• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 1999.11a
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• pp.520-524
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• 1999

The Impact ionization rate is highly anisotropic at low electron energy, while it becomes isotropic at higher energy range in which impact ionization events frequently accur. In this study, full energy band structure obtained by pseudopotential method and Fermi's golden rule is used to calculate impact ionization rate. The calculated impact ionization rate is well fitted to a modified Keldysh formular at 300K and 77K. Full band Monte Carlo simulator is made to investigate the validity of the GaAs impact ionization coefficients at 300K and 77K. Impart ionization process is isotropic under the condition of steady state since anisotrophy appears during very short time at look. Impart ionization coefficients is nearly constant and is anisotropic in electric field applied along the <110> direction at 77K.

• Journal of Pharmaceutical Investigation
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• v.12 no.4
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• pp.126-131
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• 1982

A quantitative fluorometric method was developed to determine aspirin and salicylic acid in bulk aspirin and commercial aspirin tablets. The excitation maximum for aspirin was observed at 280 nm and the emission maximum was at 335nm. The lowest energy excitation band for salicylic acid was at 308nm and the fluorescence emission band was at 450nm. Excipients, binders, lubricants and impurities did not interfere. Excellent recoveries were obtained for aspirin and salicylic acid. Results obtained by the KP III procedure and the proposed method were compared.

• Transactions on Electrical and Electronic Materials
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• v.3 no.1
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• pp.23-29
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• 2002

The electronic properties of Carbon Nanotube(CNT) are currently the focus of considerable interest. In this paper, the electronic properties of finite length effect in CNT for the carbon nano-scale device is presented. To Calculate the electronic properties of CNT, Empirical potential method (the extended Brenner potential for C-Si-H) for carbon and Tight Binding molecular dynamic (TBMD) simulation are used. As a result of study, we have known that the value of the band gap decreases with increasing the length of the tube. The energy band gap of (6,6) armchair CNT have the ranges between 0.3 eV and 2.5 eV. Also, our results are in agreements with the result of the other computational techniques.

• Journal of the Korean Institute of Telematics and Electronics
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• v.24 no.3
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• pp.445-452
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• 1987

In this paper, a model for characteristics in the AlxGa1-xAs layer of MODFET's is presented. The characteristics of conduction band in the AlxGa1-xAs layer is analyzed with the Fermi-Dirac statistics. And using the conduction band energy which is calculated with the numerical calculation method (false-Positon method), the variations of the electric-field distribution, the ionized donor concentration, and the two-dimensional electron gas density with gate voltage are calculated, respectively. The channel formation process for the parasitic MESFET operation in the MOD structure is also analyzed, and the characteristics in the AlxGa1-xAs layer is analytically modeled. The throretical results describe well the general characteristics in the MOD structure.

• Transactions of the Korean Society of Mechanical Engineers
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• v.13 no.1
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• pp.20-28
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• 1989

SEA(Statistical Energy Analysis) method has been applied to predict the sound radiation power from vibrating machinery. In this study, sound radiation power was predicted from coupled structures by transmission of vibration, which composed of two plates welded into an L shape. The predicted sound radiation power is in agreement within 2 or 3 dB on octave band comparing with values obtained from direct measurements. Also, in order to prove the validity of this method in changes of sound radiation power associated with modifications to structures, rubber pad was stuck on a plate. The results agree approximately within 3 or 5 dB. And SEA method is valuable for the optimal design to reduce the noise. Additionally, this paper suggests that the logarithmic decrement method is valid as the one for finding the loss factor.

• 제어로봇시스템학회:학술대회논문집
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• 2003.10a
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• pp.1857-1861
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• 2003

This paper proposes a method for controlling energy distribution to 1 phase induction heating coil by using the Binary Rate Modulation (BRM) Technique. Such method provides proper frequency to the heating coil's requirement by control the frequency at the resonance point, that is, 64-kHZ frequency band. System design are classified to 2 parts. The first part determines main frequency , and the second part generates the frequency from the 8-bit BRM derived from IC no. PAL22V10 in order to control the frequency for Full-bridge connected inverter when supplying the energy required by the 1 phase induction heating coil. Therefore, efficiency of the energy supply can be increate.

• Proceedings of the KIEE Conference
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• 1989.11a
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• pp.131-135
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• 1989

Hot electron simulation of silicon using Monte Carlo method was carried out to investigate impact ionization characteristics near the drain of MOSFET's at 77 and 300K. We successfully characterized drift velocity and impact ionization at 77 and 300K employing a simplified energy band structure and phonon scattering mechanisms. Woods' soft energy threshold model was introduced to the Monte Carlo simulation of impact ionization, and good agreement with reported experimental results was resulted by employing threshold energy of 1.7 eV. It is suggested that the choice of the critical angle between specular reflection and diffusive scattering of surface roughness scattering may be important in determining the impact ionization charateristics of Monte Carlo simulation near the drain of MOSFET's.

• Journal of Sensor Science and Technology
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• v.23 no.2
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• pp.134-141
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• 2014

A stoichiometric mixture of evaporating materials for $BaIn_2Se_4$ epilayers was prepared from horizontal electric furnace. To obtain the single crystal thin films, $BaIn_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the epilayers was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $BaIn_2Se_4$ epilayers measured from Hall effect by van der Pauw method are $8.94{\times}10^{17}cm^{-3}$ and 343 $cm^2/vs$ at 293 K, respectively. The temperature dependence of the energy band gap of the $BaIn_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)$=2.6261 eV-$(4.9825{\times}10^{-3}eV/K)T^2/(T+558 K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $BaIn_2Se_4$ have been estimated to be 116 meV and 175.9 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $BaIn_2Se_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1-$, $B_1$-exciton for n = 1 and $C_{21}$-exciton peaks for n=21.

• 한국정보통신설비학회:학술대회논문집
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• 2008.08a
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• pp.116-120
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• 2008

The conventional channel selection method for a ZigBee communication network basically detects the energy values in all channels. In the ISM band, no license is required to use channels in this band, so there may exist various interference factors in this band. It is well known that WLAN is the major interference factor degrading the performance of ZigBee in the ISM band. In this paper, we propose an efficient channel selection algorithm which uses the pattern of WLAN channel uses as the a priori information. By using the proposed algorithm, we may save the time required to select channels for the ZigBee communications.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.225-225
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• 2011

The dielectric and optical properties of GaInZnO (GIZO), HfInZnO (HIZO) and InZnO (IZO) thin films on glass by RF magnetron sputtering method were investiged using reflection electron energy loss spectroscopy (REELS). The band gap was estimated from the onset values of REELS spectra. The band gaps of GIZO, HIZO and IZO thin films are 3.1 eV, 3.5 eV and 3.0 eV, respectively, Hf and Ga incorporated into IZO results in an increase in the energy band gap of IZO by 0.5 eV and 0.1 eV. The dielectric functions were determined by comparing the effective cross section determined from experimental REELS with a rigorous model calculation based on the dielectric response theory, using available software package, good agreement between the experimental and fitting results gives confidence in the accuracy of the determined dielectric function. The main peak of Energy Loss Function (ELF) obtained from IZO shows at 18.42 eV, which shifted to 19.43 eV and 18.15 eV for GIZO and HIZO respectively, because indicates the corporation of cation Ga and Hf in the composition. The optical properties represented by the dielectric function e, the refractive index n, the extinction coefficient k, and the transmission coefficient, T of HIZO and IZO thin films were determined from a quantitative analysis of REELS. The transmission coefficient was increased to 93% and decreased to 87% in the visible region with the incorporation of Hf and Ga in the IZO compound.