• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1599-1602
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• 2002

$Zn_4SnSe_6$ and $Zn_4SnSe_6:Co^{2+}$ single crystals were by the chemical transport reaction method. They crystallized in the monoclinic structure. The direct energy band gaps of the $Zn_4SnSe_6$ and $Zn_4SnSe_6:Co^{2+}$ single crystals at 289K were found to be 2.146eV and 2.042eV. Optical absorption due to impurity in the $Zn_4SnSe_6:Co^{2+}$ single crystal was observed and described as originating from the electron transition between energy leveles of $Co^{2+}$ sited at $T_d$ symmetry point.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.05a
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• pp.27-30
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• 2006

In this paper, the undoped and Co-doped $Zn_4SnSe_6$ single crystals grown by the chemical transporting reaction(CTR) method using iodine as a transporting agent are investigated. For the crystal growth, the temperature gradient of the CTR furnace was kept at $680^{\circ}C$ for the source zone and at $780^{\circ}C$ for the growth zone for 7days. It was found from the analysis of x-ray diffraction that the $Zn_4SnSe_6$ and $Zn_4SnSe_6Co^{2+}$ compounds have a monoclinic structure. The direct optical energy band gap of the $Zn_4SnSe_6$ and $Zn_4SnSe_6Co^{2+}$ single crystals at 300K were found to be 2.146eV and 2.042eV.

• Transactions on Electrical and Electronic Materials
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• v.11 no.2
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• pp.85-88
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• 2010

Deep blue organic light emitting diodes (OLEDs) were fabricated using 5 wt.% doped BCzVBi with various blue host materials such as NPB, DPVBi, MADN and TPBi. A blue OLED device, using DPVBi as host material, was constructed via NPB ($500\;{\AA}$) / DPVBi:BCzVBi ($200\;{\AA}$) / Bphen ($300\;{\AA}$) / LiF ($20\;{\AA}$) / Al ($1,000\;{\AA}$) and it shows a maximum luminescence of $4,838\;cd/m^2$, a current density of $32.7\;mA/cm^2$, a luminous efficiency of 3.3 cd/A and CIExy coordinates of (0.19, 0.15) at 4.5 V whereas the luminous efficiencies and CIExy coordinates of other blue OLEDs using NPB, MADN and TPBi as host materials have 1.1, 2.6 and 2.0 cd/A and (0.15, 0.11), (0.15, 0.10) and (0.15, 0.10), respectively. Energy transfer mechanisms between BCzVBi and its host materials were discussed with an energy band structure of host materials.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.12
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• pp.847-851
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• 2015

The effects of Al-substitution on thermoelectric and charge transport properties of BiCuOSe compounds were investigated. The compounds were prepared by a solid-state reaction and consolidated by SPS (spark plasma sintering). In spite of the increase in the hole concentration with increasing Al amounts in BiCuOSe compound, the electrical conductivity at room temperature was kept constant due to the reduction of mobility. However, electrical conductivities of Al-substituted BiCuOSe compounds at elevated temperature (> 600 K) were higher than those of BiCuOSe, and this result was discussed in terms of it's the band gap energy. The Seebeck coefficient was drastically reduced when Al was substituted in Bi site, which indicated that the electronic structure was influenced by the Al-substitution into Bi-site.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.4
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• pp.62-66
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• 1989

$Bi_2S_3$ polycrystalline and $Bi_2S_3$ amorphous thin tilm were grown by the evaporation method. The measured lattic parameters were $a=1.708{\AA},\;b=0.351{\AA},\;and\;C=3.943{\AA}$ at substrate temperature $210^{cric}C$ were shown to have the orthorhombic structure. The energy gape of $Bi_2S_3$ polycrystalline that was made from thin film were measured to be 1.375eV at $289^{cric}K.$ The optical band gap of $Bi_2S_3$ amorphous thin film was measured to be 1.71eV at $289^{cric}K.$ It was supposed to mechanism that a photon absorption was changed at the center of 674nm (1.84eV)

• Journal of the Korean Magnetics Society
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• v.9 no.5
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• pp.223-226
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• 1999

We have investigated the magnetic properties and the electronic structures of Tc half-monolayer (0.5-ML) on Pd(001) using the full-potential linearized augmented plane wave(FLAPW) energy band method. We calculated the total energies for ferromagnetic and paramagnetic states to determine the stable magnetic state. The calculated results show that the total energy of the ferromagnetic state is lower than that of the paramagnetic one. The overlayer Tc 0.5-ML has considerably large magnetic moment $(2.09\;{\mu}_B)$, while the substrate Pd layers have been negatively polarized. The calculated density of states and total electrons inside the muffin-tin (MT) sphere are presented and discussed in relation with the magnetic properties.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.52 no.1
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• pp.1-5
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• 2003

Zn$_4$SnSe$_{6}$ and Zn$_4$SnSe$_{6}$ :Co$^{2+}$ single crystals were by the chemical transport reaction method. They crystallized in the monoclinic structure. The direct energy band gaps of the Zn$_4$SnSe$_{6}$ and Zn$_4$SnSe$_{6}$ :Co$^{2+}$single crystals at 289k were found to be 2.146eV and 2.042eV. Optical absorption due to impurity in the Zn$_4$SnSe$_{6}$ :Co$^{2+}$single crystal was observed and described as originating from the electron transition between energy levels of Co$^{2+}$ion sited at T$_{d}$ symmetry point.y point.

• Bulletin of the Korean Chemical Society
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• v.34 no.9
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• pp.2737-2740
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• 2013

The layered $KTiNbO_5$ was successfully synthesized with titanium(IV) isopropoxide and niobium oxalate by a novel polymerized complex (PC) method. The morphology and structure of the as-prepared sample was characterized by means of High-Resolution Transmission Electron Microscope, powder X-ray diffraction, and Laser Raman Spectroscopy. The spectral response characteristic was recorded by using UV-vis Diffuse Reflectance Spectroscopy. Results show that $KTiNbO_5$ as-prepared by PC method presents an uniform morphology of nano-particles, the mean particle sizes is ca. 28 nm corresponding to the (002), and the crystal structure can be well indexed to the orthorhombic phase. The sample as-prepared by PC method has higher band gap energy than that of the sample prepared by a solid-state reaction method due to the quantum size effect.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.2
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• pp.164-169
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• 2008

The effects of the antisite related defects on the electronic structure of silica and the gate leakage current have been investigated using first-principles calculations. Energy levels related to the antisite defects in silicon dioxide have been introduced into the bandgap, which are nearly 2.0 eV from the top of the valence band. Combining with the electronic structures calculated from first-principles simulations, tunneling currents through the silica layer with antisite defects have been calculated. The tunneling current calculations show that the hole tunneling currents assisted by the antisite defects will be dominant at low oxide field whereas the electron direct tunneling current will be dominant at high oxide field. With increased thickness of the defect layer, the threshold point where the hole tunneling current assisted by antisite defects in silica is equal to the electron direct tunneling current extends to higher oxide field.

• Journal of Powder Materials
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• v.15 no.3
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• pp.210-213
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• 2008

Elongated CdSe nanoparticles with a diameter of 3-7nm have been successfully synthesized using two surfactants of trioctylphospine (TOP) and hexadecylamine (HDA) at $160^{\circ}C$. The formation of elongated CdSe nanoparticles is possibly due to the cooperative effects from both the different binding capability of two surfactants (TOP and HDA) and intrinsically anisotropic crystal structure of the CdSe. The electron diffraction pattern of CdSe nanoparticles revealed the formation of wurzite phase. The CdSe samples showed red-shifted wavelength from 560 to 580nm with increasing the refluxing time due to the gradual growth of CdSe nanoparticles. The relatively broad absorption band can be attributed to the surface state of CdSe nanoparticles. The possible formation mechanism of elongated CdSe nanoparticles was proposed and the characteristics of CdSe have been discussed as well.