• International Journal of Precision Engineering and Manufacturing
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• v.9 no.1
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• pp.39-46
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• 2008

The end plates of fuel cell assemblies are used to fasten the inner stacks, reduce the contact pressure, and provide a seal between Membrane-Electrode Assemblies (MEAs). They therefore require sufficient mechanical strength to withstand the tightening pressure, light weight to obtain high energy densities, and stable chemical/electrochemical properties, as well as provide electrical insulation. The design criteria for end plates can be divided into three parts: the material, connecting method, and shape. In the past, end plates were made from metals such as aluminum, titanium, and stainless steel alloys, but due to corrosion problems, thermal losses, and their excessive weight, alternative materials such as plastics have been considered. Composite materials consisting of combinations of two or more materials have also been proposed for end plates to enhance their mechanical strength. Tie-rods have been traditionally used to connect end plates, but since the number of connecting parts has increased, resulting in assembly difficulties, new types of connectors have been contemplated. Ideas such as adding reinforcement or flat plates, or using bands or boxes to replace tie-rods have been proposed. Typical end plates are rectangular or cylindrical solid plates. To minimize the weight and provide a uniform pressure distribution, new concepts such as ribbed-, bomb-, or bow-shaped plates have been considered. Even though end plates were not an issue in fuel cell system designs in the past, they now provide a great challenge for designers. Changes in the materials, connecting methods, and shapes of an end plate allow us to achieve lighter, stronger end plates, resulting in more efficient fuel cell systems.

• Journal of the Korean Society for Precision Engineering
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• v.30 no.7
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• pp.769-776
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• 2013

The dynamic compliance characteristics of a prosthetic foot midgait are very important for natural performance in an amputee's gait and should be in a range that provides natural, stable walking. In this study, finite element analysis (FEA) and classical laminate theory were used to examine the mechanical characteristics of a carbon-epoxy composite laminate prosthetic foot as a function of variation in the lamination composition. From this analysis, an FEM model of a prosthetic keel, made from the composite material, was developed. The lamination composition of the keel was designed for improved stiffness. The prototype product was fabricated using an autoclave. Vertical loading response tests were performed to verify the simulation model. The results of the experiments were similar to those from simulations below the loading level of the gait, suggesting use of the proposed simulation model for prosthetic keel design.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.37 no.5
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• pp.707-713
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• 2013

Coupling bolts have replaced conventional fitted bolts in applications where the operator's safety during assembly/disassembly is of concern or where the cost of process interruption is significant. Coupling bolts have been installed on rotating flange couplings in a wide range of marine and power applications worldwide. Their use has been approved by all leading international and national classification societies and regulatory bodies. A coupling bolt is a hydraulically tensioned fitted bolt that creates a stable and rigid link between coupling flanges and simplifies assembly and disassembly. We measure the bolt dimensions for reverse engineering and study the standard of assembly-load using a mechanical formula in order to localize a coupling bolt for a shaft in a power plant. We experimentally obtain the friction coefficient and confirm the condition of bolt sets through structure analysis. We show the variation of contact pressure for the shape parameter in order to consider the result when redesigning a bolt.

• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.51 no.4
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• pp.504-511
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• 2015

In this paper, the results of evaluating the passenger comfort due to the standard deviation of acceleration in vertical and lateral direction regarding the ship response in irregular wave by ordinary strip method in regular wave and energy spectrum using linear superposition theory in order to evaluate the motion of experimental ship are as follows. According to the results of ship response, it was possible to find that, in order to reduce the motion of ship, a ship operating in bow sea was more stable than in quartering sea. In the results of analyzing the standard deviation of acceleration in vertical direction according to each component wave pattern, when there was a wave length of 56m and an average wave period of 6 sec, most of cases showed the peak value. And among them, the standard deviation was 0.35 which was the highest in head sea. And in case of lateral direction, the maximum value was shown in a wave length of 100m and an average wave period of 8 sec. And it was 0.16 in beam sea and ${\chi}=150^{\circ}$. In the evaluation of passenger comfort due to standard acceleration in vertical and lateral direction, it was 80% in head and bow sea. On the other hand, it was shown to be 15% in follow sea. Accordingly, when the expected wave height in a sea area where a training ship was intended to operate was known, it was possible to predict the routing of ship. And altering her course could reduce the passenger comfort by approximately 50%.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2004.10a
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• pp.233-244
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• 2004

ZnO epilayer were synthesized by the pulesd laser deposition(PLD) process on $Al_2O_3$ substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193nm) excimer laser. The epilayers of ZnO were achieved on sapphire ($Al_2O_3$)substrate at a temperature of $400^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are $8.27{\times}10^{16}\;cm^{-3}$ and $299\;{\textrm}cm^2/V.s$ at 293K. respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;3.3973\;eV\;-\;(2.69{\times}10^{-4}\;eV/K)T^2/(T+463K)$. After the as-grown ZnO epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO atmospheres has been investigated by the photoluminescence(PL) at 10K. The native defects of $V_{zn},\;Vo,\;Zn_{int},\;and\;O_{int}$ obtained by PL measurements were classified as a donors or acceptors type. In addition, we concluded that the heat-treatment in the oxygen atmosphere converted ZnO thin films to an optical p-type. Also, we confirmed that vacuum in $ZnO/Al_2O_3$ did not form the native defects because vacuum in ZnO thin films existed in the form of stable bonds.

• Journal of the Mineralogical Society of Korea
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• v.15 no.2
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• pp.140-144
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• 2002

The sample environment at high temperature for the four circle diffractometer at HANARO in Korea Atomic Energy Research Institute is developed. The performance test was carried out for a structurally known sample through the high temperature experiment with this equipment. In this study we found out that the developed sample environment is stable for a long time experiment at over 900 K. By the neutron diffraction from a single crystal of $LiTaO_3$(phase transition temperature about 900 K) at 298 and 913 K, the lithium atomic positions at both temperatures and disordered state of lithium atom at high temperature were confirmed. These are hardly possible to determine by the conventional X-ray diffraction method.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.05a
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• pp.553-556
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• 2013

Currently green growth and energy saving are major issues and solution using low-power LED lighting devices are gaining popularity. There are a few standards to control these LED lighting equipment and DMX512 protocol is a typical communication control standard used. DMX512 lighting control protocol is one of standard protocols widely used in various fields which include mainly stage lighting and landscape lighting. But in DMX512 protocol, line is to be connected to a wired connection. Advantage of wired connection is stable data transfer operation but it adds complexity and certain constraints as well in wired connection. To solve this problem, wired connection can be replaced efficiently with a wireless connection but for wireless, problem of data loss and two way communications arises. In this paper, these problems of wireless communication for DMX512 have been addressed and solutions for two way communications and data loss problem have been proposed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.386-391
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• 2003

Sing1e crystal $CuAlSe_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $410^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $CuAlSe_2$source at $680^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence(PL) and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $CuAlSe_2$ thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}\;cm^{-3}$ and $295\;cm^2/V{\cdot}\;s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;2.8382\;eV\;-\;(8.86\;{\times}\;10^{-4}\;eV/K)T^2/(T\;+\;155K)$. After the as-grown single crystal $CuAlSe_2$ thin films were annealed in Cu-, Se-, and Al-atmospheres, the origin of point defects of single crystal $CuAlSe_2$ thin films has been investigated by PL at 10 K. The native defects of $V_{Cd}$, $V_{Se}$, $Cd_{int}$, and $Se_{int}$ obtained by PL measurements were classified as donors or accepters. And we concluded that the heat-treatment in the Cu-atmosphere converted single crystal $CuAlSe_2$ thin films to an optical n-type. Also, we confirmed that Al in $CuAlSe_2/GaAs$ did not form the native defects because Al in single crystal $CuAlSe_2$ thin films existed in the form of stable bonds.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.5
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• pp.467-475
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• 2004

ZnO epilayer were synthesized by the pulsed laser deposition(PLD) process on $Al_2$ $O_3$substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193 nm) excimer laser. The epilayers of ZnO were achieved on sapphire(A $l_2$ $O_3$) substrate at a temperature of 400 $^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are 8.27${\times}$$10^{16}$$cm^{-3}$ and 299 $\textrm{cm}^2$/Vㆍs at 293 K, respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}$(T)= 3.3973 eV - (2.69 ${\times}$ 10$_{-4}$ eV/K) $T^2$(T＋463k). After the as-grown ZnO epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO atmospheres has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{Zn}$ , $V_{o}$ , Z $n_{int}$, and $O_{int}$ obtained by PL measurements were classified as a donors or accepters type. In addition, we concluded that the heat-treatment in the oxygen atmosphere converted ZnO thin films to an optical p-type. Also, we confirmed that vacuum in ZnO/A $l_2$ $O_3$did not form the native defects because vacuum in ZnO thin films existed in the form of stable bonds.s.s.s.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.10
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• pp.871-880
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• 2003

Single crystal CuAlSe$_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at 410 C with hot wall epitaxy (HWE) system by evaporating CuAlSe$_2$ source at 680 C. The crystalline structure of the single crystal thin films was investigated by the photoluminescence(PL) and double crystal X -ray diffraction (DCXD). The carrier density and mobility of single crystal CuAlSe$_2$ thin films measured with Hall effect by van der Pauw method are 9.24${\times}$10$\^$16/ cm$\^$-3/ and 295 cm$^2$/V $.$ s at 293 K, respectively. The temperature dependence of the energy band gap of the CuAlSe$_2$ obtained from the absorption spectra was well described by the Varshni's relation, Eg(T) = 2.8382 eV - (8.86 ${\times}$ 10$\^$-4/ eV/K)T$^2$/(T + 155K). After the as-grown single crystal CuAlSe$_2$ thin films were annealed in Cu-, Se-, and Al-atmospheres, the origin of point defects of single crystal CuAlSe$_2$ thin films has been investigated by PL at 10 K. The native defects of V$\_$cd/, V$\_$se/, Cd$\_$int/, and Se$\_$int/ obtained by PL measurements were classified as donors or acceptors. And we concluded that the heat-treatment in the Cu-atmosphere converted single crystal CuAlSe$_2$ thin films to an optical n-type. Also, we confirmed that Al in CuAlSe$_2$/GaAs did not form the native defects because Al in single crystal CuAlSe$_2$ thin films existed in the form of stable bonds.