• International Journal of Computer Science & Network Security
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• v.24 no.2
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• pp.53-58
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• 2024

This paper presents a novel miniaturized 3-D cubic antenna for use in wireless sensor network (WSN) application. The geometry of this antenna is designed as a cube including a meander dipole antenna. A truly omnidirectional pattern is produced by this antenna in both E-plane and H-plane, which allows for non-intermittent communication that is orientation independent. The operating frequency lies in the ISM band (centered in 2.45 GHz). The dimensions of this ultra-compact cubic antenna are 1.25*1.12*1cm3 which features a length dimension λ/11. The coefficient which presents the overall antenna structure is Ka=0.44. The cubic shape of the antenna is allowing for smart packaging, as sensor equipment may be easily integrated into the cube hallow interior. The major constraint of WSN is the energy consumption. The power consumption of radio communication unit is relatively high. So it is necessary to design an antenna which improves the energy efficiency. The parameters considered in this work are the resonant frequency, return loss, efficiency, bandwidth, radiation pattern, gain and the electromagnetic field of the proposed antenna. The specificity of this geometry is that its size is relatively small with an excellent gain and efficiency compared to previously structures (reported in the literature). All results of the simulations were performed by CST Microwave Studio simulation software and validated with HFSS. We used Advanced Design System (ADS) to validate the equivalent scheme of our conception. Input here the part of summary.

• Journal of Sensor Science and Technology
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• v.13 no.2
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• pp.157-167
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• 2004

A stoichiometric mixture of evaporating materials for $CuAlSe_{2}$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CuAlSe_{2}$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $680^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuAlSe_{2}$ single crystal thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}cm^{-3}$ and $295cm^{2}/V{\codt}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_{2}$ obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}(T)$ = 2.8382 eV - ($8.68{\circ}10^{-4}$ eV/K)$T^{2}$/(T + 155 K). The crystal field and the spin-orbit splitting energies for the valence band of the $CuAlSe_{2}$ have been estimated to be 0.2026 eV and 0.2165 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_{5}$ states of the valence band of the $CuAlSe_{2}$. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1-}$, $B_{1-}$, and $C_{1-}$ exciton peaks for n = 1.

• Journal of the Korean Chemical Society
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• v.38 no.11
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• pp.785-791
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• 1994

The $Sr_1-_xY_xMnO_3$ (x = 0.0∼1.0) system was synthesized using amorphous citrate process. The stability of various structures and the electronic transport properties of this system were investigated. X-ray diffraction study indicated that the $Sr_1-_xY_xMnO_3$ system has three different structures depending on composition, namely, 4L-hexagonal perovskite (when x is less than 0.3), pseudocubic perovskite (when x is 0.3∼0.7), and hexagonal nonperovskite (when x is larger than 0.7) structures. The structural changes and electronic properties were interpreted based on two factors, i.e., the size of cations and the oxidation state of manganese ion. When the concentration of Y substitution exceeds 30%, the Mn-Mn repulsive interaction dominates over intermetallic attraction, and thus structure changes to pseudocubic perovskite. In perovskite phase the unit cell dimensions increases with increasing $Mn^{3+}$ ions due to yttrium substitution. The band gap of $Sr_{0.9}Y_{0.1}MnO_3$ is greater than that of $Sr_{0.5}Y_{0.5}MnO_3$. The greater band gap of $Sr_{0.9}Y_{0.1}MnO_3$ indicates that the 4L-hexagonal structure is more stabilized than cubic perovskite due to the Mn-Mn bond.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.122.1-122.1
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• 2015

The dependence of electronic properties and local structure of tantalum oxide thin film on oxygen deficiency have been investigated by means of X-ray photoelectron spectroscopy (XPS), Reflection Electron Energy Loss Spectroscopy (REELS), and X-ray absorption spectroscopy (XAS). The XPS results showed that the oxygen flow rate change results in the appearance of features in the Ta 4f at the binding energies of 23.2 eV, 24.4 eV, 25.8, and 27.3 eV whose peaks are attributed to Ta1+, Ta2+, Ta3+, Ta4+, and Ta5+, respectively. The presence of nonstoichiometric state from tantalum oxide (TaOx) thin films could be generated by the oxygen vacancies. The REELS spectra suggested the decrease of band gap for tantalum oxide thin films with increasing oxygen deficiency. In addition, XAS spectra manifested both the increase of coordination number of the first Ta-O shell and a considerable reduction of the Ta-O bond distance with the decrease of oxygen deficiency.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.28 no.3
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• pp.32-43
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• 2014

This paper presents the intra capacitance modeling according to the winding method, section bobbin and coil structure for hybrid choke coil capable of the EMI attenuation of broad bands from lower frequency bands to higher frequency bands and high frequency type common-mode choke coil capable of the EMI attenuation of high frequency band used in the EMI Block of LED-TV SMPS. In case of high frequency type CM choke coil, it can be explained the parasitic capacitance of A type and section bobbin type winding methods among them is much smaller than the other. The first resonant frequency of the proposed CM choke coil tends to increase as the parasitic capacitance becomes small and its impedance characteristics also show improved performance as the first resonant frequency increases. In case of hybrid choke coil using rectangular copper wire, it has investigated its parasitic capacitance compared to CM choke coil of conventional toroidal type becomes small. Also it has confirmed through the experiment results that CE margin and RE margin in frequency bands 0.5MHz to 5MHz and 30MHz to 200MHz are respectively 10dB and 15dB greater than that of conventional type in case of one stage EMI filter structure adopting hybrid choke coil compared to two stage EMI Filter structure using two of each CM choke coil used in the lower and higher frequency bands or two of CM choke coil used in only the lower frequency bands. In the future, the hybrid choke coil and CM choke coil of high frequency type show it can be practically used in not only LED/LCD-TV SMPS but also several applications such as LED Lighting, Laptop Adapter, Server Power Supply and so on.

• Electrical & Electronic Materials
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• v.9 no.5
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• pp.463-469
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• 1996

The double insulating layer consisting of anodic oxide and ZnS was formed for HgCdTe metal insulator semiconductor(MIS) structure. ZnS was evaporated on the anodic oxide grown in H$_{2}$O$_{2}$ electrolyte. Recently, this insulating mechanism for HgCdTe MIS has been deeply studied for improving HgCdTe surface passivation. It was found through TEM observation that an interface layer is formed between ZnS and anodic oxide layers for the first time in the study of this area. EDS analysis of chemical compositions using by electron beam of 20.angs. in diameter and XPS depth composition profile indicated strongly that the new interface is composed of ZnO. Also TEM high resolution image showed that the structure of oxide layer has been changed from the amorphous state to the microsrystalline structure of 100.angs. in diameter after the evaporation of ZnS. The double insulating layer with the resistivity of 10$^{10}$ .ohm.cm was estimated to be proper insulating layer of HgCdTe MIS device. The optical reflectance of about 7% in the region of 5.mu.m showed anti-reflection effect of the insulating layer. The measured C-V curve showed the large shoft of flat band voltage due to the high density of fixed oxide charges about 1.2*10$^{12}$ /cm$^{2}$. The oxygen vacancies and possible cationic state of Zn in the anodic oxide layer are estimated to cause this high density of fixed oxide charges.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.193.1-193.1
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• 2014

This study was to investigate the electronic structure and optical properties of Na doped into NiO thin film using XPS and REELS. The films were grown by electron beam evaporation with varying the annealing temperature. The relationship between the electrical characteristics with the local structure of NiO thin films was also discussed. The x-ray photoelectron results showed that the Ni 2p spectra for all films consist of Ni 2p3/2 which indicate the presence of Ni-O bond from NiO phase and for the annealed film at temperature above $200^{\circ}C$ shows the coexist Ni oxide and Ni metal phase. The reflection electron energy loss spectroscopy spectra showed that the band gaps of the NiO thin films were slightly decreased with Na-doped into films. The Na-doped NiO showed relatively low resistivity compared to the undoped NiO thin films. In addition, the Na-doped NiO thin films deposited at room temperature showed the best properties, such as a p-type semiconducting with low electrical resistivity of $11.57{\Omega}.cm$ and high optical transmittance of ~80% in the visible light region. These results indicate that the Na doping followed by annealing process plays a crucial in enhancing the electrical and optical properties of NiO thin films. We believe that our results can be a good guide for those growing NiO thin films with the purpose of device applications, which require deposited at room temperature.

• Bulletin of the Korean Chemical Society
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• v.29 no.2
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• pp.438-444
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• 2008

A self-assembled monolayer of 2,2'-bipyridine (22BPY) molecules on Au(111) underwent a structural phase transition when the polarity of a bias voltage was switched in scanning tunneling microscopy (STM) experiments. The nature of two bright spots representing each 22BPY molecule on Au(111) in the high-resolution STM images was identified by calculating the partial density plots for a monolayer of 22BPY molecules adsorbed on Au(111) using tight-binding electronic structure calculations. The stacking pattern of the chains of 22BPY molecules on Au(111) was explained by examining the intermolecular interactions between the 22BPY molecules based on first principles electronic structure calculations for a 22BPY dimer, (22BPY)2. The structural instability of the 22BPY molecule arrangement caused by a change in the bias voltage switch was investigated by estimating the adsorbate-surface interaction energy using a point-charge approximation for Au(111).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.1
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• pp.67-74
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• 2002

A phosphor for Plasma Display Panel, BaMgAl$_{10}$ O$_{17}$ :Eu$^{2+}$, showing a blue emission band at about 450nm was prepared by a solid-state reaction using BaCO$_3$, $Al_2$O$_3$, MgO, Eu$_2$O$_3$ as starting materials wish flux AlF$_3$. The study of the behaviour of Eu in BAM phosphor was carried out by the photoluminescence spectra and the Rietveld method with X-ray and neutron powder diffraction data to refine the structural parameters such as lattice constants, the valence state of Eu, the preferential site of Mg atom and the site fraction of each atom. The phenomenon of the concentration quenching was abound 2.25~2.3wt% of Eu due to a decrease in the critical distance for energy transfer of inter-atomic Eu. Through the combined Rietveld refinement, R-factor, R$_{wp}$, was 8.11%, and the occupancy of Eu and Mg was 0.0882 and 0.526 at critical concentration. The critical distance of Eu$^{2+}$ in BAM was 18.8$\AA$ at 2.25% Eu of the concentration quenching. Furthermore, c/a ratio was decreased to 3.0wt% and no more change was observed over that concentration. The maximum entropy electron density was found that the modeling of $\beta$-alumina structure in BaMgAl$_{10}$ O$_{17}$ :Eu$^{2+}$correct coincided showing Ba, Eu, O atoms of z= 1/4 mirror plane.e.ane.e.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.245.2-245.2
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• 2013

Solution processed organic photovoltaic devices have relatively less attention compared to polymer photovoltaic devices even though they have high possibility to be developed because they have both advantages of polymer and organic, such as solution processable, no synthetic batch dependence of photovoltaic performance, high purity and high charge carrier mobility as well as relatively high efficiency (~7%). In addition, solution processed organic photovoltaic devices have an advantage of easiness to study the relationship between the molecular structure and photovoltaic performance due to its simple structure. In this work, five isoindigo based low band gap donor-acceptor-donor (D-A-D) small molecules with different electron donating strength were synthesized for investigating the relationship between the molecular structure and photovoltaic performance, especially, investigating the effects of different electron donating effect of donor group in isoindigo backbone to photovoltaic device performance. The variation of electron donating strength of donor group strongly affected the optical, thermal, electrochemical and photovoltaic device performances of isoindigo organic materials. The highest power conversion efficiency of ~3.2% was realized in bulk heterojuction photovoltaic device consisted of the ID3T as donor and PC70BM as acceptor. This work demonstrates the great potential of isoindigo moieties as electron deficient units as well as guideline for synthesis of donor-acceptor-donor (D-A-D) small molecules for realizing highly efficient solution processed organic photovoltaic devices.