CoN_x$/Si structure, a uniform and thin $CoSi_2$ layer was epitaxially grown on (100)Si by annealing above $700^{\circ}C$. Two amorphous layers were found at the $CoN_x$/Si interface, where the top layer has a silicon nitride (Si-N) bonding state with some Co content and the bottom layer has a Co-Si intermixing state. The SiNx amorphous layer seems to play a critical role of suppressing the diffusion of Co into Si substrate for the direct formation of epitaxial $CoSi_2$.

Analysis on the Flow and Heat Transfer in a Large Scale CVD Reactor for Si Epitaxial Growth (Si 선택적 성장을 위한 대형 CVD 반응기 내의 열 및 유동해석)

  • Jang, Yeon-Ho;Ko, Dong Guk;Im, Ik-Tae
    • Journal of the Semiconductor & Display Technology
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    • v.15 no.1
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    • pp.41-46
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    • 2016
  • In this study, gas flow and temperature distribution in the multi-wafer planetary CVD reactor for the Si epitaxial growth were analyzed. Although the structure of the reactor was simplified as the first step of the study, the three-dimensional analysis was performed taking all these considerations of the revolution of the susceptor and the rotation of satellites into account. From the analyses, a reasonable velocity field and temperature field were obtained. However, it was found that analyses including the upper structure of the reactor were required in order to obtain more realistic temperature results. DCS mole fraction above the satellite surface and the susceptor surface without satellite was compared in order to check the gas species mixing. We found that satellite rotation helped gases to mix in the reactor.

Influence of MBE Growth Temperature on the Sulfur Compositional Variation Of ZnSSe Epitaxial Layers on GaAs Substrates

  • Kim, Dong-Lyeul;Bae, In-Ho;Son, Jeong-Sik;Kim, In-Su;Lee, Jae-Young m;Akira Yoshida
    • Transactions on Electrical and Electronic Materials
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    • v.1 no.3
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    • pp.18-22
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    • 2000
  • In this work, we reported the sulfur compositional variation of ZnS$\_$x/Se$\_$1-x/ epitaxial layers with growth temperature and BEP ration of ZnX/Se/)P$\_$ZnS//P$\_$Se/) grown on GaAs substrates by molecular beam epitaxy. The sulfur composition of ZnSSe epitaxial layers was varied sensitively on the growth temperature and show different linear relationship with growth temperature and BEP ration of ZnS/Se(P$\_$ZnS//P$\_$Se/), which revealed -0.107 %$\^{C}$ at (P$\_$ZnS//P$\_$Se/)=0.30 and -0.052 %$\^{C}$ at (P$\_$ZnS//P$\_$Se/)=0.158 rspectively. A reference data for the accurate control of the sulfur composition and the growth of high quality ZnSSe/GaAs epitaxial layers was provided.

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Epitaxy of Si and Si1-xGex(001) by ultrahigh vacuum ion-beam sputter deposition

  • Lee, N. E.;Greene, J. E.
    • Journal of Korean Vacuum Science & Technology
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    • v.2 no.2
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    • pp.107-117
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    • 1998
  • Epitaxial undoped and Sb-doped si films have been grown on Si(001) substrates at temperatures T between 80 and 750$^{\circ}C$ using energetic Si in ultra-high-vacuum Kr+-ion-beam sputter deposition(IBSD). Critical epitaxial thicknesses te, The average thickness of epitaxial layers, in undoped films were found to range from 8nm at Ts=80$^{\circ}C$ to > 1.2 ${\mu}$m at Ts=300$^{\circ}C$ while Sb incorporation probabilities $\sigma$sb varied from unity at Ts 550$^{\circ}C$ to 0.1 at 750$^{\circ}C$. These te and $\sigma$Sb values are approximately one and one-to-three orders of magnitude, respectively, higher than reported results achieved with molecular-beam epitaxy. Plan-view and cross-sectional transmission electron microscopy, high-resolution x-ray diffraction, channeling and axial angular-yield profiles by Rutherford back scattering spectroscopy for epitaxial Si1-x Gex(001) alloy films (0.15$\leq$x$\leq$0.30) demonstrated that the films are of extremely high crystalline quality. critical layer thicknesses hc the film thickness where strain relaxation starts, I these alloys wre found to increase rapidly with decreasing growth temperature. For Si0.70 Ge0.30, hc ranged from 35nm at Ts=550$^{\circ}C$ to 650nm at 350$^{\circ}C$ compared to an equilibrium value of 8nm.

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The Influence of Hydrogen Intercalation on the Nanomechanical Properties of Epitaxial Graphene on SiC Substrates

  • Kwon, Sangku;Ko, Jae-Hyeon;Yang, G.E.;Kim, Won-Dong;Kim, Yong-Hyun;Park, Jeong Young
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.129.1-129.1
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    • 2013
  • Atomically-thin graphene is the ideal model system for studying nanoscale friction due to its intrinsic two-dimensional anisotropy. Here, we report the reduced nanoscale friction of epitaxial graphene on SiC, investigated with conductive-probe atomic force microscopy/friction force microscopy in ultra-high vacuum. The measured friction on a buffer layer was found to be 1/8 of that on a monolayer of epitaxial graphene. Conductive probe atomic force microscopy revealed a lower conductance on the buffer layer, compared to monolayer graphene. We associate this difference in friction with the difference in total lateral stiffness. Because bending stiffness is associated with flexural phonons in two-dimensional systems, nanoscale frictional energy should primarily dissipate through damping with the softest phonons. We investigated the influence of hydrogen intercalation on the nanoscale friction. We found that the friction decreased significantly after hydrogen intercalation, which is related to loose contact between the graphene and the substrate that results in a lower bending stiffness.

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Selective Epitaxial Growth of Si and SiGe using Si-Ge-H-Cl System for Self-Aligned HBT Applications (Si-Ge-H-Cl 계를 이용한 자기정렬 HBT용 Si 및 SiGe의 선택적 에피성장)

  • 김상훈;박찬우;이승윤;심규환;강진영
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.7
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    • pp.573-578
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    • 2003
  • Low temperature selective epitaxial growth of Si and SiGe has been obtained using an industrial single wafer chemical vapor deposition module operating at reduced pressure. Epitaxial Si and heteroepitaxial SiGe deposition with Ge content about 20 % has been studied as extrinsic base for self-aligned heterojunction bipolar transistors(HBTs), which helps to reduce the parasitic resistance to obtain higher maximum oscillation frequencies(f$\_$max/). The dependence of Si and SiGe deposition rates on exposed windows and their evolution with the addition of HCl to the gas mixture are investigated. SiH$_2$Cl$_2$ was used as the source of Si SEG(Selective Epitaxial Growth) and GeH$_4$ was added to grow SiGe SEG. The addition of HCl into the gas mixture allows increasing an incubation time even low growth temperature of 675∼725$^{\circ}C$. In addition, the selectivity is enhanced for the SiGe alloy and it was proposed that the incubation time for the polycrystalline deposit on the oxide is increased probably due to GeO formation. On the other hand, when only SiGe SEG(Selective Epitaxial Growth) layer is used for extrinsic base, it shows a higher sheet resistance with Ti-silicide because of Ge segregation to the interface, but in case of Si or Si/SiGe SEG layer, the sheet resistance is decreased up to 70 %.