• 한국인쇄학회지
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• 제23권1호
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• pp.77-97
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• 2005

Organic light-emitting diodes(OLEDs) have received considerable attention since they were first reported by Tang. Novel organic fluorescent materials have been reported on synthesis and application of new organic light-emitting materials. Despite of much recent progress, fabrication of full-color OLEDs still remained to be done. Many method have been proposed to full-color OLEDs displays such as using separated red, green and blue emitters, stacking separate rad, green and blue emitter, using a white emitter with individually pattered color filters, microcavity structures and using a blue emitter with individually patterned fluorescent materials. The last method has much attention because of easy fabrication of OLEDs and low-priced fabrication. This paper reports the optical and electrical characteristics of OLEDs using novel molecules containing biphenyl structure. Optical properties of biphenyl derivatives doped with poly(9-vinyl carbazole)(PVK) are measured and found Forster energy transfer process in the blends. And devices were fabricated as ITO/PEDOT/PVK doped with biphenyl derivatives/$Alq_3$/Li:Al and I-V-L characteristics and EL efficiency of devices were examined.

• 한국진공학회지
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• 제21권2호
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• pp.113-119
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• 2012

탄소나노튜브는 1차원의 구조에 기인하는 우수한 물리적, 전기적 특성으로 인해 다양한 분야에 응용 가능한 물질로 각광받고 있다. 특히, 수직 정렬된 단일벽 탄소나노튜브의 합성은 향상된 특성들을 기대할 수 있으며 다양한 분야로 활용가능하다. 본 연구에서는 열 화학기상증착법을 이용하여 합성과정에서 촉매층의 두께, 아세틸렌 가스의 주입량, 합성온도의 변화가 탄소나 노튜브의 길이와 직경에 미치는 영향을 조사하였다. 또한 위와 같은 조건에서의 촉매의 구조변화에 초점을 두어 이러한 현상을 이해하고자 하였다. 이러한 결과를 바탕으로 합성조건을 최적화하여 수백 ${\mu}m$ 길이의 결정성이 우수한 수직 정렬된 단일벽 탄소나노튜브를 합성하였다.

• 한국항공우주학회지
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• 제40권11호
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• pp.1004-1009
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• 2012

탄소나노튜브는 우수한 전기적 특성과 전계를 집중시킬 수 있는 높은 종횡비 그리고 뛰어난 열적 안정성 때문에, 높은 전류밀도와 낮은 구동전압 그리고 긴 수명시간과 같은 우수한 전계 방출 특성을 구현할 수 있는 재료이다. 탄소나노튜브를 이용하여 전계방출원을 제작하기 위해서는 금속전극에 탄소나노튜브를 고정시켜야 한다. 이때 금속과 탄소나노튜브 사이의 접촉문제가 필수적인데, 본 실험에서는 그래핀을 계면으로 사용함으로써 본 문제를 해결하였다. 이러한 시도는 금속과 탄소나노튜브 사이에 우수한 전기적 열적 계면을 형성함으로써 기존 전계방출원보다 뛰어난 전계방출 성능을 얻을 수 있게 하였다. 본 연구를 통해 탄소나노튜브 전계방출원을 전자 추진원으로의 응용이 기대된다.

• International Journal of Aeronautical and Space Sciences
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• 제10권2호
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• pp.117-124
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• 2009

In the environment where various and complicated threat signals exist, RWR (Radar Warning Receiver), which can warn pilot of the existence of threats, has long been a necessary electronic warfare (EW) system to improve survivability of aircraft. The angle of arrival (AOA) information, the most reliable sorting parameter in the RWR, is measured by means of four-quadrant amplitude comparison direction finding (DF) technique. Each of four antennas (usually spiral antenna) of DF unit covers one of four quadrant zones, with 90 degrees apart with nearby antenna. According to the location of antenna installed in helicopter, RWR is subject to signal loss and interference by helicopter body and structures including tail bumper, rotor blade, and so on, causing a difficulty of detecting hostile emitters. In this paper, the performance degradation caused by signal interference by tail rotor blades has been estimated by measuring amplitude video signals into which RWR converts RF signals in case a part of antenna is screened by real tail rotor blade in anechoic chamber. The results show that corruption of pulse amplitude (PA) is main cause of DF error. We have proposed two algorithms for resolving the interference by tail rotor blades as below: First, expand the AOA group range for pulse grouping at the first signal analysis phase. Second, merge each of pulse trains with the other, that signal parameter except PRI and AOA is similar, after the first signal analysis phase. The presented method makes it possible to use RWR by reducing interference caused by blade screening in case antenna is screened by tail rotor blades.

• 제어로봇시스템학회논문지
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• 제16권12호
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• pp.1167-1175
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• 2010

This paper presents the use of the inertial measurement unit information and the infrared sector information for getting the position of an object. Travel distance is usually calculated from the double integration of the accelerometer output with respect to time; however, the accumulated errors due to the drift are inevitable. The orientation change of the accelerometer also causes error because the gravity is added to the measured acceleration. Unless three axis orientations are completely identified, the accelerometer alone does not provide correct acceleration for estimating the travel distance. We propose a way of minimizing the error due to the change of the orientation. In order to reduce the accumulated error, the infrared sector information is fused with the inertial measurement unit information. Infrared sector information has highly deterministic characteristics, different from RFID. By putting several infrared emitters on the ceiling, the floor is divided into many different sectors and each sector is set to have a unique identification. Infrared light based sector information tells the sector the object is in, but the size of the uncertainty is too large if only the sector information is used. This paper presents an algorithm which combines both the inertial measurement unit information and the sector information so that the size of the uncertainty becomes smaller. It also introduces a framework which can be used with other types of the artificial landmarks. The characteristics of the developed infrared light based sector and the proposed algorithm are verified from the experiments.

• JSTS:Journal of Semiconductor Technology and Science
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• 제2권2호
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• pp.93-101
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• 2002

We have proposed and fabricated two lateral type field emission diodes, poly-Si emitter by utilizing the local oxidation of silicon (LOCOS) and GaN emitter using metal organic chemical vapor deposition (MOCVD) process. The fabricated poly-Si diode exhibited excellent electrical characteristics such as a very low turn-on voltage of 2 V and a high emission current of $300{\;}\bu\textrm{A}/tip$ at the anode-to-cathode voltage of 25 V. These superior field emission characteristics was speculated as a result of strong surface modification inducing a quasi-negative electron affinity and the increase of emitting sites due to local sharp protrusions by an appropriate activation treatment. In respect, two kinds of procedures were proposed for the fabrication of the lateral type GaN emitter: a selective etching method with electron cyclotron resonance-reactive ion etching (ECR-RIE) or a simple selective growth by utilizing $Si_3N_4$ film as a masking layer. The fabricated device using the ECR-RIE exhibited electrical characteristics such as a turn-on voltage of 35 V for $7\bu\textrm{m}$ gap and an emission current of~580 nA/l0tips at anode-to-cathode voltage of 100 V. These new field emission characteristics of GaN tips are believed to be due to a low electron affinity as well as the shorter inter-electrode distance. Compared to lateral type GaN field emission diode using ECR-RIE, re-grown GaN emitters shows sharper shape tips and shorter inter-electrode distance.

• 전자공학회논문지A
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• 제32A권10호
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• pp.43-50
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• 1995

A laser diode(LD) structure consisting of a single 150$\AA$ $Al_{0.07}$Ga$_{0.93}$As quantum well active region operating at ${\lambda}$=809nm, cladded with an AlGaAs graded-index separate confinement heterostructure, has bes been grown by MOCVD. Temperature coefficient of wavelength is approximately 0.2nm $^{\circ}C$ for the diode. The active aperture consists of five emitters separated from each other by means of SiO$_{2}$ deposition and stripe formation, which creates insulating regions that channel the current to 100-$\mu$m-wide stripes placed on 450-$\mu$m centers. From a typical uncoated LD, the output power of 0.8W has been obtained at a 1$\mu$s, 1kHz pulsed current level of 2.0$\AA$, which results in about 64% external quantum efficiency. The threshold current density is 736A/cm$^{2}$ for the case of 500$\mu$m cavity length LD's. The measure of an internal quantum efficiency was 75.8% and the internal loss 4.83$cm^{-1}$ . Finally, 3.1W output power has been obtained at a 1$\mu$s, 1kHz pulsed current level of 9A from the 500$\mu$m-aperture LD array with 460-$\mu$m- cavity length.

• Bulletin of the Korean Chemical Society
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• 제32권9호
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• pp.3290-3294
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• 2011

The properties of monomeric and dimeric salen-aluminum complexes, [salen(3,5-$^tBu)_2$Al(OR)], R = $OC_6H_4-p-C_6H_6$ (H1) and R = [salen(3,5-$^tBu$)AlOPh]C$(CH_3)_2$ (H2) (salen = N,N'-bis-(salicylidene)-ethylenediamine) as host layer materials in red phosphorescent organic light-emitting diodes (PhOLEDs) were investigated. H1 and H2 exhibit high thermal stability with decomposition temperature of 330 and $370^{\circ}C$. DSC analyses showed that the complexes form amorphous glasses upon cooling of melt samples with glass transition temperatures of 112 and $172^{\circ}C$. The HOMO (ca. -5.2~-5.3 eV) and LUMO (ca. -2.3~-2.4 eV) levels with a triplet energy of ca. 1.92 eV suggest that H1 and H2 are suitable for a host material for red emitters. The PhOLED devices based on H1 and H2 doped with a red emitter, $Ir(btp)_2$(acac) (btp = bis(2-(2'-benzothienyl)-pyridinato-N,$C^3$; acac = acetylacetonate) were fabricated by vacuum-deposition and solution process, respectively. The device based on vacuum-deposited H1 host displays high device performances in terms of brightness, luminous and quantum efficiencies comparable to those of the device based on a CBP (4,4'-bis(Ncarbazolyl) biphenyl) host while the solution-processed device with H2 host shows poor performance.

• Journal of Radiation Protection and Research
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• 제41권2호
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• pp.155-159
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• 2016

Background: Nuclear reactors produce a great number of antielectron neutrinos mainly from beta-decay chains of fission products. Such neutrinos have energies mostly in MeV range. We are interested in neutrinos in a region of keV, since they may take part in special weak interactions. We calculate reactor antineutrino spectra especially in the low energy region. In this work we present neutrino spectrum from a typical pressurized water reactor (PWR) reactor core. Materials and Methods: To calculate neutrino spectra, we need information about all generated nuclides that emit neutrinos. They are mainly fission fragments, reaction products and trans-uranium nuclides that undergo negative beta decay. Information in relation to trans-uranium nuclide compositions and its evolution in time (burn-up process) were provided by a reactor code MVP-BURN. We used typical PWR parameter input for MVP-BURN code and assumed the reactor to be operated continuously for 1 year (12 months) in a steady thermal power (3.4 GWth). The PWR has three fuel compositions of 2.0, 3.5 and 4.1 wt% $^{235}U$ contents. For preliminary calculation we adopted a standard burn-up chain model provided by MVP-BURN. The chain model treated 21 heavy nuclides and 50 fission products. The MVB-BURN code utilized JENDL 3.3 as nuclear data library. Results and Discussion: We confirm that the antielectron neutrino flux in the low energy region increases with burn-up of nuclear fuel. The antielectron-neutrino spectrum in low energy region is influenced by beta emitter nuclides with low Q value in beta decay (e.g. $^{241}Pu$) which is influenced by burp-up level: Low energy antielectron-neutrino spectra or emission rates increase when beta emitters with low Q value in beta decay accumulate Conclusion: Our result shows the flux of low energy reactor neutrinos increases with burn-up of nuclear fuel.

• 신재생에너지
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• 제9권2호
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• pp.23-29
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• 2013

Furnace and laser is currently the most important doping process. However furnace is typically difficult appling for selective emitters. Laser requires an expensive equipment and induces a structural damage due to high temperature using laser. This study has developed a new atmospheric pressure plasma source and research atmospheric pressure plasma doping. Atmospheric pressure plasma source injected Ar gas is applied a low frequency (a few 10 kHz) and discharged the plasma. We used P type silicon wafers of solar cell. We set the doping parameter that plasma treatment time was 6s and 30s, and the current of making the plasma is 70 mA and 120 mA. As result of experiment, prolonged plasma process time and highly plasma current occur deeper doping depth and improve sheet resistance. We investigated doping profile of phosphorus paste by SIMS (Secondary Ion Mass Spectroscopy) and obtained the sheet resistance using generally formula. Additionally, grasped the wafer surface image with SEM (Scanning Electron Microscopy) to investigate surface damage of doped wafer. Therefore we confirm the possibility making the selective emitter of solar cell applied atmospheric pressure plasma doping with phosphorus paste.