• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.06a
• /
• pp.99-100
• /
• 2007

ZnO films on $Al_2O_3$ substrates were grown using a pulsed laser deposition method. Through photoluminescence (PL) and X-ray diffraction (XRD) measurements, the optimum growth conditions for the ZnO growth were established. The results of the XRD measurements indicate that ZnO films were strongly oriented to the c-axis of the hexagonal structure and epitaxially crystallized under constraints created by the substrate. The full width half maximum for a theta curve of the (0002) peak was $0.201^{\circ}$. Also, from the PL measurements, the grown ZnO films were observed to give free exciton behaviour, which indicates a high quality of the epilayer. The Hall mobility and carrier density of the ZnO films at 293 K were estimated to be $299\;cm^2/V\;s$ and $8.27\;{\times}\;10^{16}\;cm^{-3}$, respectively. The absorption spectra revealed that the temperature dependance of the optical band gap on the ZnO films was $E_g(T)\;=\;3.439\;eV\;-\;(5.30\;{\times}\;10^{-4}\;ev/K)T^2(367\;+\;T)$.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2011.02a
• /
• pp.438-438
• /
• 2011

White light-emitting diodes (LEDs), the so-called next-generation solid-state lighting, offer benefits in terms of reliability, energy-saving, maintenance, safety, lead-free, and eco-friendly. Recently, rare-earth-doped oxynitride or nitride compounds have attracted a great deal of interest as a photoluminescent material because of their unique luminescent property, especially for white LEDs applications. Ce doped ${\beta}$-SiAlON has been studied as a wavelength conversion phosphor in white LEDs thanks to its high absorption rates, high quantum efficiency, and excellent thermal stability. Previously researches were not enough to understand the detail mechanism and characteristics of ${\beta}$-SiALON. The bandgap structures and electronic structures were not exact due to limitation of calculation methods. In this study, to elucidate the Ce doping effect on the SiAlON system, accurate band structures and electronic structure of the Ce doped ${\beta}$-SiAlON was intensively investigated using density functional theory calculations. In order to get a better description of the band gaps, MBJLDA method were used. We have found a single Ce atom site in ${\beta}$-SiAlON super cell. Furthermore, the density of state, band structure and lattice constant were intensively investigated.

• Journal of the Korean Magnetics Society
• /
• v.5 no.5
• /
• pp.442-446
• /
• 1995

Electronic structures of Fe overlayers on Cr(Fe/Cr) films, with an Fe coverage of $1-20{\AA}$, have been investigated by using photoemission spectroscopy. Experimental results are compared with supercell band structure calculations for a system with monolayer (ML) Fe on each side of five layer Cr, Fe(1ML)/Cr(5ML)/Fe(1ML). The extracted Fe 3d partial spectral weight in Fe/Cr exhibits very interesting features for very thin Fe overlayers. First, a sharp emissionnear the Fermi energy is observed, which is expected to originate primarily from hybridization between Fe and Cr 3d electrons at the Fe/Cr interface, and partially from the Fe 3d surface states in the Fe overlayer. Second, other structures are observed at higher binding energies which resemble the Cr 3d valence bands, also suggesting large hybridization between Fe and Cr 3d states at the Fe/Cr interface. These conjectures are confirmed by band structure calculations for Fe(1ML)/Cr(5ML)/Fe(1ML).

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.18 no.2 s.117
• /
• pp.206-212
• /
• 2007

In this paper, a novel power/ground plane using the hybrid-cell electromagnetic band-gap(EBG) structure is proposed for the wide-band suppression of the ground bound noise(GBN) or simultaneous switching noise(SSN). The -30 dB stopband of the proposed structure starts from a few hundred MHz where the GBN/SSN energy is dominant. The distinctive features of this new structure are the thin spiral strip line and hybrid-cells. They realize the enhanced inductance and the shorter period of the EBG lattice. As a result, the lower cut-off frequency and bandwidth of the -30 dB stopband becomes lower and wider, respectively. In addition, the proposed structure has smaller number of resonance modes between power/ground planes and performs a low EMI behavior compared with the reference board.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.06a
• /
• pp.179-180
• /
• 2007

Single crystal $AgGaSe_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $AgGaSe_2$ source at $630^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $AgGaSe_2$ thin films measured with Hall effect by van der Pauw method are $4.05{\times}\;10^{16}/cm^3$, $139\;cm^2/V{\cdot}s$ at 293 K. respectively. The temperature dependence of the energy band gap of the $AgGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.9501\;eV\;-\;(8.79{\times}10^{-4}\;eV/K)T^2$/(T + 250 K). The crystal field and the spin-orbit splitting energies for the valence band of the $AgGaSe_2$ have been estimated to be 0.3132 eV and 0.3725 eV at 10 K, respectively, by means of the phcitocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}So$ definitely exists in the $\Gamma_5$ states of the valence band of the $AgGaSe_2$. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-, and $C_1$-exciton peaks for n = 1.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.261-261
• /
• 2010

Photonic band gap (PBG) materials have been of great interest due to their potential applications in science and technology. Their applications can be further extended when PBG becomes tunable against various chemical and electrical stimuli. In recent, it was found that tunable photonic band gap materials can be achieved by incorporating stimuli-responsive smart gels into PBG materials. For example, the characteristic volume phase transition of gels in response to the various external stimuli including temperature, pH, ionic strength, solvent compositions and electric field were recently combined with the unique optical properties of photonic crystals to form unprecedented highly responsive optical components. Since these responsive photonic crystals are capable of reversibly converting chemical or electrical energy into characteristic optical signals, they have been considered as a good platform for label-free chemical or biological detection, actuators or optical switches as well as a model system for investigating gel swelling behavior. Herein, we report block copolymer photonic gels self-assembled from polystyrene-b-poly (2-vinyl pyridine) (PS-b-P2VP) block copolymers. In this talk, we are going to demonstrate that selective swelling of lamellar structure can be effectively utilized for fabricating PBG materials with extremely large tunability. Optical properties and their applications will be discussed.

• Journal of the Computational Structural Engineering Institute of Korea
• /
• v.32 no.3
• /
• pp.141-147
• /
• 2019

In this paper, a systematic beam splitter design for multi-beam forming is proposed. The objective of this research is to a design beam splitter that splits and focuses scattering microwaves into intense beams in multiple directions. It is difficult to split multi-beam to non-specific directions with theoretical approaches. Therefore, instead of using transformation optics(TO), which is a widely used process for controlling electromagnetic wave propagation, we used a systematic design process called the phase field design method to obtain an optimal topological structure of beam splitter. The objective function is to maximize the norm of electric field of the target areas of each direction. To avoid island structure and obtain the structure in one body, volume constraint is added to the optimization problem by using augmented Lagrangian. Target frequency is set to X-band 10GHz. The optimal beam splitter performed well in multi-beam forming and the transported electric energy of target areas improved. A frequency dependency test was conducted in the X-band to determine effective frequency range.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
• /
• v.13 no.6
• /
• pp.545-555
• /
• 2020

This paper presented efficient transceiver structure using sub-band processing for underwater communication in terms of covertness and performance improvement. In aspect of covertness, encrypted coded-bits are divided into groups, and center frequency and sub band are determined by coded-bits of each group. Therefore, as center frequencies are changed randomly, it maintain the covertness effectively. In aspect of performance improvement, the performance of underwater communication mainly depends on multi-path propagation characteristics, Doppler-spread, and frame synchronization. Accordingly, in order to overcome these effects, non-coherent energy detector and turbo equalization method are employed in receiver side. Furthermore, optimal frame synchronization was proposed. Through the simulation and lake experiment, performance analysis was conducted. Especially in the lake experiment, as a result of applying optimal frame synchronization method to receiver structure, errors are corrected in most frames.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.17 no.5
• /
• pp.179-186
• /
• 2007

Single crystal $CdGa_2Se_4$ layers were grown on a thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with the hot wall epitaxy(HWE) system by evaporating the polycrystal source of $CdGa_2Se_4$ at $630^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of single crystal $CdGa_2Se_4$ thin films measured with Hall effect by van der Pauw method are $8.27{\times}10^{17}cm^{-3},\;345cm^2/V{\cdot}s$ at 293 K, respectively. The photocurrent and the absorption spectra of $CdGa_2Se_4/SI$(Semi-Insulated) GaAs(100) are measured ranging from 293 K to 10 K. The temperature dependence of the energy band gap of the $CdGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation $E_g(T)=2.6400eV-(7.721{\times}10^{-4}eV/K)T^2/(T+399K)$. Using the photocurrent spectra and the Hopfield quasicubic model, the crystal field energy(${\Delta}cr$) and the spin-orbit splitting energy(${\Delta}so$) far the valence band of the $CdGa_2Se_4$ have been estimated to be 106.5 meV and 418.9 meV at 10 K, respectively. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1^-},\;B_{1^-},\;and\;C_{11}-exciton$ peaks.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.5 no.1
• /
• pp.78-86
• /
• 1995

Abstract We have investigated the structure and the conductivity of the CdTe films evaporated on the glass substrates by Electron Beam Evaporator (EBE) technique. The structure is observed to be polycrystalline whose phase is mainly hexagonal phase with some cubic phase. Dark electric conductivity is of the order of $1-^{-8} {\Omega}^{-1} cm^{-1}$ and slightly increased by annealing for an hour at $300^{\circ}C$. Activation energy calculated from the electrical conductivity which varies with increasing temperature is 1.446 eV in the case of room temperature substrates. The values of optical band gap are 1.52 eV in direct transition whereas 1.44 eV in indirect. The photoconductivity of the films is of the order of $1-^{-8} {\Omega}^{-1} cm^{-1}$ and the peak energy is about 600 nm in the room temperature. The photoconductivity starts to increase at 850 nm, which is close to 1.446 eV, the activation energy of CdTe polycrystal films.